Diodes DMN10H700S-7 Low gate threshold voltage Datasheet

DMN10H700S
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON)
ID
TA = +25°C
700mΩ @ VGS = 10V
0.70A
900mΩ @ VGS = 6.0V
0.62A
PRODUCT
ADVANCED NEW
INFORMATION
V(BR)DSS
100V
Features and Benefits
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
•
•
•
Applications
•
•
•
•
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
•
•
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish Annealed over Alloy 42
Leadframe).
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
D
D
G
S
G
S
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN10H700S-7
DMN10H700S-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
700 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
700
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb
2
DMN10H700S
Document number: DS38103 Rev. 2 - 2
Mar
3
2017
E
Apr
4
2018
F
May
5
Jun
6
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2019
G
Jul
7
2020
H
Aug
8
Sep
9
2021
I
Oct
O
2022
J
Nov
N
Dec
D
April 2016
© Diodes Incorporated
DMN10H700S
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Unit
V
V
ID
Value
100
±20
0.70
0.56
Pulsed Drain Current (10μs Pulse, Duty Cycle ≦1%)
IDM
2.5
A
Maximum Body Diode Continuous Current (Note 6)
IS
0.6
A
Drain-Source Voltage
Gate-Source Voltage
PRODUCT
ADVANCED NEW
INFORMATION
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Symbol
(Note 5)
(Note 6)
Value
0.4
0.5
303
239
88
-55 to +150
PD
Steady state
(Note 6)
RθJA
RθJA
RθJC
TJ, TSTG
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
100






1
±100
V
µA
nA
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
RDS(ON)
2.7
540
550
0.9
4.0
700
900
1.1
V
Static Drain-Source On-Resistance
2.0



mΩ
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.5A
VGS = 6.0V, ID = 1.0A
VGS = 0V, IS = 1.5A
Ciss
Coss
Crss
RG



235
7
5



pF
VDS = 50V, VGS = 0V,
f = 1.0MHz

Ω
VDS = 0V, VGS = 0V, f = 1.0MHz









1.9
4.6
1.1
1.6
2.5
1.1
5.4
1.0
22
15

Qg
Qgs
Qgd
nC
VDS = 50V, VGS = 10V,
ID = 1.0A
ns
VDS = 50V, ID = 1.0A,
VGS = 10V, RG = 6.0Ω
ns
nC
VR = 100V, IF=1.8A, di/dt=100A/µs
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
VSD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR









V
Test Condition
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN10H700S
Document number: DS38103 Rev. 2 - 2
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© Diodes Incorporated
DMN10H700S
3
4.0
VGS=10.0V
2.5
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
2.5
VGS=6.0V
3.0
VGS=4.5V
2.0
1.5
1.0
VGS=3.8V
0.5
2
1.5
1
150℃
25℃
-55℃
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
1
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
2
1.8
1.6
1.4
1.2
VGS=6V
1
0.8
0.6
VGS=10V
0.4
0.2
0
0
0.5
1
1.5
2
2.5
3
3.5
5
4
150℃
3
125℃
1
0
0
0.5
1
1.5
2
2.5
3
3.5
7
6
5
4
3
2
ID=1.0A
1
0
4
Document number: DS38103 Rev. 2 - 2
8
12
16
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
4
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
DMN10H700S
6
8
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
VGS= 10V
-55℃ 25℃
5
9
4
6
85℃
4
10
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
85℃
125℃
0.5
VGS=4.0V
0.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
PRODUCT
ADVANCED NEW
INFORMATION
VDS=5V
VGS=5.0V
3.5
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2.5
2
VGS=10V, ID=1.5A
1.5
1
0.5
0
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
April 2016
© Diodes Incorporated
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
1.6
1.4
1.2
1
VGS=10V, ID=1.5A
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75
100
125
4
3.5
2.5
ID=250μA
2
1.5
1
0.5
0
-50
150
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
1000
CT, JUNCTION CAPACITANCE (pF)
5
IS, SOURCE CURRENT (A)
ID=1mA
3
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
4
VGS=0V,TJ=85℃
3
VGS=0V,TJ=125℃
2
VGS=0V,
TJ=25℃
VGS=0V,TJ=150℃
VGS=0V,
TJ=-55℃
1
f=1MHz
Ciss
100
Coss
10
Crss
1
0
0
0.3
0.6
0.9
1.2
0
1.5
5
10
15
20
25
30
35
40
45
50
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
10
RDS(ON) Limited
ID, DRAIN CURRENT (A)
8
VGS (V)
PRODUCT
ADVANCED NEW
INFORMATION
DMN10H700S
6
VDS=50V, ID=1A
4
0.1
0.01
0.001
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Document number: DS38103 Rev. 2 - 2
PW =100ms
PW =1s
TJ(MAX)=150℃
TC=25℃
Single Pulse
DUT on 1*MRP board PW =10s
DC
VGS=10V
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Qg (nC)
Figure 11. Gate Charge
DMN10H700S
PW =100μs
PW =10ms
1
2
PW =1ms
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DMN10H700S
PRODUCT
ADVANCED NEW
INFORMATION
r(t), TRANSIENT THERMAL RESISTANCE
1
D=0.5
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-05
0.0001
RθJA(t)=r(t) * RθJA
RθJA=301℃ /W
Duty Cycle, D=t1 / t2
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMN10H700S
Document number: DS38103 Rev. 2 - 2
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DMN10H700S
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PRODUCT
ADVANCED NEW
INFORMATION
SOT23
All 7°
H
K1
GAUGE PLANE
0.25
J
K
a
M
A
L
C
L1
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0°
8°
-All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
C
Y1
X
DMN10H700S
Document number: DS38103 Rev. 2 - 2
Dimensions
C
X
X1
Y
Y1
Value (in mm)
2.0
0.8
1.35
0.9
2.9
X1
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DMN10H700S
IMPORTANT NOTICE
PRODUCT
ADVANCED NEW
INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
DMN10H700S
Document number: DS38103 Rev. 2 - 2
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