CYStech Electronics Corp. Spec. No. : C134N3 Issued Date : 2016.07.20 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET BSS123KN3 BVDSS ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=120mA RDS(ON)@VGS=4.5V, ID=100mA 100V 0.26A 2.13Ω(typ) 2.24Ω(typ) Features • High ESD • High speed switching • Pb-free lead plating and halogen-free package Symbol • Easily designed drive circuits • Low-voltage drive • Easy to use in parallel Outline SOT-23 BSS123KN3 D D G S G：Gate S：Source D：Drain S G Ordering Information Device BSS123KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name BSS123KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C134N3 Issued Date : 2016.07.20 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=25°C Pulsed Drain Current Total Power Dissipation ESD susceptibility Operating Junction Temperature Range Storage Temperature Range Symbol VDSS VGSS ID IDM PD VESD Tj Tstg Limits 100 ±20 260 208 1040 300 1200 -55~+150 -55~+150 Unit V mA *1 *2 *3 mW V °C Thermal Characteristics Parameter Thermal Resistance, Junction to Ambient Symbol RθJA Value 416 *2 Unit °C/W Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch *3. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Static BVDSS* VGS(th) IGSS IDSS RDS(ON)* GFS Dynamic Ciss Coss Crss *tr *td *tstg *tf *Qg *Qgs *Qgd Body Diode *VSD Min. Typ. Max. 100 0.8 200 2.13 2.24 - 2.5 ±10 1 5 4.3 5.6 - - 37 15.3 2.6 2.4 2.6 7 4.4 1.86 0.31 0.42 56 23 5 3.6 3.9 10.5 6.6 2.8 0.47 0.63 - 0.85 1.3 Unit Test Conditions mS VGS=0V, ID=250μA VDS=VGS, ID=250μA VGS=±16V, VDS=0V VDS=80V, VGS=0V VDS=100V, VGS=0V, Tj=55°C ID=120mA, VGS=10V ID=100mA, VGS=4.5V VDS=15V, ID=100mA pF VDS=25V, VGS=0V, f=1MHz ns VDS=50V, ID=0.26A, VGS=10V, RG=6Ω nC VDS=80V, ID=0.26A, VGS=10V V IS=0.34A V μA Ω *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% BSS123KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C134N3 Issued Date : 2016.07.20 Revised Date : Page No. : 3/9 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 1.0 BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current (A) 0.9 0.8 0.7 10V, 9V,8V,7V,6V,5V,4V,3.5V 0.6 0.5 3V 0.4 0.3 0.2 VGS=2.5V 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.1 0.4 0.0 0 1 2 3 4 5 6 7 8 9 -75 -50 -25 10 VDS, Drain-Source Voltage(V) Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 10 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(Ω) 1.2 VGS=4.5V VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 VGS=10V 1 0.2 0.01 0.1 ID, Drain Current(A) 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 IDR , Reverse Drain Current(A) 1 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 9 R DS(on), Normalized Static DrainSource On-State Resistance 10 R DS(on), Static Drain-Source OnState Resistance(Ω) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=120mA 8 7 6 5 4 3 2 2 VGS=10V, ID=120mA RDS(ON) @Tj=25°C:2.13Ω typ. 1.6 1.2 0.8 VGS=4.5V, ID=100mA RDS(ON) @Tj=25°C : 2.24Ω typ. 0.4 1 0 0 0 BSS123KN3 2 4 6 VGS, Gate-Source Voltage(V) 8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C134N3 Issued Date : 2016.07.20 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 100 Capacitance---(pF) Ciss C oss 10 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 1 0 5 10 15 20 VDS, Drain-Source Voltage(V) 25 -75 -50 -25 30 50 75 100 125 150 175 Gate Charge Characteristics 1 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 0.1 VDS=10V Ta=25°C Pulsed 4 0.01 0.1 ID, Drain Current(A) 2 1/5 2/5 3/5 4/5 1 1 1 1 1/5 2/5 3/5 4/5 Qg, Total Gate Charge(nC) 1 1 2 Maximum Drain Current vs Junction Temperature ID, Maximum Drain Current(A) RDSON Limited 100μs 1ms 10ms TA=25°C, Tj=150°C VGS=10V, RθJA=416°C/W Single Pulse 100ms 1s DC 0.25 0.2 0.15 0.1 0.05 TA=25°C, VGS=10V, RθJA=416°C/W 0 0.001 BSS123KN3 ID=0.26A 0.3 0.1 0.01 VDS=80V 0 10 0.01 VDS=20V 6 Maximum Safe Operating Area 1 VDS=50V 8 0 0.01 0.001 ID, Drain Current(A) 0 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C134N3 Issued Date : 2016.07.20 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Typical Transfer Characteristics 1 50 45 0.8 TJ(MAX) =150°C TA=25°C RθJA=416°C/W 40 35 Power (W) ID, Drain Current(A) VDS=10V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.6 0.4 30 25 20 15 0.2 10 5 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 1000 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=416°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) BSS123KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C134N3 Issued Date : 2016.07.20 Revised Date : Page No. : 6/9 Recommended Soldering Footprint BSS123KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C134N3 Issued Date : 2016.07.20 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension BSS123KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C134N3 Issued Date : 2016.07.20 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BSS123KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C134N3 Issued Date : 2016.07.20 Revised Date : Page No. : 9/9 SOT-23 Dimension Device Code Date Code 123K XX Marking: 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Gate 2.Source 3.Drain *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BSS123KN3 CYStek Product Specification