NTSS5100, NTSAF5100 Low Forward Voltage, Low Leakage Trench-based Schottky Rectifier Features www.onsemi.com • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance High Surge Capability These are Pb−Free and Halide−Free Devices SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS MARKING DIAGRAM Typical Applications • Switching Power Supplies including Wireless, Smartphone and • • • • • Notebook Adapters High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation LED Lighting SMB CASE 403A AYWW TH51G G SMA−FL CASE 403AA STYLE 6 AYWW H51G G Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTSS5100T3G SMB (Pb−Free) 5000 / Tape & Reel NTSAF5100T3G SMA−FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 1 1 Publication Order Number: NTSS5100/D NTSS5100, NTSAF5100 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V 100 Average Rectified Forward Current (TL = 73°C) IF(AV) 5.0 A Peak Repetitive Forward Current, (Square Wave, 20 kHz, TL = 54°C) IFRM 10 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C ESD Rating (Human Body Model) 1B ESD Rating (Machine Model) M3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Maximum Thermal Resistance, Steady State (Note 1) (NTSAF5100) Junction−to−Lead RθJL 25 Junction−to−Ambient RθJA 90 Junction−to−Lead RθJL 13.1 Junction−to−Ambient RθJA 71.1 (NTSS5100) 1. Assumes 600 mm2 °C/W 1 oz. copper bond pad, on a FR4 board ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 1) (iF = 3.0 Amps, TJ = 25°C) (iF = 5.0 Amps, TJ = 25°C) vF (iF = 3.0 Amps, TJ = 125°C) (iF = 5.0 Amps, TJ = 125°C) Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) iR Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) Cd Typ Max 0.56 0.65 − 0.69 0.50 0.56 − 0.61 2.6 2.2 25 9 Unit V mA mA pF 54.4 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NTSS5100, NTSAF5100 TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) TA = 25°C 10 TA = 150°C TA = 125°C 1 TA = 85°C 0.6 0.8 1.0 1.2 TA = 150°C 1.E−03 TA = 125°C 1.E−04 TA = 85°C 1.E−05 TA = 25°C 1.E−06 20 30 40 50 60 70 80 90 100 C, JUNCTION CAPACITANCE (pF) 1 1.E−01 TA = 150°C 1.E−02 TA = 125°C 1.E−03 TA = 85°C 1.E−04 TA = 25°C 1.E−05 1.E−06 10 20 30 40 50 60 70 80 90 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 TJ = 25°C 100 0.1 TA = 25°C TA = 85°C Figure 2. Maximum Instantaneous Forward Characteristics 1.E−02 10 10 Figure 1. Typical Instantaneous Forward Characteristics 0.4 1.E−01 1.E−07 10 TA = 125°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 0.2 IR, INSTANTANEOUS REVERSE CURRENT (A) 0 TA = 150°C TA = −55°C 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VF, INSTANTANEOUS FORWARD VOLTAGE (V) TA = −55°C IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 1 10 100 9 RqJL = 13.1°C/W DC 8 7 6 Square Wave 5 4 3 2 1 0 0 20 40 60 80 100 120 VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating for NTSS5100 www.onsemi.com 3 140 10 NTSS5100, NTSAF5100 IF(AV), AVERAGE FORWARD CURRENT (A) PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) TYPICAL CHARACTERISTICS 18 16 IPK/IAV = 20 14 12 IPK/IAV = 10 10 IPK/IAV = 5 8 SQUARE WAVE 6 4 DC 2 0 0 1 2 3 4 5 6 7 9 RqJL = 25°C/W DC 8 7 6 Square Wave 5 4 3 2 1 0 0 20 40 60 80 100 120 140 IF(AV), Average Forward Current (A) TL, LEAD TEMPERATURE (°C) Figure 7. Forward Power Dissipation Figure 8. Current Derating for NTSAF5100 1000 R(t), (°C/W) 100 50% Duty Cycle 20% 10% 5% 10 2% 1 1% 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE TIME (S) Figure 9. Typical Transient Thermal Response, Junction−to−Ambient for NTSS5100 100 50% Duty Cycle 20% R(t), (°C/W) 10 10% 5% 2% 1 1% 0.1 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 10. Typical Transient Thermal Response, Junction−to−Ambient for NTSAF5100 www.onsemi.com 4 100 1000 NTSS5100, NTSAF5100 PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 NTSS5100, NTSAF5100 PACKAGE DIMENSIONS SMA−FL CASE 403AA ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c RECOMMENDED SOLDER FOOTPRINT* C SIDE VIEW SEATING PLANE 1.76 2X MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 5.56 b 1.30 2X L BOTTOM VIEW DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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