Diodes DMN5010VAK-13A Dual n-channel enhancement mode mosfet Datasheet

DMN5/L06VK/L06VAK/010VAK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected up to 2kV
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT563
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
D2
G1
S1
D2
S1
G1
S2
G2
D1
G2
S2
D1
ESD protected up to 2kV
DMN5L06VK
SOT563
Top View
DMN5L06VAK
DMN5010VAK
Ordering Information (Note 4)
Part Number
DMN5L06VK-7
DMN5L06VK-7A
DMN5L06VK-13
DMN5L06VK-13A
DMN5L06VAK-7
DMN5L06VAK-7A
DMN5L06VAK-13
DMN5L06VAK-13A
DMN5010VAK-7
DMN5010VAK-7A
DMN5010VAK-13
DMN5010VAK-13A
Notes:
Case
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
Packaging
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
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DMN5/L06VK/L06VAK/010VAK
Marking Information (Note 5 & 6)
DMN5L06VK-7/-13 (Note 5)
D1
G2
S2
G1
S2
S1
Date Code Key
Year
2006
Code
T
Month
Code
Notes:
4
S2
D2
Jan
1
KAB= DMN5L06VK Product Type
Marking Code
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
YM
S1
G1
D2
1
2
3
DMN5L06VAK-7A/-13A (Note 6)
DMN5010VAK-7A/-13A (Note 6)
G2
6
5
4
D1
S2
G2
D2
xxx = Product Type Marking Code:
KAE or KAE or KAC
YM = Date Code Marking
Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
YM
xxx
YM
xxx
G1
5
G2
KAB
DMN5L06VAK-7/-13 (Note 5)
DMN5010VAK-7/-13 (Note 5)
D1
6
D1
YM
KAB
S1
DMN5L06VK-7A/-13A (Note 6)
G1
S1
D2
1
2
3
~
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
~
D
E
F
G
H
I
J
K
L
M
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180°rotated, or mixed (both ways).
6. Part number with suffix 7A and 13A designates devices marked with a Pin 1 indicator. There is no other difference between both devices.
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
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DMN5/L06VK/L06VAK/010VAK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
50
V
Drain-Gate Voltage RGS  1.0MΩ
VDGR
50
V
Gate-Source Voltage
Continuous
Pulsed
VGSS
20
40
V
Drain Current (Note 7)
Continuous
Pulsed
ID
IDM
280
1.5
mA
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
Electrical Characteristics
Symbol
PD
RθJA
TJ, TSTG
Value
250
500
-55 to +150
Unit
mW
C/W
C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol
Min
Typ
BVDSS
50
—
—
V
VGS = 0V, ID = 10µA
IDSS
—
—
60
nA
VDS = 50V, VGS = 0V
IGSS
—
—
1
500
50
µA
nA
nA
VGS = ±12V, VDS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
VGS(TH)
0.49
0.30
—
1.0
1.2
V
VDS = VGS, ID = 250µA
RDS(ON)
—
—
—
—
—
—
3.0
2.5
2.0
Ω
VGS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
ID(ON)
0.5
1.4
—
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
|Yfs|
200
—
—
mS
Source-Drain Diode Forward Voltage
VSD
0.5
—
1.4
V
Ciss
—
—
50
pF
Output Capacitance
Coss
—
—
25
pF
Reverse Transfer Capacitance
Crss
—
—
5.0
pF
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TC = +25°C
Gate-Body Leakage
Max
Unit
Test Condition
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
@TJ = +25°C
@TJ = +0°C to +85°C (Note 9)
Static Drain-Source On-Resistance
On-State Drain Current
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Notes:
VDS = 25V, VGS = 0V
f = 1.0MHz
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN5/L06VK/L06VAK/010VAK
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DMN5/L06VK/L06VAK/010VAK
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
RDS(on), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE ()
10
0
-50
1
0
75 100 125
-25
25
50
0
(oC))
Tch, CHANNEL TEMPERATURE (癈
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
150
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
RDS(on), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE ()
RDS(on), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE ()
10
TA = 25°C
Pulsed
ID = 280mA
1
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
VGS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
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IDR, REVERSE DRAIN CURRENT (A)
RDS(on), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE ( )
VGS = 10V
Pulsed
ID = 280mA
IDR, REVERSE DRAIN CURRENT (A)
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
PD, POWER DISSIPATION (mW)
250
200
150
100
50
0
-50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Fig. 11 Derating Curve - Total
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
150
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT563
A
B
SOT563
Dim Min
Max Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
C
D
G
M
K
H
L
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT563
C2
C2
Dimensions
Z
Z
G
X
Y
C1
C2
C1
G
Y
Value
(in mm)
2.2
1.2
0.375
0.5
1.7
0.5
X
DMN5/L06VK/L06VAK/010VAK
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Copyright © 2017, Diodes Incorporated
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