NRVTS560ETFS, NRVTS560ETFSWF Exceptionally Low Leakage Trench-based Schottky Rectifier www.onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • • Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Wettable Flanks (WF in PM Suffix) Option Available for Enhanced Automated Optical Inspection (AoI) These are Pb−Free and Halide−Free Devices Typical Applications • Switching Power Supplies including Wireless, Smartphone and • • • • • Notebook Adapters High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation Automotive LED Lighting • • September, 2016 − Rev. 0 5−8 MARKING DIAGRAM 1 WDFN8 (m8FL) CASE 511AB XXXX A Y WW G 1 A A A NC XXXX AYWWG G C C C C = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements Mass Approximately 25 mg © Semiconductor Components Industries, LLC, 2015 1, 2, 3 (Note: Microdot may be in either location) Mechanical Characteristics: • • • • SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 60 VOLTS 1 See detailed ordering, marking and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: NRVTS560ETFS/D NRVTS560ETFS, NRVTS560ETFSWF MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 Average Rectified Forward Current (Rated VR, TC = 168°C) IF(AV) 5.0 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 167°C) IFRM 10 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 120 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C EAS 50 mJ Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) V ESD Rating (Human Body Model) 3A ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Max Unit RθJC 2.6 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 1) (iF = 2.5 Amps, TJ = 25°C) (iF = 5.0 Amps, TJ = 25°C) Typ Max 0.48 0.54 − 0.68 0.40 0.50 − 0.65 − 2.2 50 5 vF (iF = 2.5 Amps, TJ = 125°C) (iF = 5.0 Amps, TJ = 125°C) Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Unit V iR mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NRVTS560ETFS, NRVTS560ETFSWF TYPICAL CHARACTERISTICS iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C TA = 150°C 10 TA = 125°C 1 TA = 85°C TA = 25°C TA = −55°C 0.1 IR, INSTANTANEOUS REVERSE CURRENT (A) 0 0.1 0.2 0.3 0.4 10 TA = 150°C TA = 125°C 1 TA = 85°C TA = 25°C TA = −55°C 0.1 0.5 0.6 0.7 0.8 0.9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.0 1.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−01 1.E−01 TA = 175°C 1.E−02 TA = 150°C TA = 150°C TA = 125°C 1.E−03 TA = 85°C 1.E−04 TA = 175°C 1.E−02 TA = 125°C 1.E−03 TA = 85°C 1.E−04 1.E−05 TA = 25°C 1.E−06 TA = 25°C 1.E−05 1.E−06 1.E−07 10 15 20 25 30 35 40 45 50 55 60 10 15 20 25 30 35 40 45 50 55 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics TJ = 25°C 100 10 0.2 5 VR, INSTANTANEOUS REVERSE VOLTAGE (V) IF(AV), AVERAGE FORWARD CURRENT (A) 5 1000 C, JUNCTION CAPACITANCE (pF) TA = 175°C IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 2 20 9 DC 8 7 Square Wave 6 5 4 3 RqJC = 2.6°C/W 2 1 0 100 125 150 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Device www.onsemi.com 3 60 175 NRVTS560ETFS, NRVTS560ETFSWF TYPICAL CHARACTERISTICS IPK/IAV = 20 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 14 IPK/IAV = 10 12 10 8 6 IPK/IAV = 5 4 Square Wave 2 dc 0 0 2 1 3 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation R(t) (C/W) 10 1 50% (DUTY CYCLE) 20% 10% 5% 2% 0.1 Assumes 25°C ambient and soldered to a 650 mm2 − 1 oz copper pad on PCB 1% SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (s) Figure 8. Typical Thermal Response, Junction−to−Ambient DEVICE ORDERING INFORMATION Marking Package Shipping† NRVTS560ETFSTAG T560 m8FL (Pb−Free) 1500 / Tape & Reel NRVTS560ETFSWFTAG T56W m8FL (Pb−Free) 1500 / Tape & Reel NRVTS560ETFSWG T560 m8FL (Pb−Free) 5000 / Tape & Reel NRVTS560ETFSWFTWG T56W m8FL (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 NRVTS560ETFS, NRVTS560ETFSWF PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A B D1 2X 0.20 C 8 7 6 5 4X q E1 E c 1 2 3 4 A1 TOP VIEW 0.10 C A 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 6X C e SEATING PLANE DETAIL A 8X e/2 L 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 0.65 PITCH PACKAGE OUTLINE K MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.80 0.70 0.75 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* 1 E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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