CYSTEKEC MTB080P06J3 P-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 1/ 9
P-Channel Enhancement Mode Power MOSFET
MTB080P06J3
BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-10A
RDS(ON)@VGS=-5V, ID=-8A
-60V
-12.5A
82.5mΩ(typ)
107mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free Lead Plating & Halogen-free Package
Equivalent Circuit
Outline
MTB080P06J3
TO-252(DPAK)
G:Gate
D:Drain
S:Source
G
D S
Ordering Information
Device
MTB080P06J3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB080P06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=-10V
Continuous Drain Current @TC=100°C, VGS=-10V
Continuous Drain Current @TA=25°C, VGS=-10V
Continuous Drain Current @TA=70°C, VGS=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=-11A, VDD=-50V
TC=25°C
TC=100°C
Total Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
Symbol
Limits
VDS
VGS
-60
±20
-12.5
-7.9
-3.5
-2.8
-45
-12.5
60
31
12
2.5
1.6
-55~+150
ID
(Note 2)
IDSM
(Note 2)
IDM
IAS
EAS
(Note 3)
(Note 3)
(Note 2)
(Note 1)
PD
(Note 1)
(Note 2)
PDSM
(Note 2)
Tj, Tstg
Unit
V
A
mJ
W
°C
* 100% UIS testing in condition of VD=-15V, L=1mH, VG=-10V, IAS=-9A, Rated VDS=-60V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient, t≤10s (Note 2)
Thermal Resistance, Junction-to-ambient, steady state
Symbol
RθJC
RθJA
Typical
3.6
15
40
Maximum
4
18
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
MTB080P06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 3/ 9
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
*1
Min.
Typ.
Max.
-60
-1.0
-
82.5
104
11.5
-2.5
±100
-1
-25
115
150
-
GFS *1
Dynamic
Qg *1, 2
11.5
17.5
Qgs *1, 2
2.4
Qgd *1, 2
2.9
td(ON) *1, 2
6.6
9.9
tr
17.4
26.1
*1, 2
td(OFF) *1, 2
26.2
39.3
tf *1, 2
7.6
11.4
Ciss
542
Coss
57
Crss
40
Rg
5.3
Source-Drain Diode Ratings and Characteristics
IS *1
-12.5
ISM *1
-45
VSD *1
-0.97
-1.2
trr
13
19.5
Qrr
9.5
-
Unit
Test Conditions
S
VGS=0V, ID=-250μA
VDS =VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS =-48V, VGS =0V
VDS =-48V, VGS =0V, TJ=85°C
VGS =-10V, ID=-10A
VGS =-5V, ID=-8A
VDS =-10V, ID=-10A
nC
ID=-10A, VDS=-48V, VGS=-10V
ns
VDS=-30V, ID=-10A, VGS=-10V,
RG=3Ω
pF
VGS=0V, VDS=-25V, f=1MHz
Ω
f=1MHz
V
nA
μA
mΩ
A
V
ns
nC
IS=-10A, VGS=0V
IF=-10A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTB080P06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
20
18
-BVDSS, Normalized Drain-Source
Breakdown Voltage
5V
10V,9V,8V,7V,6V
-I D, Drain Current(A)
16
4.5V
14
12
10
4V
8
6
3.5 V
4
1.2
1.0
0.8
0.6
ID=-250μA,
VGS=0V
-VGS=3V
2
0.4
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
-VSD, Source-Drain Voltage(V)
RDS(ON), Static Drain-Source On-State
Resistance(mΩ)
500
400
In descending order
VGS= -5V
-10V
300
200
100
Tj=25°C
VGS=0V
1.0
0.8
Tj=150°C
0.6
0.4
0.2
0
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
R DS(ON) , Normalized Static DrainSource On-State Resistance
1000
ID=-10A
800
600
400
200
0
0
MTB080P06J3
2
4
6
8
-VGS, Gate-Source Voltage(V)
2
4
6
8
-IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS=-10V, ID=-10A
RDS(ON) @Tj=25°C : 82.5mΩ typ.
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 5/ 9
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
Crss
f=1MHz
1.4
1.2
ID=-1mA
1.0
0.8
0.6
ID=-250μA
0.4
0.2
10
0
10
20
-VDS, Drain-Source Voltage(V)
-75 -50 -25
30
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
Maximum Safe Operating Area
10
100
RDS(ON)
Limited
10
-VGS, Gate-Source Voltage(V)
-I D, Drain Current (A)
100μs
1ms
10ms
100ms
1s
1
TC=25°C, Tj=150°C,
VGS=-10V, RθJC=4°C/W,
single pulse
DC
8
6
4
VDS=-48V
2
ID=-10A
0
0.1
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
0
1000
3
Maximum Drain Current vs Case Temperature
15
Typical Transfer Characteristics
20
16
VDS=-10V
18
14
16
12
-ID, Drain Current(A)
-I D, Maximum Drain Current(A)
6
9
12
Qg, Total Gate Charge(nC)
10
8
6
4
12
10
8
6
4
VGS=-10V, Tj(max)=150°C,
RθJC=4°C/W, single pulse
2
14
2
0
0
25
MTB080P06J3
50
75
100
125
TC , Case Temperature(°C)
150
175
0
1
2
3
4
5
6
7
8
9
10
-VGS, Gate-Source Voltage(V)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 6/ 9
Typical Characteristics (Cont.)
Forward Transfer Admittance vs Drain Current
Single Pulse Power Rating, Junction to Case
GFS , Forward Transfer Admittance(S)
100
3000
2500
TJ(MAX) =150°C
TC=25°C
RθJC=4°C/W
Power (W)
10
1
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
1500
1000
VDS=-10V
Pulsed
Ta=25°C
0.1
2000
500
10
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=4°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB080P06J3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTB080P06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 8/ 9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB080P06J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 9/ 9
TO-252 Dimension
Marking:
4
Device
Name
B080
P06
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB080P06J3
CYStek Product Specification
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