ABB2518 ABB2518 Data Sheet 50 ~ 1200 MHz CATV Push-pull Amplifier MMIC 1. Product Overview 1.1 General Description ABB2518, a wide-band linear push-pull amplifier MMIC, has high linearity and low noise over a wide range of frequency from 50 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers, and drop amplifiers of CATV. The amplifier is available in an SOIC8 package and passes through the stringent 100% DC & RF test in an automated test handler. 1.2 Features Low-noise and high linearity Wide-band CATV application at 50 ~ 1200 MHz 75 input & output matching Robust under hard operation conditions 18.9 dB gain at 500 MHz CSO of 71 dBc, CTB of 60 dBc @ Pout = 103 dBV flat for NTSC 77 channels, device voltage = +5 V Single supply: +5 V 1.3 Applications CATV Forward at 50 ~ 1200 MHz HFC Nodes, Head-end Equipment 1.4 Package Profile & RoHS Compliance SOIC8, 6.0x4.8 mm2, surface mount 1/8 ASB Inc. [email protected] RoHS-compliant August 2017 ABB2518 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 50 500 1200 MHz Noise Figure 2.2 2.3 2.7 dB Gain 19.3 18.9 17.4 dB S11 -15 -17 -15 dB S22 -16 -16 -17 dB Output IP31) 42 42 40 dBm Output IP22) 69 Output P1dB 26 CSO 713) dBc CTB 603) dBc Current 275 mA Device Voltage +5 V dBm 26 26 dBm 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 2) OIP2 is measured with two tones (F1 = 400 MHz + F2 = 450 MHz) at an output power of +10 dBm/tone. 3) CSO & CTB measured at Pout = 103 dBV flat for NTSC 77 channels. 2.2 Product Specification Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Min Typ Max Unit Frequency 500 MHz Noise Figure 2.3 dB Gain 17.9 18.9 19.9 dB S11 -17 dB S22 -16 dB Output IP31) 42 dBm Output IP22) 69 dBm Output P1dB 26 dBm Current 235 Device Voltage 275 +5 315 mA V 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 2) OIP2 is measured with two tones (F1 = 400 MHz + F2 = 450 MHz) at an output power of +10 dBm/tone. 2/8 ASB Inc. [email protected] August 2017 ABB2518 2.3 Pin Configuration Pin Description 1,4 RF_IN 2, 3, 6, 7 NC or GND 5, 8 RF_OUT & Bias 2.4 Simplified Outline 1 8 2 7 3 6 4 5 Absolute Maximum Ratings, TA = +25 C Parameters Max. Ratings Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Device Current 360 mA Power Dissipation +1.8 W Junction Temperature +150 C Input RF Power (CW, 75 matched) +26 dBm Note: operation of this device in excess of any of these limits may cause permanent damage. 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 32 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1A CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) 3/8 ASB Inc. [email protected] August 2017 ABB2518 3. Application: 50 ~ 1200 MHz (Vdevice = +5 V) 3.1 Application Circuit & Evaluation Board Vdevice = +5 V C5 L1 C8 C1 L5 L3 C3 L4 C4 T2_MABA_007159 RF IN C7 C10 ABB2518 RF OUT T1_MABA_007159 C2 L6 C9 L2 C6 Vdevice = +5 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB-SOIC8PP-S1 EB No. Bill of Material 4/8 Symbol Value Size Description Manufacturer ABB2518 - - MMIC Amplifier ASB C1, C2, C3, C4 1 F 0603 DC blocking capacitor Murata C5, C6 10 F 0805 Decoupling capacitor Murata C7 1 pF 0603 Matching capacitor Murata C8, C9 2.4 pF 0603 Matching capacitor Murata C10 0.5 pF 0603 Matching capacitor Murata L1, L2 470 nH 1206 RF choke inductor Murata L3, L4 1.8 nH 0603 Matching inductor Murata L5, L6 2.7 nH 0603 Matching inductor Murata T1, T2 1:1 - Transformer balun MACOM ASB Inc. [email protected] August 2017 ABB2518 3.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Typical Unit Frequency 50 500 1200 MHz Noise Figure 2.2 2.3 2.7 dB Gain 19.3 18.9 17.4 dB S11 -15 -17 -15 dB S22 -16 -16 -17 dB IP31) 42 42 40 dBm Output IP22) 69 Output P1dB 26 CSO 713) dBc CTB 603) dBc Current 275 mA Device Voltage +5 V Output dBm 26 26 dBm 1) OIP3 is measured with two tones at an output power of +10 dBm/tone separated by 6 MHz. 2) OIP2 is measured with two tones (F1 = 400 MHz + F2 = 450 MHz) at an output power of +10 dBm/tone. 3) CSO & CTB measured at Pout = 103 dBV flat for NTSC 77 channels. *Note : Pout is 105 dBV @ flat ch and 108 dBV @ 9 dB tilt for CENELEC 42 ch at CSO, CTB > 60 dBc. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S22 K 0 5/8 S12 200 ASB Inc. 400 600 800 Frequency (MHz) [email protected] 10 9 8 7 6 S11 5 4 3 2 1 0 1000 1200 Stability Factor, K Plot of S-parameter & Stability Factor S-parameter (dB) 3.3 August 2017 ABB2518 3.4 Plots of Noise Figure and Performances with Temperature 6 25 -40 °C 5 +25 °C 20 +85 °C Gain (dB) NF (dB) 4 3 15 10 -40 °C 2 +25 °C 5 1 +85 °C 0 0 0 200 400 600 800 Frequency (MHz) 1000 0 1200 0 400 600 800 Frequency (MHz) 1000 0 -40 °C 1200 -40 °C +25 °C +25 °C -5 S22 (dB) +85 °C S11 (dB) 200 -10 -15 +85 °C -10 -20 -20 -30 -25 0 200 400 600 800 Frequency (MHz) 1000 0 1200 200 400 600 800 Frequency (MHz) 1000 1200 21 280 Frequency = 500 MHz 20 Gain (dB) Current (mA) 275 270 18 265 17 260 -60 6/8 19 -40 -20 0 20 40 Temperature (°C) 60 80 -60 100 ASB Inc. [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 August 2017 ABB2518 4. Package Outline (SOIC8) Part No. ABB2518 Symbols A A1 A2 B C D D2 E E1 E2 e L y \ L1-L1 L1 Dimensions (In mm) MIN NOM 1.40 1.50 0.00 ----1.45 0.33 --0.19 --4.80 --3.20 3.30 5.80 6.00 3.80 3.90 2.30 2.40 --1.27 0.40 --------0 ----1.04REF MAX 1.60 0.10 --0.51 0.25 5.00 3.40 6.20 4.00 2.50 --1.27 0.10 8 0.12 le is RF and DC ground. 5. Surface Mount Recommendation (In mm) NOTE 1. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 2. To ensure reliable operation, device ground paddle-to-ground pad soldering is critical. 3. Add mounting screws near the part to fasten the board to a heat sinker. Ensure that the ground & thermal via region contacts the heat sinker. 4. A proper heat dissipation path underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can result from inappropriate heat dissipation. 7/8 ASB Inc. [email protected] August 2017 ABB2518 6. Recommended Soldering Reflow Profile 260 C 20~40 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec) 200 C 150 C 60~180 sec (End of Datasheet) Copyright 2017 ASB Inc. All rights reserved. Specifications subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 8/8 ASB Inc. [email protected] August 2017