Rohm BDJ2HA3MEFJ-LB 0.3a variable output industrial ldo regulator Datasheet

Datasheet
0.3A Variable Output
Industrial LDO Regulator
BDxxHA3MEFJ-LB
General Description
This is the product guarantees long time support in Industrial market.
BDxxHA3MEFJ-LB is a LDO regulator with output current 0.3A. The output accuracy is ±1% of output voltage. With external
resistance, it is available to set the output voltage at random (from 1.5V to 7.0V).It has package type: HTSOP-J8. Over
current protection (for protecting the IC destruction by output short circuit), circuit current ON/OFF switch (for setting the
circuit 0μA at shutdown mode), and thermal shutdown circuit (for protecting IC from heat destruction by over load condition)
are all built in. It is usable for ceramic capacitor and enables to improve smaller set and long-life.
Package
Features
„ Long Time Support a Product for Industrial
Applications.
„ High accuracy reference voltage circuit
„ Built-in Over Current Protection circuit (OCP)
„ Built-in Thermal Shut Down circuit (TSD)
„ With shut down switch
(Typ.)
(Typ.)
(Max.)
4.90mm x 6.00mm x 1.00mm
HTSOP-J8
Applications
Industrial Equipment
Key Specifications
„ Input power supply voltage range:
4.5V to 8.0V
„ Output voltage range(Variable type):
1.5V to 7.0V
„ Output voltage(Fixed type): 1.5V/1.8V/2.5V/3.0V/3.3V
5.0V/6.0V/7.0V
„ Output current:
0.3A (Max.)
„ Shutdown current:
0μA(Typ.)
„ Operating temperature range:
-40℃ to +105℃
HTSOP-J8
Typical Application Circuit
VCC
VO
CIN
VCC
R1
COUT
FB
EN
GND
FIN
VO_S
COUT
EN
R2
GND
CIN,COUT : Ceramic Capacitor
○Product structure:Silicon monolithic integrated circuit
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VO
CIN
FIN
CIN,COUT : Ceramic Capacitor
○This product has no designed protection against radioactive rays.
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Datasheet
BDxxHA3MEFJ-LB
Ordering Information
B
D
x
x
Part
Output
Number voltage
00:Variable
15:1.5V
18:1.8V
25:2.5V
30:3.0V
33:3.3V
50:5.0V
60:6.0V
70:7.0V
H
A
3
Voltage
Output
resistance current
H:10V
A3:0.3A
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M
E
High
Reliability
Grade
F
J
-
Package
EFJ:HTSOP-J8
LBH2
Product class
LB for Industrial applications
Packaging and forming specification
H2:Emboss tape reel
“M”:Mseries
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Datasheet
BDxxHA3MEFJ-LB
Block Diagram
BD00HA3MEFJ-LB
GND
8
3
VCC
Ceramic
≧ 1.0μF
Capacitor
OCP
FIN
SOFT
START
(VO+0.90) to 8.0V
Body di
1.5V to 7.0V
Vo
1
Ceramic
Capacitor ≧ 1.0μF
R1
2
EN
5
TSD
FB
R2
VCC
4.5~8.0V
Figure 1. Block Diagram
BDxxHA3MEFJ-LB (Fixed type)
GND
8
3
Ceramic
≧ 1.0μF
Capacitor
OCP
FIN
SOFT
START
Body di
Vo
1
Ceramic
≧ 1.0μF
Capacitor
2
EN
5
Vo_s
TSD
Figure 2. Block Diagram (Fixed type)
Pin Configuration
TOP VIEW
VO
VCC
FB/Vo_s
N.C.
GND
N.C.
N.C.
EN
Pin Description
Pin No.
1
2
3
4
5
6
7
8
Reverse
Pin name
VO
FB/Vo_s
GND
N.C.
EN
N.C.
N.C.
VCC
FIN
Pin Function
Output pin
Feedback pin (Used to connect Vo)
GND pin
Non Connection (Used to connect GND or OPEN state.)
Enable pin
Non Connection (Used to connect GND or OPEN state.)
Non Connection (Used to connect GND or OPEN state.)
Input pin
Substrate(Connect to GND)
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Datasheet
BDxxHA3MEFJ-LB
Absolute Maximum Ratings (Ta=25℃)
Parameter
Power supply voltage
EN voltage
Power dissipation
HTSOP-J8
Operating Temperature Range
Storage Temperature Range
Junction Temperature
Symbol
VCC
VEN
Limits
-0.3 to +10.0 *1
10.0
Unit
V
V
Pd*2
2110 *2
mW
Topr
Tstg
Tjmax
-40 to +105
-55 to +150
+150
℃
℃
℃
*1 Not to exceed Pd
*2 Reduced by 16.9mW/℃ for each increase in Ta of 1℃ over 25℃. (when mounted on a board 70mm×70mm×1.6mm glass-epoxy board, two layer)
Recommended Operating Ratings (Ta=25℃)
Parameter
Input power supply voltage
EN voltage
Output voltage setting range
Output current
Symbol
VCC
VEN
VO
IO
Min.
4.5
0.0
1.5
0.0
Max.
8.0
8.0
7.0
0.3
Unit
V
V
V
A
Electrical Characteristics (Unless otherwise noted, EN=3V, Vcc=6V, R1=43kΩ, R2=8.2kΩ)
Parameter
Symbol
Temp
Min.
Typ.
Max.
Unit
Conditions
Circuit current at shutdown
mode
ISD
25℃
-40~105℃
-
0
-
5
5
μA
VEN=0V, OFF mode
Bias current
ICC
25℃
-40~105℃
-
600
-
900
1200
μA
Line regulation
Reg.I
25℃
-40~105℃
-1.0
-1.0
-
1.0
1.0
%
VCC =( Vo+0.9V )→8.0V
Load regulation
Reg IO
25℃
-40~105℃
-1.5
-1.5
-
1.5
1.5
%
IO=0→0.3A
Minimum dropout Voltage1
VCO1
25℃
-40~105℃
-
0.2
-
0.3
0.4
V
VCC=5V, IO=0.1A
Minimum dropout Voltage2
VCO2
25℃
-40~105℃
-
0.4
0.6
0.8
V
VCC=5V, IO=0.2A
Minimum dropout Voltage3
VCO3
25℃
-40~105℃
-
0.6
-
0.9
1.2
V
VCC=5V, IO=0.3A
Output reference voltage
(Variable type)
VFB
25℃
-40~105℃
25℃
-40~105℃
0.808
0.824
VO×1.01
IO=0mA
VO
0.800
VO
V
Output voltage(Fixed type)
0.792
0.776
VO×0.99
Vo×0.97
Vo
Vo×1.03
V
IO=0mA
EN Low voltage
VEN(Low)
25℃
-40~105℃
0
0
-
0.8
0.8
V
EN High voltage
VEN(High)
25℃
-40~105℃
2.4
2.4
-
8.0
8.0
V
EN Bias current
IEN
25℃
-40~105℃
1
-
3
-
9
9
µA
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Datasheet
BDxxHA3MEFJ-LB
Typical Performance Curves
(Unless otherwise noted, EN=3V, VCC=6V, R1=43kΩ, R2=8.2kΩ)
Vo
100mV/div
Vo
100mV/div
T.B.D
IIo
O
0.2A/div
IoIO
0.2A/div
10usec/div
10usec/div
Figure 4.
Transient Response
(0→0.3A)
Co=1µF, Ta=25°C
Figure 3.
Transient Response
(0→0.3A)
Co=1µF, Ta=-40°C
VEN
Vo
100mV/div
VEN
Vo
100mV/div
VCC
T.B.D
VCC
Io
0.2A/div
VO
T.B.D
Io
0.2A/div
10usec/div
2msec/div
Figure 5.
Transient Response
(0→0.3A)
Co=1µF,Ta=105℃
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Figure 6.
Transient Response
(0.3→0A)
Co=1µF,Ta=-40℃
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BDxxHA3MEFJ-LB
Vo
100mV/div
Vo
100mV/div
Io
0.2A/div
Io
0.2A/div
2msec/div
2msec/div
Figure 7.
Transient Response
(0.3→0A)
Co=1µF,Ta=25℃
Figure 8.
Transient Response
(0.3→0A)
Co=1µF,Ta=105℃
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
1msec/div
1msec/div
Figure 9.
Input sequence 1
Co=1µF,Ta=-40℃
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Figure 10.
Input sequence 1
Co=1µF,Ta=25℃
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BDxxHA3MEFJ-LB
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
1msec/div
40msec/div
Figure 12.
OFF sequence 1
Co=1µF,Ta=-40℃
Figure 11.
Input sequence 1
Co=1µF,Ta=105℃
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
40msec/div
40msec/div
Figure 13.
OFF sequence 1
Co=1µF,Ta=25℃
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Figure 14.
OFF sequence 1
Co=1µF,Ta=105℃
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BDxxHA3MEFJ-LB
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
1msec/div
1msec/div
Figure 16.
Input sequence 2
Co=1µF,Ta=25℃
Figure 15.
Input sequence 2
Co=1µF,Ta=-40℃
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
1msec/div
40msec/div
Figure 18.
OFF sequence 2
Co=1µF,Ta=-40℃
Figure 17.
Input sequence 2
Co=1µF,Ta=105℃
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Datasheet
BDxxHA3MEFJ-LB
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
40msec/div
40msec/div
Figure 20.
OFF sequence 2
Co=1µF,Ta=105℃
7.0
900.0
6.0
800.0
Icc [uA]
Vo [V]
Figure 19.
OFF sequence 2
Co=1µF,Ta=25℃
5.0
700.0
600.0
4.0
500.0
3.0
-40
-15
10
35
60
85
-40
105
10
35
60
85
105
Ta [°C]
Ta [°C]
Figure 21.
Ta-Vo
(Io=0mA)
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Figure 22.
Ta-Icc
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BDxxHA3MEFJ-LB
8.0
1.0
0.8
0.6
IEN [uA]
ISD [uA]
6.0
0.4
4.0
2.0
0.2
0.0
-40
-15
10
35
60
85
0.0
105
-40
-15
10
Ta [°C]
35
60
85
105
12
14
Ta [°C]
Figure 24.
Ta-IEN
Figure 23.
Ta-ISD
(VEN=0V)
5.0
4.0
T.B.D
VO[V]
ISD[µA]
ISD
[uA]
3.0
2.0
1.0
Temp=-40°C
Temp=25°C
Temp=105°C
0.0
0
IO[A]
4
6
8
10
VCC [V]
VCC [V]
Figure 25.
IO-VO
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Figure 26.
Vcc-ISD
(VEN=0V)
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BDxxHA3MEFJ-LB
6.0
4.0
VO[V]
Vo [V]
VO[V]
T.B.D
2.0
Temp=-40°C
Temp=25°C
Temp=105°C
0.0
0
2
4
6
8
10
12
14
VCC [V]
Ta[℃]
Figure 28.
TSD (IO=0mA)
Figure 27.
Vcc-Vo
(Io=0mA)
900.0
6.0
5.0
800.0
Temp=-40°C
Temp=25°C
Temp=105°C
Icc [uA]
700.0
T.B.D
VOVo[V]
[V]
Vo [V]
4.0
3.0
Temp=-40°C
Temp=25°C
Temp=105°C
600.0
2.0
500.0
1.0
0.0
400.0
0
0.2
0.4
0.6
0.8
0
Io [A]
0.2
0.3
Io [A]
Figure 30.
Io-Icc
Figure 29.
OCP
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Datasheet
PSRR[dB]
BDxxHA3MEFJ-LB
IO [A]
Figure 32.
PSRR(IO=0mA)
Figure 31.
Operation Safety area
0.6
0.5
0.5
0.4
Vdrop [V]
Vdrop[V]
Vdrop [V]
0.4
0.3
T.B.D
0.3
0.2
Temp=-40°C
Temp=25°C
Temp=105°C
0.2
0.1
0.1
-40
-15
10
35
60
85
105
0.0
0
Ta [°C]
0.1
0.2
0.3
IO[A]
[A]
Io
Figure 33.
Ta-Vdrop
(VCC=6V, Io=0.3A)
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Figure 34.
Minimum dropout Voltage 1
(VCC=4.5V)
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0.6
0.6
0.5
0.5
0.4
0.4
T.B.D
0.3
Vdrop [V]
Vdrop [V]
BDxxHA3MEFJ-LB
Temp=-40°C
Temp=25°C
Temp=105°C
T.B.D
0.3
Temp=-40°C
Temp=25°C
Temp=105°C
0.2
0.2
0.1
0.1
0.0
0.0
0
0.1
0.2
0
0.3
0.1
0.2
IoIO[A]
[A]
IO [A]
Io
Figure 35.
Minimum dropout Voltage 2
(VCC=6.0V)
Figure 36.
Minimum dropout Voltage 3
(VCC=8.0V)
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Datasheet
BDxxHA3MEFJ-LB
Power Dissipation
◎HTSOP-J8
4.0
Power Dissipation :Pd [W]
⑤3.76W
Measure condition: mounted on a ROHM board,
and IC
Substrate size: 70mm × 70mm × 1.6mm
(Substrate with thermal via)
・ Solder the substrate and package reverse
exposure heat radiation part
3.0
④2.11W
① IC only
θj-a=249.5℃/W
② 1-layer(copper foil are :0mm×0mm)
θj-a=153.2℃/W
③ 2-layer(copper foil are :15mm×15mm)
θj-a=113.6℃/W
④ 2-layer(copper foil are :70mm×70mm)
θj-a=59.2℃/W
⑤ 4-layer(copper foil are :70mm×70mm)
θj-a=33.3℃/W
2.0
③1.10W
1.0
②0.82W
①0.50W
0
0
25
50
75
100
125
150
Ambient 周囲温度:Ta
Temperature
[℃] :Ta [℃]
Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed
temperature limits, and thermal design should allow sufficient margin from the limits.
1. Ambient temperature Ta can be no higher than 105℃.
2. Chip junction temperature (Tj) can be no higher than 150℃.
Chip junction temperature can be determined as follows:
Calculation based on ambient temperature (Ta)
Tj=Ta+θj-a×W
<Reference values>
θj-a: HTSOP-J8 153.2℃/W 1-layer substrate (copper foil density 0mm×0mm)
113.6℃/W 2-layer substrate (copper foil density 15mm×15mm)
59.2℃/W 2-layer substrate (copper foil density 70mm×70mm)
4-layer substrate (copper foil density 70mm×70mm)
33.3℃/W
Substrate size: 70mm×70mm×1.6mm (substrate with thermal via)
Most of the heat loss that occurs in the BDxxHA3MEFJ-LB is generated from the output Pch FET. Power loss is determined
by the total VCC-VO voltage and output current. Be sure to confirm the system input and output voltage and the output
current conditions in relation to the heat dissipation characteristics of the VCC and VO in the design. Bearing in mind that
heat dissipation may vary substantially depending on the substrate employed (due to the power package incorporated in
the BDxxHA3MEFJ-LB make certain to factor conditions such as substrate size into the thermal design.
Power consumption[W] =
Input voltage (VCC) - Output voltage (VO) ×IO(Ave)
Example) Where VCC=5.0V, VO=3.3V, IO(Ave) = 0.1A,
Power consumption[W] = 5.0V - 3.3V ×0.1A
=0.17W
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BDxxHA3MEFJ-LB
Input-to-Output Capacitor
It is recommended that a capacitor is placed nearby pin between Input pin and GND, output pin and GND.
A capacitor, between input pin and GND, is valid when the power supply impedance is high or drawing is long. Also as for
a capacitor, between output pin and GND, the greater the capacity, more sustainable the line regulation and it makes
improvement of characteristics by load change. However, please check by mounted on a board for the actual application.
Ceramic capacitor usually has difference, thermal characteristics and series bias characteristics, and moreover capacity
decreases gradually by using conditions.
For more detail, please be sure to inquire the manufacturer, and select the best ceramic capacitor.
10
Rated Voltage:10V
B characteristics
0
Rated Voltage:10V
B1 characteristics
Capacitance Change [%]
-10
Rated Voltage:6.3V
B characteristics
-20
-30
-40
-50
Rated Voltage:10V
F characteristics
-60
Rated Voltage:4V
X6S characteristics
-70
-80
-90
-100
0
1
2
3
4
DC Bias Voltage [V]
Ceramic capacitor capacity – DC bias characteristics
(Characteristics example)
Equivalent Series Resistance ESR (ceramic capacitor etc.)
Please attach an anti-oscillation capacitor between VO and
GND. Capacitor usually has ESR(Equivalent Series
Resistance), and operates stable in ESR-IO range, showed
right. Generally, ESR of ceramic, tantalum and electronic
capacitor etc. is different for each, so please be sure to check
a capacitor which is going to use, and use it inside the stable
operating region, showed right. Then, please evaluate for the
actual application.
ESR – IO characteristics
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Datasheet
BDxxHA3MEFJ-LB
Evaluation Board Circuit
C3
C7
1
VCC
VO
8
C2
C6
R1
C5
2
FB
N.C
7
GND
N.C
6
R2
C1
VCC
GND
3
U1
SW1
VO
4
N.C.
EN
5
EN
FIN
Evaluation Board Parts List
Designation
R1
R2
R3
R4
R5
R6
C1
C2
C3
Value
43kΩ
8.2kΩ
‐
‐
‐
‐
1µF
‐
‐
Part No.
MCR01PZPZF4302
MCR01PZPZF8201
‐
‐
‐
‐
CM105B105K16A
‐
‐
Company Designation Value
ROHM
C4
‐
ROHM
C5
1µF
‐
C6
‐
C7
‐
‐
C8
‐
‐
C9
‐
KYOCERA
C10
‐
U1
‐
U2
‐
Board Layout
Part No.
‐
CM105X7R105K16AB
Company
‐
KYOCERA
‐
‐
‐
‐
BD00HA3MEFJ-LB
‐
‐
‐
‐
‐
ROHM
‐
EN
GND
CIN
VCC ( VIN )
R1
R2
COUT
VO
・Input capacitor CIN of VCC (VIN) should be placed very close to VCC(VIN) pin as possible, and used broad wiring pattern.
Output capacitor COUT also should be placed close to IC pin as possible. In case connected to inner layer GND plane,
please use several through hole.
・FB pin has comparatively high impedance, and is apt to be effected by noise, so floating capacity should be minimum as
possible. Please be careful in wiring drawing
・Please take GND pattern space widely, and design layout to be able to increase radiation efficiency.
・For output voltage setting
Output voltage can be set by FB pin voltage(0.800V typ.)and external resistance R1, R2.
R1+R2
R2
(The use of resistors with R1+R2=1k to 90kΩ is recommended)
VO = VFB×
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Datasheet
BDxxHA3MEFJ-LB
I/O Equivalent Circuits (Output Voltage Vairable type)
8pin (VCC) / 1pin (VO)
8pin (VCC)
2pin (FB)
5pin (EN)
2pin (FB)
5pin (EN)
2MΩ
1MΩ
1pin (VO)
I/O Equivalent Circuits (Output Voltage Fixed type)
8pin (VCC) / 1pin (VO)
2pin (VO_S)
5pin (EN)
8pin (VCC)
5pin (EN)
2pin (VO_S)
2MΩ
1MΩ
1pin (VO)
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BDxxHA3MEFJ-LB
Operational Notes
(1). Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open
circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection
devices, such as fuses.
(2). Connecting the power supply connector backward
Connecting of the power supply in reverse polarity can damage IC. Take precautions when connecting the power
supply lines. An external direction diode can be added.
(3). Power supply lines
Design PCB layout pattern to provide low impedance GND and supply lines. To obtain a low noise ground and supply
line, separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply
terminals to ICs, connect a capacitor between the power supply and the GND terminal. When applying electrolytic
capacitors in the circuit, not that capacitance characteristic values are reduced at low temperatures.
(4). GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
(5). Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
(6). Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
(7). Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
(8). ASO
When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO.
(9). Thermal shutdown circuit
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is
designed only to shut the IC off to prevent thermal runaway. It is not designed to protect the IC or guarantee its
operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the
operation of this circuit is assumed.
BDxxHA3MEFJ-LB
TSD ON Temperature[℃]
175
(typ.)
Hysteresis Temperature [℃]
15
(typ.)
(10). Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to
stress. Always discharge capacitors after each process or step. Always turn the IC’s power supply off before
connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly
steps as an antistatic measure. Use similar precaution when transporting or storing the IC.
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BDxxHA3MEFJ-LB
(11). Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic
diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC.
The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical
damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the
GND(P substrate) voltage to an input pin, should not be used.
Transistor (NPN)
Resistor
Pin A
Pin B
C
B
Pin B
E
Pin A
N
N
P+
N
P+
P
N
Parasitic
element
P+
P substrate
Parasitic element
GND
B
N
P+
P
N
C
E
P substrate
Parasitic element
GND
GND
GND
Parasitic
element
Other adjacent elements
(12). Ground Wiring Pattern.
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to
change the GND wiring pattern of any external components, either.
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Datasheet
BDxxHA3MEFJ-LB
Physical Dimension Tape and Reel Information
Package Name
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Datasheet
BDxxHA3MEFJ-LB
Revision History
Date
Revision
10.Dec.2013
001
21.Feb.2014
002
Changes
New Release
Delete sentence “and log life cycle” in General Description and Futures (page 1).
Add “Industrial Equipment” in Applications (page 1).
Applied new style (change of the size of the title).
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Datasheet
Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - SS
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - SS
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
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