UTC MJE13011-T3P-T High voltage high speed power switching transistor Datasheet

UNISONIC TECHNOLOGIES CO.,LTD
MJE13011
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED
SWITCHING
FEATURES
* High voltage, high speed switching
* High reliability
1
TO-3P
*Pb-free plating product number: MJE13011L
PIN CONFIGURATION
PIN NO.
1
2
3
PIN NAME
BASE
COLLECTOR
EMITTER
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MJE13011-T3P-T MJE13011L-T3P-T
Package
Packing
TO-3P
Tube
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,LTD
1 of 4
QW-R214-010,B
MJE13011
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC = 25℃)
PARAMETER
Collector Base Voltage
SYMBOL
VCBO
VCEO
VCEO(SUS)
VEBO
IC
IB
PD
TJ
TSTG
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
RATINGS
450
400
400
7
10
3
80
+150
-40 ~ +150
UNIT
V
V
V
V
A
A
W
℃
℃
ELECTRICAL SPECIFICATIONS (TC =25℃, Unless Otherwise Specified.)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Switching Time
SYMBOL
VCBO
VCEO
VCEO (SUS)
VEBO
VCE (SAT)
VBE (SAT)
ICBO
IEBO
hFE
tON
tSTG
tF
TEST CONDITIONS
ICBO=1mA
ICEO=10mA
IC=1A
IEBO=0.1mA
MIN
450
400
400
7
TYP
IC=4A, IB=0.8A
VCBO=450V
VEBO=7V
IC=4A, VCE=5V
MAX
1.2
1.5
1.0
0.1
UNIT
V
V
V
V
V
V
mA
mA
1.0
2.0
1.0
µs
µs
µs
10
IC=7.5A, IB1=-IB2=1.5A
RL=20Ω, Pw=20µs, Duty ≤ 2%
CLASSIFICATION of hFE
RANK
RANGE
A
10 ~ 16
B
15 ~ 21
C
20 ~ 26
D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
THERMAL DATA
PARAMETER
Thermal Resistance Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJC
RATINGS
1.55
UNIT
℃/W
2 of 4
QW-R214-010,B
MJE13011
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
RL=20Ω
IB1
IB1
IB2
IC
IB2
0.9IC
IC
0.1IC
PW=20μs
tON
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tSTG
tF
3 of 4
QW-R214-010,B
MJE13011
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Output Characteristics
14
A
9 00 m
70 0 mA
10
DC Current Gain, hFE
Collector Current, IC (A)
300
200
T C=25℃
12
5 00 mA
8
300mA
6
200mA
4
IB =100mA
2
0
DC Current Gain
0
2
4
6
8
10
12
VCE=5V
100
T C=120℃
50
30
25℃
-20℃
-40℃
10
5
3
1
0.03 0.05 0.1
14
0.3 0.5
Collector Current, IC (A)
Saturation Voltage, VCE (SAT), VBE (SAT) (V)
TC=25℃
10 Single Pulse
0.5
0.3
VCE(SAT)
0.1
0.05
0.03
0.01
0.03 0.05 0.1
0.3 0.5
1
3
10
30
TC=25℃
IC=5IB
VBE(SAT)
5
Safe Operating Area
Base and Collector Saturation Voltage
1
3
Collector Current, I C (A)
Collector Emitter Voltage, VCE (V)
3
1
5
10
50μs
5
3
100μs
200μs
1
500μs
0.5
0.3
PW=1ms
0.1
0.05
0.03
1
3
5
10
30 50 100
300 500
Collector Emitter Voltage, VCE (V)
Collector Current, IC (A)
Switching Time
3
T C=25℃
I C=5IB1 =5IB2
Switching Time (µs)
t STG
1
tON
0.5
0.3
0.1
0.3
tF
0.5
1
3
5
10
Collector Current, IC (A)
UTC assum es no responsibility for equipm ent failures that result from using products at values that
exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R214-010,B
Similar pages