DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD714 750 MHz, 20.3 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 29 2001 Nov 02 Philips Semiconductors Product specification 750 MHz, 20.3 dB gain power doubler amplifier FEATURES BGD714 PINNING - SOT115J • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 • Excellent return loss properties input 2, 3 • Silicon nitride passivation common 5 • Rugged construction +VB 7, 8 • Gold metallization ensures excellent reliability. common 9 output APPLICATIONS handbook, halfpage • CATV systems operating in the 40 to 750 MHz frequency range. 1 2 3 5 7 8 9 DESCRIPTION Side view Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER CONDITIONS power gain total current consumption (DC) MIN. MAX. UNIT f = 45 MHz 20 20.6 dB f = 750 MHz 20.8 21.8 dB VB = 24 V 380 410 mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VB supply voltage − 30 Vi RF input voltage − 70 dBmV Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −20 +100 °C 2001 Nov 02 2 V Philips Semiconductors Product specification 750 MHz, 20.3 dB gain power doubler amplifier BGD714 CHARACTERISTICS Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 45 MHz 20 20.3 20.6 dB f = 750 MHz 20.8 21.3 21.8 dB dB SL slope straight line f = 45 to 100 MHz; note 1 0.5 1 1.5 FL flatness straight line f = 45 to 100 MHz − − ±0.35 dB f = 100 to 700 MHz − − ±0.5 dB f = 700 to 750 MHz − − ±0.15 dB S11 S22 input return losses output return losses f = 45 to 80 MHz 23 − − dB f = 80 to 160 MHz 23 − − dB f = 160 to 320 MHz 21 − − dB f = 320 to 550 MHz 20 − − dB f = 550 to 650 MHz 20 − − dB f = 650 to 750 MHz 19 − − dB f = 750 to 790 MHz 17 − − dB f = 45 to 80 MHz 23 − − dB f = 80 to 160 MHz 23 − − dB f = 160 to 320 MHz 20 − − dB f = 320 to 550 MHz 20 − − dB f = 550 to 650 MHz 20 − − dB f = 650 to 750 MHz 19 − − dB f = 750 to 790 MHz 17 − − dB S21 phase response f = 50 MHz −45 − +45 deg CTB composite triple beat 112 channels flat; Vo = 44 dBmV; fm = 745.25 MHz − − −61 dB Xmod cross modulation 2001 Nov 02 79 channels; Vo = 44 dBmV; fm = 547.25 MHz − − −67 dB 79 channels; fm = 445.25 MHz; Vo = 49.3 dBmV at 547 MHz; note 2 − − −62 dB 112 channels flat; Vo = 44 dBmV; fm = 55.25 MHz − − −62 dB 79 channels flat; Vo = 44 dBmV; fm = 55.25 MHz − − −66 dB 79 channels; fm = 745.25 MHz; Vo = 49.3 dBmV at 547 MHz; note 2 − − −58 dB 3 Philips Semiconductors Product specification 750 MHz, 20.3 dB gain power doubler amplifier SYMBOL CSO PARAMETER composite second order distortion CONDITIONS BGD714 MIN. TYP. MAX. UNIT 112 channels flat; Vo = 44 dBmV; fm = 746.5 MHz − − −62 dB 79 channels flat; Vo = 44 dBmV; fm = 548.5 MHz − − −67 dB 79 channels; fm = 746.5 MHz; Vo = 49.3 dBmV at 547 MHz; note 2 − − −60 dB − − −74 dB d2 second order distortion note 3 Vo output voltage dim = −60 dB; note 4 64 − − dBmV NF noise figure f = 50 MHz − − 5.5 dB f = 550 MHz − − 5.5 dB f = 750 MHz − − 7 dB note 5 380 395 410 mA Itot total current consumption (DC) Notes 1. Slope straight line is defined as gain at 750 MHz − gain at 45 MHz. 2. Tilt = 7.3 dB (55 to 547 MHz). 3. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. 4. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 738.25 MHz. 5. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 2001 Nov 02 4 Philips Semiconductors Product specification 750 MHz, 20.3 dB gain power doubler amplifier MCD845 −50 (dB) 52 −60 −70 (2) 48 (3) (4) −70 −80 44 −80 40 800 −90 −90 0 200 400 600 f (MHz) Vo (dBmV) Xmod (1) −60 56 handbook, halfpage Vo (dBmV) CTB (dB) MCD846 −50 56 handbook, halfpage BGD714 (2) 52 (3) (4) (1) 48 44 0 200 400 ZS = ZL = 75 Ω; VB = 24 V; 79 channels; tilt = 7.3 dB (50 to 550 MHz). ZS = ZL = 75 Ω; VB = 24 V; 79 channels; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 σ. (1) Vo. (2) Typ. +3 σ. Fig.2 (3) Typ. (4) Typ. −3 σ. Composite triple beat as a function of frequency under tilted conditions. Fig.3 MCD847 −50 56 handbook, halfpage Vo (dBmV) CSO (dB) (1) −60 (2) 52 (3) −70 48 (4) −80 −90 44 0 200 400 600 f (MHz) 40 800 ZS = ZL = 75 Ω; VB = 24 V; 79 channels; tilt = 7.3 dB (50 to 550 MHz). (1) Vo. (2) Typ. +3 σ. Fig.4 (3) Typ. (4) Typ. −3 σ. Composite second order distortion as a function of frequency under tilted conditions. 2001 Nov 02 5 600 f (MHz) 40 800 (3) Typ. (4) Typ. −3 σ. Cross modulation as a function of frequency under tilted conditions. Philips Semiconductors Product specification 750 MHz, 20.3 dB gain power doubler amplifier BGD714 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 L min. p Q max. 8.8 4.15 3.85 2.4 REFERENCES IEC JEDEC EIAJ q1 q2 38.1 25.4 10.2 S U1 U2 max. 4.2 44.75 8 EUROPEAN PROJECTION W w 6-32 0.25 UNC y Z max. 0.1 3.8 ISSUE DATE 99-02-06 SOT115J 2001 Nov 02 q 6 Philips Semiconductors Product specification 750 MHz, 20.3 dB gain power doubler amplifier BGD714 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Nov 02 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/04/pp8 Date of release: 2001 Nov 02 Document order number: 9397 750 09029