TI1 LMV226UR/NOPB Rf power detector for cdma and wcdma Datasheet

LMV225, LMV226, LMV228
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SNWS013L – AUGUST 2003 – REVISED MARCH 2013
LMV225/LMV226/LMV228 RF Power Detector for CDMA and WCDMA
Check for Samples: LMV225, LMV226, LMV228
FEATURES
DESCRIPTION
•
•
•
•
The LMV225/LMV226/LMV228 are 30 dB RF power
detectors intended for use in CDMA and WCDMA
applications. The device has an RF frequency range
from 450 MHz to 2 GHz. It provides an accurate
temperature and supply compensated output voltage
that relates linearly to the RF input power in dBm.
The circuit operates with a single supply from 2.7V to
5.5V. The LMV225/LMV226/LMV228 have an
integrated filter for low-ripple average power detection
of CDMA signals with 30 dB dynamic range.
Additional filtering can be applied using a single
external capacitor.
1
2
•
•
30 dB Linear in dB Power Detection Range
Output Voltage Range 0.2 to 2V
Logic Low Shutdown
Multi-Band Operation from 450 MHz to 2000
MHz
Accurate Temperature Compensation
Packages:
– DSBGA Thin 1.0 mm x 1.0 mm x 0.6 mm
– DSBGA Ultra Thin 1.0 mm x 1.0 mm x 0.35
mm
– WSON 2.2 mm x 2.5 mm x 0.8 mm
– (LMV225 and LMV228)
APPLICATIONS
•
•
•
•
CDMA RF Power Control
WCDMA RF Power Control
CDMA2000 RF Power Control
PA Modules
The LMV225 has an RF power detection range from
–30 dBm to 0 dBm and is ideally suited for direct use
in
combination
with
resistive
taps.
The
LMV226/LMV228 have a detection range from –15
dBm to 15 dBm and are intended for use in
combination with a directional coupler. The LMV226
is equipped with a buffered output which makes it
suitable for GSM, EDGE, GPRS and TDMA
applications.
The device is active for Enable = HI, otherwise it is in
a low power consumption shutdown mode. During
shutdown the output will be LOW. The output voltage
ranges from 0.2V to 2V and can be scaled down to
meet ADC input range requirements.
The LMV225/LMV226/LMV228 power detectors are
offered in the thin 1.0 mm x 1.0 mm x 0.6 mm
DSBGA package and the ultra thin 1.0 mm x 1.0 mm
x 0.35 mm DSBGA package. The LMV225 and the
LMV228 are also offered in the 2.2 mm x 2.5 mm x
0.8 mm WSON package.
Typical Application
RF
ANTENNA
ANTENNA
RF
PA
R1
PA
VDD
1.8 k:
C
100 pF
50:
VDD
LMV225
C
100 pF
RFIN/EN
OUT
R2
ENABLE
RFIN/EN
10 k:
GND
OUT
ENABLE
R2
10 k:
Figure 1. LMV225
LMV226/
LMV228
GND
Figure 2. LMV226/LMV228
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2003–2013, Texas Instruments Incorporated
LMV225, LMV226, LMV228
SNWS013L – AUGUST 2003 – REVISED MARCH 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1) (2)
Supply Voltage
VDD - GND
ESD Tolerance
6.0V Max
(3)
Human Body Model
2000V
Machine Model
200V
−65°C to 150°C
Storage Temperature Range
Junction Temperature
(4)
150°C Max
Mounting Temperature, Infrared or convection (20 sec)
Tin/Lead
235°C
Lead-Free
260°C
(1)
(2)
(3)
(4)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not specified. For specifications and the test conditions, see
the Electrical Characteristics.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
Human body model: 1.5 kΩ in series with 100 pF. Machine model, 0Ω in series with 100 pF.
The maximum power dissipation is a function of TJ(MAX) , θJA and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly into a PC board
OPERATING RATINGS
(1)
Supply Voltage
2.7V to 5.5V
−40°C to +85°C
Temperature Range
RF Frequency Range
(1)
2
450 MHz to 2 GHz
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not specified. For specifications and the test conditions, see
the Electrical Characteristics.
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SNWS013L – AUGUST 2003 – REVISED MARCH 2013
2.7 DC AND AC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all limits are specified to VDD = 2.7V; TJ = 25°C. Boldface limits apply at temperature extremes.
Symbol
IDD
Parameter
Condition
Supply Current
Active Mode: RFIN/EN = VDD
(DC), No RF Input Power
Present
Min
Typ
Max
LMV225
4.8
7
8
LMV226
4.9
6.2
8
LMV228
4.9
6.2
8
0.44
4.5
μA
0.8
V
Shutdown: RFIN/EN = GND (DC), No RF Input
Power Present
VLOW
EN Logic Low Input Level
VHIGH
EN Logic High Input Level
ton
Turn-on-Time
tr
IEN
PIN
(2)
Rise Time
(3)
No RF Input Power Present,
Output Loaded with 10 pF
(4)
LMV225
2.1
LMV226
1.2
LMV228
1.7
Step from no Power to
0 dBm Applied, Output
Loaded with 10 pF
LMV225
4.5
Step from no Power to
15 dBm Applied, Output
Loaded with 10 pF
LMV226
1.8
LMV228
4.8
LMV225
LMV226
LMV228
(1)
(2)
(3)
(4)
(5)
μs
μs
1
(5)
mA
V
Current into RFIN/EN Pin
Input Power Range
Units
1.8
(2)
(1)
μA
−30
0
dBm
−43
−13
dBV
−15
15
dBm
−28
2
dBV
−15
15
dBm
−28
2
dBV
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
All limits are specified by design or statistical analysis
Turn-on time is measured by connecting a 10 kΩ resistor to the RFIN/EN pin. Be aware that in the actual application on the front page,
the RC-time constant of resistor R2 and capacitor C adds an additional delay.
Typical values represent the most likely parametric norm.
Power in dBV = dBm + 13 when the impedance is 50Ω.
Copyright © 2003–2013, Texas Instruments Incorporated
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2.7 DC AND AC ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise specified, all limits are specified to VDD = 2.7V; TJ = 25°C. Boldface limits apply at temperature extremes. (1)
Symbol
Parameter
Logarithmic Slope
Condition
(6)
900 MHz
1800 MHz
1900 MHz
2000 MHz
Logarithmic Intercept
(6)
900 MHz
1800 MHz
1900 MHz
2000 MHz
VOUT
Output Voltage
No RF Input Power Present
Min
LMV225
44.0
LMV226
44.5
LMV228
DSBGA
44.0
LMV228 WSON
48.5
LMV225
39.4
LMV226
41.6
LMV228
DSBGA
41.9
LMV228 WSON
47.4
LMV225
38.5
LMV226
41.2
LMV228
DSBGA
41.6
LMV228 WSON
46.6
LMV225
38.5
LMV226
41.0
LMV228
DSBGA
41.2
45.4
−45.5
LMV226
−24.5
LMV228
DSBGA
−27.2
LMV228 WSON
−23.7
LMV225
−46.6
LMV226
−25.1
LMV228
DSBGA
−28.2
LMV228 WSON
−23.8
LMV225
−46.3
LMV226
−24.9
LMV228
DSBGA
−28.0
LMV228 WSON
−23.7
LMV225
−46.7
LMV226
−24.7
LMV228
DSBGA
−28.0
LMV228 WSON
-23.6
LMV225
214
350
LMV226
223
350
228
350
LMV228
LMV226 Only
4.5
ROUT
Output Impedance
LMV225/LMV228 only, no RF Input Power
Present
Units
mV/dB
LMV225
Output Current Sourcing/Sinking
4
Max
LMV228 WSON
IOUT
(6)
Typ
dBm
5.3
19.8
mV
mA
29
34
kΩ
Device is set in active mode with a 10 kΩ resistor from VDD to RFIN/EN. RF signal is applied using a 50Ω RF signal generator AC
coupled to the RFIN/EN pin using a 100 pF coupling capacitor.
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SNWS013L – AUGUST 2003 – REVISED MARCH 2013
2.7 DC AND AC ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise specified, all limits are specified to VDD = 2.7V; TJ = 25°C. Boldface limits apply at temperature extremes. (1)
Symbol
en
Parameter
Condition
Min
RF Input = 1800 MHz, −10 dBm for LMV225
and 5 dBm for LMV226/LMV228, Measured at
10 kHz
Output Referred Noise
Variation Due to Temperature
Typ
nV/√Hz
LMV225
+0.64
−1.07
900 MHz, RFIN = 15 dBm
Referred to 25°C
LMV226
+0.05
−0.02
LMV228
DSBGA
+0.22
−0.36
LMV228 WSON
+0.87
−0.87
1800 MHz, RFIN = 0 dBm
Referred to 25°C
LMV225
+0.09
−0.86
1800 MHz, RFIN = 15 dBm
Referred to 25°C
LMV226
+0.07
−0.10
LMV228
DSBGA
+0.29
−0.57
LMV228 WSON
+1.04
−1.23
1900 MHz, RFIN = 0 dBm
Referred to 25°C
LMV225
+0
−0.69
1900 MHz, RFIN = 15 dBm
Referred to 25°C
LMV226
+0
−0.10
LMV228
DSBGA
+0.23
−0.64
LMV228 WSON
+1.05
−1.45
2000 MHz, RFIN = 0 dBm
Referred to 25°C
LMV225
+0
−0.86
2000 MHz, RFIN = 15 dBm
Referred to 25°C
LMV226
+0
−0.29
LMV228
DSBGA
+0.27
−0.65
LMV228 WSON
+1.04
−2.02
Product Folder Links: LMV225 LMV226 LMV228
Units
700
900 MHz, RFIN = 0 dBm
Referred to 25°C
Copyright © 2003–2013, Texas Instruments Incorporated
Max
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dB
5
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SNWS013L – AUGUST 2003 – REVISED MARCH 2013
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5.0 DC AND AC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all limits are specified to VDD = 5.0V; TJ = 25°C. Boldface limits apply at temperature extremes.
Symbol
IDD
Parameter
Supply Current
Condition
Active Mode: RFIN/EN = VDD
(DC), no RF Input Power
Present.
Min
Typ
Max
LMV225
5.3
7.5
9
LMV226
5.3
6.8
9
LMV228
5.4
6.8
9
0.32
4.5
μA
0.8
V
Shutdown: RFIN/EN = GND (DC), no RF Input
Power Present.
VLOW
EN Logic Low Input Level
VHIGH
EN Logic High Input Level
ton
Turn-on-Time
tr
IEN
PIN
(2)
1.8
(2)
Rise Time
(3)
No RF Input Power Present,
Output Loaded with 10 pF
(4)
Input Power Range
LMV225
2.1
LMV226
1.0
LMV228
1.7
Step from no Power to
0 dBm Applied, Output
Loaded with 10 pF
LMV225
4.5
Step from no Power to
15 dBm Applied, Output
Loaded with 10 pF
LMV226
1.4
LMV228
4.8
LMV226
LMV228
(1)
(2)
(3)
(4)
(5)
6
mA
μs
μs
1
LMV225
Units
V
Current Into RFIN/EN Pin
(5)
(1)
μA
−30
0
dBm
−43
−13
dBV
−15
15
dBm
−28
2
dBV
−15
15
dBm
−28
2
dBV
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
All limits are specified by design or statistical analysis
Turn-on time is measured by connecting a 10 kΩ resistor to the RFIN/EN pin. Be aware that in the actual application on the front page,
the RC-time constant of resistor R2 and capacitor C adds an additional delay.
Typical values represent the most likely parametric norm.
Power in dBV = dBm + 13 when the impedance is 50Ω.
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Product Folder Links: LMV225 LMV226 LMV228
LMV225, LMV226, LMV228
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SNWS013L – AUGUST 2003 – REVISED MARCH 2013
5.0 DC AND AC ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise specified, all limits are specified to VDD = 5.0V; TJ = 25°C. Boldface limits apply at temperature extremes. (1)
Symbol
Parameter
Logarithmic Slope
Condition
(6)
900 MHz
1800 MHz
1900 MHz
2000 MHz
Logarithmic Intercept
(6)
900 MHz
1800 MHz
1900 MHz
2000 MHz
VOUT
Output Voltage
No RF Input Power Present
Min
LMV225
44.6
LMV226
44.6
LMV228
DSBGA
44.2
LMV228 WSON
48.4
LMV225
40.6
LMV226
42.2
LMV228
DSBGA
42.4
LMV228 WSON
48.3
LMV225
39.6
LMV226
41.8
LMV228
DSBGA
42.2
LMV228 WSON
47.8
LMV225
39.7
LMV226
41.6
LMV228
DSBGA
41.8
LMV228 WSON
47.2
LMV225
−47.0
LMV226
−25.0
LMV228
DSBGA
−27.7
LMV228 WSON
−23.9
LMV225
−48.5
LMV226
−25.7
LMV228
DSBGA
−28.9
LMV228 WSON
−23.6
LMV225
−48.2
LMV226
−25.6
LMV228
DSBGA
−28.7
LMV228 WSON
−23.1
LMV225
−48.9
LMV226
−25.5
LMV228
DSBGA
−28.7
LMV228 WSON
−23.0
Output Current Sourcing/Sinking
LMV226 Only
ROUT
Output Impedance
No RF Input Power Present
(6)
Max
dBm
222
400
LMV226
231
400
244
400
4.5
Units
mV/dB
LMV225
LMV228
IOUT
Typ
5.3
23.7
mV
mA
29
31
kΩ
Device is set in active mode with a 10 kΩ resistor from VDD to RFIN/EN. RF signal is applied using a 50Ω RF signal generator AC
coupled to the RFIN/EN pin using a 100 pF coupling capacitor.
Copyright © 2003–2013, Texas Instruments Incorporated
Product Folder Links: LMV225 LMV226 LMV228
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5.0 DC AND AC ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise specified, all limits are specified to VDD = 5.0V; TJ = 25°C. Boldface limits apply at temperature extremes. (1)
Symbol
en
8
Parameter
Condition
Min
Typ
Output Referred Noise
RF Input = 1800 MHz, −10 dBm for LMV225
and 5 dBm for LMV226/LMV228, Measured at
10 kHz
Variation Due to Temperature
900 MHz, RFIN = 0 dBm
Referred to 25°C
LMV225
+0.89
−1.16
900 MHz, RFIN = 15 dBm
Referred to 25°C
LMV226
+0.25
−0.16
LMV228
DSBGA
+0.46
−0.62
LMV228 WSON
+1.39
−1.19
1800 MHz, RFIN = 0 dBm
Referred to 25°C
LMV225
+0.3
−0.82
1800 MHz, RFIN = 15 dBm
Referred to 25°C
LMV226
+0.21
−0.09
LMV228
DSBGA
+0.55
−0.78
LMV228 WSON
+1.39
−1.43
1900 MHz, RFIN = 0 dBm
Referred to 25°C
LMV225
+0.34
−0.63
1900 MHz, RFIN = 15 dBm
Referred to 25°C
LMV226
+0.21
−0.19
LMV228
DSBGA
+0.55
−0.93
LMV228 WSON
+1.54
−1.64
2000 MHz, RFIN = 0 dBm
Referred to 25°C
LMV225
+0.22
−0.75
2000 MHz RFIN = 15 dBm
Referred to 25°C
LMV226
+0.25
−0.34
LMV228
DSBGA
+0.61−
0.91
LMV228 WSON
+0.89
−0.99
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700
Max
Units
nV/√Hz
dB
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SNWS013L – AUGUST 2003 – REVISED MARCH 2013
CONNECTION DIAGRAM
GND
RFIN/EN
A1
A2
6 OUT
1
VDD
NC 2
1.0mm
GND
B1
B2
5 NC
RFIN/EN 3
4
VDD
OUT
1.0mm
500Pm
300Pm
125Pm
BUMP PITCH
BUMP DIAMETER
SOLDER DOT DIAMETER/
PASSIVATION OPENING
Figure 3. 4-Bump DSBGA – Top View
See Package Number YZR0004 or YPD0004
Figure 4. 6-pin WSON – Top View
See Package Number NGF0006A
PIN DESCRIPTIONS
Pin
Power Supply
Output
Name
Description
DSBGA
WSON6
A2
4
VDD
Positive Supply Voltage
B1
1
GND
Power Ground
A1
3
RFIN/EN
DC voltage determines enable state of the device (HIGH =
device active). AC voltage is the RF input signal to the
detector (beyond 450 MHz). The RFIN/EN pin is internally
terminated with 50Ω in series with 45 pF.
B2
6
Out
Ground referenced detector output voltage (linear in dBm)
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Block Diagrams
VDD
LOGIC
ENABLE
DETECTOR
OUT
I/I
RFIN/EN
10 dB
10 dB
10 dB
GND
Figure 5. LMV225
VDD
LOGIC
ENABLE
+
-
I/I
OUT
RFIN/EN
10 dB
10 dB
10 dB
GND
Figure 6. LMV226
10
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VDD
LOGIC
ENABLE
I/I
OUT
RFIN/EN
10 dB
10 dB
10 dB
GND
Figure 7. LMV228
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TYPICAL PERFORMANCE CHARACTERISTICS LMV225
Unless otherwise specified, VDD = 2.7V, TJ = 25°C.
Supply Current
vs.
Supply Voltage (LMV225)
Output Voltage
vs.
RF Input Power (LMV225)
2.50
8
2.25
900MHz
2.00
85°C
7
1800MHz
1.75
2000MHz
6.5
6
VOUT (V)
SUPPLY CURRENT (mA)
7.5
25°C
5.5
1.50
1900MHz
1.25
1.00
0.75
5
0.50
-40°C
4.5
0.25
4
2.5
3
3.5
4
4.5
0.00
-50
5
-40
0
10
20
Output Voltage and Log Conformance vs.
RF Input Power @ 900 MHz (LMV225)
Output Voltage and Log Conformance vs.
RF Input Power @ 1800 MHz (LMV225)
2.50
2.50
2.25
3
2.00
2
1.75
1.75
-40°C
1.50
1
1.25
0
-40°C
-1
85°C
4
3
25°C
2
1.50
1
-40°C
1.25
0
-40°C
1.00
-1
0.75
-2
0.75
-2
0.50
-3
0.50
-3
0.25
-4
0.25
-4
0.00
-50
-5
0.00
-50
-5
-40
-30
-20
-10
0
10
20
-40
RF INPUT POWER (dBm)
-30
Figure 10.
25°C
2.00
25°C
1.50
-40°C
4
2.25
3
2.00
2
1.75
1
1.25
1.00
2.50
0
-1
-40°C
VOUT (V)
85°C
1.75
0
10
20
Output Voltage and Log Conformance vs.
RF Input Power @ 2000 MHz (LMV225)
5
ERROR (dB)
2.50
85°C
-10
Figure 11.
Output Voltage and Log Conformance
vs.
RF Input Power @ 1900 MHz (LMV225)
2.25
-20
RF INPUT POWER (dBm)
5
25°C
85°C
4
85°C
3
25°C
2
1.50
-40°C
1
1.25
0
1.00
-1
-40°C
0.75
-2
0.75
-2
0.50
-3
0.50
-3
0.25
-4
0.25
-4
0.00
-50
-5
0.00
-50
-5
-40
-30
-20
-10
0
10
20
-40
RF INPUT POWER (dBm)
-20
-10
0
10
20
RF INPUT POWER (dBm)
Figure 12.
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-30
ERROR (dB)
1.00
VOUT (V)
25°C
5
85°C
25°C
ERROR (dB)
5
4
25°C
ERROR (dB)
85°C
2.00
VOUT (V)
-10
Figure 9.
85°C
12
-20
Figure 8.
2.25
VOUT (V)
-30
RF INPUT POWER (dBm)
SUPPLY VOLTAGE (V)
Figure 13.
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TYPICAL PERFORMANCE CHARACTERISTICS LMV225
(continued)
Unless otherwise specified, VDD = 2.7V, TJ = 25°C.
Logarithmic Slope vs. Frequency (LMV225)
Logarithmic Intercept vs. Frequency (LMV225)
47
-43
46
-40°C
-44
44
INTERCEPT (dBm)
SLOPE (mV/dB)
45
25°C
43
42
41
85°C
40
-40°C
-45
25°C
-46
-47
39
38
85°C
37
400
800
1200
1600
-48
400
2000
800
1200
1600
2000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 14.
Figure 15.
Output Variation vs. RF Input Power
Normalized to 25°C @ 900 MHz (LMV225)
Output Variation vs. RF Input Power
Normalized to 25°C @ 1800 MHz (LMV225)
1.5
1.5
85°C
1.0
85°C
0.5
ERROR (dB)
ERROR (dB)
1.0
0.0
-0.5
0.5
0.0
-0.5
-40°C
-1.0
-1.0
-1.5
-1.5
-40°C
-50
-40
-30
-20
-10
0
10
-50
20
-40
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
Figure 16.
Figure 17.
Output Variation vs. RF Input Power
Normalized to 25°C @ 1900 MHz (LMV225)
Output Variation vs. RF Input Power
Normalized to 25°C @ 2000 MHz (LMV225)
1.5
1.5
85°C
1.0
1.0
0.5
0.5
ERROR (dB)
ERROR (dB)
85°C
0.0
-0.5
-1.0
0.0
-0.5
-1.0
-40°C
-40°C
-1.5
-1.5
-50
-40
-30
-20
-10
0
10
20
-50
RF INPUT POWER (dBm)
Figure 18.
-40
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
Figure 19.
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TYPICAL PERFORMANCE CHARACTERISTICS LMV225
(continued)
Unless otherwise specified, VDD = 2.7V, TJ = 25°C.
PSRR vs.Frequency
(LMV225 in DSBGA)
70
PSRR vs. Frequency
(LMV225 in WSON)
5V
60
PSRR (dB)
50
40
2.7V
30
20
10
0
100
1k
10k
100k
1M
FREQUENCY (Hz)
Figure 20.
Figure 21.
RF Input Impedance vs. Frequency @ Resistance and
Reactance (LMV225 in DSBGA)
RF Input Impedance vs. Frequency @ Resistance and
Reactance (LMV225 in WSON)
150
100
IMPEDANCE (:)
R
50
0
X
-50
-100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FREQUENCY (GHz)
Figure 22.
Figure 23.
TYPICAL PERFORMANCE CHARACTERISTICS LMV226
Unless otherwise specified, VDD = 2.7V, TJ= 25°C.
Output Voltage vs. RF Input Power (LMV226)
7.0
2.50
6.5
2.25
6.0
2.00
900 MHz
1800 MHz
85°C
1.75
5.5
VOUT (V)
SUPPLY CURRENT (mA)
Supply Current vs. Supply Voltage (LMV226)
5.0
25°C
4.5
4.0
1.50
1.00
2000 MHz
0.75
-40°C
3.5
0.50
3.0
0.25
2.5
2.5
3
3.5
4
4.5
5
0.00
-50
SUPPLY VOLTAGE (V)
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-40
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
Figure 24.
14
1900 MHz
1.25
Figure 25.
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TYPICAL PERFORMANCE CHARACTERISTICS LMV226
(continued)
Unless otherwise specified, VDD = 2.7V, TJ= 25°C.
Output Voltage and Log Conformance vs.
RF Input Power @ 900 MHz (LMV226)
Output Voltage and Log Conformance vs. RF Input Power
@ 1800 MHz (LMV226)
2.50
5
2.50
2.25
4
2.25
3
2.00
2
1.75
85°C
2.00
5
4
85°C
85°C
25°C
0
1.25
-40°C
1.00
-1
0.75
2
-40°C
25°C
1
1.50
0
1.25
-40°C
1.00
-1
-2
0.75
-2
0.50
-3
0.50
-3
0.25
-4
0.25
-4
-5
0.00
-50
0.00
-50
-40
-30
-20
-10
10
0
20
ERROR (dB)
VOUT (V)
1
VOUT (V)
-40°C
25°C
ERROR (dB)
85°C
1.50
3
25°C
1.75
-5
-40
RF INPUT POWER (dBm)
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
Figure 26.
Figure 27.
Output Voltage and Log Conformance vs. RF Input Power
@ 1900 MHz (LMV226)
Output Voltage and Log Conformance vs. RF Input Power
@ 2000 MHz (LMV226)
2.50
5
2.50
2.25
4
2.25
3
2.00
2
1.75
85°C
85°C
25°C
VOUT (V)
3
1
0
1.25
-40°C
2
-40°C
25°C
1.50
1
0
1.25
-40°C
1.00
-1
-2
0.75
-2
0.50
-3
0.50
-3
0.25
-4
0.25
-4
-5
0.00
-50
1.00
-1
0.75
0.00
-50
-40
-30
-20
-10
0
10
20
ERROR (dB)
-40°C
VOUT (V)
25°C
1.50
4
85°C
85°C
25°C
1.75
ERROR (dB)
2.00
5
-5
-40
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
Figure 28.
Figure 29.
Logarithmic Slope vs. Frequency (LMV226)
Logarithmic Intercept vs. Frequency (LMV226)
-23.0
46
25°C
45
-23.5
44
-24.0
INTERCEPT (dBm)
SLOPE (mV/dB)
-40°C
43
85°C
42
41
-40°C
25°C
-24.5
-25.0
-25.5
85°C
-26.0
40
39
400
800
1200
1600
2000
-26.5
400
800
1200
1600
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 30.
Figure 31.
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TYPICAL PERFORMANCE CHARACTERISTICS LMV226
(continued)
Unless otherwise specified, VDD = 2.7V, TJ= 25°C.
Output Variation vs. RF Input Power
Normalized to 25°C @ 900 MHz (LMV226)
Output Variation vs. RF Input Power
Normalized to 25°C @ 1800 MHz (LMV226)
1.5
1.5
1.0
1.0
85°C
ERROR (dB)
ERROR (dB)
85°C
0.5
0.5
0.0
-0.5
-40°C
0.0
-0.5
-40°C
-1.0
-1.5
-50
-1.0
-30
-40
-20
-10
0
10
-1.5
-50
20
-40
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
Figure 32.
Figure 33.
Output Variation vs. RF Input Power
Normalized to 25°C @ 1900 MHz (LMV226)
Output Variation vs. RF Input Power
Normalized to 25°C @ 2000 MHz (LMV226)
1.5
1.5
1.0
85°C
1.0
85°C
0.5
ERROR (dB)
ERROR (dB)
0.5
0.0
-0.5
0.0
-0.5
-40°C
-1.0
-1.5
-50
-40°C
-1.0
-40
-30
-20
-10
0
10
-1.5
-50
20
-40
RF INPUT POWER (dBm)
70
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
Figure 34.
Figure 35.
PSRR vs. Frequency
(LMV226)
RF Input Impedance vs. Frequency @ Resistance and
Reactance (LMV226)
150
5V
60
100
R
IMPEDANCE (:)
PSRR (dB)
50
40
2.7V
30
20
50
0
X
-50
10
0
100
1k
10k
100k
1M
-100
0.4
Figure 36.
16
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0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FREQUENCY (GHz)
FREQUENCY (Hz)
Figure 37.
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TYPICAL PERFORMANCE CHARACTERISTICS LMV228 IN DSBGA
Unless otherwise specified, VDD = 2.7V, TJ= 25°C.
Supply Current vs. Supply Voltage
(LMV228 in DSBGA)
Output Voltage vs. RF Input Power
(LMV228 in DSBGA)
7.0
2.50
6.5
2.25
1800 MHz
85°C
1.75
5.5
1900 MHz
VOUT (V)
SUPPLY CURRENT (mA)
900 MHz
2.00
6.0
5.0
25°C
4.5
1.50
1.25
2000 MHz
1.00
4.0
0.75
3.5
-40°C
0.50
3.0
0.25
2.5
2.5
3
3.5
4
4.5
0.00
-50
5
-40
-30
SUPPLY VOLTAGE (V)
-20
-10
0
10
20
RF INPUT POWER (dBm)
Figure 38.
Figure 39.
Output Voltage and Log Conformance vs.
RF Input Power @ 900 MHz (LMV228 in DSBGA)
Output Voltage and Log Conformance vs.
RF Input Power @ 1800 MHz (LMV228 in DSBGA)
2.50
85°C
2.25
25°C
2.00
5
2.50
4
2.25
3
2.00
2
1.75
5
85°C
4
25°C
3
0
1.25
-40°C
1.00
-1
0.75
2
-40°C
25°C
1.50
1.25
1
0
-40°C
1.00
-1
-2
0.75
-2
0.50
-3
0.50
-3
0.25
-4
0.25
-4
-5
0.00
-50
0.00
-50
-40
-30
-20
-10
0
10
20
ERROR (dB)
VOUT (V)
1
25°C
VOUT (V)
-40°C
85°C
1.50
ERROR (dB)
85°C
1.75
-5
-40
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
Figure 40.
Figure 41.
Output Voltage and Log Conformance vs.
RF Input Power @ 1900 MHz (LMV228 in DSBGA)
Output Voltage and Log Conformance vs.
RF Input Power @ 2000 MHz (LMV228 in DSBGA)
2.50
85°C
2.25
25°C
2.00
5
2.50
4
2.25
3
2.00
2
1.75
5
85°C
0
-40°C
1.00
-1
0.75
2
-40°C
1.50
1
25°C
0
1.25
-40°C
1.00
-1
-2
0.75
-2
0.50
-3
0.50
-3
0.25
-4
0.25
-4
-5
0.00
-50
0.00
-50
-40
-30
-20
-10
0
10
20
ERROR (dB)
1
VOUT (V)
VOUT (V)
-40°C
25°C
1.25
3
85°C
ERROR (dB)
85°C
1.75
1.50
4
25°C
-5
-40
RF INPUT POWER (dBm)
Figure 42.
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
Figure 43.
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TYPICAL PERFORMANCE CHARACTERISTICS LMV228 IN DSBGA
(continued)
Unless otherwise specified, VDD = 2.7V, TJ= 25°C.
Logarithmic Slope vs.
Frequency (LMV228 in DSBGA)
Logarithmic Intercept vs.
Frequency (LMV228 in DSBGA)
44.5
-25.5
-40°C
25°C
44.0
-26.0
-40°C
INTERCEPT (dBm)
SLOPE (mV/dB)
43.5
43.0
85°C
42.5
42.0
41.5
-26.5
25°C
-27.0
-27.5
-28.0
85°C
-28.5
41.0
40.5
400
800
1200
1600
-29.0
400
2000
800
1200
1600
2000
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 44.
Figure 45.
Output Variation vs.
RF Input Power Normalized to 25°C @ 900 MHz (LMV228 in
DSBGA)
Output Variation vs.
RF Input Power Normalized to 25°C @ 1800 MHz (LMV228 in
DSBGA)
1.5
1.5
1.0
1.0
85°C
85°C
0.5
ERROR (dB)
ERROR (dB)
0.5
0.0
-0.5
-40°C
0.0
-0.5
-40°C
-1.0
-1.0
-1.5
-50
-40
-30
-20
-10
0
10
-1.5
-50
20
-30
-20
-10
0
10
20
RF INPUT POWER (dBm)
Figure 46.
Figure 47.
Output Variation vs.
RF Input Power Normalized to 25°C @ 1900 MHz (LMV228 in
DSBGA)
Output Variation vs.
RF Input Power Normalized to 25°C @ 2000 MHz (LMV228 in
DSBGA)
1.5
1.5
1.0
1.0
85°C
0.0
-0.5
-40°C
-1.0
-1.5
-50
85°C
0.5
ERROR (dB)
ERROR (dB)
0.5
18
-40
RF INPUT POWER (dBm)
-40
-30
-20
-10
0
0.0
-0.5
-1.0
10
20
-1.5
-50
-40°C
-40
-30
-20
-10
0
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
Figure 48.
Figure 49.
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TYPICAL PERFORMANCE CHARACTERISTICS LMV228 IN DSBGA
(continued)
Unless otherwise specified, VDD = 2.7V, TJ= 25°C.
PSRR vs. Frequency
(LMV228 in DSBGA)
70
RF Input Impedance vs. Frequency @ Resistance and
Reactance (LMV228 in DSBGA)
150
5V
60
100
R
IMPEDANCE (:)
PSRR (dB)
50
40
2.7V
30
20
50
0
X
-50
10
-100
0.4
0
100
1k
10k
100k
1M
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FREQUENCY (GHz)
FREQUENCY (Hz)
Figure 50.
Figure 51.
TYPICAL PERFORMANCE CHARACTERISTICS LMV228 IN WSON
Unless otherwise specified, VDD = 2.7V, TJ= 25°C.
Supply Current
vs.
Supply Voltage (LMV228 in WSON)
Output Voltage
vs.
RF Input Power (LMV228 in WSON)
7.0
SUPPLY CURRENT (mA)
6.5
6.0
85°C
5.5
5.0
25°C
4.5
4.0
3.5
-40°C
3.0
2.5
2.5
3
3.5
4
4.5
5
SUPPLY VOLTAGE (V)
Figure 52.
Figure 53.
Output Voltage and Log Conformance
vs.
RF Input Power @ 900 MHz (LMV228 inWSON)
Output Voltage and Log Conformance vs.
RF Input Power @ 1800 MHz (LMV228 in WSON)
1.80
3
1.60
1.40
2
1.40
1.20
1
1.00
0
VOUT (V)
1.60
85°C
25°C
0.80
-1
-40°C
0.60
-40°C
25°C
0.20
0.00
-50
-40
-30
4
85°C
3
2
1.20
1
25°C
1.00
-2
0.60
-3
0.40
-4
0.20
0
-40°C
0.80
-1
-2
85°C
85°C
0.40
5
ERROR (dB)
2.00
4
VOUT (V)
5
1.80
ERROR (dB)
2.00
-20
-10
0
10
-5
20
0.00
-50
-3
-40°C
-4
25°C
-40
-30
-20
-10
0
10
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
Figure 54.
Figure 55.
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TYPICAL PERFORMANCE CHARACTERISTICS LMV228 IN WSON
(continued)
Unless otherwise specified, VDD = 2.7V, TJ= 25°C.
2.00
5
4
1.80
4
3
1.60
1.40
2
1.40
2
1.20
1
1.20
1
85°C
VOUT (V)
25°C
1.00
0
-40°C
0.80
-1
0.60
-40°C
0.20
0.00
-50
25°C
-40
-30
1.00
0.60
-3
0.40
-4
0.20
0
25°C
0.80
-2
3
85°C
-1
-40°C
-2
85°C
85°C
0.40
VOUT (V)
5
1.80
ERROR (dB)
2.00
1.60
20
Output Voltage and Log Conformance vs.
RF Input Power @ 2000 MHz (LMV228 in WSON)
ERROR (dB)
Output Voltage and Log Conformance
vs.
RF Input Power @ 1900 MHz (LMV228 in WSON)
-20
-10
0
10
-5
20
0.00
-50
-3
-40°C
-4
25°C
-40
-30
-20
-10
0
10
-5
20
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
Figure 56.
Figure 57.
Logarithmic Slope
vs.
Frequency (LMV228 in WSON)
Logarithmic Intercept
vs.
Frequency (LMV228 in WSON)
Figure 58.
Figure 59.
Output Variation
vs.
RF Input Power Normalized to 25°C @ 900 MHz (LMV228 in
WSON)
Output Variation
vs.
RF Input Power Normalized to 25°C @ 1800 MHz (LMV228 in
WSON)
Figure 60.
Figure 61.
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TYPICAL PERFORMANCE CHARACTERISTICS LMV228 IN WSON
(continued)
Unless otherwise specified, VDD = 2.7V, TJ= 25°C.
Output Variation
vs.
RF Input Power Normalized to 25°C @ 1900 MHz (LMV228 in
WSON)
Output Variation
vs.
RF Input Power Normalized to 25°C @ 2000 MHz (LMV228 in
WSON)
Figure 62.
Figure 63.
PSRR
vs.
Frequency
(LMV228 in WSON)
RF Input Impedance
vs.
Frequency @ Resistance and Reactance (LMV228 in WSON)
Figure 64.
Figure 65.
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APPLICATION NOTES
CONFIGURING A TYPICAL APPLICATION
The LMV225/LMV226/LMV228 are power detectors intended for CDMA and WCDMA applications. Power
applied at its input translates to a DC voltage on the output through a linear-in-dB response. The LMV225
detector is especially suited for power measurements via a high-resistive tap, while the LMV226/LMV228 are
designed to be used in combination with a directional coupler. The LMV226 has an additional output voltage
buffer and therefore a low output impedance. The key features of the devices are shown in .
Table 1. DEVICE CHARACTERISTICS
Input Range (dBm)
Output Buffer
LMV225
−30 / 0
No
High Resistive Tap
Application
LMV226
−15 / 15
Yes
Directional Coupler
LMV228
−15 / 15
No
Directional Coupler
In order to match the output power range of the power amplifier (PA) with the range of the LMV225’s input, the
high resistive tap needs to be configured correctly. In case of the LMV226/LMV228 the coupling factor of the
directional coupler needs to be chosen correctly.
HIGH RESISTIVE TAP APPLICATION
The constant input impedance of the device enables the realization of a frequency independent input attenuation
to adjust the LMV225’s range to the range of the PA. Resistor R1 and the 50Ω input resistance (RIN) of the
device realize this attenuation (Figure 66). To minimize insertion loss, resistor R1 needs to be sufficiently large.
The following example demonstrates how to determine the proper value for R1.
RF
ANTENNA
PA
R1
1.8 k:
C
100 pF
VDD
RFIN/EN
LMV225
RIN
ENABLE
R2
10 k:
OUT
CIN
GND
Figure 66. Typical LMV225 Application with High Resistive Tap
Suppose the useful output power of the PA ranges up to +31 dBm. As the LMV225 can handle input power
levels up to 0 dBm. R1 should realize a minimum attenuation of 31 - 0 = 31 dB. The attenuation realized by R1
and the effective input resistance RIN of the detector equals:
AdB = 20·LOG 1 +
R1
= 31dB
RIN
(1)
Solving this expression for R1, using that RIN = 50Ω, yields:
AdB
31
R1 = 10 20 -1 · RIN = 10 20 -1 · 50 = 1724:
(2)
In Figure 66, R1 is set to 1800Ω resulting in an attenuation of 31.4 dB.
22
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SNWS013L – AUGUST 2003 – REVISED MARCH 2013
DIRECTIONAL COUPLER APPLICATION
The LMV226/LMV228 also has a 50Ω input resistance. However, its input range differs compared to the
LMV225, i.e. −15 dBm to +15 dBm. If a typical attenuation of a directional coupler is 20 dB, the LMV226/LMV228
can be directly connected via the directional coupler to the PA without the need of additional external attenuator
(Figure 67). Different PA ranges can be configured using couplers with other coupling factors.
ANTENNA
RF
PA
50:
VDD
C
100 pF
RFIN/EN
LMV226/
LMV228
OUT
ENABLE
R2
10 k:
GND
Figure 67. Typical LMV226/LMV228 Application with
Directional Coupler
SHUTDOWN FUNCTIONALITY
The LMV225/LMV226/LMV228 RFIN/EN pins have 2 functions combined:
• Enable/Shutdown
• Power input
The capacitor C and the resistor R2 (Figure 66 and Figure 67) separate the DC shutdown functionality from the
AC power measurement. The device is active when Enable = HI, otherwise it is in a low power consumption
shutdown mode. During shutdown the output will be LOW.
Capacitor C should be chosen sufficiently large to ensure a corner frequency far below the lowest input
frequency to be measured. In case of the LMV225 the corner frequency can be calculated using:
1
f=
C · CIN
2 S (R1 + RIN)
C + CIN
where
•
RIN = 50Ω, CIN = 45 pF typical
(3)
With R1 = 1800Ω and C = 100 pF, this results in a corner frequency of 2.8 MHz. This corner frequency is an
indicative number. The goal is to have a magnitude transfer, which is sufficiently flat in the used frequency range;
capacitor C should be chosen significantly larger than capacitor CIN to assure a proper performance of the high
resistive tap. Capacitor C shouldn’t be chosen excessively large since the RC-time, it introduces in combination
with resistor R2, adds to the turn-on time of the device.
The LMV226/LMV228 do not use a resistor R1 like the LMV225. Though a resistor is seen on the coupler side
(RCOUPLER). Therefore a similar equation holds for the LMV226/LMV228 LF corner frequency, where R1 is
replaced with the coupler output impedance (RCOUPLER).
With RCOUPLER = 50Ω and C = 100 pF, the resulting corner frequency is 50 MHz.
The output voltage is proportional to the logarithm of the input power, often called “linear-in-dB”. Figure 68 shows
the typical output voltage versus PA output power of the LMV225 setup as depicted in Figure 66.
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LMV225 OUTPUT VOLTAGE (V)
2.25
2.00 LMV225
RF INPUT POWER
1.75
31.4 dB
1.50
1.25
1.00
0.75
0.50
PA OUTPUT
POWER
0.25
0.00
-50 -40 -30 -20 -10
0
10
20
30
40
POWER (dBm)
Figure 68. Typical power detector response, VOUT vs. PA output Power
OUTPUT RIPPLE DUE TO AM MODULATION
A CDMA modulated carrier wave generally contains some amplitude modulation that might disturb the RF power
measurement used for controlling the PA. This section explains the relation between amplitude modulation in the
RF signal and the ripple on the output of the LMV225/LMV228. Expressions are provided to estimate this ripple
on the output. The ripple can be further reduced by lowpass filtering at the output. This is realized by connecting
an capacitor from the output of the LMV225/LMV228 to ground.
Estimating Output Ripple
The CDMA modulated RF input signal of Figure 68 can be described as:
VIN(t) = VIN [1 + μ(t)] cos (2 · π · f · t)
where
•
•
VIN is the amplitude of the carrier frequency
Amplitude modulation μ(t) can be between -1 and 1
(4)
VIN (1 + P
VIN
VIN (1 - P
0
Figure 69. AM Modulated RF Signal
24
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SNWS013L – AUGUST 2003 – REVISED MARCH 2013
The ripple observed at the output of the detector equals the detectors response to the power variation at the
input due to AM modulation (Figure 69). This signal has a maximum amplitude VIN • (1+μ) and a minimum
amplitude VIN • (1-μ), where 1+μ can be maximum 2 and 1-μ can be minimum 0. The amplitude of the ripple can
be described with the formula:
2
2
VIN (1 + P)2
VRIPPLE = VY
VIN (1 - P)2
+30 -VY
10 LOG
2RIN
+30
10 LOG
2RIN
PINMIN IN dBm
PINMAX IN dBm
where
•
•
VY is the slope of the detection curve (Figure 70)
μ is the modulation index
(5)
Equation 5 can be reduced to:
VRIPPLE = VY · 20 LOG
1+P
1-P
(6)
Consequently, the ripple is independent of the average input power of the RF input signal and only depends on
the logarithmic slope VY and the ratio of the maximum and the minimum input signal amplitude.
For CDMA, the ratio of the maximum and the minimum input signal amplitude modulation is typically in the order
of 5 to 6 dB, which is equivalent to a modulation index μ of 0.28 to 0.33.
A further understanding of the equation above can be achieved via the knowledge that the output voltage VOUT of
the LMV225/LMV228 is linear in dB, or proportional to the input power PIN in dBm. As discussed earlier, CDMA
has a modulation in the order of 5 to 6 dB. Since the transfer is linear in dB, the output voltage VOUT will vary
linearly over about 5 to 6 dB in the curve (Figure 70).
VOUT (V)
200mV
SLOPE = VY
5dB
PZ
PIN (dBm)
Figure 70. VOUT vs. RF Input Power PIN
The output voltage variation ΔVOUT is thus identical for RF input signals that fall within the linear range (in dB) of
the detector. In other words, the output variation is independent of the absolute RF input signal:
ΔVO = VY · ΔPIN
(7)
In which VYis the slope of the curve. The log-conformance error is usually much smaller than the ripple due to
AM modulation. In case of the LMV225/LMV228, VY = 40 mV/dB. With ΔPIN = 5 dB for CDMA, ΔVOUT = 200
mVPP. This is valid for all VOUT.
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Output Ripple with Additional Filtering
The calculated result above is for an unfiltered configuration. When a low pass filter is used by shunting a
capacitor of e.g. COUT = 1.5 nF at the output of the LMV225/LMV228 to ground, this ripple is further attenuated.
The cut-off frequency follows from:
fC =
1
2 S COUT RO
(8)
With the output resistance of the LMV225/LMV228 RO = 19.8 kΩ typical and COUT = 1.5 nF, the cut-off frequency
equals fC = 5.36 kHz. A 100 kHz AM signal then gets attenuated by 5.36/100 or 25.4 dB. The remaining ripple
will be less than 20 mV. With a slope of 40 mV/dB this translates into an error of less than ±0.5 dB. Since the
LMV226 has a low output impedance buffer, a capacitor to reduce the ripple will not be effective.
Output Ripple Measurement
Figure 71 shows the ripple reduction that can be achieved by adding additional capacitance at the output of the
LMV225/LMV228. The RF signal of 900 MHz is AM modulated with a 100 kHz sinewave and a modulation index
of 0.3. The RF input power is swept while the modulation index remains unchanged. Without the output capacitor
the ripple is about 200 mVPP. Connecting a capacitor of 1.5 nF at the output to ground, results in a ripple of 12
mVPP. The attenuation with a 1.5 nF capacitor is then 20 • log (200/12) = 24.4 dB. This is very close to the
calculated number of the previous paragraph.
1000
OUTPUT RIPPLE (mVPP)
NO ADDITIONAL CAPACITOR
100
10
COUT = 1.5nF
1
-50
-40
-30
-20
-10
0
10
RF INPUT POWER (dBm)
Figure 71. Output Ripple vs. RF Input Power
PRINCIPLE OF OPERATION
The logarithmic response of the LMV225/LMV226/LMV228 is implemented by a logarithmic amplifier as shown in
Figure 72. The logarithmic amplifier consists of a number of cascaded linear gain cells. With these gain cells, a
piecewise approximation of the logarithmic function is constructed.
+
+
+
+
Y
A/0
X0
A/0
X1
A/0
X2
A/0
X3
X4
Figure 72. Logarithmic Amplifier
26
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SNWS013L – AUGUST 2003 – REVISED MARCH 2013
Every gain cell has a response according to Figure 73. At a certain threshold (EK), the gain cell starts to saturate,
which means that the gain drops to zero. The output of gain cell 1 is connected to the input of gain cell 2 and so
on.
y
x0
xA
A/0
x
y
x
EK
Figure 73. Gain Cell
All gain cell outputs are AM-demodulated with a peak detector and summed together. This results in a
logarithmic function. The logarithmic range is about:
20 · n · log (A)
where
•
•
n = number of gain cells
A = gain per gaincell
(9)
Figure 74 shows a logarithmic function on a linear scale and the piecewise approximation of the logarithmic
function.
Y
Y = LOG (X)
3
EK/A
EK/A
EK/A
1
X (LIN)
EK
2
Figure 74. Log-Function on Lin Scale
Figure 75 shows a logarithmic function on a logarithmic scale and the piecewise approximation of the logarithmic
function.
Y
Y=X
Y = AX
2
Y=A X
3
Y=A X
EK/A3
EK/A2
EK/A1
EK
X (Log)
Figure 75. Log-Function on Log Scale
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LMV225, LMV226, LMV228
SNWS013L – AUGUST 2003 – REVISED MARCH 2013
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The maximum error for this approximation occurs at the geometric mean of a gain section, which is e.g. for the
third segment:
EK
A
2 ·
EK
A
1 =
EK
A A
(10)
The size of the error increases with distance between the thresholds.
LAYOUT CONSIDERATIONS
For a proper functioning part a good board layout is necessary. Special care should be taken for the series
resistance R1 (Figure 66) that determines the attenuation. For high resistor values the parasitic capacitance of
the resistor may significantly impact the realized attenuation. The effective attenuation will be lower than
intended. To reduce the parasitic capacitance across resistor R1, this resistor can be composed of several
components in series instead of using a single component.
28
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SNWS013L – AUGUST 2003 – REVISED MARCH 2013
REVISION HISTORY
Changes from Revision K (March 2013) to Revision L
•
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 28
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PACKAGE OPTION ADDENDUM
www.ti.com
8-Oct-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LMV225SD/NOPB
ACTIVE
WSON
NGF
6
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
A90
LMV225SDX/NOPB
ACTIVE
WSON
NGF
6
4500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
A90
LMV225TL/NOPB
ACTIVE
DSBGA
YZR
4
250
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
LMV225TLX/NOPB
ACTIVE
DSBGA
YZR
4
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
LMV225UR/NOPB
ACTIVE
DSBGA
YPD
4
250
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
LMV225URX/NOPB
ACTIVE
DSBGA
YPD
4
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
LMV226TL/NOPB
ACTIVE
DSBGA
YZR
4
250
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
LMV226TLX/NOPB
ACTIVE
DSBGA
YZR
4
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
LMV226UR/NOPB
ACTIVE
DSBGA
YPD
4
250
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
LMV228SD/NOPB
ACTIVE
WSON
NGF
6
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LMV228TL/NOPB
ACTIVE
DSBGA
YZR
4
250
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
LMV228TLX/NOPB
ACTIVE
DSBGA
YZR
4
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-40 to 85
LMV228UR/NOPB
ACTIVE
DSBGA
YPD
4
250
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Addendum-Page 1
A89
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
8-Oct-2015
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Sep-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LMV225SD/NOPB
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
2.5
1.0
8.0
12.0
Q1
WSON
NGF
6
1000
178.0
12.4
LMV225SDX/NOPB
WSON
NGF
6
4500
330.0
12.4
2.8
2.5
1.0
8.0
12.0
Q1
LMV225TL/NOPB
DSBGA
YZR
4
250
178.0
8.4
1.09
1.09
0.76
4.0
8.0
Q1
LMV225TLX/NOPB
DSBGA
YZR
4
3000
178.0
8.4
1.09
1.09
0.76
4.0
8.0
Q1
LMV225UR/NOPB
DSBGA
YPD
4
250
178.0
8.4
1.04
1.04
0.56
4.0
8.0
Q1
LMV225URX/NOPB
DSBGA
YPD
4
3000
178.0
8.4
1.04
1.04
0.56
4.0
8.0
Q1
LMV226TL/NOPB
DSBGA
YZR
4
250
178.0
8.4
1.09
1.09
0.76
4.0
8.0
Q1
LMV226TLX/NOPB
DSBGA
YZR
4
3000
178.0
8.4
1.09
1.09
0.76
4.0
8.0
Q1
LMV226UR/NOPB
DSBGA
YPD
4
250
178.0
8.4
1.04
1.04
0.56
4.0
8.0
Q1
LMV228SD/NOPB
WSON
NGF
6
1000
178.0
12.4
2.8
2.5
1.0
8.0
12.0
Q1
LMV228TL/NOPB
DSBGA
YZR
4
250
178.0
8.4
1.09
1.09
0.76
4.0
8.0
Q1
LMV228TLX/NOPB
DSBGA
YZR
4
3000
178.0
8.4
1.09
1.09
0.76
4.0
8.0
Q1
LMV228UR/NOPB
DSBGA
YPD
4
250
178.0
8.4
1.04
1.04
0.56
4.0
8.0
Q1
Pack Materials-Page 1
2.8
B0
(mm)
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Sep-2015
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMV225SD/NOPB
WSON
NGF
6
1000
210.0
185.0
35.0
LMV225SDX/NOPB
WSON
NGF
6
4500
367.0
367.0
35.0
LMV225TL/NOPB
DSBGA
YZR
4
250
210.0
185.0
35.0
LMV225TLX/NOPB
DSBGA
YZR
4
3000
210.0
185.0
35.0
LMV225UR/NOPB
DSBGA
YPD
4
250
210.0
185.0
35.0
LMV225URX/NOPB
DSBGA
YPD
4
3000
210.0
185.0
35.0
LMV226TL/NOPB
DSBGA
YZR
4
250
210.0
185.0
35.0
LMV226TLX/NOPB
DSBGA
YZR
4
3000
210.0
185.0
35.0
LMV226UR/NOPB
DSBGA
YPD
4
250
210.0
185.0
35.0
LMV228SD/NOPB
WSON
NGF
6
1000
210.0
185.0
35.0
LMV228TL/NOPB
DSBGA
YZR
4
250
210.0
185.0
35.0
LMV228TLX/NOPB
DSBGA
YZR
4
3000
210.0
185.0
35.0
LMV228UR/NOPB
DSBGA
YPD
4
250
210.0
185.0
35.0
Pack Materials-Page 2
PACKAGE OUTLINE
YPD0004
DSBGA - 0.395 mm max height
SCALE 14.000
DIE SIZE BALL GRID ARRAY
B
A
E
BALL A1
CORNER
D
C
0.395 MAX
SEATING PLANE
BALL TYP
0.155
0.115
0.05 C
0.5
B
SYMM
0.5
D: Max = 0.998 mm, Min =0.938 mm
E: Max = 0.996 mm, Min =0.936 mm
A
1
4X
0.015
0.295
0.255
C A B
2
SYMM
4215141/B 08/2016
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
www.ti.com
EXAMPLE BOARD LAYOUT
YPD0004
DSBGA - 0.395 mm max height
DIE SIZE BALL GRID ARRAY
(0.5)
4X ( 0.265)
1
2
A
SYMM
(0.5)
B
SYMM
LAND PATTERN EXAMPLE
SCALE:40X
0.05 MAX
( 0.265)
METAL
METAL UNDER
SOLDER MASK
0.05 MIN
( 0.265)
SOLDER MASK
OPENING
SOLDER MASK
OPENING
NON-SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
NOT TO SCALE
4215141/B 08/2016
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
See Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009).
www.ti.com
EXAMPLE STENCIL DESIGN
YPD0004
DSBGA - 0.395 mm max height
DIE SIZE BALL GRID ARRAY
(0.5) TYP
4X ( 0.25)
(R0.05) TYP
2
1
A
SYMM
(0.5) TYP
B
METAL
TYP
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:50X
4215141/B 08/2016
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
www.ti.com
MECHANICAL DATA
NGF0006A
www.ti.com
MECHANICAL DATA
YZR0004xxx
D
0.600±0.075
E
TLA04XXX (Rev D)
D: Max = 1.057 mm, Min =0.996 mm
E: Max = 1.057 mm, Min =0.996 mm
4215042/A
NOTES:
A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994.
B. This drawing is subject to change without notice.
www.ti.com
12/12
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used in or for Designers’ applications) with all applicable regulations, laws and other applicable requirements. Designer represents that, with
respect to their applications, Designer has all the necessary expertise to create and implement safeguards that (1) anticipate dangerous
consequences of failures, (2) monitor failures and their consequences, and (3) lessen the likelihood of failures that might cause harm and
take appropriate actions. Designer agrees that prior to using or distributing any applications that include TI products, Designer will
thoroughly test such applications and the functionality of such TI products as used in such applications.
TI’s provision of technical, application or other design advice, quality characterization, reliability data or other services or information,
including, but not limited to, reference designs and materials relating to evaluation modules, (collectively, “TI Resources”) are intended to
assist designers who are developing applications that incorporate TI products; by downloading, accessing or using TI Resources in any
way, Designer (individually or, if Designer is acting on behalf of a company, Designer’s company) agrees to use any particular TI Resource
solely for this purpose and subject to the terms of this Notice.
TI’s provision of TI Resources does not expand or otherwise alter TI’s applicable published warranties or warranty disclaimers for TI
products, and no additional obligations or liabilities arise from TI providing such TI Resources. TI reserves the right to make corrections,
enhancements, improvements and other changes to its TI Resources. TI has not conducted any testing other than that specifically
described in the published documentation for a particular TI Resource.
Designer is authorized to use, copy and modify any individual TI Resource only in connection with the development of applications that
include the TI product(s) identified in such TI Resource. NO OTHER LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE
TO ANY OTHER TI INTELLECTUAL PROPERTY RIGHT, AND NO LICENSE TO ANY TECHNOLOGY OR INTELLECTUAL PROPERTY
RIGHT OF TI OR ANY THIRD PARTY IS GRANTED HEREIN, including but not limited to any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information
regarding or referencing third-party products or services does not constitute a license to use such products or services, or a warranty or
endorsement thereof. Use of TI Resources may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
TI RESOURCES ARE PROVIDED “AS IS” AND WITH ALL FAULTS. TI DISCLAIMS ALL OTHER WARRANTIES OR
REPRESENTATIONS, EXPRESS OR IMPLIED, REGARDING RESOURCES OR USE THEREOF, INCLUDING BUT NOT LIMITED TO
ACCURACY OR COMPLETENESS, TITLE, ANY EPIDEMIC FAILURE WARRANTY AND ANY IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF ANY THIRD PARTY INTELLECTUAL
PROPERTY RIGHTS. TI SHALL NOT BE LIABLE FOR AND SHALL NOT DEFEND OR INDEMNIFY DESIGNER AGAINST ANY CLAIM,
INCLUDING BUT NOT LIMITED TO ANY INFRINGEMENT CLAIM THAT RELATES TO OR IS BASED ON ANY COMBINATION OF
PRODUCTS EVEN IF DESCRIBED IN TI RESOURCES OR OTHERWISE. IN NO EVENT SHALL TI BE LIABLE FOR ANY ACTUAL,
DIRECT, SPECIAL, COLLATERAL, INDIRECT, PUNITIVE, INCIDENTAL, CONSEQUENTIAL OR EXEMPLARY DAMAGES IN
CONNECTION WITH OR ARISING OUT OF TI RESOURCES OR USE THEREOF, AND REGARDLESS OF WHETHER TI HAS BEEN
ADVISED OF THE POSSIBILITY OF SUCH DAMAGES.
Unless TI has explicitly designated an individual product as meeting the requirements of a particular industry standard (e.g., ISO/TS 16949
and ISO 26262), TI is not responsible for any failure to meet such industry standard requirements.
Where TI specifically promotes products as facilitating functional safety or as compliant with industry functional safety standards, such
products are intended to help enable customers to design and create their own applications that meet applicable functional safety standards
and requirements. Using products in an application does not by itself establish any safety features in the application. Designers must
ensure compliance with safety-related requirements and standards applicable to their applications. Designer may not use any TI products in
life-critical medical equipment unless authorized officers of the parties have executed a special contract specifically governing such use.
Life-critical medical equipment is medical equipment where failure of such equipment would cause serious bodily injury or death (e.g., life
support, pacemakers, defibrillators, heart pumps, neurostimulators, and implantables). Such equipment includes, without limitation, all
medical devices identified by the U.S. Food and Drug Administration as Class III devices and equivalent classifications outside the U.S.
TI may expressly designate certain products as completing a particular qualification (e.g., Q100, Military Grade, or Enhanced Product).
Designers agree that it has the necessary expertise to select the product with the appropriate qualification designation for their applications
and that proper product selection is at Designers’ own risk. Designers are solely responsible for compliance with all legal and regulatory
requirements in connection with such selection.
Designer will fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of Designer’s noncompliance with the terms and provisions of this Notice.
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