CT Micro H11B1ST2 Dc input 6-pin photodarlington optocoupler Datasheet

4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Features
•
High isolation 5000 VRMS
•
CTR flexibility available see order information
•
DC input with transistor output
•
Temperature range - 55 °C to 100 °C
•
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1,
H11B2, H11B3, H11B255, and TIL113 series
consists of a photodarlington transistor optically
coupled to a gallium arsenide Infrared-emitting diode
in a 4-lead DIP package with bending option.
Applications
•
Switch mode power supplies
•
Computer peripheral interface
•
Microprocessor system interface
Package Outline
Schematic
Note: Different bending options available. See package
dimension.
CT Microelectronics
Proprietary & Confidential
Page 1
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
Ratings
Units
5000
VRMS
VISO
Isolation voltage
TOPR
Operating temperature
-55 ~ +100
0C
TSTG
Storage temperature
-55 ~ +150
0C
TSOL
Soldering temperature
260
0C
Forward current
60
mA
1
A
6
V
Notes
Emitter
IF
IF(TRANS)
Peak transient current
(≤1µs P.W,300pps)
VR
Reverse voltage
PD
Power dissipation
120
mW
Power dissipation
150
mW
BVCEO
Collector-Emitter Breakdown Voltage
55
V
BVCBO
Collector-Base Breakdown Voltage
55
V
BVECO
Emitter-Collector Breakdown Voltage
7
V
BVEBO
Emitter-Base Breakdown Voltage
7
V
Detector
PD
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Page 2
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Electrical Characteristics T
A
= 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
IF=10mA
1.24
1.4
V
IF=50mA
1.45
1.5
V
VF
Forward voltage
VF
Forward voltage
IR
Reverse Current
VR = 6V
-
-
5
µA
Input Capacitance
f= 1MHz
-
45
-
pF
Min
Typ
Max
Units
CIN
H11B3
Notes
Detector Characteristics
Symbol
Parameters
Test Conditions
BVCEO
Collector-Emitter Breakdown
IC= 100µA
55
-
-
V
BVECO
Emitter-Collector Breakdown
IE= 100µA
7
-
-
V
BVCBO
Collector-Base Breakdown
IC= 100µA
55
-
-
V
Collector-Emitter Dark Current
VCE= 10V, IF=0mA
-
-
100
nA
Min
Typ
Max
Units
100
-
-
50
-
-
4N32, 4N33
500
-
-
H11B1
500
-
-
200
-
-
100
-
-
ICEO
Notes
Transfer Characteristics
Symbol
Parameters
Test Conditions
4N29, 4N30
4N31
IF= 10mA, VCE= 10V
Notes
Current
CTR
Transfer
%
H11B2
IF= 1mA, VCE= 10V
Ratio
H11B3
VCE(SAT)
H11B255
IF= 10mA, VCE= 5V
100
-
-
TIL113
IF= 10mA, VCE= 1V
300
-
-
IF= 8mA, IC= 2mA
-
-
1.0
IF= 8mA, IC= 2mA
-
-
1.2
Collector-
4N29, 4N30, 4N32,
Emitter
4N33
Saturation
4N31, TIL113
Voltage
H11B1, H11B2,
V
IF= 1mA, IC= 1mA
-
-
1.0
IF=50mA, IC= 50mA
-
-
1.0
H11B3
H11B255
RIO
Isolation Resistance
VIO= 500VDC
CIO
Isolation Capacitance
f= 1Mhz
CT Microelectronics
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1x1011
Ω
0.25
Page 3
pF
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
-
-
4.7
Units
Notes
4N29, 4N30,
IF= 200mA, Ic= 50mA, RL=
4N31, 4N32,
100Ω
TON
Turn On Time
4N33, TIL113
µs
H11B1, H11B2,
IF= 10mA, VCE= 10V, RL=
H11B3, H11B255
100Ω
-
24
-
-
-
30
-
-
90
-
17
-
4N29, 4N30,
TOFF
4N31
IF= 200mA, Ic= 50mA, RL=
4N32, 4N33,
100Ω
Turn Off Time
CT Microelectronics
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µs
TIL113
H11B1, H11B2,
IF= 10mA, VCE= 10V, RL=
H11B3, H11B255
100Ω
Page 4
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Typical Characteristic Curves
CT Microelectronics
Proprietary & Confidential
Page 5
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
CT Microelectronics
Proprietary & Confidential
Page 6
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Package Dimension Dimensions in mm unless otherwise stated
Standard DIP – Through Hole
Wide Lead Forming – Through Hole (M Type)
CT Microelectronics
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Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Surface Mount Forming (S Type)
Surface Mount Forming (Low Profile) (SL Type)
CT Microelectronics
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Page 8
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Recommended Solder Mask Dimensions in mm unless otherwise stated
Marking Information
CT
4N29
YWWK
Note:
CT
4N29
: Denotes “CT Micro”
: Part Number
Y
WW
K
: Fiscal Year
: Work Week
: Manufacturing Code
CT Microelectronics
Proprietary & Confidential
Page 9
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Ordering Information
4N2X(Y)(Z)-G, 4N3X(Y)(Z)-G, H11BX(Y)(Z)-G, TIL113(Y)(Z)-G
X = (9 for 4N2X), (0,1,2,3 for 4N3X series), (1,2,3,255 for H11BX series)
Y = Lead form option (S, SL, M or none)
Z = Tape and reel option (T1, T2 or none)
G= Material option (G: Green, None: Non-green)
Option
Description
Quantity
None
Standard 6 Pin Dip
65Units/Tube
M
Wide Lead Forming
65Units/Tube
S(T1)
Surface Mount Lead Forming – With Option 1 Taping
1000 Units/Reel
S(T2)
Surface Mount Lead Forming – With Option 2 Taping
1000 Units/Reel
SL(T1)
Surface Mount Lead Forming(Low Profile) – With Option 1 Taping
1000 Units/Reel
SL(T2)
Surface Mount Lead Forming(Low Profile) – With Option 2 Taping
1000 Units/Reel
CT Microelectronics
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Page 10
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Carrier Tape Specifications Dimensions in mm unless otherwise stated
Option S(T1) & SL(T1)
Option S(T2) & SL(T2)
CT Microelectronics
Proprietary & Confidential
Page 11
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Reflow Profile
Profile Feature
Pb-Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (ts) from (Tsmin to Tsmax)
60-120 seconds
Ramp-up Rate (tL to tP)
3°C/second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60 – 150 seconds
Peak Body Package Temperature
260°C +0°C / -5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second max
Time 25°C to Peak Temperature
8 minutes max.
CT Microelectronics
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Page 12
Rev 1
Apr, 2014
4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
DISCLAIMER
CT MICROELECTRONICS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILIBILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
______________________________________________________________________________________
CT MICROELECTRONICS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTTEN APPROVAL OF CT MICROELECTRONICS LTD.
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical
support device or system whose failure to perform
implant into the body, or (b) support or sustain life,
can be reasonably expected to cause the failure of
or (c) whose failure to perform when properly used
the life support device or system, or to affect its
in accordance with instruction for use provided in
safety or effectiveness.
the labeling, can be reasonably expected to result
in significant injury to the user.
CT Microelectronics
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Page 13
Rev 1
Apr, 2014
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