JMNIC BAP55L 2015 Silicon pin diode Datasheet

BAP55L
Silicon PIN diode
Rev. 01 — 5 April 2005
Preliminary data sheet
1. Product profile
1.1 General description
Planar PIN diode in a SOD882 leadless ultra small plastic SMD package.
1.2 Features
■ High speed switching for RF signals
■ Low diode capacitance
■ Low forward resistance
■ Very low series inductance
■ For applications up to 3 GHz
1.3 Applications
■ RF attenuators and switches
2. Pinning information
Table 1:
Discrete pinning
Pin
Description
1
cathode
2
anode
Simplified outline
Symbol
[1]
1
2
sym006
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 2:
Ordering information
Type number Package
BAP55L
Name
Description
Version
-
leadless ultra small plastic package; 2 terminals; body
1.0 × 0.6 × 0.5 mm
SOD882
BAP55L
Philips Semiconductors
Silicon PIN diode
4. Marking
Table 3:
Marking
Type number
Marking code
BAP55L
E6
5. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
VR
reverse voltage
Conditions
-
50
V
IF
forward current
-
100
mA
Ptot
total power dissipation
-
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
Typ
Unit
100
K/W
Ts = 90 °C
6. Thermal characteristics
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-sp)
thermal resistance from junction
to soldering point
7. Characteristics
Table 6:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
VF
forward voltage
IR
reverse current
Cd
rD
diode capacitance
diode forward
resistance
Conditions
Min
Typ
Max
Unit
IF = 50 mA
-
0.95
1.1
V
VR = 20 V
-
-
10
nA
VR = 50 V
-
-
0.1
µA
VR = 0 V
-
0.27
-
pF
VR = 1 V
-
0.23
-
pF
VR = 20 V
-
0.18
0.28
pF
IF = 0.5 mA
-
3.4
4.5
Ω
IF = 1 mA
-
2.3
3.3
Ω
IF = 10 mA
-
0.8
1.2
Ω
IF = 100 mA
-
0.4
0.7
Ω
f = 1 MHz; Figure 2
f = 100 MHz; Figure 1
9397 750 14811
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 5 April 2005
2 of 8
BAP55L
Philips Semiconductors
Silicon PIN diode
Table 6:
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
|s12|2
VR = 0 V; Figure 4
|s21|2
isolation
insertion loss
Min
Typ
Max
Unit
f = 900 MHz
-
17.6
-
dB
f = 1800 MHz
-
13
-
dB
f = 2450 MHz
-
11.1
-
dB
f = 900 MHz
-
0.25
-
dB
f = 1800 MHz
-
0.27
-
dB
f = 2450 MHz
-
0.29
-
dB
f = 900 MHz
-
0.17
-
dB
f = 1800 MHz
-
0.19
-
dB
f = 2450 MHz
-
0.21
-
dB
f = 900 MHz
-
0.07
-
dB
f = 1800 MHz
-
0.09
-
dB
f = 2450 MHz
-
0.12
-
dB
f = 900 MHz
-
0.05
-
dB
f = 1800 MHz
-
0.07
-
dB
f = 2450 MHz
-
0.09
-
dB
-
0.28
-
µs
-
0.6
-
nH
IF = 0.5 mA; Figure 3
IF = 1 mA; Figure 3
IF = 10 mA; Figure 3
IF = 100 mA; Figure 3
τL
charge carrier life
time
LS
series inductance
when switched from
IF = 10 mA to IR = 6 mA;
RL = 100 Ω; measured at
IR = 3 mA
9397 750 14811
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 5 April 2005
3 of 8
BAP55L
Philips Semiconductors
Silicon PIN diode
001aac628
102
001aac629
400
Cd
(fF)
rD
(Ω)
300
10
200
1
100
10−1
10−1
1
102
10
0
0
5
10
15
IF (mA)
f = 100 MHz; Tj = 25 °C.
f = 1 MHz; Tj = 25 °C.
Fig 1. Forward resistance as a function of forward
current; typical values
001aac630
0
|S21|2
(dB)
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
001aac631
0
(1)
|S12|2
(dB)
(2)
(3)
−0.25
20
VR (V)
−10
(4)
−0.50
−20
−0.75
−30
−1.00
−40
0
1
2
3
0
f (MHz)
1
2
3
f (MHz)
Diode zero biased and inserted in series with a 50 Ω
stripline circuit.
(1) IF = 100 mA.
(2) IF = 10 mA.
Tamb = 25 °C.
(3) IF = 1 mA.
(4) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit
and biased via the analyzer Tee network.
Tamb = 25 °C.
Fig 3. Insertion loss (|s21|2) of the diode as a function
of frequency; typical values
Fig 4. Isolation (|s12|2) of the diode as a function of
frequency; typical values
9397 750 14811
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 5 April 2005
4 of 8
BAP55L
Philips Semiconductors
Silicon PIN diode
8. Package outline
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
L
SOD882
L
1
2
b
e1
A
A1
E
D
(2)
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
D
E
e1
L
mm
0.50
0.46
0.03
0.55
0.47
0.62
0.55
1.02
0.95
0.65
0.30
0.22
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
03-04-16
03-04-17
SOD882
Fig 5. Package outline SOD882
9397 750 14811
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 5 April 2005
5 of 8
BAP55L
Philips Semiconductors
Silicon PIN diode
9. Revision history
Table 7:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
BAP55L_1
20050405
Preliminary data sheet
-
9397 750 14811
-
9397 750 14811
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 5 April 2005
6 of 8
BAP55L
Philips Semiconductors
Silicon PIN diode
10. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
12. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14811
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 5 April 2005
7 of 8
BAP55L
Philips Semiconductors
Silicon PIN diode
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
8
9
10
11
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
General description. . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal characteristics. . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information . . . . . . . . . . . . . . . . . . . . .
1
1
1
1
1
1
2
2
2
2
5
6
7
7
7
7
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 5 April 2005
Document number: 9397 750 14811
Published in The Netherlands
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