Renesas NP80N04PLG-E2B-AYNote Switching n-channel power mos fet Datasheet

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
8.
9.
10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”:
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04MLG, NP80N04NLG, NP80N04PLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for
high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N04MLG-S18-AY
NP80N04NLG-S18-AY
NP80N04PLG-E1B-AY
NP80N04PLG-E2B-AY
LEAD PLATING
PACKING
PACKAGE
Tube
TO-220 (MP-25K) typ. 1.9 g
Note
Note
Note
50 p/tube
Pure Sn (Tin)
Note
Tape
1000 p/reel
TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
(TO-220)
• Logic level
• Built-in gate protection diode
• Super low on-state resistance
- NP80N04MLG, NP80N04NLG
RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
(TO-262)
- NP80N04PLG
RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• High current rating
ID(DC) = ±80 A
• Low input capacitance
(TO-263)
Ciss = 4600 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19797EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
NP80N04MLG, NP80N04NLG, NP80N04PLG
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±80
A
ID(pulse)
±300
A
Total Power Dissipation (TC = 25°C)
PT1
115
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Drain Current (pulse)
Note1
Tstg
−55 to +175
°C
Repetitive Avalanche Current
Note2
IAR
37
A
Repetitive Avalanche Energy
Note2
EAR
137
mJ
Storage Temperature
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.30
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
2
Data Sheet D19797EJ1V0DS
NP80N04MLG, NP80N04NLG, NP80N04PLG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
Zero Gate Voltage Drain Current
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
IDSS
VDS = 40 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
μA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.4
| yfs |
VDS = 5 V, ID = 35 A
25
RDS(on)1
VGS = 10 V, ID = 40 A
NP80N04MLG, NP80N04NLG
3.8
4.8
mΩ
VGS = 10 V, ID = 40 A
3.3
4.5
mΩ
VGS = 4.5 V, ID = 35 A
NP80N04MLG, NP80N04NLG
4.9
9.0
mΩ
VGS = 4.5 V, ID = 35 A
NP80N04PLG
4.6
8.7
mΩ
4600
6900
pF
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
2.5
V
64
S
NP80N04PLG
RDS(on)2
Input Capacitance
Ciss
VDS = 25 V,
Output Capacitance
Coss
VGS = 0 V,
480
720
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
310
560
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 40 A,
17
37
ns
Rise Time
tr
VGS = 10 V,
18
45
ns
Turn-off Delay Time
td(off)
RG = 0 Ω
74
148
ns
Fall Time
tf
8
20
ns
Total Gate Charge
QG
VDD = 32 V,
90
135
nC
Gate to Source Charge
QGS
VGS = 10 V,
13
Gate to Drain Charge
QGD
ID = 80 A
VF(S-D)
IF = 80 A, VGS = 0 V
0.95
Reverse Recovery Time
trr
IF = 80 A, VGS = 0 V,
39
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
39
nC
Body Diode Forward Voltage
Note
nC
26
nC
1.5
V
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
VDS
ID
VDS
0
10%
10%
tr
td(off)
Wave Form
τ
VDD
Starting Tch
90%
VDS
VGS
0
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
ton
tf
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
50 Ω
RL
VDD
Data Sheet D19797EJ1V0DS
3
NP80N04MLG, NP80N04NLG, NP80N04PLG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
125
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
100
0
75
50
25
0
0
25
50
75
100
125
150
175
0
TC - Case Temperature - °C
25
50
75
100
125
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
R
D
o
S(
(V
G
S
ID(pulse)
d
it e
Li m V )
0
i
=1
PW
ID(DC)
=
1i 0
0
μs
i
1i m
DC
s
wn
i
Lim
d
it e
im
nL
do
ake
io
at
t ed
0.1
i
Br
ip
i ss
1
ms
D
er
10
1i 0
ar y
nd
co
Se
w
Po
ID - Drain Current - A
1000
n)
TC = 25°C
Single Pulse
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-A) = 83.3°C/W
100
10
Rth(ch-C) = 1.30°C/W
1
0.1
Single Pulse
0.01
1m
10 m
100 m
1
10
PW - Pulse Width - s
4
150
Data Sheet D19797EJ1V0DS
100
1000
175
NP80N04MLG, NP80N04NLG, NP80N04PLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
300
250
10 V
ID - Drain Current - A
ID - Drain Current - A
250
200
150
VGS = 4.5 V
100
50
10 V
200
150
VGS = 4.5 V
100
50
Pulsed
NP80N04MLG, NP80N04NLG
0
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
100
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
10
1
0.1
0.01
VDS = 10 V
Pulsed
0.001
0.0001
0
1
2
3
4
VGS(th) - Gate to Source Threshold Voltage - V
VDS - Drain to Source Voltage - V
1000
ID - Drain Current - A
Pulsed
NP80N04PLG
3
2
1
VDS = VGS
ID = 250 μA
0
-75
-25
25
75
125
175
225
Tch - Channel Temperature - °C
VGS - Gate to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
VDS = 5 V
Pulsed
1
0.1
1
10
100
ID - Drain Current - A
Data Sheet D19797EJ1V0DS
5
NP80N04MLG, NP80N04NLG, NP80N04PLG
8
6
VGS = 4.5 V
4
10 V
2
Pulsed
NP80N04MLG, NP80N04NLG
0
1
10
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
6
VGS = 4.5 V
4
10 V
2
1
10
100
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
ID = 40 A
Pulsed
8
6
4
2
NP80N04MLG, NP80N04NLG
0
0
4
8
12
16
20
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
10
ID = 40 A
Pulsed
8
6
4
2
NP80N04PLG
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
VGS = 4.5 V, ID = 35 A
6
10 V, 40 A
4
2
Pulsed
NP80N04MLG, NP80N04NLG
0
-75
-25
25
75
125
175
225
Tch - Channel Temperature - °C
6
Pulsed
NP80N04PLG
0
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
8
VGS = 4.5 V, ID = 35 A
6
10 V, 40 A
4
2
Pulsed
NP80N04PLG
0
-75
-25
25
75
125
175
Tch - Channel Temperature - °C
Data Sheet D19797EJ1V0DS
225
NP80N04MLG, NP80N04NLG, NP80N04PLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1000
10000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
100000
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
0.01
0.1
1
10
td(off)
100
td(on)
10
tr
1
0.1
100
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
10
100
ID - Drain Current - A
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDD = 32 V
20 V
8V
40
8
30
6
20
4
VGS
10
2
VDS
ID = 80 A
0
0
20
40
60
1000
IF - Diode Forward Current - A
10
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
50
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0
100
80
QG - Gate Charge - nC
10 V
100
4.5 V
VGS = 0 V
10
1
0.1
Pulsed
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
trr - Reverse Recovery Time - ns
100
di/dt = 100 A/μs
VGS = 0 V
10
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D19797EJ1V0DS
7
NP80N04MLG, NP80N04NLG, NP80N04PLG
PACKAGE DRAWINGS (Unit: mm)
3
0.8±0.1
0.5±0.2
2.54 TYP.
2.5±0.2
2.54 TYP.
2
3
10.1±0.3
15.9 MAX.
1.27±0.2
1
4.45±0.2
1.3±0.2
13.7±0.3
2
13.7±0.3
1
10.0±0.2
4
3.1±0.2
6.3±0.3
2.8±0.3
4
4.45±0.2
1.3±0.2
0.8±0.1
2.54 TYP.
2.54 TYP.
1.27±0.2
0.5±0.2
EQUIVALENT CIRCUIT
10.0 ±0.3
7.88 MIN.
1.35 ±0.3
TO-263 (MP-25ZP)
Drain
4.45 ±0.2
1.3 ±0.2
4
15.25 ±0.5
0.5
Body
Diode
Gate
9.15 ±0.3
8.0 TYP.
2.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
No plating
3.1±0.3
φ 3.8±0.2
10.0±0.2
1.2±0.3
TO-262 (MP-25SK)
8.9±0.2
TO-220 (MP-25K)
0.025
to 0.25
Gate
Protection
Diode
Source
.2
0 to 8
˚
0.25
1 2
3
2.5
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.54 ±0.25
0.6 ±0
0.75 ±0.2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
8
Data Sheet D19797EJ1V0DS
NP80N04MLG, NP80N04NLG, NP80N04PLG
TAPE INFORMATION (NP80N04PLG)
There are two types (-E1B, -E2B) of taping depending on the direction of the device.
Draw-out side
Reel side
−E1B TYPE
−E2B TYPE
MARKING INFORMATION
NEC
80N04
LG
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Infrared reflow
Maximum temperature (Package's surface temperature): 260°C or below
NP80N04PLG
Time at maximum temperature: 10 seconds or less
Recommended
Condition Symbol
IR60-00-3
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Wave soldering
Maximum temperature (Solder temperature): 260°C or below
NP80N04MLG,
Time: 10 seconds or less
NP80N04NLG
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
NP80N04MLG,
Time (per side of the device): 3 seconds or less
NP80N04NLG,
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
THDWS
P350
NP80N04PLG
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19797EJ1V0DS
9
NP80N04MLG, NP80N04NLG, NP80N04PLG
• The information in this document is current as of May, 2009. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets,
etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or
types are available in every country. Please check with an NEC Electronics sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in
order to avoid risks of the damages to property (including public or social property) or injury (including death) to
persons, as the result of defects of NEC Electronics products.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E0904E
Similar pages