Littelfuse MG12150W-XN2MM Ac motor control Datasheet

Power Module
1200V 150A IGBT Module
MG12150W-XN2MM
RoHS
Features
• High level of integration
• IGBT CHIP(Trench+Field
Stop technology)
3
• L
ow saturation voltage
and positive temperature
coefficient
• F
ast switching and short
tail current
• F
ree wheeling diodes
with fast and soft reverse
recovery
• S
olderable pins for PCB
mounting
• T
emperature sense
included
Applications
• AC motor control
• Motion/servo control
• Inverter and power
supplies
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max. Junction Temperature
TJ max)
Max
Unit
150
°C
TJ op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Md
Mounting Torque
AC, t=1min
3000
V
250
Recommended (M5)
Weight
2.5
5
N·m
300
g
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Values
Unit
TJ=25°C
1200
V
±20
V
TC=25°C
200
A
TC=80°C
150
A
tp=1ms
300
A
625
W
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
MG12150W-XN2MM
TJ=25°C
1200
V
TC=25°C
200
A
TC=80°C
150
A
tp=1ms
300
A
TJ =125°C, t=10ms, VR=0V
4350
A 2s
240
1
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Module
1200V 150A IGBT Module
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
Unit
Gate - Emitter Threshold Voltage
VCE=VGE, IC=6.0mA
5.0
5.8
6.5
V
Collector - Emitter
IC=150A, VGE=15V, TJ=25°C
1.7
Saturation Voltage
IC=150A, VGE=15V, TJ=125°C
1.9
IGBT
VGE(th)
VCE(sat)
IICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
1
mA
VCE=1200V, VGE=0V, TJ=125°C
10
mA
400
nA
VCE=0V, VGE=±15V, TJ=125°C
VCE=25V, VGE=0V, f =1MHz
Rise Time
td(off)
Turn - off Delay Time
IC=150A
tf
Fall Time
VGE=±15V
VCC=600V
RG =2.4Ω
Inductive Load
Turn - on Energy
Turn - off Energy
ISC
Short Circuit Current
RthJC
-400
VCE=600V, IC=150A , VGE=±15V
tr
Eoff
V
VCE=1200V, VGE=0V, TJ=25°C
Turn - on Delay Time
Eon
V
5.0
Ω
1.4
μC
10.5
nF
0.4
nF
TJ=25°C
260
ns
TJ=125°C
290
ns
TJ=25°C
30
ns
TJ=125°C
50
ns
TJ=25°C
420
ns
TJ=125°C
520
ns
TJ=25°C
70
ns
TJ=125°C
90
ns
TJ=25°C
12
mJ
TJ=125°C
16
mJ
TJ=25°C
11
mJ
TJ=125°C
14.5
mJ
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V
600
Junction-to-Case Thermal Resistance (Per IGBT)
A
0.20
K/W
Diode
VF
Forward Voltage
tRR
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
Erec
Reverse Recovery Energy
RthJCD
IF=150A, VGE=0V, TJ =25°C
1.65
V
IF=150A, VGE=0V, TJ =125°C
1.65
V
IF=150A, VR=600V
diF/dt=3600A/µs
TJ=125°C
350
ns
160
A
13.5
mJ
Junction-to-Case Thermal Resistance (Per Diode)
0.36
K/W
Max
Unit
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
R25
Resistance
Tc=25°C
B25/50
MG12150W-XN2MM
241
2
Min
Typ
5
KΩ
3375
K
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Module
1200V 150A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
Figure 2: Typical Output Characteristics
for IGBT Inverter
300
300
VGE =19V
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE = 9V
VGE =15V
240
Tj =25°C
180
IC (A)
IC (A)
240
120
180
120
Tj =125°C
60
60
0
0
0.5
1.0
1.5 2.0
VCE˄V˅
2.5
3.0
0
3.5
Figure 3: T
ypical Transfer Characteristics
for IGBT Inverter
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE˄V˅
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
300
35
VCE =20V
VCE=600V
IC=150A
VGE=±15V
Tj =125°C
30
240
25
Tj =25°C
180
120
Eon Eoff (mJ)
IC (A)
TJ =125°C
Tj =125°C
Eon
20
15
Eoff
10
60
5
0
5
6
7
9
8
VGE˄V˅
10
11
0
12
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
Eon Eoff (mJ)
30
2
4
6
8
10
12
14
16
Figure 6: Reverse Biased Safe Operating Area
for IGBT Inverter
350
VCE=600V
RG=2.4Ω
VGE=±15V
Tj =125°C
300
Eon
250
200
20
IC (A)
40
0
Eoff
150
RG=2.4Ω
VGE=±15V
Tj =125°C
100
10
50
0
0
MG12150W-XN2MM
50
100
150
200
IC˄A˅
250
0
300
242
3
0
200 400 600 800 1000 1200 1400
VCE˄V˅
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Module
1200V 150A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
Figure 8: Switching Energy vs. Gate Resistort
for Diode Inverter
20.0
240
16.0
Erec (mJ)
300
IF (A)
180
120
IF=150A
VCE=600V
Tj =125°C
12.0
8.0
Tj =125°C
60
4.0
Tj =25°C
0
0
1.2
VF˄V˅
0.6
1.8
0
2.4
2
4
6
8
10
12
14
16
RG˄Ω˅
Figure 9: Switching Energy vs. Forward Current
for Diode Inverter
Figure 10: Transient Thermal Impedance of
Diode and IGBT Inverter
1
20.0
RG=2.4Ω
VCE=600V
Tj =125°C
Diode
ZthJC (K/W)
16.0
Erec (mJ)
0
12.0
8.0
IGBT
0.1
4.0
0
0
50
100
150
IF (A)
200
250
0.01
0.001
300
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure 11: NTC Characteristics
100000
IFGE
=25=15V
A
V
VCE=600V
TVj =125°C
10000
R (¡)
TVj =25°C
R
TVj =125°C
1000
100
0
MG12150W-XN2MM
20
40 60 80 100 120 140 160
TC˄°C˅
243
4
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Module
1200V 150A IGBT Module
Circuit Diagram
Part Marking System
Part Numbering System
MG12150 W-X N2MM
ASSEMBLY SITE
PRODUCT TYPE
M: Power Module
WAFER TYPE
MODULE TYPE
G: IGBT
VOLTAGE RATING
12: 1200V
PACKAGE TYPE
CURRENT RATING
Space
reserved
for QR
code
MG12150W-XN2MM
CIRCUIT TYPE
X:X
LOT NUMBER
W: Package W
150: 150A
Packing Options
Part Number
Marking
Weight
Packing Mode
M.O.Q
MG12150W-XN2MM
MG12150W-XN2MM
300g
Bulk Pack
20
MG12150W-XN2MM
244
5
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
Power Module
1200V 150A IGBT Module
Dimensions-Package W
Ø
Dimensions (mm)
MG12150W-XN2MM
245
6
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
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