DATA SHEET MBRX120WS Thru MBRX140WS SEMICONDUCTOR H Plastic-Encapsulate SCHOTTKY BARRIER DIODE SOD-323 FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: MBRX120WS: SJ MBRX130WS:SK MBRX140WS: SL Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol MBRX120WS MBRX130WS MBRX140WS Unit Non-Repetitive Peak reverse voltage VRM 20 30 40 V Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V VR(RMS) 14 21 28 V RMS Reverse Voltage 1 IO Average Rectified Output Current A Peak forward surge current @=8.3ms IFSM 25 A Repetitive Peak Forward Current IFRM 625 mA Power Dissipation Pd 250 mW RθJA 500 ℃/W TSTG -65~+150 ℃ Thermal Ambient Resistance Junction Storage temperature to ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test IR= 1mA Reverse breakdown voltage Reverse voltage leakage current V(BR) IR VR=20V VR=30V VR=40V otherwise conditions MBRX120WS MBRX130WS MBRX140WS MBRX120WS MBRX130WS MBRX140WS MBRX120WS Forward voltage VF MBRX130WS MBRX140WS Diode capacitance http://www.yeashin.com CD VR=4V, f=1MHz 1 specified) MIN MAX 20 30 40 UNIT V 0.1 IF=1A 0.45 IF=3A 0.75 IF=1A 0.55 IF=3A 0.875 IF=1A 0.6 IF=3A 0.9 120 mA V V V pF REV.02 20120705 DEVICE CHARACTERISTICS MBRX120WS Thru MBRX140WS http://www.yeashin.com 2 REV.02 20120705 PACKAGE OUTLINE & DIMENSIONS MBRX120WS Thru MBRX140WS SOD323 Symbol A A1 A2 b c D E E1 L L1 θ http://www.yeashin.com Unit:inch(mm) D imensions In Millimeters Min Max 1.000 0.000 0.100 0.800 0.900 0.250 0.350 0.080 0.150 1.200 1.400 1.600 1.800 2.500 2.700 0.475 REF 0.250 0.400 0° 8° 3 D imensions In Inches Min Max 0.039 0.000 0.004 0.031 0.035 0.010 0.014 0.003 0.006 0.047 0.055 0.063 0.071 0.098 0.106 0.019 REF 0.010 0.016 0° 8° REV.02 20120705