Roithner LED17FC-PR-WIN Mid-infrared light emitting diode Datasheet

LED17FC-PR-WIN
TECHNICAL DATA
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Light Emitting Diodes with central wavelength 1.75 µm series are based on heterostructures grown
on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap
solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
LED17FC-PR-WIN has a stable ouput power and a lifetime more then 80000 hours.
Features
•
•
•
•
Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design
Peak Wavelength: typ. 1.75 µm
Optical Ouput Power: typ. 1.2 mW qCW
Package: TO-18, with PR and window
Specifications
T=300 K
150 mA CW
Min.
1.70
100
Rating
Typ.
1.75
150
Max.
1.79
200
200 mA qCW
0.8
1.2
2
mW
1A
20
30
40
mW
T=300 K
200 mA qCW
10
20
30
ns
V
Item
Condition
Peak Wavelength
FWHM
Quasi-CW
Optical Power
Pulsed
Optical Power
Switching Time
Operation Voltage
Operating
Temperature
Emitting Area
Soldering
Temperature
Package
Unit
µm
nm
-240 … +50
°C
670x770
µm
180
°C
TO-18, with parabolic reflector and
quartz window
(Unit: mm)
Operating Regime
Quasi-CW
•
•
Maximum current 220 mA
Recommended current 150-200mA
Pulsed
•
06.10.2010
LED17FC-PR-WIN
Maximum current 1 A
(puls lenght 500 ns, repetition rate 2kHz)
1 of 2
Typical Performance Curves
06.10.2010
LED17FC-PR-WIN
2 of 2
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