Vishay IRF630STRR Power mosfet Datasheet

IRF630S, SiHF630S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
200
RDS(on) ()
VGS = 10 V
0.40
Qg (Max.) (nC)
43
Qgs (nC)
7.0
Qgd (nC)
23
Configuration
Single
D
D2PAK (TO-263)
DESCRIPTION
K
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
G
D
S
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF630S-GE3
SiHF630STRL-GE3a
SiHF630STRR-GE3a
IRF630SPbF
IRF630STRLPbFa
IRF630STRRPbFa
SiHF630S-E3
SiHF630STL-E3a
SiHF630STR-E3a
Lead (Pb)-free
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
UNIT
V
9.0
5.7
A
36
Linear Derating Factor
0.59
Linear Derating Factor (PCB Mount)e
0.025
W/°C
Single Pulse Avalanche Energyb
EAS
250
mJ
Repetitive Avalanche Currenta
IAR
9.0
A
EAR
7.4
mJ
Repetitive Avalanche
Energya
Maximum Power Dissipation
TC = 25 °C
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
PD
74
3.0
W
* Pb containing terminations are not RoHS compliant, exemptions may apply
Peak Diode Recovery dV/dtc
Document Number: 91032
S11-1047-Rev. C, 30-May-11
dV/dt
5.0
V/ns
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
TJ, Tstg
- 55 to + 150
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
UNIT
°C
300d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12).
c. ISD  9.0 A, dI/dt  120 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
Maximum Junction-to-Ambient
(PCB Mount)c
RthJA
-
-
40
Maximum Junction-to-Ambient
RthJA
-
-
62
Maximum Junction-to-Case (Drain)
RthJC
-
-
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
VDS
TYP.
MAX.
UNIT
Static
VGS = 0, ID = 250 μA
200
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.24
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 200 V, VGS = 0 V
-
-
25
VDS = 160V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = 5.4 Ab
VGS = 10 V
VDS = 50 V, ID = 5.4 Ab
μA
-
-
0.40

3.8
-
-
S
-
800
-
-
240
-
-
76
-
-
-
43
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V
ID = 5.9 A, VDS = 160 V
see fig. 6 and 13b
VDD = 100 V, ID = 5.9 A
Rg = 12 , RD= 16 
see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
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VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
7.0
-
-
23
-
9.4
-
-
28
-
-
39
-
-
20
-
-
4.5
-
-
7.5
-
pF
nC
ns
nH
G
S
Document Number: 91032
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
-
9.0
UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
IS
Currenta
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
-
-
36
VSD
TJ = 25 °C, IS = 9.0 A, VGS = 0 Vb
-
-
2.0
V
Body Diode Reverse Recovery Time
trr
-
170
340
ns
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IF = 5.9 A,
dI/dt = 100 A/μsb
-
1.1
2.2
μC
Forward Turn-On Time
ton
Body Diode Voltage
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 or G-10 material).
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
101
100
4.5 V
91032_01
101
100
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Document Number: 91032
S11-1047-Rev. C, 30-May-11
10-1
10-1
101
VDS, Drain-to-Source Voltage (V)
4.5 V
100
20 µs Pulse Width
TC = 25 °C
10-1
10-1
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
ID, Drain Current (A)
ID, Drain Current (A)
Top
91032_02
20 µs Pulse Width
TC = 150 °C
100
101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
1600
Capacitance (pF)
ID, Drain Current (A)
101
150 °C
25 °C
100
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
1200
Ciss
800
Coss
400
Crss
20 µs Pulse Width
VDS = 50 V
10-1
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
91032_03
0
100
10
2.5
20
ID = 5.9 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
91032_04
ID = 5.9 A
VDS = 160 V
16
VDS = 100 V
VDS = 40 V
12
8
4
For test circuit
see figure 13
0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
VGS, Gate-to-Source Voltage (V)
RDS(on), Drain-to-Source On Resistance
(Normalized)
3.0
VDS, Drain-to-Source Voltage (V)
91032_05
Fig. 3 - Typical Transfer Characteristics
101
0
91032_06
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91032
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
ISD, Reverse Drain Current (A)
10
ID, Drain Current (A)
101
150 °C
25 °C
100
8
6
4
2
VGS = 0 V
0.5
0.7
0.9
VSD, Source-to-Drain Voltage (V)
91032_07
0
1.5
1.3
1.1
25
50
VGS
5
150
RD
D.U.T.
Rg
Operation in this area limited
by RDS(on)
125
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
103
100
TC, Case Temperature (°C)
91032_09
Fig. 7 - Typical Source-Drain Diode Forward Voltage
75
+
- VDD
ID, Drain Current (A)
2
10 V
102
5
10 µs
2
10
100 µs
Fig. 10a - Switching Time Test Circuit
5
1 ms
2
10 ms
1
5
VDS
TC = 25 °C
TJ = 150 °C
Single Pulse
2
0.1
0.1
91032_08
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
2
5
1
2
5
10
2
90 %
5
102
2
5
103
2
5
VDS, Drain-to-Source Voltage (V)
104
10 %
VGS
td(on)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91032
S11-1047-Rev. C, 30-May-11
tr
td(off) tf
Fig. 10b - Switching Time Waveforms
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
Thermal Response (ZthJC)
10
1
0 − 0.5
0.2
PDM
0.1
0.05
0.1
t1
0.02
0.01
t2
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
91032_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
Rg
D.U.T.
+
-
IAS
V DD
VDS
10 V
tp
0.01 Ω
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
600
ID
4.0 A
5.7 A
Bottom 9.0 A
Top
500
400
300
200
100
0
VDD = 50 V
25
91032_12c
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
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Document Number: 91032
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF630S, SiHF630S
Vishay Siliconix
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
0.2 µF
12 V
0.3 µF
QGS
+
QGD
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 13a - Basic Gate Charge Waveform
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
+
-
-
Rg
•
•
•
•
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91032.
Document Number: 91032
S11-1047-Rev. C, 30-May-11
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Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
(Datum A)
3
A
4
4
L1
B
A
E
c2
H
Gauge
plane
4
0° to 8°
5
D
B
Detail A
Seating plane
H
1
2
C
3
C
L
L3
L4
Detail “A”
Rotated 90° CW
scale 8:1
L2
B
A1
B
A
2 x b2
c
2xb
E
0.010 M A M B
± 0.004 M B
2xe
Plating
5
b1, b3
Base
metal
c1
(c)
D1
4
5
(b, b2)
Lead tip
MILLIMETERS
DIM.
MIN.
MAX.
View A - A
INCHES
MIN.
4
E1
Section B - B and C - C
Scale: none
MILLIMETERS
MAX.
DIM.
MIN.
INCHES
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D1
6.86
-
0.270
-
A1
0.00
0.25
0.000
0.010
E
9.65
10.67
0.380
0.420
6.22
-
0.245
-
b
0.51
0.99
0.020
0.039
E1
b1
0.51
0.89
0.020
0.035
e
b2
1.14
1.78
0.045
0.070
H
14.61
15.88
0.575
0.625
b3
1.14
1.73
0.045
0.068
L
1.78
2.79
0.070
0.110
2.54 BSC
0.100 BSC
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.066
c1
0.38
0.58
0.015
0.023
L2
-
1.78
-
0.070
c2
1.14
1.65
0.045
0.065
L3
D
8.38
9.65
0.330
0.380
L4
0.25 BSC
4.78
5.28
0.010 BSC
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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