MSP3099 -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V Lead Free ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●PWM applications ●Load switch ●Power management Marking and Pin Assignment PIN Configuration D G S Schematic diagram SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSP3099 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit -30 V ±12 V -4.2 A -30 A 1.2 W -55 To 150 ℃ 104 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) MORE Semiconductor Company Limited RθJA http://www.moresemi.com 1/6 MSP3099 Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V VGS(th) Typ Max Unit - V - -1 μA - - ±100 nA VDS=VGS,ID=-250μA -0.7 -1 -1.3 V VGS=-10V, ID=-4.2A - 50 55 mΩ VGS=-4.5V, ID=-4A - 64 75 mΩ 95 130 mΩ - 10 - S - 950 - PF - 115 - PF Off Characteristics On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-1A Forward Transconductance gFS VDS=-5V,ID=-4.2A Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss - 75 - PF Turn-on Delay Time td(on) - 7 - nS Turn-on Rise Time tr VDD=-15V,ID=-3.2A - 3 - nS td(off) VGS=-10V,RGEN=6Ω - 30 - nS VDS=-15V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf - 12 - nS Total Gate Charge Qg - 9.5 - nC Gate-Source Charge Qgs - 2 - nC Gate-Drain Charge Qgd - 3 - nC - - -1.2 V VDS=-15V,ID=-4A,VGS=-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSP3099 Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms ID- Drain Current (A） PD Power(W) Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) Figure 3 Power Dissipation Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 5 Output Characteristics MORE Semiconductor Company Limited ID- Drain Current (A) Figure 6 Drain-Source On-Resistance http://www.moresemi.com 3/6 ID- Drain Current (A) Normalized On-Resistance MSP3099 TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge MORE Semiconductor Company Limited Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward http://www.moresemi.com 4/6 ID- Drain Current (A) MSP3099 Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance MORE Semiconductor Company Limited http://www.moresemi.com 5/6 MSP3099 SOT-23 Package Information Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. MORE Semiconductor Company Limited http://www.moresemi.com 6/6