HOTTECH HEA1213 General purpose transistor Datasheet

HEA1213 (PNP)
GENERAL PURPOSE TRANSISTOR
REPLACEMENT TYPE :2SA1213
FEATURES

Complementary to HEC2873

Small Flat Package

Power Amplifier and Switching Applications

Low Saturation Voltage

High Speed Switching Time
SOT-89
1:BASE
MAXIMUMRATINGS (T A = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current-Continuous
IC
-2
A
Collector Power Dissipation
PC
500
mW
Thermal Resistance From Junction to Ambient
RΘJA
250
°C/W
JunctionTemperature
TJ
150
°C
StorageTemperature
Tstg
-55~+150
°C
2:COLLECTOR
3:EMITTER
ELECTRICAL CHARACTERISTICS(T A=25°C unless otherwise noted)
Parameter
Symbol
Test conditions
Collector-Base Breakdown Voltage
VCBO
IC=-0.1mA , IE =0
-50
V
Collector-Emitter Breakdown Voltage
VCEO
IC=-10mA , IB=0
-50
V
Emitter-Base Breakdown Voltage
VEBO
IE=-0.1mA , IC=0
-5
V
Collector Cut-off Current
ICBO
VCB=-50V ,IE=0
-100
nA
Emitter Cut-off Current
IEBO
VEB=-5V , IC=0
-100
nA
hFE(1)
VCE=-2V , IC=-500mA
70
hFE(2)
VCE=-2V , IC=-2A
20
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-1A , IB=-50mA
-0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=-1A , IB=-50mA
1.2
V
Out Put Capacitance
COB
VCB=-10V,IE=0,f=1MHz
Transition Frequency
fT
VCE=-2V , IC=-0.5A
DC Current Gain
Min
Typ
Max
Unit
240
40
100
pF
MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
O
Y
70-140
120-240
NO
NY
E-mail:[email protected]
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HEA1213 (PNP)
GENERAL PURPOSE TRANSISTOR
Typical Characteristics
Static Characteristic
hFE
-1000
COMMON
EMITTER
Ta=25 ℃
-5.4mA
-800
——
IC
COMMON EMITTER
VCE=-2V
-4.2mA
300
-3mA
-2.4mA
-400
-1.8mA
-1.2mA
-200
Ta=100 ℃
hFE
-3.6mA
-600
DC CURRENT GAIN
COLLECTOR CURRENT
1000
-4.8mA
IC
(mA)
-6mA
Ta=25 ℃
100
30
IB=-600uA
-0
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
COLLECTOR-EMITTER VOLTAGE
VCE
-3.0
-3.5
10
-1
(V)
-3
-10
-100
-30
COLLECTOR CURRENT
VBEsat
——
IC
VCEsat
-1000
-1000
COLLECTOR-EMMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMMITTER SATURATION
VOLTAGE VBEsat (mV)
Ta=25 ℃
Ta=100 ℃
β=20
-200
-1
-10
-3
IC
——
-300
-100
-30
COLLECTOR CURRENT
IC
-1000
——
IC
-100
Ta=100 ℃
-30
Ta=25 ℃
-10
-1
(mA)
-30
-10
VBE
Cob/Cib
——
-300
-100
COLLECTOR CURRENT
1000
IC
-1000
(mA)
VCB/VEB
f=1MHz
IE=0/IC=0
(mA)
-300
Ta=25 ℃
300
(pF)
-100
Cib
C
Ta=100 ℃
-30
CAPACITANCE
IC
-2000
(mA)
-300
-1000
COLLECTOR CURRENT
-1000
-500
IC
Ta=25 ℃
-10
100
Cob
30
-3
-1
-0.0
VCE=-2V
-0.2
-0.4
-0.6
BASE-EMITTER VOLTAGE
PC
——
-0.8
VBE
-1.0
(V)
10
-0.1
-1
-0.3
-10
-3
REVERSE VOLTAGE
V
-20
(V)
Ta
COLLECTOR POWER DISSIPATION
PC (mW)
600
500
400
300
200
100
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:[email protected]
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HEA1213 (PNP)
GENERAL PURPOSE TRANSISTOR
SOT-89 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
1.400
1.600
0.055
0.063
b
0.320
0.520
0.013
0.020
b1
0.400
0.580
0.016
0.023
c
0.350
0.440
0.014
0.017
D
4.400
4.600
0.173
0.181
D1
1.550REF.
0.061REF.
E
2.300
2.600
0.091
0.102
E1
3.940
4.250
0.155
0.167
e
1.500TYP.
0.060TYP.
e1
3.000TYP.
0.118TYP.
L
0.900
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
1.200
0.035
E-mail:[email protected]
0.047
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HEA1213 (PNP)
GENERAL PURPOSE TRANSISTOR
SOT-89 Tape and Reel
DIMENSIONSAREINMILLIMETER
TYPE
A
B
C
SOT-89
4.85
4.45
1.85
TOLERANCE
±0.1
±0.1
±0.1
d
1.50
±0.1
E
F
P0
P
P1
W
1.75
5.50
4.00
8.00
2.00
12.00
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
SOT-89 Tape Leader and Trailer
Leader Tape
Components
Empty pockets
Empty pockets
SOT-89 Reel
DIMNSIONSAREINMILLIMETERE
REELOPTION
D
7’’ DIA
180
TOLERANCE
±2
D1
60.00
±1
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
D2
R32.00
±1
G
H
R86.50
±1
R30.00
±1
E-mail:[email protected]
I
13.00
±1
W1
W2
13.20
16.50
±1
±1
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