Fairchild FZT689BTA Sot223 npn silicon planar medium power high gain transistor Datasheet

SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT689B
TYPICAL CHARACTERISTICS
0.8
- (Volts)
- (Volts)
IC/IB=10
0.6
IC/IB=100
0.6
0.2
0.2
0
0
0.01
0.1
1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
-55°C
+25°C
+100°C
+175°C
VCE=2V
1.6
1.0
1K
0.8
0.6
- (Volts)
1.5K
1.2
- Typical Gain
1.4
0.1
IC - Collector Current (Amps)
+100°C
+25°C
-55°C
1.6
0.01
10
1.4
1.2
1.0
h
V
0.6
h
0.2
0.4
0.2
0
0
0.01
0.1
10
1
0
1.6
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
10
-55°C
+25°C
+100°C
+175°C
VCE=2V
- (Volts)
1.4
1
1.2
1.0
V
0.8
0.1
0.6
0.4
DC
1s
100ms
10ms
1ms
100µs
0.2
0
0
0.01
0.1
1
0.01
0.1
10
IC - Collector Current (Amps)
VBE(on) v IC
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
3 - 220
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
8
A
Continuous Collector Current
IC
3
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
IC/IB=100
0.8
500
0.4
C
ABSOLUTE MAXIMUM RATINGS.
0.4
V
V
0.4
- Normalised Gain
-55°C
+25°C
+100°C
+175°C
Tamb=25°C
IC/IB=200
IC/IB=100
0.8
FZT689B
ISSUE 3 - OCTOBER 1995
FEATURES
* Gain of 400 at IC=2 Amps and low saturation voltage
* Extremely low equivalent on-resistance; RCE(sat) 92mΩ at 3A
APPLICATIONS
* Darlington replacement
* Flash gun convertors and Battery powered circuits
PARTMARKING DETAIL FZT689B
COMPLEMENTARY TYPE FZT789B
100
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V(BR)CBO
20
V
IC=100µ A
V(BR)CEO
20
V
IC=10mA*
Emitter-Base
V(BR)EBO
5
V
IE=100µ A
Collector Cut-Off Current
ICBO
0.1
µA
VCB=16V
Emitter Cut-Off Current
IEBO
0.1
µA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.10
0.50
0.45
V
V
V
IC=0.1A, IB=0.5mA*
IC=2A, IB=10mA*
IC=3A, IB=20mA*
Base-EmitterSaturationVoltage VBE(sat)
0.9
V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9
V
IC=1A, VCE=2V*
Static Forward
Current Transfer
Ratio
hFE
500
400
150
Transition Frequency
fT
150
Input Capacitance
Cibo
Output Capacitance
Cobo
Switching Times
ton
toff
IC=0.1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
MHz
IC=50mA, VCE=5V
f=50MHz
200
pF
VEB=0.5V, f=1MHz
16
pF
VCB=10V, f=1MHz
30
800
ns
ns
IC=500mA,IB1=50mA
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 219
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT689B
TYPICAL CHARACTERISTICS
0.8
- (Volts)
- (Volts)
IC/IB=10
0.6
IC/IB=100
0.6
0.2
0.2
0
0
0.01
0.1
1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
-55°C
+25°C
+100°C
+175°C
VCE=2V
1.6
1.0
1K
0.8
0.6
- (Volts)
1.5K
1.2
- Typical Gain
1.4
0.1
IC - Collector Current (Amps)
+100°C
+25°C
-55°C
1.6
0.01
10
1.4
1.2
1.0
h
V
0.6
h
0.2
0.4
0.2
0
0
0.01
0.1
10
1
0
1.6
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
10
-55°C
+25°C
+100°C
+175°C
VCE=2V
- (Volts)
1.4
1
1.2
1.0
V
0.8
0.1
0.6
0.4
DC
1s
100ms
10ms
1ms
100µs
0.2
0
0
0.01
0.1
1
0.01
0.1
10
IC - Collector Current (Amps)
VBE(on) v IC
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
3 - 220
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
8
A
Continuous Collector Current
IC
3
A
Power Dissipation at Tamb=25°C
Ptot
2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
IC/IB=100
0.8
500
0.4
C
ABSOLUTE MAXIMUM RATINGS.
0.4
V
V
0.4
- Normalised Gain
-55°C
+25°C
+100°C
+175°C
Tamb=25°C
IC/IB=200
IC/IB=100
0.8
FZT689B
ISSUE 3 - OCTOBER 1995
FEATURES
* Gain of 400 at IC=2 Amps and low saturation voltage
* Extremely low equivalent on-resistance; RCE(sat) 92mΩ at 3A
APPLICATIONS
* Darlington replacement
* Flash gun convertors and Battery powered circuits
PARTMARKING DETAIL FZT689B
COMPLEMENTARY TYPE FZT789B
100
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V(BR)CBO
20
V
IC=100µ A
V(BR)CEO
20
V
IC=10mA*
Emitter-Base
V(BR)EBO
5
V
IE=100µ A
Collector Cut-Off Current
ICBO
0.1
µA
VCB=16V
Emitter Cut-Off Current
IEBO
0.1
µA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.10
0.50
0.45
V
V
V
IC=0.1A, IB=0.5mA*
IC=2A, IB=10mA*
IC=3A, IB=20mA*
Base-EmitterSaturationVoltage VBE(sat)
0.9
V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9
V
IC=1A, VCE=2V*
Static Forward
Current Transfer
Ratio
hFE
500
400
150
Transition Frequency
fT
150
Input Capacitance
Cibo
Output Capacitance
Cobo
Switching Times
ton
toff
IC=0.1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
MHz
IC=50mA, VCE=5V
f=50MHz
200
pF
VEB=0.5V, f=1MHz
16
pF
VCB=10V, f=1MHz
30
800
ns
ns
IC=500mA,IB1=50mA
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 219
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