Vishay B380C800G-E4 Glass passivated single-phase bridge rectifier Datasheet

B40C800G, B80C800G, B125C800G, B250C800G, B380C800G
www.vishay.com
Vishay Semiconductors
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
+
• Ideal for printed circuit boards
~
• High case dielectric strength
~
e4
• High surge current capability
~
+
−
~
• Typical IR less than 0.1 μA
−
• Solder dip 275 °C max. 10 s, per JESD 22-B106
Case Style WOG
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
TYPICAL APPLICATIONS
WOG
IF(AV)
0.9 A
VRRM
65 V, 125 V, 200 V, 400 V, 600 V
IFSM
45 A
IR
10 μA
VF at IF = 0.9 A
1.0 V
TJ max.
125 °C
Diode variations
Quad
General purpose use in AC/DC bridge full wave rectification
for power supply, adapter, charger, lighting ballaster on
consumers, and home appliances applications.
MECHANICAL DATA
Case: WOG
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated
J-STD-002 and JESD22-B102
leads,
solderable
per
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
SYMBOL
B40
C800G
B80
C800G
B125
C800G
B250
C800G
B380
C800G
UNIT
Maximum repetitive peak reverse voltage
VRRM
65
125
200
400
600
V
Maximum RMS input voltage R- and C-load
VRMS
40
80
125
250
380
V
PARAMETER
Maximum average forward output current
for free air operation at TA = 45 °C
R- and L-load
C-load
Maximum non-repetitive peak voltage
0.9
IF(AV)
VRSM
A
0.8
100
200
350
600
1000
V
Maximum DC blocking voltage
VDC
65
125
200
400
600
V
Maximum peak working voltage
VRWM
90
180
300
600
900
V
Maximum repetitive peak forward surge current
IFRM
10
Peak forward surge current single sine-wave on rated load
IFSM
45
A
I2t
10
A2s
Rating for fusing at TJ = 125 °C (t < 100 ms)
Minimum series resistor C-load at VRMS = ± 10 %
+ 50 %
- 10 %
Maximum load capacitance
Operating junction temperature range
Storage temperature range
A
RT
1.0
2.0
4.0
8.0
12

CL
5000
2500
1000
500
200
μF
TJ
- 40 to + 125
°C
TSTG
- 40 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage drop per diode
0.9 A
Maximum reverse current at rated
repetitive peak voltage per diode
Revision: 08-Jul-13
SYMBOL
B40
C800G
B80
C800G
B125
C800G
B250
C800G
B380
C800G
UNIT
VF
1.0
V
IR
10
μA
Document Number: 88534
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B40C800G, B80C800G, B125C800G, B250C800G, B380C800G
www.vishay.com
Vishay Semiconductors
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance (1)
B40
C800G
B80
C800G
B125
C800G
RJA
36
RJL
11
B250
C800G
B380
C800G
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB at 0.375" (9.5 mm) lead lengths with 0.22" x 0.22"
(5.5 mm x 5.5 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
B380C800G-E4/51
1.12
51
100
Plastic bag
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50
50 to 60 Hz
Resistive or Inductive Load
0.8
0 - 10 µF
10 - 100 µF
> 100 µF
Capacitive Load
0.6
0.4
P.C.B.
0.375"
(9.5 mm)
0.2
Copper Pads
0.22 x 0.22" (5.5 x 5.5 mm)
Peak Forward Surge Current (A)
Bridge Output Full Wave Rectified
Current Average (A)
1.0
40
30
20
10
1.0 Cycle
0
0
0
20
40
60
80
100
120
140
100
10
1
Ambient Temperature (°C)
Number of Cycles at 50 Hz
Fig. 1 - Derating Curves Output Rectified Current for
B40C800G...B125C800G
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Instantaneous Forward Surge Current (A)
1.0
Bridge Output Full Wave Rectified
Current Average (A)
TJ = 25 °C
10 ms Single Sine-Wave
50 to 60 Hz
Resistive or Inductive Load
0.8
Capacitive Load
0 - 10 µF
10 - 100 µF
> 100 µF
0.6
0.4
P.C.B.
0.375"
(9.5 mm)
0.2
Copper Pads
0.22 x 0.22" (5.5 x 5.5 mm)
0
0
20
40
60
80
100
120
140
100
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
10
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 2 - Derating Curves Output Rectified Current for
B250C800G...B380C800G
Fig. 4 - Typical Forward Characteristics Per Diode
Revision: 08-Jul-13
Document Number: 88534
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B40C800G, B80C800G, B125C800G, B250C800G, B380C800G
www.vishay.com
Vishay Semiconductors
100
1
Junction Capacitance (pF)
Instantaneous Reverse Current (µA)
10
TJ = 100 °C
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
TJ = 25 °C
1
0.1
0.01
0
20
40
60
80
100
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.160 (4.1)
1.0 (25.4) MIN.
0.032 (0.81)
0.028 (0.71)
0.348 (8.84)
0.308 (7.82)
0.060 (1.52)
0.020 (0.51)
0.220 (5.6)
0.180 (4.6)
0.220 (5.6)
0.180 (4.6)
Revision: 08-Jul-13
Document Number: 88534
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000
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