CHA3024-QGG 2-22GHz LNA with AGC UMS A3667A A3688A YYWWG SMU A8 78 663A GWWYY GaAs Monolithic Microwave IC Description The CHA3024-QGG is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) that operates between 2 and 22GHz. It is designed for a wide range of applications, such as electronic warfare, X and Ku Point to Point Radio, and test instrumentation. The circuit is manufactured using a 0.15µm gate length pHEMT process, with via holes through the substrate, air bridges and optical gate lithography. The part is supplied as 5x5 QFN package with input and output RF accesses matched to 50 ohms. YYWWG UMS UMS A3667A A3688A UMS A3024 UMS A3667A A3688A A3667A A3688A YYWW YYWWG YYWWG UMS 3667A 3688A YWWG SMU A8 78 663A GWWYY UMS A3688A A3667A YYWWG SMU A878663 GWWY Main Features ■ Broadband performances: 2-22GHz ■ Typical Linear Gain: 15dB ■ Up to 30dB AGC with Vg2 ■ P1dB: 18dBm ■ Psat: 20dBm ■ OIP3: 28dBm ■ Typical Noise Figure: 3dB ■ DC bias: Vd=5V@Id=100mA, Vg1=-0.3V and Vg2=1.7V. ■ 28L QFN 5x5 Linear Gain, Return Losses (dB) 20 Linear gain, Return Losses (dB) UMS 15 10 5 0 S11(dB) S22(dB) S21(dB) Noise (dB) -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 Frequency (GHz) 18 20 22 24 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp. Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 Min 2 Typ Max 22 15 3 18 1/16 Unit GHz dB dB dBm Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Electrical Characteristics Tamb.= +25°C,Vg1 to be set in order to have Idq=100mA, Vg2=1.7V Symbol Parameter Min Typ Max Unit Freq Frequency range 2 22 GHz Gain Linear Gain 15 dB ΔG Gain Control (with Vg2 variation) 30 dB NF Noise Figure 3 dB IRL Input Return Loss 17 dB ORL Output Return Loss 16 dB P1dB Output power for 1dB Gain Compression 18 dBm Psat Saturated output power 20 dBm OIP3 Output Third Order Intercept 28 dBm Idq Quiescent current on Vd 100 mA Vd Supply voltage on Vd 4.5 5 5.5 V Id Drain current @3dB gain compression 125 mA The values are representative of typical “test fixture” measurements as defined on the drawing in paragraph “Proposed Evaluation Board”. Typical Bias Conditions Tamb.= +25°C Symbol Pin Parameter Values Unit Vg1 13 Gate control1 for the amplifier -0.4 V Vg2 1 Gate control2 for the amplifier 1.7 V Vd 25 Drain Voltage 5 V The associated drain current with no RF input power is Idq=100mA This typical bias is recommended in order to get the best compromise between output power, linearity and Noise Figure performance vs. Temperature. Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 2/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 7V V Idq Drain bias current 190 mA Vg1 Gate bias voltage Vg1 -2 to 1 V Vg2 Gate bias voltage Vg2 -2 to 2 V Pin Maximum CW input power overdrive 15 dBm Ta Operating temperature range (chip backside) -40 to 85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage: these maximum ratings parameters could not be cumulated. These are stress ratings only, and functional operation of the device at these conditions is not implied. Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 3/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Device thermal performance All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the Tcase temperature cannot be maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF). The provided thermal information in the next chart is for nominal biasing point: Idq=100mA and Vd=5V, without RF drive. DEVICE THERMAL SPECIFICATION : Product name Recommended max. junction temperature (Tj max) : 114 Junction temperature absolute maximum rating : 175 Max. continuous dissipated power (Pdiss. Max.) : 0.5 => Pdiss. Max. derating above Tcase(1)= 85 °C : 17 Junction-Case thermal resistance (Rth J-C)(2) : 57.7 Minimum Tcase operating temperature(3) : -40 (3) Maximum Tcase operating temperature : 85 Minimum storage temperature : -55 Maximum storage temperature : 150 °C °C W mW/°C °C/W °C °C °C °C (1) Derating at junctio n temperature co nstant = Tj max. (2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased. (3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 0.6 0.4 0.3 0.2 0.1 Pdiss. Max. @Tj <Tj max (W) 0 -50 -25 0 25 50 75 100 125 Pdiss. Max. @Tj <Tj max (W) 0.5 Tcase Example: QFN 16L 3x3 Location of temperature reference point (Tcase) on package's bottom side Tcase (°C) 6.5 Under RF drive, for Tcase=+85°C, with Vd=5V, Id=140mA, Pout=21.6 dBm , Pdiss=0.57W then Tj max=117 °C. Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 4/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Typical Board Measurements Tamb.= +25°C, Vd=5V, Vg1 set in order to get Idq =100mA, Vg2=1.7V Linear Gain, Return (dB) Linear Gain and Return LossesLosses versus Frequency Linear gain, Return Losses (dB) 20 15 10 5 S11(dB) 0 S22(dB) -5 S21(dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 Frequency (GHz) 18 20 22 24 26 18 20 22 24 26 Noise Figure versus(dB) frequency Noise Figure 10 9 Noise Figure (dB) 8 7 6 5 4 3 2 1 0 0 2 4 6 Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 8 10 12 14 16 Frequency (GHz) 5/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Typical Board Measurements Tamb.= +25°C, Vd =5V, Vg1 set in order to get Idq =100mA, Vg2=1.7V Linear Return Losses (dB)Frequency Broadband Linear Gain, Gain and Return Losses versus Linear gain, Return Losses (dB) 20 15 10 5 S11(dB) 0 S22(dB) -5 S21(dB) -10 -15 -20 -25 -30 0 5 10 15 20 25 Frequency (GHz) 30 35 40 S21 (dB) vs. Id (Vg2 control) Gain tuning versus Id (Vg2 variation) with Vd=5V and Vg1=-0.4V 20 15 S21 (dB) 10 Id=100mA Id=83mA Id=58mA Id=50mA Id=45mA Id=38mA Id=29mA Id=18mA Id=8mA 5 0 -5 -10 -15 -20 0 2 4 6 8 Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 10 12 14 16 18 20 22 24 26 Frequency (GHz) 6/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Typical Board Measurements Tamb.= +25°C, +85°C,-40°C, Vd =5V, Vg1 set in order to get Idq =100mA, Vg2=1.7V Vg1 and Vg2 remain constant versus temperature. Linear gain (dB) Linear Gain Gain vs Temperature Linear (dB) 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 S21(dB) @25 C S21(dB) @85 C S21(dB) @-40 C 0 2 4 6 8 10 12 14 16 Frequency (GHz) 18 20 22 24 26 18 20 22 24 26 (dB) Noise Noise FigureFigure vs Temperature 10 9 Noise Figure (dB) 8 NF @Tc=25°C 7 NF @Tc=85°C 6 NF@Tc=-40°C 5 4 3 2 1 0 0 2 4 6 Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 8 10 12 14 16 Frequency (GHz) 7/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Typical Board Measurements Tamb.= +25°C, Vd =5V, Vg1 set in order to get Idq =100/125 mA , Vg2=1.7V Pout (dBm) Output power (dBm)compression vs. compression level Pout versus level 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 P1dB_Idq_100mA P1dB_Idq_125mA Psat_Idq_100mA Psat_Idq_125mA 0 2 4 6 8 10 12 14 16 Frequency (GHz) 18 20 22 24 18 20 22 24 TOITOI (dBm) IdqIdq Output (dBm)vs. versus 34 32 TOI (dBm) 30 28 26 24 Idq=100mA 22 Idq=125mA 20 18 16 0 2 4 6 Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 8 10 12 14 16 Frequency (GHz) 8/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Typical Board Measurements Tamb.= +25°C, Vd =5V, Vg1 set in order to get Idq =100mA, Vg2=1.7V Pout (dBm), Gain (dB), (mA)@@12 GHzGHz Main Performance versus PinId (dBm) Freq=12 25 260 Pout Id 20 220 15 180 10 140 5 100 0 60 -10 -8 -6 -4 -2 0 2 Pin (dBm) 4 6 8 10 Drain current (mA) Pout (dBm), Gain (dB) Gain 12 GainMain (dB),Performance P1dB (dBm), PsatVg2 (dBm), (mA) @12 versus (V) @IdFreq=12 GHz GHz 20 200 Gain P1dB Psat Id 160 15 120 10 80 5 40 0 0 -1 -0.75 -0.5 -0.25 0 Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 0.25 0.5 0.75 Vg2 (V) 9/16 1 1.25 1.5 1.75 2 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Drain current (mA) @ P1dB Gain (dB), P1dB (dBm), Psat (dBm) 25 2-22GHz LNA with AGC CHA3024-QGG Package outline: 28 Leads 5x5 QFN (1) Matte tin, Lead Free Units : From the standard : (Green) mm JEDEC MO-220 (VHHD) 29- GND 12345678910- VG2 Nc Nc RF in GND(2) Nc Nc Nc Nc Nc 11121314151617181920- Nc Nc VG1 Nc Nc Nc Nc GND(2) RF out Nc 2122232425262728- Nc Nc Nc Nc VD Nc Nc Nc (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0017 (http://www.ums-gaas.com) for exact package dimensions. (2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 10/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Application Circuit: Vd Vg2 10nF 100pF 10nF 100pF RFIN 25 1 4 19 RFOUT 13 CHA3024-QGG 100pF 10nF Vg1 Depending on the board, additional capacitors such as 1µF may be added on each biasing access if necessary, for better low frequency decoupling. Pin Description: Pin Symbol Description 5,18, 29 (exposed PAD) GND 2,3,6,7,8,9,10,11,12,14,15, 16,17,20,21,22,23,24,26,27,28 4 13 19 25 1 NC Must be grounded properly, internal connections to ground are made No internal connections RF IN VG1 RF OUT VD VG2 RF input Gate voltage, bias network required RF output Drain voltage, bias network required Gate voltage bias network required UMS recommends also to ground Pin 2,3,5,6,7,15,16,17,18,20,21 (see proposed footprint p14). Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 11/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Proposed Evaluation Board Compatible with the proposed footprint on page p14. Top dielectric material is Rogers 4003 / 8mils or equivalent substrate. Decoupling capacitors at first level are 100pF. Decoupling capacitors at second level are 10nF. Additional capacitors such as 1µF may also be added on each DC access. Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 12/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Device Operation Device Power Up instructions: 1) 2) 3) 4) 5) 6) Ground the device. Set Vg1 to -1.5V. Set Vd to 5V (nominal value for Vd). Set Vg2 to 1.7V (nominal value for Vg2). Set Vg1 in the range of -0.3V for having Idq=100mA. Apply RF input power and adjust Vg2 to obtain desired gain. Device Power Down instructions: 1) 2) 3) 4) 5) 6) Set Vg2 to 1.7V. Turn RF power supply off. Set Vg1 to -1.5V in order to get Idq=0mA. Set Vg2 to 0V. Set Vd to 0V. Set Vg1 to 0V. DC Schematic Vd=5V, Vg1=-0.3V, Vg2=1.7V, Idq=100mA Vd RF out Vg2 150 ohms 50 ohms RF in Cell n Cell 1 300 ohms Vg1 Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 13/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Package footprint and Definition of the measurements planes The reference planes used for the provided measurements are symmetrical from the symmetrical axis of the package (see drawing beside). The input and output reference planes are located at 3.65 mm offset (input wise and output wise respectively) from this axis. From the edge of the QFN, the reference planes are 1.15mm apart. 3.65 mm 3.65 mm Package Information Parameter Package body material Lead finish MSL Rating Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 Value RoHS-compliant Low stress Injection Molded Plastic 100% matte tin (Sn) MSL3 14/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Note Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 15/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 2-22GHz LNA with AGC CHA3024-QGG Recommended package footprint Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot print recommendations. SMD mounting procedure For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com. Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information QFN 28L 5x5 package: CHA3024-QGG/XY Stick: XY = 20 Tape & reel: XY = 21 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA3024-QGG-4346 - 12 Dec 14 16/16 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34