MSFC160 Thyristor/Diode Modules 800 to 1600V 160Amp VRRM / VDRM IFAV / ITAV Applications y y y y Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features y y y y y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DBCceramic isolated metal baseplate UL E243882 approved Module Type TYPE VRRM/VDRM VRSM MSFC160-08 MSFC160-12 MSFC160-16 800V 1200V 1600V 900V 1300V 1700V ◆Diode Maximum Ratings Symbol Item Conditions Values Units ID Output Current(D.C.) Tc=85℃ 160 A IFSM Surge forward current t=10mS Tvj =45℃ 5400 A 145000 A2s 3000 V -40 to +125 -40 to +125 i2t Circuit Fusing Consideration Visol Isolation Breakdown Voltage(R.M.S) Tvj Tstg Operating Junction Temperature Storage Temperature Mt Mounting Torque Ms Weight To terminals(M6) 3±15% ℃ ℃ Nm To heatsink(M6) 5±15% Nm 165 g Values Units Junction to Case 0.085 ℃/W Case to Heatsink 0.05 ℃/W Module（Approximately） Thermal Characteristics Symbol Item Rth(j-c) Thermal Impedance, max. Rth(c-s) a.c.50HZ;r.m.s.;1min Thermal Impedance, max. Conditions Electrical Characteristics Symbol Item VFM Forward Voltage Drop, max. IRRM Repetitive Peak Reverse Current, max. Document Number: MSFC160 Dec.20, 2010 Conditions T=25℃ IF =500A Tvj =25℃ VRD=VRRM Tvj =125℃ VRD=VRRM Values Min. Typ. ≤0.5 ≤9 Max. 1.70 Units V mA mA www.smsemi.com 1 MSFC160 ◆Thyristor Maximum Ratings Symbol Values Units ITAV Average On-State Current Sine 180o;Tc=85℃ 160 A ITSM Surge On-State Current TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 5400 5000 A Circuit Fusing Consideration TVJ =45℃ t=10ms, sine TVJ =125℃ t=10ms, sine 145000 125000 A2s i2t Item Visol Tvj Isolation Breakdown Voltage(R.M.S) Operating Junction Temperature Tstg Storage Temperature Mt Mounting Torque Ms Conditions a.c.50HZ;r.m.s.;1min 3000 -40 to +130 -40 to +125 V ℃ To terminals(M6) 3±15% ℃ Nm To heatsink(M6) 5±15% Nm di/dt Critical Rate of Rise of On-State Current TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 200 A/us dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Values Units Thermal Characteristics Symbol Item Thermal Impedance, max. Rth(j-c) Rth(c-s) Thermal Impedance, max. Conditions Junction to Case 0.17 ℃/W Case to Heatsink 0.10 ℃/W Electrical Characteristics Symbol Item VTM Peak On-State Voltage, max. Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. IRRM/IDRM VTO rT Conditions Values Min. Typ. Max. T=25℃ IT =500A TVJ=TVJM ,VR=VRRM ,VD= VDRM Units 1.70 V 40 mA On state threshold voltage For power-loss calculations only (TVJ =125℃) 0.85 V Value of on-state slope resistance. max TVJ =TVJM 1.5 mΩ VGT Gate Trigger Voltage, max. TVJ =25℃ , VD =6V 3 V IGT Gate Trigger Current, max. TVJ =25℃ , VD =6V 150 mA VGD Non-triggering gate voltage, max. TVJ=125℃,VD =2/3VDRM 0.25 V IGD Non-triggering gate current, max. TVJ =125℃, VD =2/3VDRM 10 mA IL Latching current, max. TVJ =25℃ , RG = 33 Ω 300 1000 mA IH Holding current, max. TVJ =25℃ , VD =6V 150 400 mA tgd Gate controlled delay time TVJ=25℃, IG=1A, diG/dt=1A/us tq Circuit commutated turn-off time TVJ =TVJM Document Number: MSFC160 Dec.20, 2010 1 us 100 us www.smsemi.com 2 MSFC160 Performance Curves 300 300 A W rec.120 200 DC 240 sin.180 DC rec.60 180 sin.180 rec.30 rec.120 120 100 rec.60 rec.30 60 PTAV 0 ITAVM 0 ITAV 50 100 150 A 200 0 0 Tc Fig1. Power dissipation 100 6000 Zth(j-S) ℃/ W Zth(j-C) 0.1 0.001 t 0.01 0.1 1 10 S 100 50HZ A 3000 0 10 Fig3. Transient thermal impedance 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 600 A ℃ 130 Fig2.Forward Current Derating Curve 0.30 0 50 Typ. 400 125℃ max. 200 25℃ - - -125℃ IT 0 0 VTM 0.5 1.0 1.5 V 2.0 Fig5. Forward Characteristics Document Number: MSFC160 Dec.20, 2010 www.smsemi.com 3 MSFC160 100 1/2·MSFC160 V 20V;20Ω 10 VGT ∧ 1 Tvj PG(tp) -40℃ 25℃ 125℃ VGD125℃ VG IGT IGD125℃ 0.1 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: F2 × Dimensions in mm Document Number: MSFC160 Dec.20, 2010 www.smsemi.com 4