Diodes SMD Type Switching Diodes BAW56 (KAW56) SOT-23-3 Unit: mm Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Small plastic SMD package. +0.2 1.6 -0.1 +0.2 2.8 -0.1 High switching sped: max.4 ns. 1 0.55 Repetitive peak forward current: max.450 mA. 2 +0.02 0.15 -0.02 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRRM 85 V Continuous reverse voltage VR 75 V Continuous forward current(single diode loaded *) ---------------------------------(double diode loaded *) IF 215 125 mA IFRM 450 mA Repetitive peak reverse voltage Repetitive peak forward current t=1 s Non-repetitive peak forward current Tj=25 t=1ms 4 IFSM A 1 t=1s power dissipation * 0.5 PD 250 mW Thermal resistance from junction to tie-point Rth j-tp 360 K/W Thermal resistance from junction to ambient * Rth j-a 500 K/W Tj 150 Tstg -65 to +150 Junction Temperature Storage Temperature Range +0.1 0.68 -0.1 1.1 +0.2 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 * Device mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Symbol Parameter Forward voltage VF IR Reverse current Max Unit IF =1 mA 715 mV Test conditions IF =10 mA 855 mV IF =50 mA 1 V IF =150 mA 1.25 V VR =75 V 1 VR =25 V; Tj= 150 30 VR =75 V; Tj= 150 50 1.5 pF 4 nS 1.75 V Diode capacitance Cd VR =0 V, f= 1 MHz Reverse recovery time trr when switched from IF= 10 mA to IR=10mA;RL=100 ; measured at IR= 1mA Forward recovery voltage Vfr IF = 10 mA, tr= 20 ns A ■ Marking Marking A1* www.kexin.com.cn 1 Diodes SMD Type BAW56 (KAW56) Typical Characteristics 300 300 handbook, halfpage IF (mA) IF (mA) 200 single diode loaded double diode loaded 100 0 0 100 T amb ( oC) (2) (3) 100 0 200 0 1 VF (V) 2 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 (1) 200 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2 www.kexin.com.cn 104 Diodes SMD Type BAW56 105 0.8 handbook, halfpage IR (nA) 10 Cd (pF) V R = 75 V 4 max 103 10 (KAW56) 0.6 75 V 0.4 25 V 2 0.2 typ 10 typ 0 100 T j ( o C) 0 200 0 4 8 12 VR (V) 16 f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. www.kexin.com.cn 3