ON MMBT5551M3 Npn high voltage transistor Datasheet

MMBT5551M3
NPN High Voltage
Transistor
The MMBT5551M3 device is a spin−off of our popular SOT−23
three−leaded device. It is designed for general purpose high voltage
applications and is housed in the SOT−723 surface mount package.
This device is ideal for low−power surface mount applications where
board space is at a premium.
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COLLECTOR
3
Features
• Reduces Board Space
• NSV Prefix for Automotive and Other Applications Requiring
•
1
BASE
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
160
Vdc
Collector −Base Voltage
VCBO
180
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
60
mAdc
Collector Current − Continuous
Total Device Dissipation
FR− 5 Board (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Junction and Storage Temperature
3
2
Symbol
Max
SOT−723
CASE 631AA
STYLE 1
AH M
1
AH
M
THERMAL CHARACTERISTICS
Characteristic
MARKING
DIAGRAM
= Specific Device Code
= Date Code
Unit
PD
mW
265
mW/°C
2.1
RqJA
°C/W
470
ORDERING INFORMATION
Package
Shipping†
SOT−723
(Pb−Free)
8000 / Tape &
Reel
NSVMMBT5551M3T5G SOT−723
(Pb−Free)
8000 / Tape &
Reel
Device
MMBT5551M3T5G
PD
640
mW
5.1
mW/°C
RqJA
195
°C/W
TJ, Tstg
−55 to
+150
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 3
1
Publication Order Number:
MMBT5551M3/D
MMBT5551M3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
160
−
180
−
6.0
−
−
−
100
100
−
50
80
80
30
−
250
−
−
−
0.15
0.20
−
−
1.0
1.0
−
−
50
100
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
ICBO
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
nAdc
mAdc
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
Collector Emitter Cut−off
(VCB = 10 V)
(VCB = 75 V)
−
Vdc
Vdc
ICES
nA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
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2
MMBT5551M3
TYPICAL CHARACTERISTICS
500
300
h FE, DC CURRENT GAIN
VCE = 1.0 V
VCE = 5.0 V
TJ = 125°C
200
25°C
100
-55°C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
IC, COLLECTOR CURRENT (mA)
10
20
30
50
70
100
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA
10 mA
100 mA
30 mA
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
10
20
50
Figure 2. Collector Saturation Region
101
1.0
TJ = 25°C
100
10-1
0.8
TJ = 125°C
10-2
IC = ICES
75°C
REVERSE
10-3
FORWARD
25°C
10-4
10-5
0.4
V, VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (A)
μ
VCE = 30 V
VBE(sat) @ IC/IB = 10
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.3
0.2 0.1
0
0.1
0.2 0.3
0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0.5
0.6
0.1
Figure 3. Collector Cut−Off Region
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
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3
50
100
MMBT5551M3
TYPICAL CHARACTERISTICS
θV, TEMPERATURE COEFFICIENT (mV/ °C)
2.5
2.0
TJ = - 55°C to +135°C
1.5
1.0
Vin
0
- 1.0
qVB for VBE(sat)
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
- 1.5
- 2.0
- 2.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30
IC, COLLECTOR CURRENT (mA)
50
100
Vout
5.1 k
Vin
100
1N914
1000
IC/IB = 10
TJ = 25°C
500
300
20
200
t, TIME (ns)
C, CAPACITANCE (pF)
RB
TJ = 25°C
10
Cibo
7.0
5.0
Cobo
3.0
tr @ VCC = 120 V
tr @ VCC = 30 V
100
50
td @ VEB(off) = 1.0 V
30
VCC = 120 V
20
2.0
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
10
0.2 0.3 0.5
20
VR, REVERSE VOLTAGE (VOLTS)
20 30
2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
Figure 8. Turn−On Time
1.0
50
100
200
1
5000
2000
IC/IB = 10
TJ = 25°C
IC, COLLECTOR CURRENT (A)
tf @ VCC = 120 V
3000
tf @ VCC = 30 V
1000
t, TIME (ns)
RC
Figure 6. Switching Time Test Circuit
30
500
300
3.0 k
Values Shown are for IC @ 10 mA
Figure 5. Temperature Coefficients
100
70
50
VCC
30 V
100
0.25 mF
10 ms
INPUT PULSE
- 0.5
1.0
0.2
VBB
-8.8 V
10.2 V
qVC for VCE(sat)
0.5
ts @ VCC = 120 V
200
100
50
0.2 0.3 0.5
20 30 50
1.0 2.0 3.0 5.0
10
IC, COLLECTOR CURRENT (mA)
100
1 s 100 ms 10 ms 1 ms 100 ms 10 ms
0.1
0.01
0.001
200
1
Figure 9. Turn−Off Time
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 10. Safe Operating Area
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4
MMBT5551M3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
HE
2
2X
2X
b
e
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
1
3X
L2
RECOMMENDED
SOLDERING FOOTPRINT*
BOTTOM VIEW
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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PUBLICATION ORDERING INFORMATION
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MMBT5551M3/D
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