Fairchild FDP8442 F085 N-channel powertrench mosfet Datasheet

FDP8442_F085
N-Channel PowerTrench® MOSFET
40V, 80A, 3.1mΩ
Applications
„ Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A
„ Automotive Engine Control
„ Typ Qg(10) = 181nC at VGS = 10V
„ Powertrain Management
„ Low Miller Charge
„ Solenoid and Motor Drivers
„ Low Qrr Body Diode
„ Electronic Steering
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Integrated Starter / Alternator
„ Qualified to AEC Q101
„ Distributed Power Architectures and VRMs
„ RoHS Compliant
„ Primary Switch for 12V Systems
A
REE I
DF
M ENTATIO
LE
N
MP
LE
Features
©2010 Fairchild Semiconductor Corporation
FDP8442_F085 Rev. A1
1
www.fairchildsemi.com
FDP8442_F085 N-Channel PowerTrench® MOSFET
May 2010
Symbol
Drain to Source Voltage
VDSS
VGS
ID
Parameter
Ratings
40
Units
V
Gate to Source Voltage
±20
V
Drain Current Continuous (TC<158oC, VGS = 10V)
80
Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
23
Pulsed
EAS
PD
A
See Figure 4
Single Pulse Avalanche Energy
(Note 1)
720
mJ
Power Dissipation
254
W
Derate above 25oC
1.7
W/oC
-55 to +175
oC
0.59
oC/W
62
oC/W
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
(Note 2)
Package Marking and Ordering Information
Device Marking
FDP8442
Device
FDP8442_F085
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
Off Characteristics
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
IDSS
Zero Gate Voltage Drain Current
VDS = 32V
VGS = 0V
IGSS
Gate to Source Leakage Current
BVDSS
40
-
-
-
-
1
-
-
250
VGS = ±20V
-
-
±100
nA
V
TJ = 150°C
FDP8442_F085 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
µA
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VDS = VGS, ID = 250µA
2
2.9
4
ID = 80A, VGS = 10V
-
2.3
3.1
ID = 80A, VGS = 10V,
TJ = 175°C
-
3.9
5.3
mΩ
VDS = 25V, VGS = 0V,
f = 1MHz
-
12200
-
pF
-
1040
-
pF
-
640
-
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VGS = 0.5V, f = 1MHz
-
1.0
-
Ω
Qg(TOT)
Total Gate Charge at 10V
VGS = 0 to 10V
-
181
235
nC
Qg(TH)
Threshold Gate Charge
VGS = 0 to 2V
-
23
30
nC
Qgs
Gate to Source Gate Charge
-
49
-
nC
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
FDP8442_F085 Rev. A1
2
VDD = 20V
ID = 80A
Ig = 1mA
-
26
-
nC
-
41
-
nC
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Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
Turn-On Time
-
-
62
ns
td(on)
Turn-On Delay Time
-
19.5
-
ns
-
19.3
-
ns
-
57
-
ns
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
-
17.2
-
ns
toff
Turn-Off Time
-
-
118
ns
ISD = 80A
-
0.9
1.25
V
ISD = 40A
-
0.8
1.0
V
VDD = 20V, ID = 80A
VGS = 10V, RGS = 2Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
IF = 75A, di/dt = 100A/µs
-
49
64
ns
Qrr
Reverse Recovery Charge
IF = 75A, di/dt = 100A/µs
-
70
91
nC
Notes:
1: Starting TJ = 25oC, L = 0.35mH, IAS = 64A
2: Pulse width = 100s.
FDP8442_F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDP8442_F085 Rev. A1
3
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300
1.0
250
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULIPLIER
1.2
0.8
0.6
0.4
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
200
150
100
2
1
0
25
175
Figure 1. Normalized Power Dissipation vs Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
VGS = 10V
50
0.2
0.0
CURRENT LIMITED
BY PACKAGE
50
75
100
TC, CASE
125
150
175
TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
FDP8442_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
1E-3
-5
10
-4
-3
10
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
IDM, PEAK CURRENT (A)
VGS = 10V
TC = 25oC
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
175 - TC
I = I25
150
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 4. Peak Current Capability
FDP8442_F085 Rev. A1
4
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500
ID, DRAIN CURRENT (A)
1000
10us
100us
100
10
LIMITED
BY PACKAGE
1ms
1
0.1
IAS, AVALANCHE CURRENT (A)
4000
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
o
TC = 25 C
10ms
100
o
STARTING TJ = 25 C
10
o
STARTING TJ = 150 C
1
0.01
DC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
1000 5000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
160
Figure 6. Unclamped Inductive Switching
Capability
VDD = 5V
120
TJ = 175oC
80
TJ = 25oC
TJ = -55oC
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 5V
120
FDP8442_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
VGS = 4.5V
80
40
VGS = 4V
0
2.0
2.5
3.0
3.5
4.0
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
0
5.0
Figure 7. Transfer Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40
TJ = 175oC
20
TJ = 25oC
10
0
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
FDP8442_F085 Rev. A1
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 8. Saturation Characteristics
50
30
0
1.8
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5
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NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
VGS = VDS
ID = 250µA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
CAPACITANCE (pF)
Ciss
10000
Coss
Crss
f = 1MHz
VGS = 0V
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
FDP8442_F085 Rev. A1
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
200
50
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
40000
100
0.1
ID = 250µA
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1000
1.10
10
ID = 80A
8
VDD = 15V
VDD = 20V
6
FDP8442_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
VDD = 25V
4
2
0
0
50
100
150
Qg, GATE CHARGE(nC)
200
Figure 14. Gate Charge vs Gate to Source Voltage
6
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Datasheet contains the design specifications for product development. Specifications may change in
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Rev. I48
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FDP8442_F085 N-Channel PowerTrench® MOSFET
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