Kexin MMBT5401-L Pnp transistor Datasheet

Transistors
SMD
SMD Type
Type
PNP Transistors
MMBT5401 (KMBT5401)
SOT-23-3
Unit: mm
Features
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
1
0.55
Pb-Free Packages are Available
+0.2
1.6 -0.1
+0.2
2.8 -0.1
High Voltage Transistors
2
+0.02
0.15 -0.02
+0.2
1.1 -0.1
+0.1
0.95 -0.1
+0.1
1.9 -0.2
1. Base
0-0.1
+0.1
0.68 -0.1
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base v oltage
VCBO
-160
V
Collector-emitter v oltage
VCEO
-150
V
Emitter-base voltage
VEBO
-5
V
Collector current-continuous
IC
-0.6
A
Collector Power Dissipation
Pc
300
mW
TJ, Tstg
-55 to +150
Junction and storage temperature
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditi ons
Min
Typ
Max
Unit
-160
V
-150
V
-5
V
Collector-base breakdown voltage
VCBO
IC = -100
Collector-emitter breakdown voltage *
VCEO
IC =- 1.0 mA, IB = 0
Emitter-base breakdown voltage
VEBO
IE = -10
Collector cutoff current
ICBO
VCB =- 120 V, IE = 0
-0.1
A
Emitter cutoff current
IEBO
VEB = -4.0 V, IC = 0
-0.1
A
hFE
DC current gain *
A, IE = 0
A, IC = 0
IC = -1.0 mA, VCE = -5 V
80
IC = -10 mA, VCE = -5 V
100
IC = -50 mA, VCE = -5 V
50
Collector-emitter saturation voltage *
VCE(sat) IC = -50 mA, IB = -5.0 mA
Base-emitter saturation voltage *
VBE(sat) IC = -50 mA, IB = -5.0 mA
Transiston frequency
* Pulse Test: Pulse Width = 300
fT
VCE=-5V,IC=-10mA,f=30MHz
300
-0.5
-1.0
100
V
V
MHz
s, Duty Cycle=2.0%.
■ Classification of hfe(2)
Type
MMBT5401
MMBT5401-L
MMBT5401-H
Range
100-300
100-200
200-300
Marking
2L
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1
Transistors
SMD
SMD Type
Type
MMBT5401
(KMBT5401)
Typical Characteristics
Static Characteristic
-20
-100uA
COMMON
EMITTER
Ta=25℃
-90uA
200
-60uA
-50uA
-40uA
-6
50
-20uA
IB=-10uA
-0
-3
-6
VCE
-0.6
Ta=100℃
-0.2
-0.0
-0.1
-1
-10
-600
-100
COLLECTOR CURRENT
IC
Ta=25℃
-0.01
-0.1
-1
(mA)
-10
Cob / Cib
100
-600
-100
COLLECTOR CURRENT
(mA)
IC
—— VCB / VEB
f=1MHz
IE=0 / IC=0
IC (mA)
o
(pF)
Ta=25 C
Cib
C
-10
o
Ta=100 C
CAPACITANCE
COLLECTOR CURRENT
IC
-0.1
VCE=-5V
Ta=25℃
-1
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
fT
-1
-10
REVERSE VOLTAGE
—— IC
Pc
0.4
fT
250
200
150
100
50
0
Cob
1
-0.5
-1.0
COLLECTOR POWER DISSIPATION
Pc (W)
300
10
VBE(V)
BASE-EMITTER VOLTAGE
(MHz)
(mA)
Ta=100℃
IC —— V
BE
-100
VCEsat ——
-600
-100
IC
β=10
Ta=25℃
-0.4
-10
COLLECTOR CURRENT
-1
β=10
-0.8
-1
(V)
VBEsat —— IC
-1.0
TRANSITION FREQUENCY
0
-9
COLLECTOR-EMITTER VOLTAGE
——
V
(V)
Ta
0.3
0.2
0.1
VCE=-5V
o
Ta=25 C
-0
-5
-10
-15
COLLECTOR CURRENT
2
o
Ta=25 C
100
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
-0
150
-30uA
-4
-2
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
hFE
-70uA
-12
-8
Ta=100 C
250
-80uA
-10
VCE=-5V
o
DC CURRENT GAIN
(mA)
-14
COLLECTOR CURRENT
-16
IC
-18
hFE —— IC
300
www.kexin.com.cn
-20
IC
-25
(mA)
-30
0.0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
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