DMT2004UPS Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary BVDSS Features and Benefits ID max TC = +25°C RDS(ON) max 24V 5mΩ @ VGS = 10V 80A 6.5mΩ @ VGS = 4.5V 70A 10mΩ @ VGS = 2.5V 55A Low RDS(ON) – Minimizes On-State Losses Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher Density End Products 100% Unclamped Inductive Switching – Ensures More Reliability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Case: PowerDI5060-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 Pin1 Internal Schematic Bottom View Top View S D S D S D G D Top View Pin Configuration Ordering Information (Note 4) Part Number DMT2004UPS-13 Notes: Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D = Manufacturer’s Marking T2004US = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) T2004US YY WW S S S G PowerDI is a registered trademark of Diodes Incorporated. DMT2004UPS Document number: DS38955 Rev. 1 - 2 1 of 7 www.diodes.com July 2016 © Diodes Incorporated DMT2004UPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 10V Steady State TC = +25°C TC = +70°C Unit V V IDM Value 24 ±12 80 65 160 IS 2 A IAS EAS 26 36 A mJ ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Continuous Source-Drain Diode Current (Note 6) Avalanche Current (Note 8) L = 0.1mH Avalanche Energy (Note 8) L = 0.1mH A A Thermal Characteristics Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range TA = +25°C Steady State TA = +25°C Steady State Symbol PD RJA PD RJA RJC TJ, TSTG Value 1.4 88 2.5 -55 to +150 Units W °C/W W °C/W °C/W °C Electrical Characteristics (TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (TJ = +25°C) Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 24 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VGS(TH) RDS(ON) — 3.7 4.5 7.5 0.65 1.45 5.0 6.5 10.0 1.0 V Static Drain-Source On-Resistance 0.55 — — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VGS = 2.5V, ID = 20A VGS = 0V, IS = 2A — — — — — — — — — — — — — — 1683 581 559 1.6 29.6 53.7 4.2 13.4 3.9 9.6 30.8 38.6 11.2 22.9 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: VSD Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR mΩ V Test Condition pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = 15V, ID = 9A ns VDD = 15V, VGS = 10V, RG = 3Ω, ID = 9A ns nC IF = 1.5A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. PowerDI is a registered trademark of Diodes Incorporated. DMT2004UPS Document number: DS38955 Rev. 1 - 2 2 of 7 www.diodes.com July 2016 © Diodes Incorporated DMT2004UPS 20 30.0 VGS = 2.0V 16 VGS = 2.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VGS = 3.0V 20.0 VGS = 4.0V 15.0 VDS = 5V 18 VGS = 4.5V VGS = 10.0V 10.0 VGS = 1.5V 5.0 14 12 10 TJ = 150℃ TJ = 85℃ 8 6 TJ = 125℃ 4 TJ = -55℃ 2 VGS = 1.2V 0.0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0 0 2 0.009 0.008 VGS = 2.5V 0.007 0.006 VGS = 4.5V 0.005 0.004 0.003 VGS = 10.0V 0.002 0.001 2.5 0.009 0.008 0.007 0.006 ID = 12A 0.005 0.004 0.003 0 0 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 12 1.8 0.008 RDS(ON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.5 1 1.5 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.01 0.01 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 TJ = 25℃ VGS = 10V 0.007 TJ = 125℃ 0.006 TJ = 150℃ 0.005 TJ = 85℃ 0.004 TJ = 25℃ 0.003 TJ = -55℃ 0.002 0.001 1.6 VGS = 4.5V, ID = 12A 1.4 1.2 VGS = 2.5V, ID = 12A 1 0.8 0.6 0 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature PowerDI is a registered trademark of Diodes Incorporated. DMT2004UPS Document number: DS38955 Rev. 1 - 2 3 of 7 www.diodes.com July 2016 © Diodes Incorporated DMT2004UPS 1.2 0.01 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.012 VGS = 2.5V, ID = 12A 0.008 0.006 0.004 VGS = 4.5V, ID = 12A 1 ID = 1mA 0.8 0.6 ID = 250μA 0.4 0.2 0 0.002 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs.Junction Temperature 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 10000 20 IS, SOURCE CURRENT (A) CT, JUNCTION CAPACITANCE (pF) VGS = 0V 18 16 14 12 10 TJ = 85℃ TJ = 150℃ 8 TJ = 25℃ TJ = 125℃ 6 4 TJ = -55℃ 2 f = 1MHz Ciss Coss 1000 Crss 100 0 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.2 10 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 20 1000 RDS(ON) Limited ID, DRAIN CURRENT (A) VGS (V) 8 6 VDS = 15V, ID = 9A 4 100 PW =1s 10 PW = 100ms PW = 10ms PW = 1ms TJ(Max) = 150℃ PW = 100µs TC= 25℃ Single Pulse DUT on Infinite Heatsink VGS = 10V 1 2 0 0.1 0 10 20 30 Qg (nC) 40 50 60 Figure 11. Gate Charge 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 PowerDI is a registered trademark of Diodes Incorporated. DMT2004UPS Document number: DS38955 Rev. 1 - 2 4 of 7 www.diodes.com July 2016 © Diodes Incorporated DMT2004UPS 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC (t) = r(t) * RθJC RθJC = 1.1℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance PowerDI is a registered trademark of Diodes Incorporated. DMT2004UPS Document number: DS38955 Rev. 1 - 2 5 of 7 www.diodes.com July 2016 © Diodes Incorporated DMT2004UPS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10º 12º 11º Θ1 6º 8º 7º All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X G Y(4x) Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 PowerDI is a registered trademark of Diodes Incorporated. DMT2004UPS Document number: DS38955 Rev. 1 - 2 6 of 7 www.diodes.com July 2016 © Diodes Incorporated DMT2004UPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com PowerDI is a registered trademark of Diodes Incorporated. DMT2004UPS Document number: DS38955 Rev. 1 - 2 7 of 7 www.diodes.com July 2016 © Diodes Incorporated