AP2906EY
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G2
▼ Lower Gate Charge
D1/D2
▼ Capable of 2.5V Gate Drive
G1
S2
▼ Surface mount package
D1/D2
▼ RoHS Compliant & Halogen-Free
SOT-26
BVDSS
20V
RDS(ON)
35mΩ
ID
3
4.7A
S1
Description
D1/D2
AP2906 series are from Advanced Power innovated
design and silicon process technology to achieve the
lowest possible on-resistance and fast switching
performance. It provides the designer with an extreme
efficient device for use in a wide range of power
applications.
The SOT-26 package is widely used for all commercialindustrial applications.
G1
G2
S1
S2
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Parameter
Symbol
.
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
+8
V
4.7
A
3.8
A
20
A
1.25
W
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 4V
3
Drain Current , VGS @ 4V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
100
℃/W
1
201504301
AP2906EY
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
20
-
-
V
VGS=4V, ID=4A
-
27.4
35
mΩ
VGS=2.5V, ID=2A
-
31.5
40
mΩ
0.3
0.5
1
V
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=4A
-
19
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=4A
-
8.2
13
nC
Qgs
Gate-Source Charge
VDS=10V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.3
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
5
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=6Ω
-
23
-
ns
tf
Fall Time
VGS=5V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
560
900
pF
Coss
Output Capacitance
VDS=10V
-
75
-
pF
Crss
Reverse Transfer Capacitance
-
65
-
pF
Min.
Typ.
IS=1A, VGS=0V
-
-
1.2
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
12
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
4
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t ≦5sec ;180℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2906EY
20
20
T A =25 o C
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
V G = 2.0V
12
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
V G = 2.0V
16
ID , Drain Current (A)
ID , Drain Current (A)
16
o
T A = 150 C
8
4
12
8
4
0
0
0
0
1
1
2
2
0
1
2
V DS , Drain-to-Source Voltage (V)
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
1.8
ID=4A
VG=4V
ID=2A
T A =25 ℃
32
.
Normalized RDS(ON)
RDS(ON) (mΩ)
36
1.4
1.0
28
24
0.6
1
2
3
4
5
-100
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I D = 1mA
1.6
T j =150 o C
4
Normalized VGS(th)
IS(A)
6
T j =25 o C
1.2
0.8
2
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2906EY
ID=4A
V DS =10V
5
800
4
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
6
3
600
C iss
400
2
200
1
C oss
C rss
0
0
0
2
4
6
8
10
1
12
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
Fig 8. Typical Capacitance Characteristics
1
10
Operation in this area
limited by RDS(ON)
1
100us
1ms
0.1
10ms
100ms
1s
T A =25 o C
Single Pulse
.
DC
Normalized Thermal Response (Rthja)
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja=180 oC/W
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
16
VG
V DS =5V
ID , Drain Current (A)
12
QG
4.5V
QGS
8
QGD
T j =150 o C
4
T j =25 o C
Charge
o
T j = -55 C
Q
0
0
1
2
3
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP2906EY
1.6
PD, Power Dissipation(W)
ID , Drain Current (A)
8
6
4
2
0
1.2
0.8
0.4
0
25
50
75
100
125
150
0
o
50
100
150
o
T A , Ambient Temperature ( C )
T A , Ambient Temperature( C)
Fig 13. Drain Current v.s. Ambient
Temperature
Fig 14. Total Power Dissipation
80
RDS(ON) (mΩ)
T j =25 o C
60
.
40
2.5V
V GS =4.0V
20
0
2
4
6
8
10
12
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP2906EY
MARKING INFORMATION
Part Number : Z02
Z02SS
Date Code : SS
SS:2004,2008,2012,2016,2020...
SS:2003,2007,2011,2015,2019...
SS:2002,2006,2010,2014,2018...
SS:2001,2005,2009,2013,2017...
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