Diodes DMN61D9UWQ-13 N-channel enhancement mode mosfet Datasheet

DMN61D9UWQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
BVDSS
RDS(ON) max
60V
2Ω @ VGS = 5.0V
2.5Ω @ VGS = 2.5V
ID max
TA = +25°C
340mA
300mA
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications:




Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected Up To 2kV


Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

PPAP Capable (Note 4)
Mechanical Data
Motor Control
Power Management Functions
Backlighting

Case: SOT323

Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish  Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208

Weight: 0.006 grams (Approximate)
D
SOT323
D
G
Gate Protection
Diode
ESD protected up to 2kV
Top View
S
G
S
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN61D9UWQ-7
DMN61D9UWQ-13
Notes:
Case
SOT323
SOT323
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
1AC= Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2017
E
Jan
1
2018
F
Feb
2
DMN61D9UWQ
Document number: DS39554 Rev. 1 - 2
2019
G
Mar
3
Apr
4
2020
H
May
5
2021
I
Jun
6
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2022
J
Jul
7
Aug
8
2023
K
Sep
9
2024
L
Oct
O
2025
M
Nov
N
Dec
D
April 2017
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DMN61D9UWQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 5.0V
Steady
State
t<5s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
60
±20
340
270
ID
mA
400
300
0.4
1.2
ID
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 7)
Unit
V
V
IS
IDM
mA
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
t<5s
Total Power Dissipation (Note 7)
Steady State
t<5s
Operating and Storage Temperature Range
RθJA
TJ, TSTG
Unit
mW
°C/W
mW
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
RθJA
PD
Thermal Resistance, Junction to Ambient (Note 7)
Electrical Characteristics
Value
320
393
306
440
289
235
-55 to +150
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
—
—
—
—
—
—
1.0
±10
V
µA
µA
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
0.5
—
1.0
V
RDS(ON)
—
1.2
1.6
2.5
2.0
2.5
3.5
Ω
|Yfs|
VSD
200
—
—
0.75
—
1.4
mS
V
VDS = 10V, ID = 250µA
VGS = 5.0V, ID = 0.05A
VGS = 2.5V, ID = 0.05A
VGS = 1.8V, ID = 0.05A
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
—
28.5
3.9
2.5
65
0.4
0.1
0.1
2.1
1.8
14.4
8.4
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
tD(ON)
tR
tD(OFF)
tF
Test Condition
VDS = 30V, VGS = 0V
f = 1.0MHz
f = 1MHz , VGS = 0V, VDS = 0V
VGS = 4.5V, VDS = 10V,
ID = 250mA
VDD = 30V, VGS = 10V,
RG = 25Ω, ID = 200mA
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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1.0
0.8
VDS = 5.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.8
VGS = 10V
VGS = 4.5V
0.6
VGS = 3.0V
VGS = 2.5V
0.4
VGS = 2.0V
VGS = 1.8V
0.2
0.6
0.4
T A = 150C
0.2
TA = 125C
TA = 85C
T A = 25C
VGS = 1.5V
TA = -55 C
0.0
1
2
3
4
V DS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3.5
3
2.5
VGS = 2.5V
1.5
1
VGS = 5.0V
0.5
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
4
2
0.2
0.4
0.6
0.8
ID , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
0.5
5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
3
2.5
I D = 50mA
2
1.5
1
1
0
5
10
15
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
20
2.2
4.5
VGS = 2.5V
VGS = 4.5V
4
2
RD S(ON ), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
0
3.5
3
TA = 150C
2.5
T A = 125 C
TA = 85C
2
1.5
T A = 25C
1
T A = -55C
0.5
0
0
0.2
0.4
0.6
0.8
ID , DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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I D = 50mA
1.8
1.6
VGS = 5.0V
1.4
I D = 50mA
1.2
1
0.8
0.6
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Junction
Temperature
150
April 2017
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DMN61D9UWQ
4.5
VGS GATE THRESHOLD VOLTAGE (V)
CT , JUNCTION CAPACITANCE (pF)
100
Ciss
10
C oss
Crss
f=1MHz
f=
MHZ
5
VDS = 10V
3.5
I D = 250mA
3
2.5
2
1.5
1
0.5
0
1
0
4
10
15
20
25
30
35
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
40
0
0.1
0.2
0.3
0.4
0.5
Q g, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
10
ID, DRAIN CURRENT (A)
R DS(on)
Limited
1
0.1
DC
PW = 10s
PW = 1s
0.01
T J (m ax ) = 150°C
PW = 100ms
T C = 25°C
0.001
0.1
V GS = 5V
Single Pulse
DUT on 1 * MRP Board
PW = 10ms
PW = 1ms
PW = 100µs
1
10
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
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r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 391°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 12 Transient Thermal Resistance
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
D
A2
c
A1
e
a
L
b
E
E1
F
SOT323
Dim Min Max
Typ
A1 0.00 0.10
0.05
A2 0.90 1.00
0.95
b
0.25 0.40
0.30
c
0.10 0.18
0.11
D
1.80 2.20
2.15
E
2.00 2.20
2.10
E1 1.15 1.35
1.30
e
0.650 BSC
e1 1.20 1.40
1.30
F 0.375 0.475 0.425
L
0.25 0.40
0.30
a
0°
8°
-All Dimensions in mm
e1
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Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X
Y
Y1
G
Dimensions
C
G
X
Y
Y1
C
Value
(in mm)
0.650
1.300
0.470
0.600
2.500
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2017, Diodes Incorporated
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