CET CEM0415 N-channel enhancement mode field effect transistor Datasheet

CEM0415
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
150V, 4A, RDS(ON) = 85mΩ @VGS = 10V.
RDS(ON) = 95mΩ @VGS = 6V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
D
D
D
8
7
6
5
1
S
2
S
3
S
4
G
Surface mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS
Parameter
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage(Typ)
VDS
150
Units
V
Gate-Source Voltage
VGS
±30
V
ID
4
A
IDM
16
A
PD
2.5
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
50
C/W
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Sep
http://www.cetsemi.com
CEM0415
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Min
Typ
Max
Units
VDS = 135V, VGS = 0V
1
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
Off Characteristics
150
V
On Characteristics
VGS(th)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
RDS(on)
Rg
Gate input resistance
VGS = VDS, ID = 250µA
2
4
V
VGS = 10V, ID = 3.3A
62
85
mΩ
VGS = 6V, ID = 3.0A
70
95
mΩ
f=1MHz,open Drain
1
Ω
1355
pF
130
pF
50
pF
Dynamic Characteristics c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 30V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 75V, ID = 3.5A,
VGS = 10V, RGEN = 6Ω
18
5
ns
10
35
ns
ns
10
Turn-Off Fall Time
tf
5
Total Gate Charge
Qg
23
nC
Gate-Source Charge
Qgs
5
nC
Gate-Drain Charge
Qgd
6
nC
VDS = 75V, ID = 3.5A,
VGS = 10V
ns
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
IS
b
VSD
VGS = 0V, IS = 2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
2
A
1.2
V
CEM0415
7.5
25 C
VGS=10,8,7V
4.0
3.2
ID, Drain Current (A)
ID, Drain Current (A)
4.8
VGS=5V
2.4
1.6
0.8
0
0.0
1
2
3
4
-55 C
4
6
8
10
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
Ciss
750
500
Coss
250
Crss
0
6
12
18
24
30
2.2
1.9
ID=3.3A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
2
0.0
VGS, Gate-to-Source Voltage (V)
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
TJ=125 C
1.5
0
1000
1.2
3.0
VDS, Drain-to-Source Voltage (V)
1250
1.3
4.5
5
1500
0
6.0
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
10
VDS=75V
ID=3.5A
8
6
4
2
0
0
2
RDS(ON)Limit
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEM0415
5
10
15
20
25
10
1
10
0
10
-1
10
-2
10ms
100ms
1s
DC
TA=25 C
TJ=150 C
Single Pulse
10
-1
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
10
0.2
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
Single Pulse
10
-3
10
-4
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
1
10
2
3
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