Allegro A8837EEJTR-T Photoflash capacitor charger with igbt driver Datasheet

A8837
Photoflash Capacitor Charger with IGBT Driver
Features and Benefits
Description
▪ Power with 1 Li+ or 2 Alkaline/NiMH/NiCAD batteries
▪ Eight-level, digitally-programmable current limits from
700 mA to 2 A
▪ Voltage sensing feedback before output diode for low
leakage
▪ Adjustable output voltage
▪ No primary-side Schottky diode needed
▪ Integrated IGBT driver with trigger
▪ Charge complete indication
▪ >75% efficiency
▪ Low-profile (0.75 mm high) 3 mm × 3 mm MLP/TDFN
10-contact package
The A8837 is a highly integrated IC that charges photoflash
capacitors for digital and film cameras. An integrated MOSFET
switch drives the transformer in a flyback topology. It also
features an integrated IGBT driver that facilitates the flash
discharge function and saves board space.
Package: 10-contact TDFN/MLP (suffix EJ)
The CHARGE pin enables the A8837 and starts the charging
of the output capacitor. When the designated output voltage is
reached, the A8837 stops the charging until the CHARGE pin
¯ pin is an open-drain indicator of
is toggled again. The D̄¯¯ Ō¯¯N̄¯Ē
when the designated output voltage is reached.
The peak current limit can be adjusted to eight different levels
between 700 mA and 2 A, by clocking the CHARGE pin.
This allows the user to operate the flash even at low battery
voltages.
The A8837 can be used with two Alkaline/NiMH/NiCAD or one
single-cell Li+ battery connected to the transformer primary.
Connect the VIN pin to a 3.0 to 5.5 V supply, which can be
either the system rail or the Li+ battery, if used.
The A8837 is available in a very low profile (0.75 mm)
10-contact 3 mm × 3 mm MLP/TDFN package, making it
ideal for space-constrained applications. It is lead (Pb) free,
with 100% matte-tin leadframe plating.
Applications include the following:
Approximate Scale
▪ Digital camera flash
▪ Film camera flash
▪ Cell phone flash
▪ Emergency strobe light
Typical Applications
VBATT 1.5 to 5.5 V
+
VBIAS 3.0 to 5.5 V
N =10.2
T1
D1
R1
R4
150 k7
1%
C1
0.1 μF
100 k7
VOUT
COUT
100 μF
330 V
R2
VIN
CHARGE
R5
C1
0.1 μF
R3
1.20 k7
1%
TRIGGER
IGBTDRV
GND
To IGBT Gate
R5
Figure 1. Typical circuit with separate power supply to transformer
A8837-DS
150 k7
SW
A8837
10 k7
FB
R3
1.20 k7
DONE
C1, C2:
X5R or X7R, 10 V
10 k7
R1
150 k7
R2
VIN
CHARGE
FB
C2
4.7 μF
D1
100 k7
DONE
R6
T1
R4
150 k7
1%
SW
A8837
10 k7
VBIAS 3.0 to 5.5 V
TRIGGER
R6
IGBTDRV
GND
To IGBT Gate
10 k7
Figure 2. Typical circuit with single power supply
VOUT
COUT
A8837
Photoflash Capacitor Charger with IGBT Driver
Selection Guide
Part Number
A8837EEJTR-T
Package
Packing*
10-pin TDFN/MLP
*Contact Allegro for additional packing options
1500 pieces/ 7-in. reel
Absolute Maximum Ratings
Characteristic
Symbol
SW pin
Notes
Rating
Units
V
VSW
–0.3 to 40
VIGBTDRV
–0.3 to VIN + 0.3
V
FB pin
VFB
–0.3 to VIN
V
All other pins
VX
Operating Ambient Temperature
TA
Maximum Junction Temperature
TJ(max)
150
ºC
Tstg
–55 to 150
ºC
IGBTDRV pin
Storage Temperature
Range E
–0.3 to 7
V
–40 to 85
ºC
Package Thermal Characteristics
Characteristic
Package Thermal Resistance
Symbol
RθJA
Test Conditions*
4layer PCB, based on JEDEC standard
Rating Units
45
ºC/W
*Additional information is available on the Allegro website.
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
2
A8837
Photoflash Capacitor Charger with IGBT Driver
Functional Block Diagram
SW
VIN
Control Logic
DCM
Detector
(dV/dt = 0)
18 μs
HmL
Triggered Timer
40 V
DMOS
Q
S SET Q
R
CMP2
CLR Q
ILIM
Comparator
CHARGE
Adjustable
Reference
ILIM Decoder
Enable
Q
Q
SET
CLR
S
FB
R
CMP1
1.2 V
DONE
VIN
TRIGGER
One-Shot
GND
IGBTDRV
Device Pin-out Diagram
Terminal List Table
Number
1,10
Name
NC
Function
No connection
NC
1
10 NC
IGBTDRV
2
9
FB
VIN
3
8
DONE
3
VIN
Power supply input
GND
4
7
TRIGGER
CHARGE
5
6
SW
4
GND
Device ground
5
CHARGE
6
SW
2
7
IGBTDRV IGBT driver gate drive output
Charging enable and ISWLIM code input; set to low to power-off
the A8837
Switch, internally connected to the DMOS power FET drain
TRIGGER Strobe signal input
8
¯N̄¯Ē¯
D̄¯Ō
9
FB
Open drain, when pulled low by internal MOSFET, indicates that
charging target level has been reached
Output voltage feedback
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
3
A8837
Photoflash Capacitor Charger with IGBT Driver
ELECTRICAL CHARACTERISTICS TA = 25°C and VIN = 3.3 V (unless otherwise noted)
Characteristics
Symbol
Min.
Typ.
3
–
–
–
1.8
–
–
–
–
–
–
–
–
–
–
–
–
2
–
20
0.2
–
1.5
1
0.01
2.0
1.8
1.6
1.4
1.2
1
0.86
0.7
0.27
–
18
18
–
–
–
–
–
5.5
–
10
1
2.2
–
–
–
–
–
–
–
–
1
–
–
1
–
0.8
–
–
V
mA
μA
μA
A
A
A
A
A
A
A
A
Ω
μA
μs
μs
μA
V
V
μs
μs
tILIM(L)
0.2
–
–
μs
tILIM(SU)
–
54
–
μs
D̄¯Ō
¯N̄¯Ē
¯ Output Leakage Current*
IDONELKG
–
–
1
μA
D̄¯Ō
¯N̄¯Ē
¯ Output Low Voltage*
FB Voltage Threshold*
FB Input Current
UVLO Enable Threshold
UVLO Hysteresis
IGBT Driver
IGBTDRV On Resistance to VIN
IGBTDRV On Resistance to GND
TRIGGER Input Current
VDONE(L)
–
–
100
mV
Supply Voltage*
VIN
Supply Current
IIN
Primary Side Current Limit
(ILIM clock input at CHARGE pin)
SW On Resistance
SW Leakage Current*
SW Maximum Off-Time
SW Maximum On-Time
CHARGE Input Current
CHARGE Input Voltage*
ILIM Clock High Time at
CHARGE Pin
ILIM Clock Low Time at
CHARGE Pin
Total ILIM Setup Time
TRIGGER Input Voltage*
ISWLIM1
ISWLIM2
ISWLIM3
ISWLIM4
ISWLIM5
ISWLIM6
ISWLIM7
ISWLIM8
RDS(On)SW
ISWLKG
tOFF(Max)
tON(Max)
ICHARGE
VCHARGE(H)
VCHARGE(L)
tILIM1(H)
tILIM(H)
VFB
IFB
VUVLO
Test Conditions
Charging
Charging done
Shutdown (VCHARGE = 0 V, VTRIGGER = 0 V)
VIN = 3.3 V, ID = 800 mA
VSW = 35 V
VCHARGE = VIN
Initial pulse
Subsequent pulses
32 μA into D̄¯Ō
¯N̄¯Ē¯ pin
1.187
–
2.55
–
VFB = 1.205 V
VIN rising
VUVLOHYS
RDS(On)I-V
RDS(On)I-G
ITRIGGER
VTRIGGER(H)
VTRIGGER(L)
tDr
tDf
tr
tf
VIN = 3.3 V, VIGBTDRV = 1.5 V, VTRIGGER = VIN
VIN = 3.3 V, VIGBTDRV = 1.5 V, VTRIGGER = 0 V
VTRIGGER = VIN
Propagation Delay, Rising
Rgate=12 Ω, CLOAD = 6500 pF, VIN = 3.3 V
Rgate=12 Ω, CLOAD = 6500 pF, VIN = 3.3 V
Propagation Delay, Falling
Output Rise Time
Rgate=12 Ω, CLOAD = 6500 pF, VIN = 3.3 V
Output Fall Time
Rgate=12 Ω, CLOAD = 6500 pF, VIN = 3.3 V
Minimum dV/dt for
dV/dt
Measured at SW pin
ZVS Comparator
*Guaranteed by design and characterization over operating temperature range, –40°C to 85°C.
Max. Units
1.205 1.223
–120
–
2.65 2.75
150
–
V
nA
V
mV
–
–
–
2
–
–
–
–
–
5
6
–
–
–
30
30
70
70
–
–
1
–
0.8
–
–
–
–
Ω
Ω
μA
V
V
ns
ns
ns
ns
–
30
–
V/μs
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
4
A8837
Photoflash Capacitor Charger with IGBT Driver
Operation Timing Diagram
VUVLO
VIN
CHARGE
SW
Target VOUT
VOUT
DONE
TRIGGER
IGBTDRV
A
C
B
D
E
F
Explanation of Events:
A.
Start charging by pulling CHARGE to high, provided that VIN is above the VUVLO level.
B.
Charging stops when VOUT reaches the target voltage. D̄¯Ō
¯N̄¯Ē¯ goes low, to signal the
completion of the charging process.
C.
Start a new charging process with a low-to-high transition at the CHARGE pin.
D.
Pull CHARGE to low, to put the controller in low-power standby mode.
E.
Charging does not start, because VIN is below VUVLO level when CHARGE goes high.
F.
After VIN goes above VUVLO, another low-to-high transition at the CHARGE pin is
required to start charging.
IGBT Drive Timing Definition
TRIGGER
50%
tDr
IGBTDRV
10%
50%
tr
tDf
90%
90%
tf
10%
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
5
A8837
Photoflash Capacitor Charger with IGBT Driver
Performance Characteristics
IGBT Drive waveforms are measured with R-C load (12 Ω, 6800 pF)
IGBT Drive Performance
tr
Rising Signal
VIGBTDRV
Symbol
C2
C3
t
Conditions
Parameter
VIGBTDRV
VTRIGGER
time
Parameter
tDr
tr
CLOAD
Rgate
Units/Division
1V
1V
50 ns
Value
22.881 ns
63.125 ns
6800 pF
12 Ω
C2
VTRIGGER
C3
t
tf
Falling Signal
Symbol
C2
C3
t
Conditions
Parameter
VIGBTDRV
VTRIGGER
time
Parameter
tDf
tf
CLOAD
Rgate
Units/Division
1V
1V
50 ns
Value
27.427 ns
65.529 ns
6800 pF
12 Ω
C2
VIGBTDRV
C3
VTRIGGER
t
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
6
A8837
Photoflash Capacitor Charger with IGBT Driver
Functional Description
Overview
The A8837 is a photoflash capacitor charger control IC with
adjustable input current limiting. It also integrates an IGBT
driver for strobe operation of the flash tube, dramatically saving
board space in comparison to discrete solutions for strobe flash
operation. The control logic is shown in the functional block
diagram.
The charging operation of the A8837 is started by a low-to-high
signal on the CHARGE pin, provided that VIN is above VUVLO
level. If CHARGE is already high before VIN reaches VUVLO ,
another low-to-high transition on the CHARGE pin is required
to start the charging. The primary peak current is set by input
clock signals from the CHARGE pin. When a charging cycle is
initiated, the transformer primary side current, IPrimary, ramps up
linearly at a rate determined by the combined effect of the battery
voltage, VBATT , and the primary side inductance, LPrimary. When
IPrimary reaches the current limit, ISWLIM , the internal MOSFET
is turned off immediately, allowing the energy to be pushed into
the photoflash capacitor, COUT, from the secondary winding.
The secondary side current drops linearly as COUT charges. The
switching cycle starts again, either after the transformer flux is
reset, or after a predetermined time period, tOFF(Max) (18 μs),
whichever occurs first.
The output voltage, VOUT, is sensed by a resistor string, R1, R2 ,
and R3 (see application circuit diagrams), connected across the
transformer secondary winding. This resistor string forms a voltage divider that feeds back to the FB pin. The resistors must be
sized to achieve a desired output voltage level based on a typical
value of 1.205 V at the FB pin. As soon as VOUT reaches the
desired value, the charging process is terminated. Toggling the
CHARGE pin can start a refresh operation.
input voltages. The battery life can be effectively extended by
setting a lower current limit at low battery voltages.
Figure 4 shows the ILIM clock timing scheme protocol. The
total ILIM setup time, tILIM(SU) , denotes the time needed for the
decoder circuit to receive ILIM inputs and set ISWLIM . Apply current limit pulses during tILIM(SU) (54 μs) period.
Figure 5 shows the timing definition of the primary current
limiting circuit. At the end of the setup period, tILIM(SU) , primary
t ILIM(H) ≥ 0.2 μs
t ILIM(L) ≥ 0.2 μs
Clock input at
CHARGE pin
t ILIM1(H) = min.
first pulse width
t ILIM(SU) =
ILIM setup time
Subsequent rising
edges (0 to 7)
First rising
edge
0 μs
Switching
starts
54 μs
20 μs
Figure 4. ILIM Clock Timing Definition
Start ILIM counter
Reset ILIM counter
CHARGE
Four rising edges
within t ILIM(SU)
ISWLIM4 = 1.4 A
I SW
Switching
starts
Input Current Limiting
The peak current limit can be adjusted to eight different levels,
from 700 mA to 2.0 A, by clocking the CHARGE pin. An internal digital circuit decodes the input clock signals to a counter,
which sets the charging time. This flexible scheme allows the
user to operate the flash circuit according to different battery
0 μs
20 μs
Switching
stops
54 μs
Figure 5. Current Limit Programming Example (ISWLIM4 selected).
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
7
A8837
Photoflash Capacitor Charger with IGBT Driver
current starts to ramp up to the set ISWLIM. The ISWLIM setting
remains in effect as long as the CHARGE pin is high. To reset the
ILIM counter, pull the CHARGE pin low before clocking in the
new setting.
After the first start-up or an ILIM counter reset, each new current
limit can be set by sending a burst of pulses to the CHARGE pin.
The first rising edge starts the ILIM counter, and up to 8 rising
edges will be counted to set the ISWLIM level. The first pulse
width, tILIM1(H), must be at least 20 μs long. Subsequent pulses
(up to 7 more) can be as short as 0.2 μs. The last low-to-high
edge must arrive within 54 μs from the first edge. The CHARGE
pin will stay high afterwards.
Figure 6 shows the last charging cycle, when the CHARGE pin is
forced low before charging has been completed.
The A8837 implements an adaptive off-time, tOFF , control. After
the switch is turned off, a sensing circuit tracks the flyback voltage at the SW node. A special dV/dt detection circuit is used to
allow minimum-voltage switching, even if the SW voltage does
not drop to zero volts. This enables fast-charging to start earlier
than previously possible, thereby reducing the overall charging
time. However, when the photoflash capacitor charger circuit
starts up at low output voltage, a timeout may be triggered to
limit the maximum switch off-time to 18 μs.
VCHARGE
VSW
ISWLIM = 2.0 A
ISW
VCHARGE
VSW
ISWLIM = 1.8 A
ISW
VCHARGE
VSW
ISWLIM = 1.6 A
VCHARGE
ISW
VSW
VCHARGE
VSW
ISWLIM = 1.4 A
ISW
ISW
Figure 6. Last charging cycle, when the CHARGE pin is forced low before
charging is complete.
Figure 7. ILIM programming waveforms for various ISWLIM; VIN =
3.3 V, VBAT = 2.0 V, VCHARGE 5 V/div, VSW 2 V/div, ISW 500 mA/div,
time scale 10 μs/div.
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
8
A8837
Photoflash Capacitor Charger with IGBT Driver
Applications Information
Transformer Design
Turns Ratio. The minimum transformer turns ratio, N, (Second-
ary : Primary) should be chosen based on the following formula:
VOUT + VD_Drop
N≥
40 − VBATT
(1)
where:
VOUT (V) is the required output voltage level,
VD_Drop (V) is the forward voltage drop of the output diode(s),
VBATT (V) is the transformer battery supply, and
40 (V) is the rated voltage for the internal MOSFET switch,
representing the maximum allowable reflected voltage from the
output to the SW pin.
For example, if VBATT is 3.5 V and VD_Drop is 1.7 V (which could
be the case when two high voltage diodes were in series), and the
desired VOUT is 320 V, then the turns ratio should be at least 8.9.
In a worst case, when VBATT is highest and VD_Drop and VOUT are
at their maximum tolerance limit, N will be higher. Taking VBATT
= 5.5 V, VD_Drop = 2 V, and VOUT = 320 V × 102 % = 326.4 V as
the worst case condition, N can be determined to be 9.5.
In practice, always choose a turns ratio that is higher than the
calculated value to give some safety margin. In the worst case
example, a minimum turns ratio of N = 10 is recommended.
Primary Inductance. As a loose guideline when choosing the
primary inductance, LPrimary (μH), use the following formula:
300 × 10−9 × VOUT
N × ISWLIM
LPrimary ≥
.
(2)
Ideally, the charging time is not affected by transformer primary inductance. In practice, however, it is recommended that a
primary inductance be chosen between 10 μH and 20 μH. When
LPrimary is lower than 10 μH, the converter operates at higher frequency, which increases switching loss proportionally. This leads
to lower efficiency and longer charging time. When LPrimary is
greater than 20 μH, the rating of the transformer must be dramatically increased to handle the required power density, and the
series resistances are usually higher. A design that is optimized to
achieve a small footprint solution would have an LPrimary of 12 to
14 μH, with minimized leakage inductance and secondary capacitance, and minimized primary and secondary series resistance.
See the table Recommended Components for more information.
Recommended Components
Component
C1, Input Capacitor
C2, Input Capacitor
Rating
0.1 μF, ±10%, 16 V X7R
ceramic capacitor (0603)
4.7 μF, ±10%, 10 V, X5R
ceramic capacitor (0805)
Part Number
Source
GRM188R71C104KA01D Murata
LMK212BJ475KG
Taiyo Yuden
COUT, Photoflash
Capacitor
330 V 100 μF (or 19 to 180 μF) EPH-331ELL101B131S
Chemi-Con
D1, Output Diode
2 x 250 V, 225 mA, 5 pF
Philips Semiconductor,
Fairchild Semiconductor
BAV23S
Instead of two resistors,
a single 300 kΩ resistor
with 350 V rating can be
used
150 kΩ each 1/4 W, ± 1%;
R1, R2, FB Resistors 1206, 0805, or 0603 resistors
rated for 150 V
R3, FB Resistor
T1, Transformer
Remarks
10 V minimum rating can
be used
1.2 kΩ 1/10 W ±1% (0603 or
0402)
LP = 14.2 μH, IP = 2 A,
N = 10
T-15-154M
Tokyo Coil
Suitable for ILIM from
0.7 to 2.0 A
LP = 7.4 μH, IP = 2 A,
N = 10
T-16-103A
Tokyo Coil
Suitable for ILIM from
1.2 to 2.0 A only
LP = 14 μH, IP = 1.5 A,
N=10
ST-652956A
Asatech
Suitable for ILIM from
0.7 to 1.4 A only
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
9
A8837
Photoflash Capacitor Charger with IGBT Driver
Leakage Inductance and Secondary Capacitance. The trans-
Output Diode Selection
former design should minimize the leakage inductance to ensure
the turn-off voltage spike at the SW node does not exceed the 40 V
limit. An achievable minimum leakage inductance for this application, however, is usually compromised by an increase in parasitic
capacitance. Furthermore, the transformer secondary capacitance
should be minimized. Any secondary capacitance is multiplied by
N 2 when reflected to the primary, leading to high initial current
swings when the switch turns on, and to reduced efficiency.
Choose the rectifying diode(s), D1, to have small parasitic
capacitance (short reverse recovery time) while satisfying the
reverse voltage and forward current requirements.
The peak reverse voltage of the diode, VD_Peak , occurs when the
internal MOSFET switch is closed, and the primary-side current
starts to ramp-up. It can be calculated as:
VD_ Peak = VOUT + N × VBATT .
(4)
The peak current of the rectifying diode, ID_Peak, is calculated as:
Adjusting Output Voltage
The A8436 senses output voltage during switch off-time. This
allows the voltage divider network, R1 through R3, to be connected at the anode of the high voltage output diode, D1, eliminating power loss due to the feedback network when charging is
complete. The output voltage can be adjusted by selecting proper
values of the voltage divider resistors. Use the following equation
to calculate values for Rx (Ω):
R1 + R2 VOUT
=
−1 .
R3
VFB
(3)
R1 and R2 together need to have a breakdown voltage of at least
300 V. A typical 1206 surface mount resistor has a 150 V breakdown voltage rating. It is recommended that R1 and R2 have
similar values to ensure an even voltage stress between them.
Recommended values are:
R1 = R2 = 150 kΩ (1206)
R3 = 1.2 kΩ (0603)
which together yield a stop voltage of 303 V. Using higher
resistance values for R1, R2, and R3 does not offer significant
efficiency improvement, because the power loss of the feedback
network occurs mainly during switch off-time, and because the
off-time is only a small fraction of each charging cycle.
ID_ Peak = IPrimary_Peak / N .
(5)
Input Capacitor Selection
Ceramic capacitors with X5R or X7R dielectrics are recommended for the input capacitor, C2. It should be rated at least
4.7 μF / 6.3 V to decouple the battery input, VBATT , at the primary
of the transformer. When using a separate bias, VBIAS , for the
A8837 VIN supply, connect at least a 0.1 μF / 6.3 V bypass
capacitor to the VIN pin.
Layout Guidelines
Key to a good layout for the photoflash capacitor charger circuit
is to keep the parasitics minimized on the power switch loop
(transformer primary side) and the rectifier loop (secondary side).
Use short, thick traces for connections to the transformer primary
and SW pin.
Output voltage sensing circuit elements must be kept away from
switching nodes such as SW pin. Make sure that there is no
ground plane underneath R1 and R2, because parasitic capacitance to ground will affect sensing accuracy. It is important that
the D̄¯Ō¯N̄¯Ē¯ signal trace and other signal traces be routed away
from the transformer and other switching traces, in order to minimize noise pickup. In addition, high voltage isolation rules must
be followed carefully to avoid breakdown failure of the circuit
board.
10
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
A8837
Photoflash Capacitor Charger with IGBT Driver
Package EJ, 10-Contact TDFN/MLP
0.30
3.00 ±0.15
0.85
0.50
10
10
3.00 ±0.15
1.65
3.10
A
1
2
1
11X
D
SEATING
PLANE
0.08 C
+0.05
0.25 –0.07
C
C
2.38
PCB Layout Reference View
0.75 ±0.05
0.50
1
For Reference Only
(reference JEDEC MO-229WEED)
Dimensions in millimeters
Exact case and lead configuration at supplier discretion within limits shown
2
0.40 ±0.10
1.65
B
10
2.38
A Terminal #1 mark area
B Exposed thermal pad (reference only, terminal #1
identifier appearance at supplier discretion)
C Reference land pattern layout (reference
IPC7351 SON50P300X300X80-11WEED3M);
All pads a minimum of 0.20 mm from all adjacent pads; adjust as
necessary to meet application process requirements and PCB layout
tolerances; when mounting on a multilayer PCB, thermal vias at the
exposed thermal pad land can improve thermal dissipation (reference
EIA/JEDEC Standard JESD51-5)
Copyright ©2008, Allegro MicroSystems, Inc.
The products described here are manufactured under one or more U.S. patents or U.S. patents pending.
Allegro MicroSystems, Inc. reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the
information being relied upon is current.
Allegro’s products are not to be used in life support devices or systems, if a failure of an Allegro product can reasonably be expected to cause the
failure of that life support device or system, or to affect the safety or effectiveness of that device or system.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, Inc. assumes no responsibility for its use;
nor for any infringement of patents or other rights of third parties which may result from its use.
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Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
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