MMBF170Q N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • • Low Gate Threshold Voltage • • Low Input Capacitance • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input/Output Leakage • • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP Capable (Note 4) Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.008 grams (Approximate) D SOT23 D G Top View S G S Equivalent Circuit Top View Ordering Information (Note 5) Part Number MMBF170Q-7-F MMBF170Q-13-F Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 K6Z = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2014) M = Month (ex: 9 = September) Date Code Key Year 1998 1999 2000 2001 2002 … 2014 2015 2016 2015 2016 2017 2018 2019 2020 Code J K L M N … B C D C D E F G H Month Code Jan 1 Feb 2 MMBF170Q Document number: DS37720 Rev. 1 - 2 Mar 3 Apr 4 May 5 Jun 6 1 of 5 www.diodes.com Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D January 2015 © Diodes Incorporated MMBF170Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR 60 V Gate-Source Voltage Continuous Pulsed VGSS Drain Current (Note 6) Continuous Pulsed ID ±20 ±40 500 800 V mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value 300 1.80 Units mW mW/°C RθJA 417 K/W TJ, TSTG -55 to +150 °C Total Power Dissipation (Note 6) PD Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 100μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±15V, VDS = 0V VGS(th) 0.8 2.1 3.0 V VDS = VGS, ID = 250μA RDS (ON) ⎯ ⎯ ⎯ ⎯ 5.0 5.3 Ω VGS = 10V, ID = 200mA VGS = 4.5V, ID = 50mA gFS 80 ⎯ ⎯ mS Input Capacitance Ciss ⎯ 22 40 pF Output Capacitance Coss ⎯ 11 30 pF Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF Turn-On Time ton ⎯ ⎯ 10 ns Turn-Off Time toff ⎯ ⎯ 10 ns ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Notes: VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50Ω 6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com. 7. Short duration pulse test used to minimize self-heating effect. MMBF170Q Document number: DS37720 Rev. 1 - 2 2 of 5 www.diodes.com January 2015 © Diodes Incorporated MMBF170Q 7 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 4 3 2 1 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current 1.0 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5 0 0 5 2.0 1.5 1.0 0.5 0 -55 6 70 95 -30 -5 20 45 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs. Junction Temperature 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 400 PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Max Power Dissipation vs. Ambient Temperature 0 25 MMBF170Q Document number: DS37720 Rev. 1 - 2 3 of 5 www.diodes.com January 2015 © Diodes Incorporated MMBF170Q Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. ° 7 l l A H E N A L P5 2 E. G0 U A G J K 1 K a SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm M A 1 L L B C D G F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT23 Y Z C X MMBF170Q Document number: DS37720 Rev. 1 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com January 2015 © Diodes Incorporated MMBF170Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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