ON NTSV20U100 Very low forward voltage trench-based schottky rectifier Datasheet

NTSV20U100CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.485 V at IF = 5 A
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Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN CONNECTIONS
1
2, 4
3
4
TO−220AB
CASE 221A
STYLE 6
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
1
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
2
3
MARKING DIAGRAM
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
AY WW
TSV20U10CG
AKA
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
A
Y
WW
AKA
G
= Assembly Location
= Year
= Work Week
= Polarity Designator
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 2
1
Publication Order Number:
NTSV20U100CT/D
NTSV20U100CT
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 115°C)
Per device
Per diode
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 110°C)
Per device
Per diode
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
IF(AV)
A
20
10
IFRM
A
40
20
IFSM
100
A
TJ
−40 to +150
°C
Storage Temperature
Tstg
−40 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Operating Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Symbol
Value
Unit
RqJC
RqJA
2.0
70
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
vF
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(VR = 70 V, TJ = 125°C)
IR
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
Typ
Max
0.520
0.658
−
0.98
0.485
0.593
−
0.82
9.6
7.0
63.2
18.0
Unit
V
mA
mA
800
25
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device
NTSV20U100CTG
Package
Shipping
TO−220AB
(Pb−Free)
50 Units / Rail
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2
NTSV20U100CT
TYPICAL CHARACTERISTICS
100
TA = 150°C
IR, INSTANTANEOUS REVERSE
CURRENT (mA)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 25°C
10
TA = 125°C
1
0
0.2
0.4
0.8
0.6
1.0
1.2
1.4
1.6
TA = 125°C
1
0.1
0.001
1.8
30
40
50
60
70
80
90
100
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Typical Reverse Characteristics
20
IF(AV), AVERAGE FORWARD
CURRENT (A)
1000
100
0.1
1
10
15
Square Wave
10
5
0
20
40
60
80
100
120
140
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 3. Typical Junction Capacitance
Figure 4. Current Derating per Leg
35
dc
30
25
Square Wave
20
15
10
5
20
40
60
80
100
120
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
20
RqJC = 1.3°C/W
0
RqJC = 1.3°C/W
dc
0
100
40
0
20
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
TJ = 25°C
10
TA = 25°C
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
10,000
C, JUNCTION CAPACITANCE (pF)
10
0.01
0.1
IF(AV), AVERAGE FORWARD CURRENT (A)
TA = 150°C
140
IPK/IAV =
20
18
IPK/IAV = 10
IPK/IAV = 5
16
14
Square Wave
12
10
8
dc
6
4
2
0
TJ = 150°C
0
2
4
6
8
10
12
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
14
NTSV20U100CT
TYPICAL CHARACTERISTICS
R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W)
10
1 50%
20%
10%
P(pk)
0.1 5%
0.01
t1
2%
1%
0.000001
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 7. Typical Transient Thermal Response
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4
10
100
1000
NTSV20U100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
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NTSV20U100CT/D
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