MSRT100120(A)D thru MSRT100160(A)D Silicon Standard Recovery Diode VRRM = 1200 V - 1600 V IF(AV) = 100 A Features • High Surge Capability • Types from 1200 V to 1600 V VRRM Three Tower Package • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MSRT100120(A)D MSRT100140(A)D MSRT100160(A)D Unit Repetitive peak reverse voltage VRRM 1200 1400 1600 V RMS reverse voltage VRMS 848 990 1131 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 1200 -55 to 150 -55 to 150 1400 -55 to 150 -55 to 150 1600 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions MSRT100120(A)D MSRT100140(A)D MSRT100160(A)D Unit Average forward current (per leg) IF(AV) TC = 140 °C 100 100 100 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 2000 2000 2000 A Maximum instantaneous forward voltage (per leg) VF IFM = 100 A, Tj = 25 °C 1.1 1.1 1.1 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 10 10 10 μA Tj = 150 °C 5 5 5 mA 0.45 0.45 0.45 °C/W Parameter Thermal characteristics Maximum thermal resistance, junction - case (per leg) RΘjc www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 MSRT100120(A)D thru MSRT100160(A)D www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2 MSRT100120(A)D thru MSRT100160(A)D Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3