MCC MCM1206 P-channel power mosfet Datasheet

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omponents
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MCM1206
Features
•
Advanced trench MOSFET process technology
P-Channel
Power MOSFET
Ultra low on-resistance with low gate charge
•
•
•
Halogen free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
•
Moisture Sensitivity Level 1
•
Marking:1206
DFN2020-6J
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
Parameter
Drain-source Voltage
Drain Current-Continuous
Pulsed Drain Current (note1)
Gate-source Voltage
Rating
-12
-6
-20
f8
Unit
V
A
A
V
R©JA
TJ
Thermal Resistance Junction to Ambient(note1)
Operating Junction Temperature
357
-55 to +150
к/W
к
TSTG
Storage Temperature
-55 to +150
к
D
C
A
B
E
L
(1).Repetitive rating:Pluse width limited by junction temperature
N
J
Equivalent Circuit
K
1.DRAIN
G
2.DRAIN
H
F
3.GATE
4.SOURCE
M
5.DRAIN
6.DRAIN
Dimensions
DIM
A
INCHES
MIN
0.028
MM
MAX
.032
MIN
MAX
B
C
0.008REF.
0000
0.002
0.800
0.203REF.
0.000
0.050
D
E
0.076
0.076
0.082
0.082
1.924
1.924
2.076
2.076
F
G
0.031
0.033
0.039
0.041
0.800
1.000
0.850
1.050
H
0.016
---
0.200
0.200
0.400
J
0.008
0.008
K
0.018
0.026
0.460
0.660
L
M
0.026TYP.
0.010
0.014
0.250
0.650TYP.
0.350
N
0.007
0.174
0326
0.013
NOTE
0.700
---
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MCC
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ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
Drain-source breakdown voltage
Gate-source threshold voltage
V(BR)DSS
VGS = 0V, ID =-250µA
-12
VGS(th)
VDS =VGS, ID =-250µA
-0.5
- 0.9
V
Gate-source leakage
IGSS
VDS =0V, VGS =±8V
±100
nA
Zero gate voltage drain current
IDSS
VDS =-8V, VGS =0V
-1
µA
a
Drain-source on-state resistance RDS(on)
Forward transconductance
a
gfs
VGS =-4.5V, ID = -3.5A
30
45
VGS =-2.5V, ID = -3A
40
60
VGS =-1.8V,ID= -2.0A
60
90
VDS =-5V, ID =-4.1A
6
mΩ
S
Dynamic
Input capacitanceb,c
Ciss
b,c
Output capacitance
740
VDS =-4V,VGS =0V,f =1MHz
Coss
Reverse transfer capacitance
b,c
190
Crss
VDS =-4V,VGS =-4.5V,
Total gate charge
b
Gate-source charge
Gate-drain charge
Gate resistance
Rg
b,c
Turn-on delay time
=
f 1MHz
td(on)
b,c
Rise time
tr
b,c
Turn-off Delay time
td(off)
b,c
tf
Fall time
b,c
Turn-on delay time
td(on)
Rise timeb,c
tr
b,c
Turn-off delay time
td(off)
b,c
tf
Fall time
VDD=-4V,
RL=1.2Ω, ID ≈-3.3A,
VGEN=-4.5V,Rg=1Ω
VDD=-4V,
RL=1.2Ω, ID ≈-3.3A,
VGEN=-8V,Rg=1Ω
nC
1.2
ID =-4.1A
Qgd
b,c
4
4.5
.5
VDS =-4V,VGS =-2.5V,
Qgs
b
7
7.8
.8
ID =-4.1A
Qg
b
pF
290
1.6
1.4
7
14
1
13
3
2
35
5
32
4
10
2
5
10
11
1
22
3
1
16
6
2
Ω
ns
Drain-source body diode characteristics
Continuous source-drain diode current
Pulse diode forward current
a
Body ciode voltage
IS
-6
ISM
-20
VSD
IF=-3.3A
-1.2
A
V
Note :
a. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
b. Guaranteed by design, not subject to production testing.
c. These parameters have no way to verify.
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2016/02/03
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Output Characteristics
Transfer Characteristics
-16
-5
VDS=-3V
-4
ID
(A)
VGS= -4.5V、 -4V、 -3.5V、-3V、-2.5V
ID
VGS=-2V
DRAIN CURRENT
DRAIN CURRENT
(A)
-12
-8
VGS=-1.5V
-3
-2
Ta=100℃
Ta=25℃
Pulsed
Pulsed
-4
-1
-0
-0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE
VDS
-0
-0.0
-4
(V)
-0.5
-1.0
-1.5
GATE TO SOURCE VOLTAGE
VGS
-2.0
(V)
RDS(ON) —— VGS
RDS(ON) —— ID
180
200
Ta=25℃
(mΩ)
150
RDS(ON)
120
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(mΩ)
Pulsed
VGS=-1.8V
60
VGS=-2.5V
100
ID=-3.3A
Ta=100℃
50
Pulsed
Ta=25℃
VGS=-4.5V
0
-0
-2
-4
-6
-8
DRAIN CURRENT
ID
-10
Pulsed
0
-12
-0
(A)
-2
-10
(V)
-0.8
ID=-250uA
THRESHOLD VOLTAGE
VTH
IS (A)
SOURCE CURRENT
Ta=100℃
Ta=25℃
Pulsed
-0.4
-0.8
-1.2
SOURCE TO DRAIN VOLTAGE
Revision: A
(V)
-1.0
Pulsed
-0.1
-6
V GS
Threshold Voltage
IS —— VSD
-1
-4
GATE TO SOURCE VOLTAGE
-1.6
-0.6
-0.4
-0.2
-0.0
25
-2.0
VSD (V)
50
75
AMBIENT TEMPERATURE
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100
Ta
125
(℃ )
2016/02/03
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Ordering Information :
Device
Packing
Tape&Reel:3Kpcs/Reel
Part Number-TP
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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