NJSEMI L9U Opto electronics detectors-programmable unijunction transistor Datasheet

^zmi-donducto'i ^Pioduati, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
OPTO ELECTRONICS
DETECTORS-PROGRAMMABLE UNIJUNCTION TRANSISTORS
Irraoiance to
Trigger
<S> Rg^SOOK'.!, Vs = 10V
Max.
Forward on Voltage
VT
Max.
(V)
Max.
(ma)
RiseTin-e
t,
Typica
(nsec)
(mw;
Package
Type
Package
Outline
Mo.
Specification
Sheet
No.
100
80
ImW/Cm2
1.5
200
TO-92
263
55.54
D.C. Anode
Current
Max.
GE Type
ilnode-Cathdde
Voltage
Max.
(V)
L14T
±40
P;
OPTO ELECTRONICS
DETECTORS-SCSs
CET/pe
Voltage
/mode to Cathode
-"orward and Reverse
Man.
Cathode Gate Currert
to Fire
Forward Voltage
al 175ma Anode Curren t
Holding
Current
<S> Ro. = 27k!!
(a) R,,,. = 27kn
(V)
Max.
(mA)
2.3
|*g$|*
Max.
<v;
L1V
@ VAC = 40V
RA = 800H
Max.
(;iA)
Effective Irradiance
To Trigger
Max.
Package
Type
Package
Outline
No.
Specification
Sheet
No.
lOmW/Cm'
TO-18
53
55.41
@ VAC — 40V
RA = 800!!
10
OPTO ELECTRONICS
DETECTORS-SCR's
Inc <a 25°C
Max
GE Type
PflV/Vso
L8U
»
L8F
UA
••»'•
L86
L8G
L81IU
L811F
too
t»
25
LflllB
L811G
'isr*
L9B
L9G
L911U
L911F
.77
.77
.77
»'•
100
L9U
L9F
L9A
.44
.44
200
[aim
.77
.77
200
25
.
-SB I
m'
158
W
25
50
L911A
L911B
L911G
(«r
.44
.44
.44
I*
1» '
200
.44
.44
.44
.44
.44
.77
.77
.77
.77
.77
Max. Temp. °c
Opei.
MV
«r
100"
ISO*
.190*
49B»
wo°
Effective Irradiance
(mw/cm!) to Trigger '
at25°C TJ, 6Vdc
Stor.
Max.
NO.
Snee! No.
0.68
0.68
0.68
0.68
0.68
10.0
10.0
10.0
101
101
10.0
10.0
101
101
190.10
190.10
190.10
190.10
190.10
102
102
102
102
102
190.10
190.10
190.10
190.10
190.10
Ml
101
1M
101
190.10
190.10
190.10
190.10
190.10
102
102
102
190.10
190.10
190.10
190.10
190.10
--a»»
«*•;
WP«.
tto»
.W
0.68
0.68
0.68
10.0
10.0
10.0
IW»
0.68
10.0
10.0
•m£:
«*- ?-w»
>«*>-;• •MSp».,
ioe»
108»
U»0°
a«o»
•'W
150»
-HP.
«0°
100° •' •'M0»
...^i-,.
iso»
100°
top"
108°
?63
no»
100°
109"
IMP'
^TT ' ,
Package
Outline
Win.
150°
150°
180°
0.68
0.68
0.68
0.68
4.2
4.2
4.2
0.68
0.68
4.2
4.2
0.68
0.68
0.68
0.68
0.68
4.2
4.2
4.2
4.2
4.2
W
iet
102
m
101
NOTE: Gate current to trigger from direct electrical supply is 20 «A typical, 200 #A maximum at 25°C Tj.
1
Effective Irradiance to trigger decreases with increasing anode voltage and increasing gate to cathode resistance.
NJ Semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without
nonce. Information fijrnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or>ing
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
-Conductors encourages customers to verify that datasheets are current before placing orders.
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