Infineon IKCM15H60GA Control integrated power system Datasheet

Control Integrated POwer
System (CIPOS™)
IKCM15H60GA
Datasheet
For Power Management Application
1
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
Table of Contents
CIPOS™ Control Integrated POwer System ........................................................................................................ 3
Features .............................................................................................................................................................. 3
Target Applications ........................................................................................................................................... 3
Description ......................................................................................................................................................... 3
System Configuration ....................................................................................................................................... 3
Pin Configuration .................................................................................................................................................... 4
Internal Electrical Schematic ................................................................................................................................. 4
Pin Assignment ....................................................................................................................................................... 5
Pin Description .................................................................................................................................................. 5
HIN(U,V,W) and LIN(U,V,W) (Low side and high side control pins, Pin 7 - 12) ................................................ 5
VFO (Fault-output and NTC, Pin 14) ................................................................................................................. 6
ITRIP (Over current detection function, Pin 15) ................................................................................................ 6
VDD, VSS (Low side control supply and reference, Pin 13, 16) ....................................................................... 6
VB(U,V,W) and VS(U,V,W) (High side supplies, Pin 1 - 6) ............................................................................... 6
NW, NV, NU (Low side emitter, Pin 17 - 19) ..................................................................................................... 6
W, V, U (High side emitter and low side collector, Pin 20 - 22) ........................................................................ 6
P (Positive bus input voltage, Pin 23)................................................................................................................ 6
Absolute Maximum Ratings................................................................................................................................... 7
Module Section .................................................................................................................................................. 7
Inverter Section.................................................................................................................................................. 7
Control Section .................................................................................................................................................. 7
Recommended Operation Conditions .................................................................................................................. 8
Static Parameters ................................................................................................................................................... 9
Dynamic Parameters ............................................................................................................................................ 10
Bootstrap Parameters .......................................................................................................................................... 10
Thermistor ............................................................................................................................................................. 11
Mechanical Characteristics and Ratings............................................................................................................ 11
Circuit of a Typical Application ........................................................................................................................... 12
Switching Times Definition .................................................................................................................................. 12
Electrical characteristic ....................................................................................................................................... 13
Package Outline .................................................................................................................................................... 14
Datasheet
2
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
CIPOS™
Control Integrated POwer System
Dual In-Line Intelligent Power Module
3Φ-bridge 600V / 15A
Features
Description
Fully isolated Dual In-Line molded module
The CIPOS™ module family offers the chance for
integrating various power and control components
to increase reliability, optimize PCB size and system
costs.
 TrenchStop IGBTs
 Rugged SOI gate driver technology with stability
against transient and negative voltage
 Allowable negative VS potential up to -11V for
signal transmission at VBS=15V
 Integrated bootstrap functionality
 Over current shutdown
 Temperature monitor
 Under-voltage lockout at all channels
 Low side emitter pins accessible for all phase
current monitoring (open emitter)
 Cross-conduction prevention
 All of 6 switches turn off during protection
 Lead-free terminal plating; RoHS compliant
®
It is designed to control three phase AC motors and
permanent magnet motors in variable speed drives
for applications like a washing machine. The
package concept is specially adapted to power
applications, which need good thermal conduction
and electrical isolation, but also EMI-save control
and overload protection.
TrenchStop® IGBTs and anti parallel diodes are
combined with an optimized SOI gate driver for
excellent electrical performance.
System Configuration
 3 half bridges with TrenchStop® IGBTs and anti
parallel diodes
Target Applications
 3Φ SOI gate driver
 Washing machines
 Thermistor
 Fans
 Pin-to-heasink creepage distance typ. 1.6mm
 Low power motor drives
Datasheet
3
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
Pin Configuration
Bottom View
Figure 1: Pin configuration
Internal Electrical Schematic
Figure 2: Internal schematic
Datasheet
4
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
Pin Assignment
Pin Number
Pin Name
Pin Description
1
VS(U)
U-phase high side floating IC supply offset voltage
2
VB(U)
U-phase high side floating IC supply voltage
3
VS(V)
V-phase high side floating IC supply offset voltage
4
VB(V)
V-phase high side floating IC supply voltage
5
VS(W)
W-phase high side floating IC supply offset voltage
6
VB(W)
W-phase high side floating IC supply voltage
7
HIN(U)
U-phase high side gate driver input
8
HIN(V)
V-phase high side gate driver input
9
HIN(W)
W-phase high side gate driver input
10
LIN(U)
U-phase low side gate driver input
11
LIN(V)
V-phase low side gate driver input
12
LIN(W)
W-phase low side gate driver input
13
VDD
Low side control supply
14
VFO
Fault output / Temperature monitor
15
ITRIP
Over current shutdown input
16
VSS
Low side control negative supply
17
NW
W-phase low side emitter
18
NV
V-phase low side emitter
19
NU
U-phase low side emitter
20
W
Motor W-phase output
21
V
Motor V-phase output
22
U
Motor U-phase output
23
P
Positive bus input voltage
24
NC
No Connection
Pin Description
HIN(U,V,W) and LIN(U,V,W) (Low side and high
side control pins, Pin 7 - 12)
These pins are positive logic and they are
responsible for the control of the integrated IGBT.
The Schmitt-trigger input thresholds of them are
such to guarantee LSTTL and CMOS compatibility
down to 3.3V controller outputs. Pull-down resistor
of about 5k is internally provided to pre-bias inputs
during supply start-up and a zener clamp is
provided for pin protection purposes. Input Schmitttrigger and noise filter provide beneficial noise
rejection to short input pulses.
 5k
Figure 3: Input pin structure
The noise filter suppresses control pulses which are
below the filter time tFILIN. The filter acts according to
Figure 4.
Datasheet
Figure 4: Input filter timing diagram
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Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
It is recommended for proper work of CIPOS™ not
to provide input pulse-width lower than 1us.
The IC shuts down all the gate drivers’
outputs, when the VDD supply voltage is
VDDUV- = 10.4V. This prevents the external
switches from critically low gate voltage
during on-state and therefore from excessive
dissipation.
The integrated gate drive provides additionally a
shoot through prevention capability which avoids
the simultaneous on-state of two gate drivers of the
same leg (i.e. HO1 and LO1, HO2 and LO2, HO3
and LO3). When two inputs of a same leg are
activated, only former activated one is activated so
that the leg is kept steadily in a safe state.
VB(U,V,W) and VS(U,V,W) (High side supplies,
Pin 1 - 6)
VB to VS is the high side supply voltage. The high
side circuit can float with respect to VSS following
the external high side power device emitter voltage.
A minimum deadtime insertion of typically 380ns is
also provided by driver IC, in order to reduce crossconduction of the external power switches.
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
VFO (Fault-output and NTC, Pin 14)
The VFO pin indicates a module failure in case of
under voltage at pin VDD or in case of triggered
over current detection at ITRIP. A pull-up resistor is
externally required to bias the NTC.
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 12.1V and a
falling threshold of VBSUV- = 10.4V.
VS(U,V,W) provide a high robustness against
negative voltage in respect of VSS of -50V
transiently. This ensures very stable designs even
under rough conditions.
VDD
RON ,FLT
VFO
from ITRIP -Latch
>1
VSS
NW, NV, NU (Low side emitter, Pin 17 - 19)
The low side emitters are available for current
measurements of each phase leg. It is
recommended to keep the connection to pin VSS as
short as possible in order to avoid unnecessary
inductive voltage drops.
from uv -detection
Thermistor
power
below
power
levels
power
CIPOS™
Figure 5: Internal circuit at pin VFO
The same pin provides direct access to the NTC,
which is referenced to VSS. An external pull-up
resistor connected to +5V ensures, that the resulting
voltage can be directly connected to the
microcontroller.
W, V, U (High side emitter and low side collector,
Pin 20 - 22)
These pins are motor U, V, W input pins
P (Positive bus input voltage, Pin 23)
The high side IGBT are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 450 V.
ITRIP (Over current detection function, Pin 15)
CIPOS™ provides an over current detection
function by connecting the ITRIP input with the
motor current feedback. The ITRIP comparator
threshold (typ. 0.47V) is referenced to VSS ground.
An input noise filter (typ: tITRIPMIN = 530ns) prevents
the driver to detect false over-current events.
Over current detection generates a shut down of all
outputs of the gate driver after the shutdown
propagation delay of typically 1000ns.
The fault-clear time is set to typical 65us.
VDD, VSS (Low side control supply and
reference, Pin 13, 16)
VDD is the low side supply and it provides power
both to input logic and to low side output power
stage. Input logic is referenced to VSS ground.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1V is present.
Datasheet
6
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
Absolute Maximum Ratings
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Module Section
Description
Condition
Storage temperature range
Insulation test voltage
RMS, f = 60Hz, t =1min
Operating case temperature range
Refer to Figure 6
Symbol
Value
Unit
min
max
Tstg
-40
125
°C
VISOL
2000
-
V
TC
-40
100
°C
Inverter Section
Description
Condition
Symbol
Value
min
max
Unit
Max. blocking voltage
IC = 250µA
VCES
600
-
V
DC link supply voltage of P-N
Applied between P-N
VPN
-
450
V
DC link supply voltage (surge) of P-N
Applied between P-N
VPN(surge)
-
500
V
Output current
TC = 25°C, TJ < 150°C
TC = 80°C, TJ < 150°C
IC
-15
-10
15
10
A
less than 1ms
IC
-24
24
A
VDC ≤400V, TJ = 150°C
tSC
-
5
µs
Power dissipation per IGBT
Ptot
-
25.2
W
Operating junction temperature range
TJ
-40
150
°C
Single IGBT thermal resistance,
junction-case
RthJC
-
4.96
K/W
Single diode thermal resistance,
junction-case
RthJCD
-
5.41
K/W
Maximum peak output current
Short circuit withstand time
1
Control Section
Description
Condition
Value
min
max
Unit
Module supply voltage
VDD
-1
20
V
High side floating supply voltage
(VB vs. VS)
VBS
-1
20
V
VIN
VITRIP
-1
-1
10
10
V
fPWM
-
20
kHz
Input voltage
LIN, HIN, ITRIP
Switching frequency
1
Symbol
Allowed number of short circuits: <1000; time between short circuits: >1s.
Datasheet
7
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Description
Symbol
Value
min
typ
max
Unit
DC link supply voltage of P-N
VPN
0
-
450
V
High side floating supply voltage (VB vs. VS)
VBS
13.5
-
18.5
V
Low side supply voltage
VDD
14.5
16
18.5
V
Control supply variation
ΔVBS,
ΔVDD
-1
-1
-
1
1
V/µs
Logic input voltages LIN,HIN,ITRIP
VIN
VITRIP
0
0
-
5
5
V
Between VSS - N (including surge)
VSS
-5
-
5
V
Figure 6: TC measurement point2
2
Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and
brings wrong or different information.
Datasheet
8
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
Static Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Description
Condition
Symbol
min
typ
max
VCE(sat)
-
1.9
2.4
2.8
-
Iout = 10A
Collector-Emitter saturation voltage
TJ = 25°C
150°C
Value
Iout = -10A
Unit
V
Emitter-Collector forward voltage
TJ = 25°C
150°C
VF
-
1.75
1.8
2.4
Collector-Emitter leakage current
VCE = 600V
ICES
-
-
1
mA
Logic "1" input voltage (LIN,HIN)
VIH
-
2.1
2.5
V
Logic "0" input voltage (LIN,HIN)
VIL
0.7
0.9
-
V
ITRIP positive going threshold
VIT,TH+
400
470
540
mV
ITRIP input hysteresis
VIT,HYS
40
70
-
mV
VDD and VBS supply under voltage
positive going threshold
VDDUV+
VBSUV+
10.8
12.1
13.0
V
VDD and VBS supply under voltage
negative going threshold
VDDUVVBSUV-
9.5
10.4
11.2
V
VDD and VBS supply under voltage
lockout hysteresis
VDDUVH
VBSUVH
1.0
1.7
-
V
V
Input clamp voltage
(HIN, LIN, ITRIP)
Iin= 4mA
VINCLAMP
9.0
10.1
12.5
V
Quiescent VBx supply current
(VBx only)
HIN = 0V
IQBS
-
300
500
µA
Quiescent VDD supply current
(VDD only)
LIN = 0V, HINX=5V
IQDD
-
370
900
µA
Input bias current
VIN = 5V
IIN+
-
1
1.5
mA
Input bias current
VIN = 0V
IIN-
-
2
-
µA
ITRIP input bias current
VITRIP = 5V
IITRIP+
-
65
150
µA
VFO input bias current
VFO = 5V, VITRIP = 0V
IFO
-
60
-
µA
VFO output voltage
IFO = 10mA, VITRIP = 1V
VFO
-
0.5
-
V
Datasheet
9
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
Dynamic Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Description
Condition
Symbol
Turn-on propagation delay time
Turn-on rise time
VLIN,HIN = 5V; Iout = 10A,
VDC = 300V
Turn-on switching time
Reverse recovery time
Turn-off propagation delay time
VLIN,HIN = 0V; Iout = 10A,
VDC = 300V
Turn-off fall time
Turn-off switching time
Value
typ
max
ton
-
610
-
ns
tr
-
30
-
ns
tc(on)
100
ns
trr
115
ns
toff
-
790
-
ns
tf
-
65
-
ns
tc(off)
Short circuit propagation delay time
From VIT,TH+ to 10% ISC
Input filter time ITRIP
VITRIP = 1V
Input filter time at LIN, HIN for turn
on and off
VLIN,HIN = 0V & 5V
Fault clear time after ITRIP-fault
VITRIP = 1V
115
tSCP
Deadtime between low side and high
side
Unit
min
-
1440
ns
-
ns
tITRIPmin
530
ns
tFILIN
290
-
ns
tFLTCLR
40
65
200
µs
DTPWM
0.5
-
-
µs
Deadtime of gate drive circuit
DTIC
380
ns
IGBT turn-on energy (includes
reverse recovery of diode)
VDC = 300V, IC = 10A,
TJ = 25°C
150°C
Eon
-
235
340
-
µJ
IGBT turn-off energy
VDC = 300V, IC = 10A,
TJ = 25°C
150°C
Eoff
-
150
220
-
µJ
Diode recovery energy
VDC = 300V, IC = 10A,
TJ = 25°C
150°C
Erec
-
30
60
-
µJ
Bootstrap Parameters
(TJ = 25°C, if not stated otherwise)
Description
Condition
Symbol
Repetitive peak reverse
voltage
1
VRRM
Value
min
typ
600
max
Unit
V
RBS1
35
40
50
65

IF = 0.6A, di/dt = 80A/µs
trr_BS
50
ns
IF = 20mA, VS2 and VS3 = 0V
VF_BS
2.6
V
Bootstrap resistance of
U-phase1
VS2 or VS3= 300V, TJ = 25°C
VS2 and VS3 = 0V, TJ = 25°C
VS2 or VS3 = 300V, TJ = 125°C
VS2 and VS3 = 0V, TJ = 125°C
Reverse recovery time
Forward voltage drop
RBS2 and RBS3 have same values to RBS1.
Datasheet
10
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
Thermistor
Description
Condition
Resistor
Unit
min
typ
max
RNTC
-
85
-
k
B(25/100)
-
4092
-
K
TNTC = 25°C
B-constant of NTC
(Negative temperature coefficient)
Value
Symbol
35
3000
Min.
Typ.
Max.
30
2500
2000
1500
Thermistor resistance [kΩ ]
Thermistor resistance [kΩ ]
3500
25
20
15
10
1000
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
Thermistor temperature [℃]
500
0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor temperature [℃]
Figure 7: Thermistor resistance – temperature curve and table
(For more information, please refer to the application note ‘AN CIPOS-mini 1 Technical description’)
Mechanical Characteristics and Ratings
Description
Condition
Value
Unit
min
typ
max
Mounting torque
M3 screw and washer
0.59
0.69
0.78
Nm
Flatness
Refer to Figure 8
-50
-
100
µm
-
6.15
-
g
Weight
Figure 8: Flatness measurement position
Datasheet
11
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
Circuit of a Typical Application
Figure 9: Application circuit
Switching Times Definition
Figure 10: Switching times definition
Datasheet
12
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
Electrical characteristic
24
24
Ic, Collector - Emitter current [A]
18
16
14
12
10
V DD =15V
V DD =20V
8
6
4
2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V CE(sat), Collector - Emitter voltage [V]
Typ. Collector – Emitter saturation voltage
14
12
10
8
TJ=25℃
6
TJ=150 ℃
4
2
0.5
1.0
2.5
3.0
3.5
4.0
4.5
5.0
2.0
1.8
H igh side @ T J=25 ℃
1.6
H igh side @ T J=150 ℃
1.4
Low side @ T J=25 ℃
1.2
Low side @ T J=150 ℃
1.0
0.8
0.6
0.4
0.2
0
2
4
6
8
10
12
14
16
18
20
22
24
14
12
6
4
2
High side @ T J =150 ℃
Low side @ T J =150 ℃
65 0
60 0
High side @ T J =150 ℃
0.5
Low side @ T J=25 ℃
Low side @ T J=150 ℃
0.4
0.3
0.2
0.1
V D C =300V
V D D =15V
0
2
4
6
8
10
12
14
16
18
20
22
4
6
8
10
12
14
16
18
20
22
Low side @ T J=25 ℃
Low side @ T J=150 ℃
15 0
12 5
10 0
75
50
25
0
2
4
H igh side @ T J=150 ℃
35 0
Low side @ T J=25 ℃
Low side @ T J=150 ℃
30 0
25 0
20 0
15 0
10 0
0
2
4
6
8
10
12
14
16
18
20
22
H igh side @ T J=150 ℃
22 5
Low side @ T J =25 ℃
Low side @ T J =150 ℃
17 5
15 0
12 5
10 0
75
14
16
18
20
22
24
V D C =300V
V D D =15V
High side @ T J=25 ℃
High side @ T J=150 ℃
100 0
Low side @ T J=25 ℃
Low side @ T J=150 ℃
95 0
90 0
85 0
80 0
75 0
70 0
65 0
60 0
0
2
4
6
8
10
12
14
16
18
20
22
24
Ic, C ollector current [A]
Typ. Turn off propagation delay time
10
30 0
27 5
H igh side @ T J =25 ℃
25 0
H igh side @ T J =150 ℃
Low side @ T J =25 ℃
22 5
Low side @ T J =150 ℃
20 0
17 5
15 0
12 5
10 0
75
1
0 .1
D : d u ty ratio
D = 50%
D = 20%
D = 10%
D = 5%
D = 2%
S in g le p ulse
0 .0 1
1 E -3
thJC
25 0
12
50
Z
H igh side @ T J=25 ℃
10
105 0
24
V D C =300V
V D D =15V
32 5
trr, Reverse recovery time [ns]
27 5
8
110 0
Typ. Turn on switching time
30 0
6
115 0
35 0
20 0
High side @ T J =150 ℃
17 5
Typ. Reverse recovery energy loss
H igh side @ T J=25 ℃
40 0
Typ. Turn on propagation delay time
V D C =300V
V D D =15V
3.0
High side @ T J =25 ℃
20 0
Ic, C ollector current [A]
32 5
2.5
120 0
Ic, C ollector current [A]
35 0
2.0
Ic, C ollector current [A]
V D C =300V
V D D =15V
45 0
0
24
1.5
V D C =300V
V D D =15V
22 5
0
24
50
2
1.0
25 0
toff, Turn off propagation delay time [ns]
tc(on), Turn on switching time [ns]
High side @ T J =25 ℃
0
0.5
V F, Emitter - Collector voltage [V]
Typ. Emitter – Collector forward voltage
Typ. Turn off switching energy loss
Low side @ T J =25 ℃
70 0
TJ=150 ℃
8
0
0.0
50 0
75 0
TJ=25℃
10
Ic, C ollector current [A]
V D C =300V
V D D =15V
50
16
5.5
High side @ T J =25 ℃
0.0
80 0
55 0
18
Erec, Reverse recovery energy loss [uJ]
V D C =300V
V D D =15V
2.2
Typ. Turn on switching energy loss
ton, Turn on propagation delay time [ns]
2.0
V CE(sat), Collector - Emitter voltage [V]
Ic, C ollector current [A]
tc(off), Turn off switching time [ns]
1.5
20
0.6
Eoff, Turn off switching energy loss [mJ]
Eon, Turn on switching energy loss [mJ]
16
Typ. Collector – Emitter saturation voltage
2.4
0.0
18
0
0.0
5.5
22
20
, transient thermal resistance [K/W]
Ic, Collector - Emitter current [A]
20
0
0.0
24
V DD =15V
22
IF, Emitter - Collector current [A]
TJ=25 ℃
22
25
0
2
4
6
8
10
12
14
16
18
20
Ic, C ollector current [A]
Typ. Turn off switching time
Datasheet
22
24
0
0
2
4
6
8
10
12
14
16
18
20
Ic, C ollector current [A]
Typ. Reverse recovery time
13
22
24
1 E -4
1 E -7
1 E -6
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
t P , P u ls e w id th [s e c .]
1
10
100
IGBT transient thermal resistance at all six
IGBTs operation
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
Package Outline
Datasheet
14
Ver. 1.2, 2014-06-01
CIPOS™ IKCM15H60GA
Revision History
Previous Version:
Datasheet Ver. 1.1
Major changes since the last revision
Page or Reference
8
14
Datasheet
Description of change
Figure 6 updated
Package Outline updated
15
Ver. 1.2, 2014-06-01
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™,
DI-POL™, DrBLADE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™,
HybridPACK™, ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™,
POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™,
SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™
of ARM Limited, UK. ANSI™ of American National Standards Institute. AUTOSAR™ of AUTOSAR development partnership. Bluetooth™ of Bluetooth
SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of
Epcos AG. FLEXGO™ of Microsoft Corporation. HYPERTERMINAL™ of Hilgraeve Incorporated. MCS™ of Intel Corp. IEC™ of Commission
Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE
OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ of Openwave Systems Inc. RED HAT™
of Red Hat, Inc. RFMD™ of RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of
Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of
Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design
Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex.
Last Trademarks Update 2014-07-17
www.Infineon.com
Edition 2014-06-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015.
All Rights Reserved.
IMPORTANT NOTICE
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(“Beschaffenheitsgarantie”). With respect to any examples, hints
or any typical values stated herein and/or any information
regarding the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind,
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application.
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contact your nearest Infineon Technologies office.
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