CET CEP15P15 P-channel enhancement mode field effect transistor Datasheet

CEP15P15/CEB15P15
CEF15P15
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
VDSS
RDS(ON)
ID
@VGS
CEP15P15
-150V
0.24Ω
-15A
-10V
CEB15P15
-150V
0.24Ω
-15A
-10V
CEF15P15
-150V
0.24Ω
-15A d
-10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
G
D
G
D
S
G
S
CEB SERIES
TO-263(DD-PAK)
G
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
D
S
S
CEF SERIES
TO-220F
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
Drain-Source Voltage
VDS
-150
Gate-Source Voltage
VGS
±20
Drain Current-Continuous @ TC = 25 C
ID
@ TC = 100 C
Drain Current-Pulsed
IDM
a
Maximum Power Dissipation @ TC = 25 C
e
PD
- Derate above 25 C
TO-220F
Units
V
V
-15
-15
d
A
-9
-9d
A
- 60
- 60
96
34
W
0.27
W/ C
0.77
d
A
Single Pulsed Avalanche Energy h
EAS
250
mJ
Single Pulsed Avalanche Current h
IAS
10
A
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
RθJC
1.3
3.7
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2012.Nov
http://www.cetsemi.com
Electrical Characteristics
Parameter
CEP15P15/CEB15P15
CEF15P15
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
-150
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = -150, VGS = 0V
-1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
-4
V
0.24
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 250µA
Static Drain-Source
On-Resistance
RDS(on)
VGS = -10V, ID = -7.5A
0.2
f=1MHz,open Drain
5.3
Ω
1245
pF
175
pF
35
pF
18
ns
8
ns
63
ns
Rg
Gate input resistance
Dynamic Characteristics
-2
c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -25V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = -75V, ID = -7.5A,
VGS = -10V, RGEN = 10Ω
Turn-Off Fall Time
tf
14
ns
Total Gate Charge
Qg
31
nC
Gate-Source Charge
Qgs
5
nC
Gate-Drain Charge
Qgd
12
nC
VDS = -120V, ID = -7.5A,
VGS = 10V
Drain-Source Diode Characteristics and Maximun Ratings
IS
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
VSD
VGS = 0V, IS = -15A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
h.L = 5mH, IAS =10A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
2
-15
A
-1.2
V
CEP15P15/CEB15P15
CEF15P15
30
25 C
-VGS=10,8,7,6,V
10.0
-ID, Drain Current (A)
-ID, Drain Current (A)
12.5
-VGS=5V
7.5
5.0
2.5
-VGS=4V
0
0.0
2
4
6
8
0
2
4
6
8
10
12
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
900
600
Coss
300
Crss
0
5
10
15
20
25
2.4
2.0
ID=-7.5A
VGS=-10V
1.6
1.2
0.8
0.4
0.0
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
-55 C
-VGS, Gate-to-Source Voltage (V)
Ciss
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
TJ=125 C
6
0
1200
1.2
12
-VDS, Drain-to-Source Voltage (V)
1500
1.3
18
10
1800
0
24
-25
0
25
50
75
100
125
150
VGS=0V
10
2
10
1
10
0
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
10
VDS= -120V
ID= -7.5A
8
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
CEP15P15/CEB15P15
CEF15P15
6
4
2
0
0
6
12
18
24
30
RDS(ON)Limit
100us
10
1
1ms
10ms
DC
10
10
36
2
0
TC=25 C
TJ=150 C
Single Pulse
-1
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
PDM
0.1
t1
0.05
0.02
0.01
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-2
10
-4
t2
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
1
10
2
3
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