HLDP50N06 N-Channel Enhancement Mode Power MOSFET Description Features The HLDP50N06 uses advanced trench technology □ VDS =60V,ID =50A and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application □ □ □ Power switchingapplication Hard switched and high frequencycircuits □ RDS(ON)<20mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) . □ Excellentpackageforgoodheatdissipation. Uninterruptible powersupply Marking and pin assignment N-Channel MOSFET Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS Limit Drain-Source Voltage Parameter 60 V Gate-Source Voltage VGS ±20 V ID 50 A ID (100℃) 35.4 A Pulsed Drain Current IDM 200 A Maximum Power Dissipation PD 85 W 0.57 W/℃ EAS 300 mJ TJ,TSTG -55 To 175 ℃ RθJC 1.8 ℃/W Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Unit Thermal Characteristic (Note 2) Thermal Resistance,Junction-to-Case www.hldic.com Page 1 2017.158.V1.0 HLDP50N06 Package Marking and Ordering Information Part NO. Marking Package HLDP50N06 P50N06 TO-220 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.4 1.9 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 14 20 mΩ gFS VDS=5V,ID=20A 18 - - S - 2050 - PF - 158 - PF Crss - 120 - PF Turn-on Delay Time td(on) - 7.4 - nS Turn-on Rise Time tr VDD=30V, RL=6.7Ω - 5.1 - nS td(off) VGS=10V,RG=3Ω - 28.2 - nS - 5.5 - nS - 50 nC - 6 nC - 15 nC Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=30V,VGS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=20A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS Reverse Recovery Time VGS=0V,IS=20A trr Reverse Recovery Charge Qrr Forward Turn-On Time ton - 1.2 V - - 50 A TJ = 25°C, IF =20A - 28 - nS di/dt = 100A/μs - 40 - nC (Note3) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. 2. 3. 4. 5. Repetitive Rating: Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t ≤ 10 se c. Pulse Test: Pulse W idth ≤ 300μs, Duty Cycle ≤ 2 % . Guaranteed by design, not subject toproduction EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25 www.hldic.com Page 2 2017.158.V1.0 HLDP50N06 Test circuit 1) EASTestCircuit 2) Gate Charge TestCircuit 3) Switch Time TestCircuit www.hldic.com Page 3 2017.158.V1.0 HLDP50N06 ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 1 Output Characteristics ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 4 Rdson-Junction Temperature Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current www.hldic.com Figure 6 Source- Drain Diode Forward Page 4 2017.158.V1.0 C Capacitance (pF) HLDP50N06 TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature Transient Thermal Impedance r(t),Normalized Effective ID- Drain Current (A) Vds Drain-Source Voltage (V) Square Wave Pluse Duration (sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.hldic.com Page 5 2017.158.V1.0 HLDP50N06 TO-220 Package Information www.hldic.com Page 6 2017.158.V1.0