2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP415-C Photo Transistor Chip Features • • • • • Light Activated Photo Transistor Chip Planar NPN Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy Electrical Characteristics @ 25oC SYMB OL CHARACT ERIST IC CONDIT IONS MIN T YP MAX UNIT S BVCEO Collector-Emitter Voltage IC = 100 µA 30 Volts BVEBO Emitter-Base Voltage IE = 100 µA 4 Volts BVCBO Collector-Base Voltage IC = 100 µA 40 Volts Collector-Emitter Saturation IC = 1.0 mA, IB = 40 µA ID Collector Current VCE = 10 Volts hFE Beta VCE = 5 Volts, IB = 4 µA VCESAT Data Sheet # MSC1342.PDF Updated:October 1998 350 mVolts 90 nAmps 2,000 O p t o Pro d u c t s