ISSI IS49FL004T 4 mbit 3.3 volt-only firmware hub/lpc flash memory Datasheet

IS49FL004T
4 Mbit 3.3 Volt-only Firmware Hub/LPC Flash Memory
SEPTEMBER 2013
FEATURES
• Single Power Supply Operation
- Low voltage range: 3.0 V - 3.6 V
• Firmware HUB (FWH)/Low Pin Count (LPC)
- IS49FL004: One hundred and twenty-eight
uniform 4 Kbyte sectors, or eight uniform 64
Kbyte blocks (sector group)
Mode
- 33 MHz synchronous operation with PCI bus
- 5-signal communication interface for in-system
read and write operations
- Standard SDP Command Set
- Data# Polling and Toggle Bit features
- Register-based read and write protection for
each block (FWH mode only)
- 4 ID pins for multiple Flash chips selection
(FWH mode only)
- 5 GPI pins for General Purpose Input Register
- TBL# pin for hardware write protection to Boot
Block
- WP# pin for hardware write protection to whole
memory array except Boot Block
• Top Boot Block
• Address/Address Multiplexed (A/A Mux)
- IS49FL004: 64 Kbyte top Boot Block
Mode
- 11-pin multiplexed address and 8-pin data I/O
interface
- Supports fast programming on EPROM
programmers
• Standard Intel Firmware Hub/LPC Interface
- Read compatible to Intel® 82802 Firmware Hub
devices
- Conforms to Intel LPC Interface Specification
Revision 1.1
• Memory Configuration
- IS49FL004: 512K x 8 (4 Mbit)
• Cost Effective Sector/Block Architecture
• Automatic Erase and Program Operation
- Build-in automatic program verification for
extended product endurance
- Typical 25 µs/byte programming time
- Typical 50 ms sector/block/chip erase time
- Standard SDP Command Set
- Data# Polling and Toggle Bit features
• Two Configurable Interfaces
- In-System hardware interface: Auto detection of
Firmware Hub (FWH) or Low Pin Count (LPC)
memory cycle for in-system read and write
operations
- Address/Address-Multiplexed (A/A Mux)
interface for programming on EPROM Programmers during manufacturing
• Lower Power Consumption
- Typical 2 mA active read current
- Typical 7 mA program/erase current
• High Product Endurance
- Guarantee 100,000 program/erase cycles per
single sector (preliminary)
- Minimum 20 years data retention
• Compatible Pin-out and Packaging
- 32-pin (8 mm x 14 mm) VSOP
- 32-pin PLCC
• Hardware Data Protection
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
1
IS49FL004T
GENERAL DESCRIPTION
The IS49FL004 is 4 Mbit 3.3 Volt-only Flash Memories used as BIOS in PCs and Notebooks. These devices are
designed to use a single low voltage, ranging from 3.0 Volt to 3.6 Volt, power supply to perform insystem or off-system read, erase and program operations. The 12.0 Volt VPP power supply are not required for the
program and erase operations of devices. The devices conform to Intel® Low Pin Count (LPC) Interface specification
revision 1.1 and also read-compatible with Intel 82802 Firmware Hub (FWH) for most PC and Notebook applications.
The IS49FL004 support two configurable interfaces: In-system hardware interface which can automatic de- tect
the FWH or LPC memory cycle for in-system read and write operations, and Address/Address Multiplexed (A/ A
Mux) interface for fast manufacturing on EPROM Programmers. These devices are designed to work with both
Intel Family chipset and Non-Intel Family Chipset platforms, it will provide PC and Notebook manufacturers great
flexibility and simplicity for design, procurement, and material inventory.
The memory array of IS49FL004 is divided into uniform 4 Kbyte sectors, or uniform 64 Kbyte blocks (sector group consists of sixteen adjecent sectors). The sector or block erase feature allows users to flexibly erase a memory
area as small as 4 Kbyte or as large as 64 Kbyte by one single erase operation without affecting the data in
others. The chip erase feature allows the whole memory to be erased in one single erase operation. The devices
can be programmed on a byte-by-byte basis after performing the erase opera- tion.
The program operation of IS49FL004 is executed by issuing the program command code into command
register. The internal control logic automatically handles the programming voltage ramp-up and timing. The erase
operation of the devices is executed by issuing the sector, block, or chip erase command code into command
register. The internal control logic automatically handles the erase voltage ramp-up and timing. The
preprogramming on the array which has not been programmed is not required before an erase operation. The
devices offer Data# Polling and Toggle Bit functions in FWH/LPC and A/A Mux modes, the progress or
completion of program and erase operations can be detected by reading the Data# Polling on I/O7 or Toggle Bit
on I/O6.
The IS49FL004 has a 64 Kbyte top boot block. The boot block can be write protected by a hardware method
controlled by the TBL# pin or a register-based protection turned on/off by the Block Locking Registers (FWH mode
only). The rest of blocks except boot block in the devices also can be write protected by WP# pin or Block Locking
Registers (FWH mode only).
The IS49FL004 are manufactured on pFLASH™’s advanced nonvolatile technology. The devices are offered in
32-pin VSOP and PLCC packages with optional environmental friendly Halogen-free package.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
2
IS49FL004T
GPI0
A6
WP#
WP#
A5
32
31
30
GPI4
VCC
VCC
NC
GPI3
GPI2
GPI4
1
CLK
2
NC
3
GPI3
4
GPI2
A10
GPI0
R/C# CLK
5
VCC
A7
NC
A/A Mux
GPI1
RST# RST# RST#
FWH
A9
LPC
GPI1
A8
A/A Mux LPC
FWH
CONNECTION DIAGRAMS
A/A Mux
LPC
FWH
29
IC
IC
IC
6
28
GND
GND
GND
7
27
NC
NC
NC
A4
8
26
NC
NC
RES
A3
9
25
VCC
VCC
VCC
ID2
RES
A2
10
24
OE#
INIT#
INIT#
ID1
RES
A1
11
23
WE#
ID0
RES
A0
12
22
NC
NC
NC
FWH0
LAD0
I/O0
13
21
I/O7
RES
RES
I/O4
I/O5
I/O6
RES
RES
RES
RES
RES
RES
20
LAD3
19
FWH3
18
GND
LAD2
FWH2
17
GND
I/O1
16
GND
A/A Mux
LPC
LAD1
FWH
15
FWH1
14
I/O3
TBL#
ID3
I/O2
TBL#
NC
LFRAME# FWH4
32-PIN PLCC
FWH
NC
NC
NC
GND
IC
GPI4
CLK
VCC
NC
RST#
GPI3
GPI2
GPI1
GPI0
WP#
TBL#
LPC
NC
NC
NC
GND
IC
GPI4
CLK
VCC
NC
RST#
GPI3
GPI2
GPI1
GPI0
WP#
TBL#
A/A Mux
NC
NC
NC
GND
IC
A10
R/C#
VCC
NC
RST#
A9
A8
A7
A6
A5
A4
A/A Mux
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE#
WE#
NC
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
LPC
INIT#
LFRAME#
NC
RES
RES
RES
RES
LAD3
GND
LAD2
LAD1
LAD0
RES
RES
RES
RES
FWH
INIT#
FWH4
NC
RES
RES
RES
RES
FWH3
GND
FWH2
FWH1
FWH0
ID0
ID1
ID2
ID3
32-PIN (8mm x 14mm) VSOP
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
3
IS49FL004T
PIN DESCRIPTIONS
In te rfa c e
S YM B O L
T YP E
D E S C R IP T IO N
PP
FW H
LPC
A [1 0 :0 ]
I
X
A d d re s s Inp uts : F o r i np uti ng the m ulti p le x a d d re s s e s a nd c o m m a nd s i n
P P m o d e . R o w a nd c o lum n a d d re s s e s a re la tc he d d uri ng a re a d o r
w ri te c yc le c o ntro lle d b y R /C # p i n.
R /C #
I
X
R o w /C o lum n S e le c t: To i nd i c a te the ro w o r c o lum n a d d re s s i n P P
m o d e . W he n thi s p i n g o e s lo w, the ro w a d d re s s i s la tc he d . W he n thi s
p i n g o e s hi g h, the c o lum n a d d re s s i s la tc he d .
I/O
X
D a ta Inp uts /O utp uts : U s e d fo r A /A M ux m o d e o nly, to i np ut
c o m m a nd /d a ta d uri ng w ri te o p e ra ti o n a nd to o utp ut d a ta d uri ng re a d
o p e ra ti o n. T he d a ta p i ns flo a t to tri -s ta te w he n O E # i s d i s a b le d .
WE#
I
X
W ri te E na b le : A c ti va te the d e vi c e fo r w ri te o p e ra ti o n. W E # i s a c ti ve lo w.
OE #
I
X
O utp ut E na b le : C o ntro l the d e vi c e 's o utp ut b uffe rs d uri ng a re a d c yc le .
O E # i s a c ti ve lo w.
I/O [7 :0 ]
IC
I
X
X
X
Inte rfa c e C o nfi g ura ti o n S e le c t: T hi s p i n d e te rm i ne s w hi c h m o d e i s
s e le c te d . W he n p ulls hi g h, the d e vi c e e nte rs i nto A /A M ux m o d e . W he n
p ulls lo w, F W H /L P C m o d e i s s e le c te d . T hi s p i n m us t b e s e tup d uri ng
p o w e r-up o r s ys te m re s e t, a nd s ta ys no c ha ng e d uri ng o p e ra ti o n. Thi s
p i n i s i nte rna lly p ulle d d o w n w i th a re s i s to r b e tw e e n 2 0 -1 0 0 K
RS T#
I
X
X
X
R e s e t: To re s e t the o p e ra ti o n o f the d e vi c e a nd re turn to s ta nd b y m o d e .
IN IT #
I
X
X
Ini ti a li ze : Thi s i s a s e c o nd re s e t p i n fo r i n-s ys te m us e . IN IT # o r R S T # p i n
p ulls lo w w i ll i ni ti a te a d e vi c e re s e t.
G P I[4 :0 ]
I
X
X
F W H /L P C G e ne ra l P urp o s e Inp uts : U s e d to s e t the G P I_ R E G fo r
s ys te m d e s i g n p urp o s e o nly. T he va lue o f G P I_ R E G c a n b e re a d
thro ug h F W H i nte rfa c e . The s e p i ns s ho uld b e s e t a t d e s i re d s ta te
b e fo re the s ta rt o f the P C I c lo c k c yc le fo r re a d o p e ra ti o n a nd s ho uld
re m a i n no c ha ng e unti l the e nd o f the re a d c yc le . U nus e d G P I p i ns m us t
no t b e flo a te d .
TB L #
I
X
X
To p B lo c k L o c k : W he n p ulls lo w, i t e na b le s the ha rd w a re w ri te p ro te c ti o n
fo r to p b o o t b lo c k . W he n p ulls hi g h, i t d i s a b le s the ha rd w a re w ri te
p ro te c ti o n.
WP#
I
X
X
W ri te P ro te c t: W he n p ulls lo w, i t e na b le s the ha rd w a re w ri te p ro te c ti o n
to the m e m o ry a rra y e xc e p t the to p b o o t b lo c k . W he n p ulls hi g h, i t
d i s a b le s ha rd w a re w ri te p ro te c ti o n.
I/O
X
F W H A d d re s s a nd D a ta : T he m a jo r I/O p i ns fo r tra ns m i tti ng d a ta ,
a d d re s s e s a nd c o m m a nd c o d e i n F W H m o d e .
I
X
F W H Inp ut: To i nd i c a te the s ta rt o f a F W H m e m o ry c yc le o p e ra ti o n.
A ls o us e d to a b o rt a F H W m e m o ry c yc le i n p ro g re s s .
F W H [3 :0 ]
FW H4
I/O
X
L P C A d d re s s a nd D a ta : T he m a jo r I/O p i ns fo r tra ns m i tti ng d a ta ,
a d d re s s e s a nd c o m m a nd c o d e i n L P C m o d e .
L F RA M E #
I
X
L P C F ra m e : To i nd i c a te the s ta rt o f a L P C m e m o ry c yc le o p e ra ti o n.
A ls o us e d to a b o rt a L P C m e m o ry c yc le i n p ro g re s s .
CLK
I
X
F W H /L P C C lo c k : To p ro vi d e a s ync hro no us c lo c k fo r F W H a nd L P C
m o d e o p e ra ti o ns .
L A D [3 :0 ]
ID [3 :0 ]
X
I
Id e nti fi c a ti o n Inp uts : T he s e fo ur p i ns a re p a rt o f the m e c ha ni s m tha t
a llo w s m ulti p le F W H d e vi c e s to b e a tta c he d to the s a m e b us . The
s tra p p i ng o f the s e p i ns i s us e d to i d e nti fy the c o m p o ne nt. T he b o o t
d e vi c e m us t ha ve ID [3 :0 ] = 0 0 0 0 b a nd i t i s re c o m m e nd e d tha t a ll
s ub s e q ue nt d e vi c e s s ho uld us e s e q ue nti a l up -c o unt s tra p p i ng . The s e
p i ns a re i nte rna lly p ulle d -d o w n w i th a re s i s to r b e tw e e n 2 0 -1 0 0 K
X
V CC
X
X
X
D e vi c e P o w e r S up p ly
GN D
X
X
X
G ro und
NC
X
X
X
N o C o nne c ti o n
X
X
R e s e rve d : R e s e rve d func ti o n p i ns fo r future us e .
RE S
Note: I = Input, O = Output
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
4
IS49FL004T
BLOCK DIAGRAM
ERASE/PROGRAM
VOLTAGE
GENERATOR
TBL#
W P#
INIT#
FWH[3:0] or
LAD[3:0]
FWH4 or LFRAME#
CLK
GPI[4:0]
I/O B U F FE R S
FWH/LPC
MODE
INTERFACE
HI GH V O L T A G E
SWITCH
A[10:0]
I/O[7:0]
WE#
PP MODE
INTERFACE
CONTROL
LOGIC
OE #
R/C#
DATA
LATCH
SENSE
AMP
IC
ADDRESS
LATCH
RST#
Y -G A T I N G
Y-DECODER
X-DECODER
MEMORY
ARRAY
DEVICE OPERATION
MODE SELECTION
PRODUCT IDENTIFICATION
The IS49FL004 can operate in two configurable
interfaces: The In-System Hardware interface and Address/Address Multiplexed (A/A Mux) interface controlled by IC pin. If the IC pin is set to logic high (VIH),
the devices enter into A/A Mux interface mode. If the IC
pin is set logic low (VIL), the devices will be in in-system
hardware interface mode. During the in-system hardware interface mode, the devices can automatically detect the Firmware Hub (FWH) or Low Pin Count (LPC)
memory cycle sent from host system and response to
the command accordingly. The IC pin must be setup
during power-up or system reset, and stays no change
during device operation.
The product identification mode can be used to read the
Manufacturer ID and the Device ID by a software Product ID Entry command in both in-system hardware interface and A/A Mux interface modes. The product
indentification mode is activated by three-bus-cycle command. Refer to Table 1 for the Manufacturer ID and Device ID of IS49FL00x and Table 14 for the SDP Command Definition.
When working in-system, typically on a PC or Notebook,
the IS49FL004 are connected to the host system
through a 5-pin communication interface operated based
on a 33-MHz synchronous clock. The 5-pin interface is
defined as FWH[3:0] and FWH4 pins under FWH mode
or as LAD[3:0] and LFRAME# pins under LPC mode for
easy understanding as to those existing compatible products. When working off-system, typically on a EPROM
Programmer, the devices are operated through 11-pin
multiplexed address - A[10:0] and 8-pin data I/O - I/O[7:
0] interfaces. The memory addresses of devices are input through two bus cycles as row and column addresses
controlled by a R/C# pin.
Table 1: Product Identification
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
In FWH mode, the product identification can also be
read directly at FFBC0000h for Manufacturer ID - “9Dh”
and FFBC0001h for Device ID in the 4 GByte system
memory map.
Description
Manufacturer ID
Device ID
IS49FL004
4Mb
Address
Data
00000h
00002h
9Dh
7Fh
00001h
6Eh
5
IS49FL004T
DEVICE OPERATION (CONTINUED)
The IS49FL004 provide three levels of data protec- tion
for the critical BIOS code of PC and Notebook. It
includes memory hardware write protection, hardware
data protection and software data protection.
MEMORY HARDWARE WRITE PROTECTION
The IS49FL004 has a 64 Kbyte top boot block. When
work- ing in-system, the memory hardware write
protection fea- ture can be activated by two control
pins - Top Block Lock (TBL#) and Write Protection
(WP#) for both FWH and LPC modes. When TBL# is
pulled low (V ), the boot block is hardware
write
IL
protected. A sector erase, block erase, or byte
program command attempts to erase or program the
boot block will be ignored. When WP# is pulled low
(V ), the Block
0 ~ Block 6 of IS49FL004 (except the
IL
boot block) are hardware write protected. Any attempt to
erase or program a sector or block within this area
will be ignored.
SOFTWARE DATA PROTECTION
The devices feature a software data protection function
to protect the device from an unintentional erase or program operation. It is performed by JEDEC standard Software Data Protection (SDP) command sequences. See
Table 14 for SDP Command Definition. A program operation is initiated by three memory write cycles of unlock command sequence. A chip (only available in A/A
Mux mode), sector or block erase operation is initiated
by six memory write cycles of unlock command
sequence. During SDP command sequence, any invalid
command or sequence will abort the operation and force
the device back to standby mode.
BYTE PROGRAMMING
In program operation, the data is programmed into the
devices (to a logical “0”) on a byte-by-byte basis. In FWH
and LPC modes, a program operation is activated by
writing the three-byte command sequence and program
address/data through four consecutive memory write
Both TBL# and WP# pins must be set low (VIL) for pro- cycles. In A/A Mux mode, a program operation is actitection or high (VIH) for un-protection prior to a program vated by writing the three-byte command sequence and
or erase operation. A logic level change on TBL# or WP# program address/data through four consecutive bus
pin during a program or erase operation may cause un- cycles. The row address (A10 - A0) is latched on the
falling edge of R/C# and the column address (A21 - A11)
predictable results.
is latched on the rising edge of R/C#. The data is latched
The TBL# and WP# pins work in combination with the on the rising edge of WE#. Once the program operation
block locking registers. When active, these pins write is started, the internal control logic automatically handles
protect the appropriate blocks regardless of the associ- the internal programming voltages and timing.
ated block locking registers setting.
A data “0” can not be programmed back to a “1”. Only
erase operation can convert “0”s to “1”s. The Data# PollHARDWARE DATA PROTECTION
ing on I/O7 or Toggle Bit on I/O6 can be used to detect
Hardware data protection protects the devices from un- when the programming operation is completed in FWH,
intentional erase or program operation. It is performed LPC, and A/A Mux modes.
by the devices automatically in the following three ways:
(a) VCC Detection: if VCC is below 1.8 V (typical), the CHIP ERASE
The entire memory array can be erased by chip erase
program and erase functions are inhibited.
(b) Write Inhibit Mode: holding any of the signal OE# operation available under the A/A Mux mode operated
low, or WE# high inhibits a write cycle (A/A Mux mode by EPROM Programmer only. Pre-programs the device
is not required prior to the chip erase operation. Chip
only).
(c) Noise/Glitch Protection: pulses of less than 5 ns (typi- erase starts immediately after a six-bus-cycle chip erase
cal) on the WE# input will not initiate a write cycle (A/A command sequence. All commands will be ignored once
the chip erase operation has started. The Data# Polling
Mux mode only).
on I/O7 or Toggle Bit on I/O6 can be used to detect the
progress or completion of erase operation. The devices
will return back to standy mode after the completion of
chip erase.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
6
IS49FL004T
DEVICE OPERATION (CONTINUED)
SECTOR AND BLOCK ERASE
I/O6 TOGGLE BIT
The IS49FL004 con- tains one hundred and twenty-eight
uniform 4 Kbyte sec- tors, or eight uniform 64 Kbyte
blocks (sector group - consists of sixteen adjecent
sectors). A sector erase command is used to erase an
individual sector. A block erase command is used to
erase an individual block. See Table 12 - 13 for
Sector/Block Address Tables.
The IS49FL004 also provide a Toggle Bit feature to
detect the progress or the completion of a program or
erase operation. During a program or erase operation,
an attempt to read data from the devices will result in I/
O6 toggling between “1” and “0”. When the program or
erase operation is complete, I/O6 will stop toggling and
valid data will be read. Toggle bit may be accessed at
any time during a program or erase operation.
In FWH/LPC mode, an erase operation is activated by
writing the six-byte command sequence through six consecutive write memory cycles. In A/A Mux mode, an
erase operation is activated by writing the six-byte command in six consecutive bus cycles. Pre-programs the
sector or block is not required prior to an erase operation.
RESET
Any read, program, or erase operation to the devices
can be reset by the INIT# or RST# pins. INIT# and RST#
pins are internally hard-wired and have same function to
the devices. The INIT# pin is only available in FWH and
LPC modes. The RST# pin is available in all modes. It
I/O7 DATA# POLLING
is required to drive INIT# or RST# pins low during sysThe devices provide a Data# Polling feature to indicate tem reset to ensure proper initialization.
the progress or the completion of a program or erase
operation in all modes. During a program operation, an During a memory read operation, pulls low the INIT# or
attempt to read the device will result in the complement RST# pin will reset the devices back to standby mode
of the last loaded data on I/O7. Once the program cycle and then the FWH[3:0] of FWH interface or the LAD[3:
is complete, the true data of the last loaded data is valid 0] of LPC interface will go to high impedance state.
on all outputs. During an erase operation, an attempt to During a program or erase operation, pulls low the INIT#
read the device will result a “0” on I/O7. After the erase or RST# pin will abort the program or erase operation
cycle is complete, an attempt to read the device will and reset the devices back to standby mode. A reset
latency will occur before the devices resume to standby
result a “1” on I/O7.
mode when such reset is performed. When a program
or erase operation is reset before the completion of such
operation, the memory contents of devices may become invalid due to an incomplete program or erase
operation.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
7
IS49FL004T
FWH MODE OPERATION
FWH MODE MEMORY READ/WRITE OPERATION
FWH ABORT OPERATION
In FWH mode, the IS49FL004 are connected
through a 5-pin communication interface - FWH[3:0] and
FWH4 pins to work with Intel® Family of I/O Controller
Hubs (ICH) chipset platforms. The FWH mode also support JEDEC standard Software Data Protection (SDP)
product ID entry, byte program, sector erase, and block
erase command sequences. The chip erase command
sequence is only available in A/A Mux mode.
The FWH4 signal indicates the start of a memory cycle
or the termination of a cycle in FWH mode. Asserting
FWH4 for one or more clock cycle with a valid START
value on FWH[3:0] will initiate a memory read or memory
write cycle. If the FWH4 is driven low again for one or
more clock cycles during this cycle, this cycle will be
terminated and the device will wait for the ABORT command “1111b” to release the FWH[3:0] bus. If the abort
occurs during the program or erase operation such as
The addresses and data are transmitted through the 4- checking the operation status with Data# Polling (I/O7)
bit FWH[3:0] bus synchronized with the input clock on or Toggle Bit (I/O6) pins, the read status cycle will be
CLK pin during a FWH memory cycle operation. The aborted but the internal program or erase operation will
address or data on FWH[3:0] bus is latched on the ris- not be affected. Only the reset operation initiated by RST#
ing edge of the clock. The pulse of FWH4 pin inserted or INIT# pin can terminate the program or erase operation.
for one clock indicates the start of a FWH memory read
or memory write cycle.
Once the FWH memory cycle is started, asserted by
FWH4, a START value “11xxb” is expected by
IS49FL004 as a valid command cycle and is used to
indicates the type of memory cycle (“1101b” for FWH
memory read cycle or “1110b” for FWH memory write
cycle). Addresses and data are transferred to and from
the device decided by a series of “fields”. Field sequences
and contents are strictly defined for FWH memory read
and write operations. Refer to Table 2 and 3 for FWH
Memory Read Cycle Definition and FWH Memory Write
Cycle Definition.
There are 7 clock fields in a FWH memory cycle that
gives a 28 bit memory address A27 - A0 through FWH
[3:0] pins, but only the last five address fields will be
decoded by the FWH devices. The IS49FL004 decodes
A18 - A0 with A19 ignored. The address A22 has the
special function of directing reads and writes to the
Flash array when A22 = 1 or to the register space
with A22 = 0. The A27 - A23 and A21 - A20 are don’t
care for the devices under FWH mode.
The IS49FL004 are mapped within the top 4 Mbyte
address range devoted to the FWH devices in the 4 Gbyte
system memory space. Please see Table 11 for System
Memory Map.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
8
IS49FL004T
FWH MODE OPERATION (CONTINUED)
Table 2: FWH Memory Read Cycle Definition
Clock Cycle
Field
FWH[3:0]
1
START
1101
IDSEL
0000 to
1111
2
Direction Description
IN
Start of Cycle: "1101b" to indicate the start of a memory
read cycle.
IN
ID Select Cycle: Indicates which FWH device should respond.
If the IDSEL field matches the value set on ID[3:0] pins, then
the particular FWH device will respond to subsequent
commands.
3-9
IMADDR
YYYY
IN
Address Cycles: This is the 28-bit memory address. The
addresses transfer most-significant nibble first and leastsignificant nibble last. (i.e., A27 - 24 on FWH[3:0] first, and
A3 - A0 on FWH[3:0] last).
10
IMSIZE
0000
IN
Memory Size Cycle: Indicates how many bytes will be or
transferred during multi-byte operations. The IS49FL00x only
support "0000b" for one byte operation.
11
TAR0
1111
IN then
Float
12
TAR1
1111
(float)
13
RSYNC
0000
(READY)
OUT
Ready Sync: The FWH device indicates the least-significant
nibble of data byte will be ready in next clock cycle.
14-15
DATA
YYYY
OUT
Data Cycles: The 8-bits data transferred with least-significant
nibble first and most-significant nibble last. (i.e., I/O3 - I/O0 on
LAD[3:0] first, then I/O7 - I/O4 on FWH[3:0] last).
16
TAR0
1111
OUT then
Float
17
TAR1
1111
(float)
Float then Turn-Around Cycle 1: The Intel ICH resumes control of the bus
during this cycle.
IN
Turn-Around Cycle 0: The Intel ICH has driven the bus then
float it to all "1"s and then floats the bus.
Float then Turn-Around Cycle 1: The device takes control of the bus
during this cycle.
OUT
Turn -Around Cycle 0: The FWH device has driven the bus
then float it to all "1"s and then floats the bus.
FWH MEMORY READ CYCLE WAVEFORMS
CLK
RST# or INIT#
FWH4
Memor y
Read
Start
FWH[3:0]
1101b
1 Clock
IDSEL
ID[3:0]
IMSIZE
Address
xxxxb
x1xxb
1 Clock
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
A[19:16] A[15:12]
A[11:8]
Load Address in 7 Clocks
From Host to Device
A[7:4]
A[3:0]
0000b
TAR
1111b
Tri-State
2 Clocks
RSYN C
0000b
1 Clock
Data
D[3:0]
D[7:4]
TAR
1111b
Next Start
1101b
Tri-State
Data Out 2 Clocks
2 Clocks
From Device to Host
1 Clock
9
IS49FL004T
FWH MODE OPERATION (CONTINUED)
Table 3: FWH Memory Write Cycle Definition
Clock Cycle
Field
FWH[3:0]
1
START
1110
IDSEL
0000 to
1111
2
Direction Description
IN
Start of Cycle: "1110b" to indicate the start of a memory
write cycle.
IN
ID Select Cycle: Indicates which FWH device should respond.
If the IDSEL field matches the value set on ID[3:0] pins, then
the particular FWH device will respond to subsequent
commands.
3-9
IMADDR
YYYY
IN
Address Cycles: This is the 28-bit memory address. The
addresses transfer most-significant nibble first and leastsignificant nibble last. (i.e., A27 - 24 on FWH[3:0] first, and
A3 - A0 on FWH[3:0] last).
10
IMSIZE
0000
IN
Memory Size Cycle: Indicates how many bytes will be or
transferred during multi-byte operations. The IS49FL00x only
support "0000b" for one byte operation.
11-12
DATA
YYYY
IN
Data Cycles: The 8-bits data transferred with least-significant
nibble first and most-significant nibble last. (i.e., I/O3 - I/O0 on
LAD[3:0] first, then I/O7 - I/O4 on FWH[3:0] last).
13
TAR0
1111
IN then
Float
14
TAR1
1111
(float)
15
RSYNC
0000
(READY)
OUT
16
TAR0
1111
OUT then
Float
17
TAR1
1111
(float)
Float then Turn-Around Cycle 1: The Intel ICH resumes control of the bus
during this cycle.
IN
Turn-Around Cycle 0: The Intel ICH has driven the bus then
float it to all "1"s and then floats the bus.
Float then Turn-Around Cycle 1: The device takes control of the bus
during this cycle.
OUT
Ready Sync: The FWH device indicates that it has received
the data or command.
Turn-Around Cycle 0: The FWH device has driven the bus
then float it to all "1"s and then floats the bus.
FWH MEMORY WRITE CYCLE WAVEFORMS
CLK
RST# or INIT#
FWH4
Memor y
Write
Start
FWH[3:0]
1110b
1 Clock
IDSEL
ID[3:0]
Address
xxxxb
x1xxb
1 Clock
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
A[19:16] A[15:12]
IMSIZE
A[11:8]
A[7:4]
Load Address in 7 Clocks
From Host to Device
A[3:0]
0000b
Data
D[3:0]
TAR
D[7:4]
1 Clock Load Data in 2 Clocks
1111b
Tri-State
2 Clocks
RSYN C
0000b
Next Start
TAR
1111b
Tri-State
1 Clock
2 Clocks
From Device to Host
1110b
1 Clock
10
IS49FL004T
FWH MODE OPERATION (CONTINUED)
FWH BYTE PROGRAM WAVEFORMS
CLK
RST# or INIT#
FWH4
Memor y
Write
Cycle
FWH[3:0]
1110b
1 Clock
Address
IDSEL
ID[3:0]
xxxxb
x1xxb
1 Clock
xxxxb
0101b
Data
IMSIZE
0101b
0101b
0101b
Load "5555h" in 7 Clocks
0000b
1010b
TAR
1010b
1 Clock Load "AAh" in 2 Clocks
1111b
Tri-State
2 Clocks
RSYN C
0000b
1 Clock
Host to Device
TAR
1111b
Tri-State
2 Clocks
Device to Host
CLK
RST# or INIT#
FWH4
FWH[3:0]
2nd Start
IDSEL
1110b
ID[3:0]
1 Clock
IMSIZE
Address
xxxxb
x1xxb
1 Clock
xxxxb
0010b
1010b
1010b
1010b
Load "2AAAh" in 7 Clocks
0000b
Data
0101b
TAR
0101b
1 Clock Load "55h" in 2 Clocks
1111b
Tri-State
2 Clocks
RSYN C
1 Clock
Host to Device
TAR
1111b
0000b
Tri-State
2 Clocks
Device to Host
CLK
RST# or INIT#
FWH4
FWH[3:0]
3rd Start
IDSEL
1110b
ID[3:0]
1 Clock
1 Clock
IMSIZE
Address
xxxxb
x1xxb
xxxxb
0101b
0101b
0101b
0101b
Load "5555h" in 7 Clocks
0000b
Data
0000b
TAR
1010b
1 Clock Load "A0h" in 2 Clocks
1111b
Tri-State
2 Clocks
RSYN C
0000b
1 Clock
Host to Device
TAR
1111b
Tri-State
2 Clocks
Device to Host
CLK
RST# or INIT#
FWH4
FWH[3:0]
4th Start
IDSEL
1110b
ID[3:0]
1 Clock
1 Clock
IMSIZE
Address
xxxxb
x1xxb
A[19:16] A[15:12]
A[11:8]
A[7:4]
Load Address in 7 Clocks
0000b
Data
D[3:0]
TAR
D[7:4]
1 Clock Load Data in 2 Clocks
Host to Device
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
A[3:1]
1111b
Tri-State
2 Clocks
RSYN C
0000b
1 Clock
TAR
1111b
Tri-State
2 Clocks
Device to Host
11
IS49FL004T
FWH SECTOR ERASE WAVEFORMS
CLK
RST # or INIT#
FWH4
Memory
Write Cycle IDSE L
F W H [ 3: 0 ]
1110b
1 Clock
ID[3:0]
Address
xxxxb
x1xxb
1 Clock
xxxxb
0101b
IMSIZE
0101b
0101b
0101b
Load "5555h" in 7 Clocks
Host to Device
0000b
Dat a
1010b
TAR
1010b
1 Clock Load "AAh" in 2 Clocks
1111b
Tri-State
2 Clocks
RSYNC
0000b
1 Clock
TA R
1111b
Tri-State
2 Clocks
Device to Host
CLK
RST # or INIT#
FWH4
2nd Start
F W H [ 3: 0 ]
1110b
1 C lock
Address
IDSE L
ID[3:0]
xxxxb
x1xxb
1 C lock
xxxxb
0010b
IMSIZE
1010b
1010b
1010b
L o a d "2AAAh" in 7 C locks
0 0 00 b
Dat a
0101b
TAR
0101b
1 C lock Load "55h" in 2 Clocks
Host to Device
1111b
Tri-State
2 C locks
RSYNC
1 C lock
TA R
1111b
0 00 0 b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
FWH4
F W H [ 3: 0 ]
3rd Start
IDSE L
1110b
ID[3:0]
1 C lock
Address
xxxxb
x1xxb
1 C lock
xxxxb
0101b
IMSIZE
0101b
0101b
01 0 1 b
L o a d "5555h" in 7 C locks
0000b
Dat a
0000b
10 0 0 b
1 C lock Load "80h" in 2 Clocks
TAR
1111b
Tri-State
2 C locks
RSYNC
0 0 00 b
1 C lock
Host to Device
TA R
1111b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
FWH4
F W H [ 3: 0 ]
4th Start
IDSE L
1110b
ID[3:0]
1 C lock
Address
xxxxb
x1xxb
1 C lock
xxxxb
0101b
IMSIZE
0101b
0101b
0 10 1 b
L o a d "5555" in 7 Clocks
0000b
Dat a
0101b
1010b
1 C lock Load "AAh" in 2 Clocks
Host to Device
TAR
1111b
Tri-State
2 C locks
RSYNC
1 C lock
TA R
1111b
0 00 0 b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
FWH4
F W H [ 3: 0 ]
5th Start
IDSE L
1110b
ID[3:0]
1 C lock
Address
xxxxb
x1xxb
1 C lock
xxxxb
0010b
IMSIZE
0010b
1010b
10 1 0 b
L o a d "2AAAh" in 7 C locks
0000b
Dat a
0101b
01 0 1 b
1 C lock Load "55h" in 2 Clocks
Host to Device
TAR
1111b
Tri-State
2 C locks
RSYNC
0 0 00 b
1 C lock
TA R
1111b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
FWH4
6th Start
FW H [ 3 : 0 ]
1110b
1 C lock
ID[3:0]
IMSIZE
Address
IDSE L
xxxxb
x1xxb
1 C lock
xxxxb
SA[19:16]
SA[15:12 ]
xxxxb
xxxxb
Loa d Sector Address in 7 C locks
Host to Device
0000b
Internal Erase
Start
Dat a
0000b
0011b
1 C lock Load "30h" in 2 Clocks
TAR
1111b
Tri-State
2 Clocks
RSYNC
0 00 0 b
1 Clock
TA R
1111b
Tri-State
2 Clocks
Device to Host
SA = Sector Address
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
12
IS49FL004T
FWH BLOCK ERASE WAVEFORMS
CLK
RST # or INIT#
FWH4
Memory
Write Cycle IDSE L
F W H [ 3: 0 ]
1110b
1 Clock
ID[3:0]
Address
xxxxb
x1xxb
1 Clock
xxxxb
0101b
IMSIZE
0101b
0101b
0101b
Load "5555h" in 7 Clocks
0000b
Dat a
1010b
TAR
1010 b
1 Clock Load "AAh" in 2 Clocks
1111b
Tri-State
2 Clocks
RSYNC
0000b
1 Clock
Host to Device
TA R
1111b
Tri-State
2 Clocks
Device to Host
CLK
RST # or INIT#
FWH4
2nd Start
F W H [ 3: 0 ]
1110b
1 C lock
Address
IDSE L
ID[3:0]
xxxxb
x1xxb
1 C lock
xxxxb
0010b
IMSIZE
1010b
1010b
1010b
L o a d "2AAAh" in 7 C locks
Host to Device
0 0 00 b
Dat a
0101b
TAR
0101b
1 C lock Load "55h" in 2 Clocks
1111b
Tri-State
2 C locks
RSYNC
1 C lock
TA R
1111b
0 00 0 b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
FWH4
F W H [ 3: 0 ]
3rd Start
IDSE L
1110b
ID[3:0]
1 C lock
Address
xxxxb
x1xxb
1 C lock
xxxxb
0101b
IMSIZE
0101b
0101b
01 0 1 b
L o a d "5555h" in 7 C locks
0000b
Dat a
0000b
TAR
1 0 00 b
1 C lock Load "80h" in 2 Clocks
1111b
Tri-State
2 C locks
RSYNC
0 0 00 b
1 C lock
Host to Device
TA R
1111b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
FWH4
F W H [ 3: 0 ]
4th Start
IDSE L
1110b
ID[3:0]
1 C lock
Address
xxxxb
x1xxb
1 C lock
xxxxb
0101b
IMSIZE
0101b
0101b
0 1 01 b
Loa d "5555" in 7 Clocks
Host to Device
0000b
Dat a
0101b
1010b
1 C lock Load "AAh" in 2 Clocks
TAR
1111b
Tri-State
2 C locks
RSYNC
1 C lock
TA R
1111b
0 00 0 b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
FWH4
F W H [ 3: 0 ]
5th Start
IDSE L
1110b
ID[3:0]
1 C lock
Address
xxxxb
x1xxb
1 C lock
xxxxb
0010b
IMSIZE
0010b
1010b
10 1 0 b
L o a d "2AAAh" in 7 C locks
Host to Device
0000b
Dat a
0101b
0 1 01 b
1 C lock Load "55h" in 2 Clocks
TAR
1111b
Tri-State
2 C locks
RSYNC
0 0 00 b
1 C lock
TA R
1111b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
FWH4
FW H [ 3 : 0 ]
6th Start
IDSE L
1110 b
ID[3:0]
1 Clock
IMSIZE
Address
xxxxb
x1xxb
1 Clock
xxxxb
BA[19:16]
BA[15:14 ]
+ xxb
xxxxb
xxxxb
Load Block Address in 7 Clocks
Host to Device
0000b
Internal Erase
Start
Dat a
0000b
0101b
1 C lock Load "50h" in 2 Clocks
TAR
1111b
Tri-State
2 C locks
RSYNC
0000 b
1 C lock
TA R
1111b
Tri-State
2 Clocks
Device to Host
BA = Block Address
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
13
IS49FL004T
FWH MODE OPERATION (CONTINUED)
FWH GPI REGISTER READ WAVEFORMS
CLK
RST# or INIT#
FWH4
FWH[3:0]
Memor y
Read
Cycle
IDSEL
1101b
ID[3:0]
1 Clock
1 Clock
Address
xxxxb
x0xxb
1100b
0000b
IMSIZE
0001b
0000b
0000b
0000b
1 Clock
Load Address "xBC0100h" in 7 Clocks
From Host to Device
TAR
1111b
Tri-State
RSYN C
Data
D[7:4]
Next Start
TAR
1111b
Tri-State
0000b
D[3:0]
2 Clocks
1 Clock
Data Out 2 Clocks
2 Clocks
From Device to Host
TAR
RSYN C
1101b
1 Clock
FWH BLOCK LOCKING REGISTER READ WAVEFORMS
CLK
RST# or INIT#
FWH4
FWH[3:0]
Memor y
Read
Cycle
IDSEL
1101b
ID[3:0]
1 Clock
Address
xxxxb
x0xxb
1 Clock
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
A[19:16]
0000b
IMSIZE
0000b
0000b
Load Address "xBx0002h" in 7 Clocks
From Host to Device
0010b
0000b
1 Clock
1111b
Tri-State
2 Clocks
0000b
1 Clock
Data
D[3:0]
Next Start
TAR
D[7:4]
1111b
Tri-State
Data Out 2 Clocks
2 Clocks
From Device to Host
1101b
1 Clock
14
IS49FL004T
LPC MODE OPERATION
LPC MODE MEMORY READ/WRITE OPERATION
In LPC mode, the IS49FL004 use the 5-pin LPC
interface includes 4-bit LAD[3:0] and LFRAME# pins to
communicate with the host system. The addresses and
data are transmitted through the 4-bit LAD[3:0] bus synchronized with the input clock on CLK pin during a LPC
memory cycle operation. The address or data on LAD[3:
0] bus is latched on the rising edge of the clock. The
pulse of LFRAME# signal inserted for one or more clocks
indicates the start of a LPC memory read or write cycle.
Once the LPC memory cycle is started, asserted by
LFRAME#, a START value “0000b” is expected by the
devices as a valid command cycle. Then a CYCTYPE +
DIR value (“010xb” for memory read cycle or “011xb” for
memory write cycle) is used to indicates the type of
memory cycle. Refer to Table 4 and 5 for LPC Memory
Read and Write Cycle Definition.
There are 8 clock fields in a LPC memory cycle that
gives a 32 bit memory address A31 - A0 through LAD[3:
0] with the most-significant nibble first. The memory
space of IS49FL004 are mapped directly to top of
4 Gbyte system memory space. See Table 11 for System Memory Map.
The IS49FL004 is mapped to the address location of
(FFFFFFFFh - FFF80000h), the A31- A19 must be
loaded with “1” to select and activate the device during a
LPC memory operation. Only A18 - A0 is used to decode and access the 512 Kbyte memory.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
15
IS49FL004T
LPC MODE OPERATION (CONTINUED)
Table 4: LPC Memory Read Cycle Definition
Clock Cycle
Field
LAD[3:0]
Direction
1
START
0000
IN
Start of Cycle: "0000b" indicates the start of a LPC memory
cycle.
2
CYCTYPE
+
DIR
IN
Cycle Type: Indicates the type of a LPC memory read cycle.
CYCTYPE: Bits 3 - 2 must be "01b" for memory cycle. DIR:
Bit 1 = "0b" indicates the type of cycle for Read. Bit 0 is
reserved.
Address Cycles: This is the 32-bit memory address. The
addresses transfer most-significant nibble first and leastsignificant nibble last. (i.e., A31 - 28 on LAD[3:0] first, and A3
- A0 on LAD[3:0] last).
010x
Description
3 - 10
ADDR
YYYY
IN
11
TAR0
1111
IN then
Float
12
TAR1
1111
(float)
13
SYNC
0000
OUT
Sync: The device indicates the least-significant nibble of data
byte will be ready in next clock cycle.
14 - 15
DATA
YYYY
OUT
Data Cycles: The 8-bits data transferred with least-significant
nibble first and most-significant nibble last. (i.e., I/O3 - I/O0 on
LAD[3:0] first, then I/O7 - I/O4 on LAD[3:0] last).
16
TAR0
1111
OUT then
Float
17
TAR1
1111
(float)
Float then Turn-Around Cycle 1: The Chipset resumes control of the bus
during this cycle.
IN
Turn-Around Cycle 0: The Chipset has driven the bus to all
"1"s and then float the bus.
Float then Turn-Around Cycle 1: The device takes control of the bus
during this cycle.
OUT
Turn-Around Cycle 0: The device has driven the bus to all
"1"s and then floats the bus.
LPC MEMORY READ CYCLE WAVEFORMS
CLK
RST# or INIT#
LF RAME #
LAD[3:0]
Start
Memor y
Read
Cycle
0000b
010Xb
1 Clock
1 Clock
Address
1111b
1111b
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
1111b
11b +
A[17:16]
TAR
A[15:12]
Load Address in 8 Clocks
From Host to Device
A[11:8]
A[7:4]
A[3:0]
1111b
Tri-State
2 Clocks
SYN C
Data
D[7:4]
Next Start
TAR
0000b
D[3:0]
1 Clock
Data Out 2 Clocks
2 Clocks
From Device to Host
1111b
0000b
Tri-State
1 Clock
16
IS49FL004T
LPC MODE OPERATION (CONTINUED)
Table 5: LPC Memory Write Cycle Definition
Clock Cycle
Field
LAD[3:0]
Direction
1
START
0000
IN
Start of Cycle: "0000b" to indicate the start of a LPC
memory cycle.
2
CYCTYPE
+
DIR
IN
Cycle Type: Indicates the type of a LPC memory write cycle.
CYCTYPE: Bits 3 - 2 must be "01b" for memory cycle. DIR:
Bit 1 = "1b" indicates the type of cycle for Write. Bit 0 is
reserved.
011x
Description
3 - 10
ADDR
YYYY
IN
Address Cycles: This is the 32-bit memory address. The
addresses transfer most-significant nibble first and leastsignificant nibble last. (i.e., A31 - 28 on LAD[3:0] first, and A3
- A0 on LAD[3:0] last).
11 - 12
DATA
YYYY
IN
Data Cycles: The 8-bits data transferred with least-significant
nibble first and most-significant nibble last. (i.e., I/O3 - I/O0 on
LAD[3:0] first, then I/O7 - I/O4 on LAD[3:0] last).
13
TAR0
1111
IN then
Float
14
TAR1
1111
(float)
15
SYNC
0000
OUT
Sync: The device indicates that it has received the data or
command.
16
TAR0
1111
OUT then
Float
Turn-Around Cycle 0: The device has driven the bus to all
"1"s and then floats the bus.
17
TAR1
1111
(float)
Float then Turn-Around Cycle 1: The Chipset resumes control of the bus
during this cycle.
IN
Turn-Around Cycle 0: The Chipset has driven the bus to all
"1"s and then float the bus.
Float then Turn-Around Cycle 1: The device takes control of the bus
during this cycle.
OUT
LPC MEMORY WRITE CYCLE WAVEFORMS
CLK
RST# or INIT#
LF RAME #
LAD[3:0]
Start
Memor y
Write
Cycle
0000b
011Xb
1 Clock
1 Clock
Address
1111b
1111b
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
1111b
A[19:16]
Data
A[15:12]
A[11:8]
Load Address in 8 Clocks
From Host to Device
A[7:4]
A[3:0]
D[3:0]
TAR
D[7:4]
Load Data in 2 Clocks
1111b
Tri-State
2 Clocks
SYNC
0000b
Next Start
TAR
1111b
Tri-State
1 Clock
2 Clocks
From Device to Host
0000b
1 Clock
17
IS49FL004T
LPC MODE OPERATION (CONTINUED)
LPC BYTE PROGRAM WAVEFORMS
CLK
RST# or INIT#
LFRAME#
1st Start
LAD[3:0]
0000b
1 Clock
Memor y
Write
Cycle
011Xb
Address
1111b
1111b
1 Clock
1111b
11xxb
Data
0101b
0101b
0101b
0101b
Load "5555h" in 8 Clocks
1010b
TAR
1010b
Load "AAh" in 2 Clocks
1111b
Tri-State
2 Clocks
Sync
0000b
1 Clock
Host to Device
TAR
1111b
Tri-State
2 Clocks
Device to Host
CLK
RST# or INIT#
LFRAME#
LAD[3:0]
2nd Start
Memor y
Write
Cycle
0000b
011Xb
1 Clock
1 Clock
Address
1111b
1111b
1111b
11xxb
Data
0010b
1010b
1010b
1010b
Load "2AAAh" in 8 Clocks
0101b
TAR
0101b
Load "55h" in 2 Clocks
1111b
Tri-State
2 Clocks
Sync
0000b
1 Clock
Host to Device
TAR
1111b
Tri-State
2 Clocks
Device to Host
CLK
RST# or INIT#
LFRAME#
3rd Start
LAD[3:0]
Memor y
Write
Cycle
0000b
011Xb
1 Clock
1 Clock
Address
1111b
1111b
1111b
11xxb
Data
0101b
0101b
0101b
0101b
Load "5555h" in 8 Clocks
0000b
TAR
1010b
Load "A0h" in 2 Clocks
1111b
Tri-State
2 Clocks
Sync
0000b
1 Clock
Host to Device
TAR
1111b
Tri-State
2 Clocks
Device to Host
CLK
RST# or INIT#
LFRAME#
LAD[3:0]
4th Start
Memor y
Write
Cycle
0000b
011Xb
1 Clock
1 Clock
Address
1111b
1111b
1111b
A[19:16]
Data
A[15:12]
A[11:8]
A[7:4]
Load Address in 8 Clocks
D[3:0]
TAR
D[7:4]
Load Data in 2 Clocks
Host to Device
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
A[3:1]
1111b
Tri-State
2 Clocks
Sync
0000b
1 Clock
TAR
1111b
Tri-State
2 Clocks
Device to Host
18
IS49FL004T
LPC SECTOR ERASE WAVEFORMS
CLK
RST # or INIT#
LFRAME#
1st Start
LAD[3:0 ]
Memory
Write
Cycle
0000b
011X b
1 Clock
1 Clock
Address
1111b
1111b
1111b
11xxb
Dat a
0101b
0101b
0101b
0101b
Load "5555h" in 8 Clocks
TAR
1010b
1010 b
Load "AAh" in 2 Clocks
1111b
Tri-State
2 Clocks
Sync
0000b
1 Clock
Host to Device
TA R
1111b
Tri-State
2 Clocks
Device to Host
CLK
RST # or INIT#
LFRAME#
LAD[3:0 ]
2nd Start
Memory
Write
Cycle
0000b
011X b
1 C lock
1 C lock
Address
1 11 1 b
1111b
1 1 11 b
11xxb
Dat a
0010b
1010b
1010b
1 0 10 b
L o a d "2AAAh" in 8 C locks
0101b
TAR
0101b
Load "55h" in 2 Clocks
1111b
Tri-State
2 C locks
Sync
0 00 0 b
1 C lock
Host to Device
TA R
1111b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
LFRAME#
3rd Start
LAD[3:0 ]
Memory
Write
Cycle
0000b
011X b
1 C lock
1 C lock
Address
1 11 1 b
1111b
1 1 11 b
11xxb
Dat a
0101b
0101b
01 0 1 b
0101b
L o a d "5555h" in 8 C locks
0000b
1 0 00 b
Load "80h" in 2 Clocks
TAR
1111b
Tri-State
2 C locks
Sync
0 0 00 b
1 C lock
Host to Device
TA R
1111b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
LFRAME#
LAD[3:0 ]
4th Start
Memory
Write
Cycle
0000b
011X b
1 C lock
1 C lock
Address
1 11 1 b
1111b
1 1 11 b
11xxb
Dat a
0101b
0101b
0 1 01 b
0101b
Loa d "5555" in 8 Clocks
0101b
1010b
Load "AAh" in 2 Clocks
TAR
1111b
Tri-State
2 C locks
Sync
0 00 0 b
1 C lock
Host to Device
TA R
1111b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
LFRAME#
5th Start
LAD[3:0 ]
Memory
Write
Cycle
0000b
011X b
1 C lock
1 C lock
Address
1 11 1 b
1111b
1 1 11 b
11xxb
Dat a
0010b
1010b
10 1 0 b
1010b
L o a d "2AAAh" in 8 C locks
0101b
0 1 01 b
TAR
1111b
Tri-State
Load "55h" in 2 Clocks
2 C locks
Dat a
TAR
Sync
0 0 00 b
1 C lock
Host to Device
TA R
1111b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
LFRAME#
6th Start
LAD[3:0 ]
Memory
Write
Cycle
0000b
011X b
1 Clock
1 Clock
Internal Erase
Start
Address
1 1 11 b
1111b
1 1 11 b
SA[19:16]
SA[15:12 ]
xxxxb
Load Sector Address in 8 Clocks
Host to Device
xxxxb
xxxxb
0000b
0011b
Load "30h" in 2 Clocks
1111b
Tri-State
2 Clocks
Sync
0000 b
1 Clock
TA R
1111b
Tri-State
2 C locks
Device to Host
SA = Sector Address
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
19
IS49FL004T
LPC BLOCK ERASE WAVEFORMS
CLK
RST # or INIT#
LFRAME#
1st Start
LAD[3:0 ]
Memory
Write
Cycle
0000b
011X b
1 Clock
1 Clock
Address
1111b
1111b
1111b
11xxb
Dat a
0101b
0101b
0101b
0101b
Load "5555h" in 8 Clocks
TAR
1010b
1010 b
Load "AAh" in 2 Clocks
1111b
Tri-State
2 Clocks
Sync
0000b
1 Clock
Host to Device
TA R
1111b
Tri-State
2 Clocks
Device to Host
CLK
RST # or INIT#
LFRAME#
LAD[3:0 ]
2nd Start
Memory
Write
Cycle
0000b
011X b
1 C lock
1 C lock
Address
1 11 1 b
1111b
1 1 11 b
11xxb
Dat a
0010b
1010b
1010b
1 0 10 b
L o a d "2AAAh" in 8 C locks
0101b
TAR
0101b
Load "55h" in 2 Clocks
1111b
Tri-State
2 C locks
Sync
0 00 0 b
1 C lock
Host to Device
TA R
1111b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
LFRAME#
3rd Start
LAD[3:0 ]
Memory
Write
Cycle
0000b
011X b
1 C lock
1 C lock
Address
1 11 1 b
1111b
1 1 11 b
11xxb
Dat a
0101b
0101b
01 0 1 b
0101b
L o a d "5555h" in 8 C locks
0000b
1 0 00 b
Load "80h" in 2 Clocks
TAR
1111b
Tri-State
2 C locks
Sync
0 0 00 b
1 C lock
Host to Device
TA R
1111b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
LFRAME#
LAD[3:0 ]
4th Start
Memory
Write
Cycle
0000b
011X b
1 C lock
1 C lock
Address
1 11 1 b
1111b
1 1 11 b
11xxb
Dat a
0101b
0101b
0 1 01 b
0101b
Loa d "5555" in 8 Clocks
0101b
1010b
Load "AAh" in 2 Clocks
TAR
1111b
Tri-State
2 C locks
Sync
0 00 0 b
1 C lock
Host to Device
TA R
1111b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
LFRAME#
5th Start
LAD[3:0 ]
Memory
Write
Cycle
0000b
011X b
1 C lock
1 C lock
Address
1 11 1 b
1111b
1 1 11 b
11xxb
Dat a
0010b
1010b
10 1 0 b
1010b
L o a d "2AAAh" in 8 C locks
0101b
0 1 01 b
TAR
1111b
Tri-State
Load "55h" in 2 Clocks
2 C locks
Dat a
TAR
Sync
0 0 00 b
1 C lock
Host to Device
TA R
1111b
Tri-State
2 C locks
Device to Host
CLK
RST # or INIT#
LFRAME#
6th Start
LAD[3:0 ]
Memory
Write
Cycle
0 0 00 b
011X b
1 Clock
1 Clock
Internal Erase
Start
Address
1111b
1111b
1 1 11 b
BA[19:16]
BA[15:14 ]
+ xxb
xxxxb
xxxxb
Load Block Address in 8 Clocks
Host to Device
xxxxb
0000b
0101b
Load "50h" in 2 Clocks
1111b
Tri-State
2 Clocks
Sync
0 00 0 b
1 Clock
TA R
1111b
Tri-State
2 Clocks
Device to Host
BA = Block Address
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
20
IS49FL004T
LPC MODE OPERATION (CONTINUED)
LPC GPI REGISTER READ WAVEFORMS
CLK
RST# or INIT#
LF RAME #
LAD[3:0]
Start
Memor y
Read
Cycle
0000b
010Xb
1 Clock
Address
1111b
1111b
1 Clock
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
1011b
1100b
TAR
0000b
0001b
Load Address "FFBC0100h" in 8 Clocks
From Host to Device
0000b
0000b
1111b
Tri-State
2 Clocks
SYN C
0000b
1 Clock
Data
D[3:0]
D[7:4]
Next Start
TAR
1111b
Tri-State
Data Out 2 Clocks
2 Clocks
From Device to Host
0000b
1 Clock
21
IS49FL004T
REGISTERS
The IS49FL004 have two registers include the Gen- eral
Purpose Inputs Register (GPI_REG - available in
FWH and LPC modes) and the Block Locking Register
(BL_REG - available in FWH mode only). The GPI_REG
can be read at FFBC0100h in the 4 Gbyte system
memory map. And the BL_REG can be read through
FFBx0002h where x = F - 0h. See Table 8 and 9 for the
address of BL_REG.
GENERAL PURPOSE INPUTS REGISTER
BLOCK LOCKING REGISTERS
The devices support block read-lock, write-lock, and lockdown features through a set of Block Locking Registers.
Each memory block has an associated 8-bit read/writable block locking register. Only Bit 2 to Bit 0 are used
in current version and Bit 7 to Bit 3 are reserved for future
use. The default value of BL_REG is “01h” at power up.
The definition of BL_REG is listed in Table 7. The FWH
Register Configuration Map of IS49FL004 is shown
in Table 9. Unused register will be read as 00h.
The IS49FL004 contain an 8-bit General Purpose
Inputs Register (GPI_REG) available in FWH and LPC
modes. Only Bit 4 to Bit 0 are used in current version
and Bit 7 to Bit 5 are reserved for future use. The
GPI_REG is a pass-through register with the value set
by GPI[4:0] pin during power-up. The GPI_REG is used
for system design purpose only, the devices do not use
this register. This register is read only and can be read
at address location FFBC0100h in the 4 GByte system
memory map through a memory read cycle. Refer to
Table 6 for General Purpose Input Register Definition.
Table 6. General Purpose Inputs Register Definition
Bit
Bit Name
7:5
Function
32-PLCC Pin#
32-VSOP Pin#
Reserved
-
-
4
GPI4
GPI_REG Bit 4
30
6
3
GPI3
GPI_REG Bit 3
3
11
2
GPI2
GPI_REG Bit 2
4
12
1
GPI1
GPI_REG Bit 1
5
13
0
GPI0
GPI_REG Bit 0
6
14
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
22
IS49FL004T
REGISTERS (CONTINUED)
Table 7. Block Locking Register Definition
Bit
7:3
Function
Reserved
2
Read-Lock
"1" = Prevents read operations in the block where set.
"0" = Normal operation for reads in the block where clear. Default state.
1
Lock-Down
"1" = Prevents further set or clear operations to the Write-Lock and Read-Lock bits. LockDown only can be set, but not cleared. The block will remain locked-down until reset (with
RST# or INIT#), or until the device is power-on reset.
"0" = Normal operation for Write-Lock and Read-Lock bit altering in the block where clear.
Default state.
0
Write-Lock
"1" = Prevents program or erase operations in the block where set. Default state.
"0" = Normal operation for programming and erase in the block where clear.
Data
Bit[7:3]
Bit 2
Bit 1
Bit 0
00h
00000
0
0
0
Full access.
01h
00000
0
0
1
Write locked. Default state at power-up.
02h
00000
0
1
0
Locked open (full access locked down).
03h
00000
0
1
1
Write-locked down.
04h
00000
1
0
0
Read locked.
05h
00000
1
0
1
Read and write locked.
06h
00000
1
1
0
Read-locked down.
07h
00000
1
1
1
Read-locked and write-locked down.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
Resulting Block State
23
IS49FL004T
REGISTERS (CONTINUED)
Table 9. IS49FL004 Block Locking Register Address
Register
Block Size
(Kbytes)
Protected Block
Address Range
Memory Map Address
T_BLOCK_LK
64
70000h - 7FFFFh
FFBF0002h
T_MINUS01_LK
64
60000h - 6FFFFh
FFBE0002h
T_MINUS02_LK
64
50000h - 5FFFFh
FFBD0002h
T_MINUS03_LK
64
40000h - 4FFFFh
FFBC0002h
T_MINUS04_LK
64
30000h - 3FFFFh
FFBB0002h
T_MINUS05_LK
64
20000h - 2FFFFh
FFBA0002h
T_MINUS06_LK
64
10000h - 1FFFFh
FFB90002h
T_MINUS07_LK
64
00000h - 0FFFFh
FFB80002h
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
24
IS49FL004T
A/A MUX MODE OPERATION
are latched on the falling edge of R/C# pin. The column
addresses (internal address A21 - A11) are latched on
The IS49FL004 offers a Address/Address Multi- the rising edge of R/C# pin. The IS49FL004 uses A18
plexed (A/A Mux) mode for off-system operation, typi- - A0 internally to decode and access the 256 Kbytes
cally on an EPROM Programmer, similar to a traditional memory space.
Flash memory except the address input is multiplexed.
In the A/A Mux mode, the programmer must drive the During a read operation, the OE# signal is used to conOE# pin to low (VIL) for read or WE# pins to low for write trol the output of data to the 8 I/O pins - I/O[7:0]. During
operation. The devices have no Chip Enable (CE#) pin a write operation, the WE# signal is used to latch the
for chip selection and activation as traditional Flash input data from I/O[7:0]. See Table 10 for Bus Operation
memory. The R/C#, OE# and WE# pins are used to Modes.
activate the device and control the power. The 11 multiplex address pins - A[10:0] and a R/C# pin are used to
load the row and column addresses for the target memory
location. The row addresses (internal address A10 - A0)
A/A MUX MODE READ/WRITE OPERATION
Table 10. A/A Mux Mode Bus Operation Modes
Mode
RST#
OE#
WE#
Read
VIH
V IL
VIH
Write
VIH
V IH
VIL
X
D IN
Standby
VIH
V IH
VIH
X
High Z
Output Disable
VIH
V IH
X
X
High Z
Reset
VIL
X
X
X
High Z
Product Identification
VIH
VIL
VIH
Address
X
(1)
A2 - A21 = X,
A1 = VIL, A0 = VIL
and
A1 = VIH, A0 = VIH
A2 - A21 = X,
A1 = VIL, A0 = VIH
I/O
D OUT
Manufacturer ID
Device ID
(2)
(2)
Notes:
1. X can be VIL or VIH.
2. Refer to Table 1 for the Manufacturer ID and Device ID of devices.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
25
IS49FL004T
SYSTEM MEMORY MAP
Table 11. System Memory Map
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
26
IS49FL004T
MEMORY BLOCKS AND ADDRESSES (CONTINUED)
Table 13. IS49FL004 Sector/Block Address Table
Hardware
Protection
Block
Block Size
(Kbytes)
Sector
Sector Size
(Kbytes)
Address Range
TBL#
Block 7 (Boot
Block)
64
"
"
70000h - 7FFFFh
Block 6
64
"
"
60000h - 6FFFFh
Block 5
64
"
"
50000h - 5FFFFh
Block 4
64
"
"
40000h - 4FFFFh
Block 3
64
"
"
30000h - 3FFFFh
Block 2
64
"
"
20000h - 2FFFFh
Block 1
64
"
"
10000h - 1FFFFh
Sector 15
4
0F000h - 0FFFFh
:
:
:
Sector 1
4
01000h - 01FFFh
Sector 0
4
00000h - 00FFFh
WP#
Block 0
64
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
27
IS49FL004T
COMMAND DEFINITION
Table 14. Software Data Protection Command Definition
Command
Sequence
Read
Bus
Cycle
1st Bus
Cycle
Addr(2) Data
2nd Bus
Cycle
Addr Data
3rd Bus
Cycle
Addr Data
4th Bus
Cycle
Addr Data
5th Bus
Cylce
Addr Data
6th Bus
Cycle
Addr Data
1
Addr D OUT
6
5555h AAh
2AAAh 55h
5555h 80h
5555h AAh
2AAAh 55h
5555h 10h
Sector Erase
6
5555h AAh
2AAAh 55h
5555h 80h
5555h AAh
2AAAh 55h
SA
(3)
30h
Block Erase
6
5555h AAh
2AAAh 55h
5555h 80h
5555h AAh
2AAAh 55h
BA
(4)
50h
Byte Program
4
5555h AAh
2AAAh 55h
5555h A0h
Addr DIN
Product ID Entry
3
5555h AAh
2AAAh 55h
5555h 90h
2AAAh 55h
5555h F0h
Chip Erase
(1)
Product ID Exit
(5)
3
5555h AAh
Product ID Exit
(5)
1
XXXXh F0h
Notes:
1. Chip erase is available in A/A Mux Mode only.
2. Address A[15:0] is used for SDP command decoding internally and A15 must be “0” in FWH/LPC and A/A
Mux modes. AMS - A16 = Don’t care where AMS is the most-significant address of IS49FL00x.
3. SA = Sector address to be erased.
4. BA = Block address to be erased.
5. Either one of the Product ID Exit command can be used.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
28
IS49FL004T
DEVICE OPERATIONS FLOWCHARTS
AUTOMATIC PROGRAMMING
Start
Load Data AA h
to
Address 5555h
Load Data 55h
to
Address 2AAA h
Load Data A 0h
to
Address 5555h
Address
Increment
Load Program
Data to
Progra m Address
I/O7 = Data?
or
I/O6 Stop Toggle?
No
Y es
Last Address?
No
Y es
Program mi n g
Completed
Chart 1. Automatic Programming Flowchart
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
29
IS49FL004T
DEVICE OPERATIONS FLOWCHARTS
(CONTINUED)
AUTOMATIC ERASE
Start
Write Chip, Sector,
or Block
Era s e C o m m a n d
Data = FFh?
or
I/O6 Stop Toggle?
No
Y es
Erasur e
Complete d
CHIP ERASE COMMAND
SECTOR ERASE COMMAND
Notes:
1. Please see Table 12 to Table 13 for
Sector/Block Address Tables.
2. Only erase one sector or one block per
erase operation.
3. When the TBL# pin is pulled low (VIL),
the boot block will not be erased.
BLOCK ERASE COMMAND
Load Data AA h
to
Address 5555h
Load Data AA h
to
Address 5555h
Load Data AA h
to
Address 5555h
Load Data 55h
to
Address 2AAA h
Load Data 55h
to
Address 2AAA h
Load Data 55h
to
Address 2AAA h
Load Data 80h
to
Address 5555h
Load Data 80h
to
Address 5555h
Load Data 80h
to
Address 5555h
Load Data AA h
to
Address 5555h
Load Data AA h
to
Address 5555h
Load Data AA h
to
Address 5555h
Load Data 55h
to
Address 2AAA h
Load Data 55h
to
Address 2AAA h
Load Data 55h
to
Address 2AAA h
Load Data 30h
to
(1,2,3)
SA
Load Data 50h
to
(1,2,3)
BA
Load Data 10h
to
Address 5555h (3)
Chart 2. Automatic Erase Flowchart
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
30
IS49FL004T
DEVICE OPERATIONS FLOWCHARTS
(CONTINUED)
SOFTWARE PRODUCT IDENTIFICATION ENTRY
SOFTWARE PRODUCT IDENTIFICATION EXIT
Load Data AA h
to
Address 5555h
Load Data AA h
to
Address 5555h
Load Data 55h
to
Address 2AAA h
Load Data 55h
to
Address 2AAA h
Load Data 90h
to
Address 5555h
Load Data F0h
to
Address 5555h
Enter Product
Identification
Mode (1,2)
Exit Product
Identification
Mode (3)
Load Data F0h
to
Address XXXX h
or
Exit Product
Identification
Mode (3)
Notes:
1. After entering Product Identification Mode, the Manufacturer ID and the Device ID of IS49FL00x can be read.
2. Product Identification Exit command is required to end the Product Identification mode and return to standby mode.
3. Either Product Identification Exit command can be used, the device returns to standby mode.
Chart 3. Software Product Identification Entry/Exit Flowchart
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
31
IS49FL004T
ABSOLUTE MAXIMUM RATINGS (1)
Temperature Under Bias
-55oC to +125oC
Storage Temperature
-65oC to +150oC
Standard Package
240oC 3 Seconds
Lead-free Package
260oC 3 Seconds
Surface Mount Lead Soldering Temperature
Input Voltage with Respect to Ground on All Pins
(2)
-0.5 V to VCC + 0.5 V
All Output Voltage with Respect to Ground
-0.5 V to VCC + 0.5 V
VCC (2)
-0.5 V to +6.0 V
Notes:
1. Stresses under those listed in “Absolute Maximum Ratings” may cause permanent damage
to the device. This is a stress rating only. The functional operation of the device or any other
conditions under those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating condition for extended periods may affected
device reliability.
2. Maximum DC voltage on input or I/O pins are +6.25 V. During voltage transitioning period,
input or I/O pins may overshoot to VCC + 2.0 V for a period of time up to 20 ns. Minimum
DC voltage on input or I/O pins are -0.5 V. During voltage transitioning period, input or I/O
pins may undershoot GND to -2.0 V for a period of time up to 20 ns.
DC AND AC OPERATING RANGE
Part Number
IS49FL004
Operating Temperature
0o C to 85oC
Vcc Power Supply
3.0 V - 3.6 V
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
32
IS49FL004T
DC CHARACTERISTICS
Symbol
Parameter
Condition
Min
Typ
Max
Units
100
A
II
Input Leakage Current for IC, V = 0 V to V , V = V
IN
CC
CC
CC max
ID[3:0] pins
ILI
Input Leakage Current
VIN = 0 V to VCC, VCC = VCC max
A
ILO
Output Leakage Current
VI/O = 0 V to VCC , VCC = VCC max
A
Standby VCC Current
FWH4 or LFRAME# = VIH,
(FWH/LPC Mode)
f = 33 MHz; VCC = VCC max
ISB
500
A
10
mA
2
15
mA
7
20
mA
FWH4 or LFRAME# = VIL,
Ready Mode VCC Current
IRY
(FWH/LPC Mode)
f = 33 MHz; IOUT = 0 mA,
VCC = VCC max
FWH4 or LFRAME# = VIL,
VCC Active Read Current
ICC1
ICC2
(FWH/LPC Mode)
(1)
f = 33 MHz; IOUT = 0 mA,
VCC = VCC max
VCC Program/Erase Current
VIL
Input Low Voltage
-0.5
0.3 VCC
V
VIH
Input High Voltage
0.7 VCC
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 2.0 mA, VCC = VCC min
0.1 VCC
V
VOH
Output High Voltage
IOH = -100 mA, VCC = VCC min
V
0.9 VCC
Note: 1. Characterized but not 100% tested.
AC CHARACTERISTICS
PIN IMPEDANCE (VCC = 3.3 V, f = 1 MHz, T = 25°C )
Typ
Max
Units
Conditions
C I/O (1)
I/O Pin Capacitance
12
pF
VI/O = 0 V
C IN (1)
Input Capacitance
12
pF
VIN = 0 V
LPIN (2)
Pin Inductance
20
nH
Notes:
1. These parameters are characterized but not 100% tested.
2. Refer to PCI specification.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
33
IS49FL004T
AC CHARACTERISTICS (CONTINUED)
FWH/LPC INTERFACE AC INPUT/OUTPUT CHARACTERISTICS
Symbol
Parameter
Condition
0 < VOUT < 0.3 VCC
IOH (AC)
Switching current
high
0.3 VCC < VOUT < 0.9 VCC
Min
Max
-12 VCC
mA
-17.1 (VCC - VOUT)
mA
Equation C (1)
0.7 VCC < VOUT < VCC
(Test point)
VOUT = 0.7 VCC
VCC > VOUT > 0.6 VCC
IOL (AC)
Switching current low
0.6 VCC > VOUT > 0.1 VCC
Units
mA
-32 VCC
16 VCC
mA
-17.1 (VCC - VOUT)
mA
Equation D (1)
0.18 VCC > VOUT > 0
(Test point)
VOUT = 0.18 VCC
mA
ICL
Low clamp current
-3 < VIN < -1
ICH
High clamp current
VCC + 4 > VIN > VCC + 1
slewr (2)
Output rise slew rate
0.2 VCC - 0.6 VCC load
1
4
V/ns
slewf (2)
Output fall slew rate
0.6 VCC - 0.2 VCC load
1
4
V/ns
38 VCC
-25 + (VIN + 1) / 0.015
mA
25 + (VIN - VCC - 1) /
0.015
mA
Notes:
1. See PCI specification.
2. PCI specification output load is used.
FWH/LPC INTERFACE CLOCK CHARACTERISTICS
Symbol
Parameter
Min
Max
Units
tCYC
Clock Cycle Time
30
ns
tHIGH
Clock High Time
11
ns
tLOW
Clock Low Time
11
ns
Clock Slew Rate
1
INIT# or RST# Slew Rate
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
50
4
V/ns
mV/ns
34
IS49FL004T
AC CHARACTERISTICS (CONTINUED)
FWH/LPC INTERFACE CLOCK WAVEFORM
tC Y C
tH I G H
tL O W
0.5 V C C
0.6 V C C
0.4 V C C
(minimum )
0.3 V C C
0.2 V C C
FWH/LPC INTERFACE MEASUREMENT CONDITION PARAMETERS
Symbol
Value
Units
V TH1
0.6 V CC
V
V TL1
0.2 V CC
V
V TEST
0.4 V CC
V
V MAX1
0.4 V CC
V
Input Signal Edge Rate
1 V/ns
Note: 1. The input test environment is done with 0.1 VCC of overdrive over VIH and VIL. Timing parameters must
be met with no more overdrive that this. VMAX specifies the maximum peak-to-peak waveform allowed
for measuring input timing. Production testing may use different voltage values, but must correlate
results back to these parameter.
FWH/LPC MEMORY READ/WRITE OPERATIONS CHARACTERISTICS
Symbol
Parameter
Min
TCYC
Clock Cycle Time
30
ns
TSU
Input Set Up Time
7
ns
TH
Input Hold Time
0
ns
TVAL
Clock to Data Out
2
TON
Clock to Active Time (float to active delay)
2
TOFF
Clock to Inactive Time (active to float delay)
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
Max
11
Units
ns
ns
28
ns
35
IS49FL004T
AC CHARACTERISTICS (CONTINUED)
FWH/LPC INPUT TIMING PARAMETERS
V TH
CLK
V TEST
tS U
FWH[3:0 ] or
LAD[3:0 ]
tH
V TL
V MAX
INPUT VALID
(Valid Input Data)
FWH/LPC OUTPUT TIMING PARAMETERS
V TH
CLK
V TEST
V TL
tV A L
FWH[3:0] or
LAD[3:0]
(Valid Outpu t Data)
tO F F
FWH[3:0] or
LAD[3:0]
(Floa t Outpu t Data)
tO N
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
36
IS49FL004T
AC CHARACTERISTICS (CONTINUED)
FWH/LPC RESET OPERATION CHARACTERISTICS
Symbol
Parameter
Min
Max
Units
1
ms
Reset Active Time to Clock Stable
100
s
TRSTP
Reset Pulse Width
100
ns
TRSTF
Reset Active to Output Float Delay
TRST (1)
Reset Inactive Time to Input Active
TPRST
Reset Active Time to VCC Stable
TKRST
50
1
ns
s
Note: 1. There will be a 10 µs reset latency if a reset procedure is performed during a programming or erase
operation.
FWH/LPC RESET AC WAVEFORMS
TPRST
VCC
CLK
TKRST
TRSTP
RST#/INIT #
TRST
T RSTF
FWH[3:0 ] or
LAD[3:0]
FWH4 or
LFRAME#
A/A MUX MODE INPUT TEST MEASUREMENT CONDITION PARAMETERS
3.0 V
Input
1.5 V
AC
Mea sure me n t
Level
0.0 V
A/A MUX MODE TEST LOAD CONDITION
TO TESTER
TO DUT
CL
30 pF
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
37
IS49FL004T
AC CHARACTERISTICS (CONTINUED)
A/A MUX MODE READ OPERATIONS CHARACTERISTICS
Symbol
Parameter
Min
Max
270
Units
ns
t RC
Read Cycle Time
t ACC
Address to Output Delay
t RST
RST# High to Row Address Set-up Time
1
ms
t AS
R/C# Address Set-up Time
45
ns
t AH
R/C# Address Hold Time
45
ns
t OE
OE# to Output Delay
t DF
OE# to Output High Z
0
t OH
Output Hold from OE# or Address, whichever occured first
0
ns
t VCS
VCC Set-up Time
50
s
120
ns
50
ns
30
ns
A/A MUX MODE READ OPERATIONS AC WAVEFORMS
RST#
tR C
tR S T
ADDRESS
ROW ADDRESS
tA S
tA H
COLUMN ADDRESS
tA S
tA H
R/ C#
tA C C
OE#
tO E
tD F
WE#
tO H
HIGH Z
OUTPUT
OUTPUT
VA LI D
tV C S
V CC
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
38
IS49FL004T
AC CHARACTERISTICS (CONTINUED)
A/A MUX MODE WRITE (PROGRAM/ERASE) OPERATIONS CHARACTERISTICS
Symbol
Parameter
Min
Max
Units
t RST
RST# High to Row Address Set-up Time
1
ms
t AS
R/C# Address Set-up Time
50
ns
t AH
R/C# Address Hold Time
50
ns
t CWH
R/C# to WE# High Time
50
ns
t OES
OE# High Set-up Time
20
ns
t OEH
OE# High Hold Time
20
ns
t DS
Data Set-up Time
50
ns
t DH
Data Hold Time
5
ns
t WP
Write Pulse Width
100
ns
t WPH
Write Pulse Width High
100
ns
t BP
Byte Programming Time
40
s
t EC
Chip, Sector or Block Erase Cycle Time
80
ms
t VCS
VCC Set-up Time
50
s
A/A MUX MODE WRITE OPERATIONS AC WAVEFORMS
RST#
tR C
tR S T
ADDRESS
ROW ADDRESS
tA S
tA H
COLUMN ADDRESS
tA S
tA H
R/ C#
tC W H
tV C S
tO E H
OE#
tO E S
WE#
OUTPUT
HIGH Z
tD S
tD H
INPUT
DATA
V CC
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
39
IS49FL004T
AC CHARACTERISTICS (CONTINUED)
A/A MUX MODE BYTE PROGRAM OPERATIONS AC WAVEFORMS
4-Byte Progra m Command
ADDRESS
5555
2AAA
tC W H
tW P
5555
BYTE ADDRESS
R/ C #
tW P H
tB P
WE#
OE#
tD H
tD S
DATA
AA
55
INPUT
DATA
A0
VA LI D
DATA
A/A MUX MODE CHIP ERASE OPERATIONS AC WAVEFORMS
6-Byte Chip Eras e Command
ADDRESS
2AAA
5555
5555
2AAA
5555
5555
R/ C #
tC W H
tW P
tW P H
tD S
tD H
tE C
WE#
OE#
DATA IN
AA
55
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
80
AA
55
10
40
IS49FL004T
AC CHARACTERISTICS (CONTINUED)
A/A MUX MODE SECTOR/BLOCK ERASE OPERATIONS AC WAVEFORMS
6-Byte Block Eras e Command
ADDRESS
2AAA
5555
5555
2AAA
5555
SECTOR OR
BLOCK ADDRESS
R/ C #
tC W H
tW P
tW P H
tD S
tD H
tE C
WE#
OE#
DATA IN
AA
80
55
AA
55
30/50
A/A MUX MODE TOGGLE BIT AC WAVEFORMS
ADDRESS
ROW
COLUMN
R/ C#
WE#
tO E H
OE#
tO E
I/O6
D
D
Note: 1. Toggling OE# will operate Toggle Bit.
2. I/O6 may start and end from “1” or “0” in random.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
41
IS49FL004T
AC CHARACTERISTICS (CONTINUED)
A/A MUX MODE DATA# POLLING AC WAVEFORMS
ADDRESS
ROW
COLUMN
R/ C#
WE#
tO E H
OE#
tO E
I/O7
D
D#
D#
D#
D
Note: Toggling OE# will operate Data# Polling.
PROGRAM/ERASE PERFORMANCE
Parameter
Unit
Typ
Max
Sector/Block Erase Time
ms
50
80
From writing erase command to erase completion
Chip Erase Time
ms
50
80
From writing erase command to erase completion
s
25
40
Excludes the time of four-cycle program command
execution
Byte Programming Time
Remarks
Note: These parameters are characterized but not 100% tested.
RELIABILITY CHARACTERISTICS (1)
Parameter
Endurance
Data Retention
ESD - Human Body Model
ESD - Machine Model
Latch-Up
Min
Typ
Unit
Test Method
100,000 (2)
Cycles
JEDEC Standard A117
20
Years
JEDEC Standard A103
2,000
>4,000
Volts
JEDEC Standard A114
200
>400
Volts
JEDEC Standard A115
100 + ICC1
mA
JEDEC Standard 78
Notes:
1. These parameters are characterized but not 100% tested.
2. Preliminary specification only and will be formalized after cycling qualification test.
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
42
IS49FL004T
PACKAGE TYPE INFORMATION
32V
32-Pin Thin Small Outline Package (VSOP - 8 mm x 14 mm)( measure in millimeters)
1.05
0.95
Pin 1 I.D.
0.27
0.17
8.10
7.90
0.50
BSC
0.15
0.05
12.50
12.30
14.20
13.80
1.20
MAX
0.20
0 .1 0
0°
5°
0.25
0.70
0.50
32J
32-Pin Plastic Leaded Chip Carrier (measured in millimeters)
1 2 .5 7
1 2 .3 2
1 1 .5 1
1 1 .3 5
0 . 7 4X 3 0 °
1 5 .1 1
1 4 .8 6
3.56
3.18
Pin 1 I.D.
2.41
1.93
1 4 .0 5
1 3 .8 9
SEATING
PLANE
13.46
12.45
0.53
0.33
1.27 Typ.
0.81
0.66
TOP VIEW
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
SIDE VIEW
43
IS49FL004T
PRODUCT ORDERING INFORMATION
IS49FL00x
T
-33
J C E
Environmental Attribute
E = Lead-free Package
Temperature Range
C = 0°C to +85°C
Package Type
J = 32-pin Plastic J-Leaded Chip Carrier (32J)
V = 32-pin (8 mm x 14 mm) VSOP (32V)
Speed Option
Boot Block Location
T = Top Boot Block
Device Number
IS49FL004 (4 Mbit)
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
44
IS49FL004T
ORDERING INFORMATION:
Density
4M
Frequency
(MHz)
Order Part Number
Package
IS49FL004T-33JCE
32-pin PLCC
IS49FL004T-33VCE
32-pin (8 mm x 14 mm) VSOP
33
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A1
9/19/2013
45
Similar pages