IPDD60R125G7 MOSFET 600VCoolMOS™G7PowerTransistor PG-HDSOP-10-1 TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand theimprovedthermalpropertiesoftheDDPAKpackagetoenablea possibleSMDsolutionforhighcurrenttopologiessuchasPFCupto3kW. 10 9 Pin 1 Features •C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg. •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint. •DDPAKpackagehasinbuilt4thpinKelvinSourceconfigurationandlow parasiticsourceinductance(~3nH). •DDPAKpackageisMSL1compliant,totalPb-free,haseasyvisual inspectionleadsandisqualifiedforindustrialapplicationsaccordingto JEDEC47/20/22. •DDPAKSMDpackagecombinedwithleadfreedieattachprocess enablesimprovedthermalperformance(Rth). 2 3 4 8 7 6 5 Drain Pin 6-10 Gate Pin 1 Driver Source Pin 2 Benefits Power Source Pin 3,4,5 •C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venabling fasterswitchingleadingtohigherefficiency. •PossibilitytoincreasseeconomiesofscalesbyusageinPFCandPWM topologiesintheapplication. •C7Goldcanreach50mΩinDDPAK115mm2footprint,whereasprevious BICC7600Vwas40mΩin150mm2D2PAKfootprint. •ReducingparasiticsourceinductancebyKelvinSourceimproves efficiencybyfasterswitchingandeaseofuseduetolessringing. •DDPAKpackageiseasytouseandhasthehighestqualitystandards. •ImprovedthermalsenableSMDDDPAKpackagetobeusedinhigher currentdesignsthanhasbeenpreviouslypossible. Potentialapplications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS@Tj,max 650 V RDS(on),max 125 mΩ Qg,typ 27 nC ID,pulse 54 A ID,continuous @ Tj<150°C 27 A Eoss@400V 3.27 µJ Body diode di/dt 720 A/µs Type/OrderingCode Package IPDD60R125G7 PG-HDSOP-10 Final Data Sheet Marking 60R125G7 1 RelatedLinks see Appendix A Rev.2.0,2018-01-05 600VCoolMOS™G7PowerTransistor IPDD60R125G7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2018-01-05 600VCoolMOS™G7PowerTransistor IPDD60R125G7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 20 12 A TC=25°C TC=100°C - 54 A TC=25°C - - 64 mJ ID=3.8A; VDD=50V; see table 10 EAR - - 0.32 mJ ID=3.8A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 3.8 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 120 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - n.a. Ncm - IS - - 20 A TC=25°C Diode pulse current IS,pulse - - 54 A TC=25°C Reverse diode dv/dt3) dv/dt - - 25 V/ns VDS=0...400V,ISD<=5.9A,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 720 A/µs VDS=0...400V,ISD<=5.9A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj,max Pulse width tp limited by Tj,max 3) Identical low side and high side switch 2) Final Data Sheet 3 Rev.2.0,2018-01-05 600VCoolMOS™G7PowerTransistor IPDD60R125G7 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 1.04 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA for SMD version - 35 45 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area °C/W for drain connection and cooling. PCB is vertical without air stream cooling. Tsold - - 260 °C Reflow soldering temperature Final Data Sheet 4 reflow MSL1 Rev.2.0,2018-01-05 600VCoolMOS™G7PowerTransistor IPDD60R125G7 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.5 4 V VDS=VGS,ID=0.32mA - 10 1 - µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.108 0.269 0.125 - Ω VGS=10V,ID=6.4A,Tj=25°C VGS=10V,ID=6.4A,Tj=150°C Gate resistance RG - 0.8 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1080 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 22 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 41 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 420 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 18 - ns VDD=400V,VGS=13V,ID=6.4A, RG=10Ω;seetable9 Rise time tr - 5 - ns VDD=400V,VGS=13V,ID=6.4A, RG=10Ω;seetable9 Turn-off delay time td(off) - 60 - ns VDD=400V,VGS=13V,ID=6.4A, RG=10Ω;seetable9 Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=6.4A, RG=10Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 5 - nC VDD=400V,ID=6.4A,VGS=0to10V Gate to drain charge Qgd - 10 - nC VDD=400V,ID=6.4A,VGS=0to10V Gate charge total Qg - 27 - nC VDD=400V,ID=6.4A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=6.4A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.0,2018-01-05 600VCoolMOS™G7PowerTransistor IPDD60R125G7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=6.4A,Tj=25°C 280 - ns VR=400V,IF=6.4A,diF/dt=100A/µs; see table 8 - 2.8 - µC VR=400V,IF=6.4A,diF/dt=100A/µs; see table 8 - 20 - A VR=400V,IF=6.4A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.8 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2018-01-05 600VCoolMOS™G7PowerTransistor IPDD60R125G7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 130 10 µs 100 µs 120 1 µs 1 ms 110 10 ms 101 100 DC 90 100 70 ID[A] Ptot[W] 80 60 10-1 50 40 30 10-2 20 10 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 10 100 µs 10 µs 101 1 µs 1 ms 10 ms 101 DC 100 0.5 ID[A] ZthJC[K/W] 100 10-1 0.2 0.1 10-1 10-2 10-3 0.05 0.02 0.01 single pulse 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2018-01-05 600VCoolMOS™G7PowerTransistor IPDD60R125G7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 100 45 20 V 10 V 90 20 V 10 V 8V 7V 40 8V 80 6V 35 7V 70 30 5.5 V ID[A] ID[A] 60 50 25 20 40 5V 6V 15 20 5.5 V 10 10 5V 30 4.5 V 5 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.48 5.5 V 6V 0.30 7V 6.5 V 0.28 10 V 0.46 0.26 20 V 0.44 0.24 0.42 0.22 RDS(on)[Ω] RDS(on)[Ω] 0.40 0.38 0.36 0.34 0.20 0.18 98% 0.16 0.14 0.32 typ 0.12 0.30 0.10 0.28 0.08 0.26 20 VDS[V] 0 10 20 30 40 50 60 0.06 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=6.4A;VGS=10V 8 Rev.2.0,2018-01-05 600VCoolMOS™G7PowerTransistor IPDD60R125G7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 100 12 90 25 °C 10 80 70 120 V 400 V 8 VGS[V] ID[A] 60 50 40 6 150 °C 4 30 20 2 10 0 0 2 4 6 8 10 0 12 0 5 10 VGS[V] 15 20 25 30 35 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=6.4Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 70 60 50 101 125 °C IF[A] EAS[mJ] 25 °C 40 30 100 20 10 10-1 0.0 0.5 1.0 1.5 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=3.8A;VDD=50V 9 Rev.2.0,2018-01-05 600VCoolMOS™G7PowerTransistor IPDD60R125G7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 700 680 104 660 Ciss 103 C[pF] VBR(DSS)[V] 640 620 102 Coss 600 101 580 Crss 10 0 560 540 -60 -20 20 60 100 140 180 10-1 0 100 200 Tj[°C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 4.5 4.0 3.5 Eoss[µJ] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2018-01-05 600VCoolMOS™G7PowerTransistor IPDD60R125G7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2018-01-05 600VCoolMOS™G7PowerTransistor IPDD60R125G7 6PackageOutlines PG-HDSOP-10-1 DOCUMENT NO. Z8B00184263 DIMENSIONS A A1 A2 b b2 c D D1 E E1 e N H L Figure 1 Final Data Sheet REVISION 01 MILLIMETERS MIN. MAX. 2.20 2.35 0.00 0.15 0.89 1.10 0.57 0.63 0.57 0.93 0.46 0.58 15.20 15.60 10.50 10.70 6.40 6.60 5.20 5.50 1.14 10 20.81 21.11 1.20 1.40 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 06.02.2017 Outline PG-HDSOP-10, dimensions in mm/inches 12 Rev.2.0,2018-01-05 600V CoolMOS™ G7 Power Transistor IPDD60R125G7 7 Appendix A Table 11 Related Links • IFX CoolMOS TM G7 Webpage: www.infineon.com • IFX CoolMOS TM G7 application note: www.infineon.com • IFX CoolMOS TM G7 simulation model: www.infineon.com • IFX Design tools: www.infineon.com Final Data Sheet 13 Rev. 2.0, 2018-01-05 600V CoolMOS™ G7 Power Transistor IPDD60R125G7 Revision History IPDD60R125G7 Revision: 2018-01-05, Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-01-05 Release of final version Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™, ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. 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If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 14 Rev. 2.0, 2018-01-05