EMD59 Complex Digital Transistors (Bias Resistor Built-in Transistors) <For DTr1(NPN)> Datasheet l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 10kΩ EMD59 R2 47kΩ (SC-107C) EMT6 <For DTr2(PNP)> Parameter VCC Value IC(MAX.) -100mA R1 10kΩ R2 47kΩ -50V l Features 1) DTA014Y and DTC014Y chip in a EMT6 package. 2) Transister elements are independent, eliminating interface. 3) Mounting cost and area can be cut in half. 4) Lead Free/RoHS Compliant. l Inner circuit l Application Switching circuit, Inverter circuit, Interface circuit, Driver circuit l Packaging specifications Part No. EMD59 Package Package size Taping code EMT6 1616 T2R www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/7 Reel size Tape width (mm) (mm) 180 8 Basic ordering unit.(pcs) Marking 8000 D59 20131001 - Rev.002 EMD59 Datasheet l Absolute maximum ratings (Ta = 25°C) Parameter Symbol DTr1(NPN) DTr2(PNP) Unit VCC 50 -50 V VIN 40 to -6 -40 to 6 V IO 70 -70 mA *1 IC(MAX) 100 -100 mA *2 *3 PD 150(Total) mW/Total Tj 150 ℃ Supply voltage Input voltage Output current Collector current Power dissipation Junction temperature Range of storage temperature Tstg ℃ -55 to +150 l Electrical characteristics (Ta = 25°C) <For DTr1(NPN)> Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 f T*1 Conditions VCC = 5V, IO = 0.1mA VO = 0.3V, IO = 5mA IO / I I = 5mA / 0.5mA VI = 5V VCC = 50V, VI = 0V VO = 10V, IO = 5mA VCE = 10V, IE = -5mA, f = 100MHz Min. - Values Typ. - Max. 0.3 1.7 - 0.05 0.15 80 - 0.88 0.5 - mA μA - 7 3.7 10 4.7 13 5.7 kΩ - - 250 - MHz Min. - Values Typ. - Max. -0.3 -1.7 - -0.07 - -0.15 -0.88 V mA - - -0.5 μA 10 13 kΩ Unit V V l Electrical characteristics (Ta = 25°C) <For DTr2(PNP)> Parameter Symbol Conditions VI(off) VI(on) VCC = -5V, IO = -0.1mA VO = -0.3V, IO = -5mA Output voltage Input current VO(on) Output current IO(off) GI IO / I I = -5mA / -0.5mA VI = -5V VCC = -50V, VI = 0V Input voltage DC current gain Input resistance Resistance ratio Transition frequency II VO = -10V, IO = -5mA Unit V R1 - 80 7 R2/R1 - 3.7 4.7 5.7 - - 250 - MHz f T*1 VCE = -10V, IE = 5mA, f = 100MHz *1 Characteristics of built-in transistor. *2 terminal mounted on a reference footprint. *3 120mW per element must not be exceeded. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/7 20131001 - Rev.002 EMD59 Datasheet l Electrical characteristic curves(T a=25°C) <For DTr1(NPN)> Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 Output current vs. output voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Fig.4 DC current gain vs. output current 3/7 20131001 - Rev.002 EMD59 Datasheet l Electrical characteristic curves(T a=25°C) <For DTr1(NPN)> Fig.5 Output voltage vs. output current www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 4/7 20131001 - Rev.002 EMD59 Datasheet l Electrical characteristic curves(T a=25°C) <For DTr2(PNP)> Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 Output current vs. output voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Fig.4 DC current gain vs. output current 5/7 20131001 - Rev.002 EMD59 Datasheet l Electrical characteristic curves(T a=25°C) <For DTr2(PNP)> Fig.5 Output voltage vs. output current www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 6/7 20131001 - Rev.002 EMD59 Datasheet l Dimensions www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 7/7 20131001 - Rev.002