ON NRVTS10120EMFST1G Very low leakage trench-based schottky rectifier Datasheet

NTS10120EMFS,
NRVTS10120EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
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Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing Diodes
Reverse Battery Protection
LED Lighting
Instrumentation
•
MARKING
DIAGRAM
A
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TE1012
A
Y
W
ZZ
Mechanical Characteristics:
•
•
•
•
5,6
1,2,3
1
Typical Applications
•
•
•
•
•
TRENCH SCHOTTKY
RECTIFIERS
10 AMPERES
120 VOLTS
A
C
TE1012
AYWWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTS10120EMFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTS10120EMFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVTS10120EMFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVTS10120EMFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 0
1
Publication Order Number:
NTS10120EMFS/D
NTS10120EMFS, NRVTS10120EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
120
Average Rectified Forward Current
(Rated VR, TC = 165°C)
IF(AV)
10
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 163°C)
IFRM
20
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
200
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +175
°C
EAS
100
mJ
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
V
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
1.8
−
°C/W
Symbol
Typ
Max
Unit
0.6
0.735
−
0.82
0.515
0.588
−
0.63
1.0
3.75
−
30
mA
mA
2.0
3.1
−
20
mA
mA
ELECTRICAL CHARACTERISTICS
Rating
Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
VF
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
V
IR
(VR = 90 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NTS10120EMFS, NRVTS10120EMFS
TYPICAL CHARACTERISTICS
100
iF, INSTANTANEOUS FORWARD
CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 125°C
TA = 150°C
10
TA = 175°C
1
TA = 25°C
TA = −55°C
0.1
TA = 125°C
10
TA = 150°C
TA = 25°C
TA = −55°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
IR, INSTANTANEOUS REVERSE CURRENT (A)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E+00
1.E+00
1.E−01
TA = 175°C
TA = 150°C
1.E−02
TA = 175°C
TA = 150°C
TA = 125°C
1.E−01
1.E−02
TA = 125°C
1.E−03
1.E−03
1.E−04
1.E−04
TA = 25°C
1.E−05
1.E−05
TA = 25°C
1.E−06
1.E−06
1.E−07
1.E−07
0
10
20
30
40
50
60
70
90 100 110 120
80
10
20
30
40
50
60
70
80
90 100 110 120
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
TJ = 25°C
1000
100
10
0.1
0
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
IF(AV), AVERAGE FORWARD CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
C, JUNCTION CAPACITANCE (pF)
TA = 175°C
1
1
10
100
25
RqJC = 1.8°C/W
20
DC
15
Square Wave
10
5
0
110
120
130
140
150
160
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
170
NTS10120EMFS, NRVTS10120EMFS
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
TYPICAL CHARACTERISTICS
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
IPK/IAV = 20
IPK/IAV = 10
TJ = 175°C
IPK/IAV = 5
Square Wave
DC
0
2
4
6
8
10
14
12
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
50% Duty Cycle
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10
100
1000
PULSE TIME (sec)
Figure 8. Typical Thermal Characteristics
R(t) (°C/W)
10
1 50% Duty Cycle
20%
10%
0.1 5%
2%
0.01
1%
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
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4
NTS10120EMFS, NRVTS10120EMFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
0.10 C
SIDE VIEW
8X
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
4X
1.000
e/2
L
1
4
0.965
K
1.330
2X
0.905
2X
E2
PIN 5
(EXPOSED PAD)
G
SOLDERING FOOTPRINT*
DETAIL A
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
L1
M
0.495
4.530
3.200
0.475
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NTS10120EMFS/D
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