TI1 LMP2012QML Dual high precision, rail-to-rail output operational amplifier Datasheet

LMP2012QML
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LMP2012QML Dual High Precision, Rail-to-Rail Output Operational Amplifier
FEATURES
DESCRIPTION
•
•
•
The LMP2012 offers unprecedented accuracy and
stability. This device utilizes patented techniques to
measure and continually correct the input offset error
voltage. The result is an amplifier which is ultra stable
over time and temperature. It has excellent CMRR
and PSRR ratings, and does not exhibit the familiar
1/f voltage and current noise increase that plagues
traditional amplifiers. The combination of the
LMP2012 characteristics makes it a good choice for
transducer amplifiers, high gain configurations, ADC
buffer amplifiers, DAC I-V conversion, and any other
2.7V-5V application requiring precision and long term
stability.
1
2
•
•
•
•
•
•
•
•
•
Total Ionizing Dose 50 krad(Si)
ELDRS Free 50 krad(Si)
TCVIO Temperature Sensitivity (Typical) 0.015
µV/°C
(For VS = 5V, Typical Unless Otherwise Noted)
Low Ensured VIO over Temperature 60 µV
Low Noise with no 1/f 35nV/√Hz
High CMRR 90 dB
High PSRR 90 dB
High AVOL 85 dB
Wide Gain-Bandwidth Product 3MHz
High Slew Rate 4V/µs
Rail-to-Rail Output 30mV
No External Capacitors Required
The QMLV version of the LMP2012 has been rated to
tolerate a total dose level of 50krad/(Si) radiation by
test method 1019 of MIL-STD-883.
APPLICATIONS
•
•
•
•
•
•
•
Other useful benefits of the LMP2012 are rail-rail
output, low supply current of 930 μA, and wide gainbandwidth product of 3 MHz. These extremely
versatile features found in the LMP2012 provide high
performance and ease of use.
Attitude and Orbital Controls
Static Earth Sensing
Sun Sensors
Inertial Sensors
Pressure Sensors
Gyroscopes
Earth Observation Systems
Connection Diagram
OUT A
1
10
V+
-
IN A
2
9
OUT B
IN A+
3
8
IN B-
V-
4
7
IN B+
N/C
5
6
N/C
Figure 1. 10-Lead CLGA (Top View)
See NAC Package
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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Absolute Maximum Ratings (1)
Supply Voltage
5.8V
Differential Input Voltage
±Supply Voltage
Power Dissipation (2)
714mW
Maximum Junction Temperature (TJmax)
150°C
-0.3 ≤ VCM ≤ VCC +0.3V
Common-Mode Input Voltage
Current at Input Pin
30 mA
Current at Output Pin
30 mA
Current at Power Supply Pin
50 mA
Operating Temperature Range
-55°C to +125°C
Storage Temperature Range
-55°C to +150°C
CLGA Lead Temperature (soldering 10 sec.)
θJA
Thermal Resistance
θJC
Package Weight
+260°C
CLGA (Still Air)
175°C/W
CLGA (500LF/Min Air Flow)
115°C/W
CLGA
12.3°C/W
CLGA
220mg
ESD Tolerance (3)
(1)
(2)
(3)
4000V
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
Human body model, 1.5 kΩ in series with 100 pF.
Quality Conformance Inspection
Table 1. Mil-Std-883, Method 5005 - Group A
2
Subgroup
Description
Temp (°C)
1
Static tests at
+25
2
Static tests at
+125
3
Static tests at
-55
4
Dynamic tests at
+25
5
Dynamic tests at
+125
6
Dynamic tests at
-55
7
Functional tests at
+25
8A
Functional tests at
+125
8B
Functional tests at
-55
9
Switching tests at
+25
10
Switching tests at
+125
11
Switching tests at
-55
12
Setting time at
+25
13
Setting time at
+125
14
Setting time at
-55
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LMP2012 Electrical Characteristics 2.7V DC Parameters
The following conditions apply, unless otherwise specified.
V+ = 2.7V, V-= 0V, V CM = 1.35V, VO = 1.35V and RL > 1 MΩ.
Symbol
VIO
Parameter
Conditions
Notes
IIB
Input Bias Current
IIO
Input Offset Current
CMRR
Common Mode Rejection Ratio
Max
36
60
0.5
Offset Calibration Time
Input Offset Voltage
(Temperature Sensitivity)
Min
0.8
Input Offset Voltage
TCVIO
Typ (1)
10
12
−3
pA
0 ≤ VCM ≤ 0.9V
Power Supply Rejection Ratio
120
AVOL
Open Loop Voltage Gain
130
dB
95
dB
90
RL = 2 kΩ
VO
Output Swing
124
2.68
RL = 10 kΩ to 1.35V
VIN(diff) = ±0.5V
IS
(1)
Output Current
dB
90
2, 3
2.64
1
0.060
V
18
Supply Current per Channel
1
1
0.085
V
2, 3
1
2, 3
5
1
3
2, 3
mA
5
3
0.919
2, 3
2,3
2.615
2.6
Sinking, VO = 5V
VIN(diff) = ±0.5V
1
85
0.061
12
2, 3
1
2.63
Sourcing, VO = 0V
VIN(diff) = ±0.5V
1
2, 3
0.105
IO
1
2, 3
90
0.075
RL = 2 kΩ to 1.35V
VIN(diff) = ±0.5V
1
2, 3
95
0.033
2.65
1
2, 3
pA
95
90
PSRR
RL = 10 kΩ
ms
µV/°C
130
Subgroups
μV
0.015
6
−0.3 ≤ VCM ≤ 0.9V
Units
1
2, 3
1.20
1.50
mA
1
2, 3
Typical values represent the most likely parametric norm.
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LMP2012 Electrical Characteristics 2.7V AC Parameters
The following conditions apply, unless otherwise specified.
V+ = 2.7V, V -= 0V, VCM = 1.35V, VO = 1.35V, and RL > 1 MΩ.
Symbol
Parameter
Conditions
Notes
Typ (1)
Min
Max
Units
Subgroups
1
5
MHz
4
GBW
Gain-Bandwidth Product
3
SR
Slew Rate
4
V/μs
θm
Phase Margin
60
Deg
Gm
Gain Margin
−14
dB
en
Input-Referred Voltage Noise
enP-P
Input-Referred Voltage Noise
trec
Input Overload Recovery Time
(1)
RS = 100Ω, DC to 10 Hz
35
nV/√Hz
850
nVPP
50
ms
Typical values represent the most likely parametric norm.
LMP2012 Electrical Characteristics 2.7V DC Parameters – 50 krad(Si) Post Radiation Limits @
+25°C (1)
The following conditions apply, unless otherwise specified.
V+ = 2.7V, V -= 0V, VCM = 1.35V, VO = 1.35V, and RL > 1 MΩ.
Symbol
IS
(1)
Parameter
Conditions
Notes
Supply Current per Channel
Typ
Min
Max
Units
Subgroups
1.75
mA
1
Pre and post irradiation limits are identical to those listed under DC Parameters, except those listed in the Post Radiation Limit tables.
LMP2012 Electrical Characteristics 2.7V Operating Life Test Delta Parameters TA = +25°C
This is worst case drift, deltas are performed at room temperature post operation life. All other parameters, no deltas required.
Symbol
VIO
4
Parameter
Input offset voltage
Conditions
2.7 V
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Limit
Units
±2
μV
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LMP2012 Electrical Characteristics 5V DC Parameters
The following conditions apply, unless otherwise specified.
V+ = 5V, V-= 0V, V CM = 2.5V, VO = 2.5V and RL > 1MΩ.
Symbol
VIO
Parameter
Conditions
Notes
Input Offset Voltage
Typ (1)
Min
0.12
Max
36
60
Offset Calibration Time
0.5
10
12
TCVIO
Input Offset Voltage
(Temperature Sensitivity)
IIB
Input Bias Current
IIO
Input Offset Current
CMRR
Common Mode Rejection Ratio
−3
pA
0 ≤ VCM ≤ 3.2
PSRR
Power Supply Rejection Ratio
AVOL
Open Loop Voltage Gain
RL = 2 kΩ
VO
Output Swing
RL = 10 kΩ to 2.5V
VIN(diff) = ±0.5V
dB
90
130
105
1
100
2, 3
132
dB
4.978
dB
95
1
0.080
V
IS
Sourcing, VO = 5V
VIN(diff) = ±0.5V
17
Supply Current per Channel
4.875
0.125
V
2, 3
1
2, 3
8
1
6
2, 3
mA
8
1
2, 3
1.20
1.50
(1)
1
1
6
0.930
2, 3
2, 3
0.150
15
1
4.92
4.855
Sourcing, VO = 0V
VIN(diff) = ±0.5V
2, 3
2, 3
4.91
4.919
1
90
0.091
Output Current
1
2, 3
95
0.095
IO
1
2, 3
120
0.040
RL = 2 kΩ to 2.5V
VIN(diff) = ±0.5V
1
2, 3
pA
100
90
RL = 10 kΩ
ms
µV/°C
130
Subgroups
μV
0.015
6
−0.3 ≤ VCM ≤ 3.2
Units
mA
1
2, 3
Typical values represent the most likely parametric norm.
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LMP2012 Electrical Characteristics 5V AC Parameters
The following conditions apply, unless otherwise specified.
V+ = 5V, V -= 0V, VCM = 2.5V, VO = 2.5V, and RL > 1 MΩ.
Symbol
Parameter
Conditions
Notes
Typ (1)
Min
Max
Units
Subgroups
1
5
MHz
4
GBW
Gain-Bandwidth Product
3
SR
Slew Rate
4
V/μs
θm
Phase Margin
60
Deg
Gm
Gain Margin
−15
dB
en
Input-Referred Voltage Noise
enP-P
Input-Referred Voltage Noise
trec
Input Overload Recovery Time
(1)
RS = 100Ω, DC to 10 Hz
35
nV/√Hz
850
nVPP
50
ms
Typical values represent the most likely parametric norm.
LMP2012 Electrical Characteristics 5V DC Parameters – 50 krad(Si) Post Radiation Limits @
+25°C (1)
The following conditions apply, unless otherwise specified.
V+ = 5V, V -= 0V, VCM = 2.5V, VO = 2.5V, and RL > 1 MΩ.
Symbol
IS
(1)
Parameter
Conditions
Notes
Typ
Supply Current per Channel
Min
Max
Units
Subgroups
1.75
mA
1
Pre and post irradiation limits are identical to those listed under DC Parameters, except those listed in the Post Radiation Limit tables.
LMP2012 Electrical Characteristics 5V Operating Life Test Delta Parameters TA = +25°C
This is worst case drift, deltas are performed at room temperature post operation life. All other parameters, no deltas required.
Symbol
VIO
6
Parameter
Input offset voltage
Conditions
5.0 V
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Limit
Units
±2
μV
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APPLICATION INFORMATION
THE BENEFITS OF LMP2012 NO 1/f NOISE
Using patented methods, the LMP2012 eliminates the 1/f noise present in other amplifiers. That noise, which
increases as frequency decreases, is a major source of measurement error in all DC-coupled measurements.
Low-frequency noise appears as a constantly-changing signal in series with any measurement being made. As a
result, even when the measurement is made rapidly, this constantly-changing noise signal will corrupt the result.
The value of this noise signal can be surprisingly large. For example: If a conventional amplifier has a flat-band
noise level of 10nV/√Hz and a noise corner of 10 Hz, the RMS noise at 0.001 Hz is 1µV/√Hz. This is equivalent
to a 0.50 µV peak-to-peak error, in the frequency range 0.001 Hz to 1.0 Hz. In a circuit with a gain of 1000, this
produces a 0.50 mV peak-to-peak output error. This number of 0.001 Hz might appear unreasonably low, but
when a data acquisition system is operating for 17 minutes, it has been on long enough to include this error. In
this same time, the LMP2012 will only have a 0.21 mV output error. This is smaller by 2.4 x. Keep in mind that
this 1/f error gets even larger at lower frequencies. At the extreme, many people try to reduce this error by
integrating or taking several samples of the same signal. This is also doomed to failure because the 1/f nature of
this noise means that taking longer samples just moves the measurement into lower frequencies where the noise
level is even higher.
The LMP2012 eliminates this source of error. The noise level is constant with frequency so that reducing the
bandwidth reduces the errors caused by noise.
OVERLOAD RECOVERY
The LMP2012 recovers from input overload much faster than most chopper-stabilized op amps. Recovery from
driving the amplifier to 2X the full scale output, only requires about 40 ms. Many chopper-stabilized amplifiers will
take from 250 ms to several seconds to recover from this same overload. This is because large capacitors are
used to store the unadjusted offset voltage.
Figure 2.
The wide bandwidth of the LMP2012 enhances performance when it is used as an amplifier to drive loads that
inject transients back into the output. ADCs (Analog-to-Digital Converters) and multiplexers are examples of this
type of load. To simulate this type of load, a pulse generator producing a 1V peak square wave was connected
to the output through a 10 pF capacitor. See Figure 2. The typical time for the output to recover to 1% of the
applied pulse is 80 ns. To recover to 0.1% requires 860ns. This rapid recovery is due to the wide bandwidth of
the output stage and large total GBW.
NO EXTERNAL CAPACITORS REQUIRED
The LMP2012 does not need external capacitors. This eliminates the problems caused by capacitor leakage and
dielectric absorption, which can cause delays of several seconds from turn-on until the amplifier's error has
settled.
MORE BENEFITS
The LMP2012 offers the benefits mentioned above and more. It has a rail-to-rail output and consumes only 950
µA of supply current while providing excellent DC and AC electrical performance. In DC performance, the
LMP2012 achieves 130 dB of CMRR, 120 dB of PSRR and 130 dB of open loop gain. In AC performance, the
LMP2012 provides 3 MHz of gain-bandwidth product and 4 V/µs of slew rate.
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HOW THE LMP2012 WORKS
The LMP2012 uses new, patented techniques to achieve the high DC accuracy traditionally associated with
chopper-stabilized amplifiers without the major drawbacks produced by chopping. The LMP2012 continuously
monitors the input offset and corrects this error. The conventional chopping process produces many mixing
products, both sums and differences, between the chopping frequency and the incoming signal frequency. This
mixing causes large amounts of distortion, particularly when the signal frequency approaches the chopping
frequency. Even without an incoming signal, the chopper harmonics mix with each other to produce even more
trash. If this sounds unlikely or difficult to understand, look at the plot in Figure 3, of the output of a typical
(MAX432) chopper-stabilized op amp. This is the output when there is no incoming signal, just the amplifier in a
gain of -10 with the input grounded. The chopper is operating at about 150 Hz; the rest is mixing products. Add
an input signal and the noise gets much worse. Compare this plot with Figure 4 of the LMP2012. This data was
taken under the exact same conditions. The auto-zero action is visible at about 30 kHz but note the absence of
mixing products at other frequencies. As a result, the LMP2012 has very low distortion of 0.02% and very low
mixing products.
Figure 3.
10000
VOLTAGE NOISE (nV/ Hz)
VS = 5V
1000
100
10
0.1
1
10
100
1k
10k 100k
1M
FREQUENCY (Hz)
Figure 4.
INPUT CURRENTS
The LMP2012's input currents are different than standard bipolar or CMOS input currents in that it appears as a
current flowing in one input and out the other. Under most operating conditions, these currents are in the
picoamp level and will have little or no effect in most circuits. These currents tend to increase slightly when the
common-mode voltage is near the minus supply. At high temperatures, the input currents become larger, 0.5 nA
typical, and are both positive except when the VCM is near V−. If operation is expected at low common-mode
voltages and high temperature, do not add resistance in series with the inputs to balance the impedances. Doing
this can cause an increase in offset voltage. A small resistance such as 1 kΩ can provide some protection
against very large transients or overloads, and will not increase the offset significantly.
8
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PRECISION STRAIN-GAUGE AMPLIFIER
This Strain-Gauge amplifier (Figure 5) provides high gain (1006 or ~60 dB) with very low offset and drift. Using
the resistors' tolerances as shown, the worst case CMRR will be greater than 108 dB. The CMRR is directly
related to the resistor mismatch. The rejection of common-mode error, at the output, is independent of the
differential gain, which is set by R3. The CMRR is further improved, if the resistor ratio matching is improved, by
specifying tighter-tolerance resistors, or by trimming.
5V
+
VOUT
+
R1
R2
R2
R1
10k, 0.1%
2k, 1%
2k, 1%
10k, 0.1%
R3
20:
Figure 5.
Extending Supply Voltages and Output Swing by Using a Composite Amplifier Configuration:
In cases where substantially higher output swing is required with higher supply voltages, arrangements like the
ones shown in Figure 6 and Figure 7 could be used. These configurations utilize the excellent DC performance
of the LMP2012 while at the same time allow the superior voltage and frequency capabilities of the LM6171 to
set the dynamic performance of the overall amplifier. For example, it is possible to achieve ±12V output swing
with 300 MHz of overall GBW (AV = 100) while keeping the worst case output shift due to VOS less than 4 mV.
The LMP2012 output voltage is kept at about mid-point of its overall supply voltage, and its input common mode
voltage range allows the V- terminal to be grounded in one case (Figure 6, inverting operation) and tied to a
small non-critical negative bias in another (Figure 7, non-inverting operation). Higher closed-loop gains are also
possible with a corresponding reduction in realizable bandwidth. Table 2 shows some other closed loop gain
possibilities along with the measured performance in each case.
C2
R2
R7, 3.9k
C4
0.01
PF
R1
Input
2
-
+15V
1N4733A
(5.1V)
D1
7
3
LMP201X
3 U1
+
4
7
+
LM6171
2 U2
4
6
6
Output
-15V
(+2.5V)
+15V
R3
20k
R4
3.9k
R5, 1M
C3
0.01 PF
Figure 6.
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Table 2. Composite Amplifier Measured Performance
AV
R1
Ω
R2
Ω
C2
pF
BW
MHz
SR
(V/μs)
en p-p
(mVPP)
50
200
10k
8
3.3
178
37
100
100
10k
10
2.5
174
70
100
1k
100k
0.67
3.1
170
70
500
200
100k
1.75
1.4
96
250
1000
100
100k
2.2
0.98
64
400
In terms of the measured output peak-to-peak noise, the following relationship holds between output noise
voltage, en p-p, for different closed-loop gain, AV, settings, where −3 dB Bandwidth is BW:
C2
R2
R7, 3.9k
C4
0.01
PF
R1
+15V
1N4731A
(4.3V)
D1
2
7
LMP201X
3 U1
+
4
Input
3
6
-15V
R6
(-0.7V)
10k
+15V R3
C5
0.01 PF
7
+
LM6171
2 U2
4
Output
6
(+2.5V)
20k
D2
R4
1N4148 3.9k
R5, 1M
C3
0.01 PF
Figure 7.
It should be kept in mind that in order to minimize the output noise voltage for a given closed-loop gain setting,
one could minimize the overall bandwidth. As can be seen from Equation 1 above, the output noise has a
square-root relationship to the Bandwidth.
In the case of the inverting configuration, it is also possible to increase the input impedance of the overall
amplifier, by raising the value of R1, without having to increase the feed-back resistor, R2, to impractical values,
by utilizing a "Tee" network as feedback. See the LMC6442 data sheet (Application Notes section) for more
details on this.
+5V
+5V
-
VIN
+VREF
+Input
LMP201X
+
430:
(0V to 5V Range)
ADC1203X
-Input
-VREF
+2.5V
LM9140-2.5
GND
1M
Figure 8.
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LMP2012 AS ADC INPUT AMPLIFIER
The LMP2012 is a great choice for an amplifier stage immediately before the input of an ADC (Analog-to-Digital
Converter), whether AC or DC coupled. See Figure 8 and Figure 9. This is because of the following important
characteristics:
A)
Very low offset voltage and offset voltage drift over time and temperature allow a high closed-loop gain
setting without introducing any short-term or long-term errors. For example, when set to a closed-loop gain
of 100 as the analog input amplifier for a 12-bit A/D converter, the overall conversion error over full
operation temperature and 30 years life of the part (operating at 50°C) would be less than 5 LSBs.
B)
Fast large-signal settling time to 0.01% of final value (1.4 μs) allows 12 bit accuracy at 100 KHZ or more
sampling rate.
C)
No flicker (1/f) noise means unsurpassed data accuracy over any measurement period of time, no matter
how long. Consider the following op amp performance, based on a typical low-noise, high-performance
commercially-available device, for comparison:
Op amp flatband noise = 8nV/√Hz
1/f corner frequency = 100 Hz
AV = 2000
Measurement time = 100 sec
Bandwidth = 2 Hz
This example will result in about 2.2 mVPP (1.9 LSB) of output noise contribution due to the op amp alone,
compared to about 594 μVPP (less than 0.5 LSB) when that op amp is replaced with the LMP2012 which
has no 1/f contribution. If the measurement time is increased from 100 seconds to 1 hour, the
improvement realized by using the LMP2012 would be a factor of about 4.8 times (2.86 mVPP compared to
596 μV when LMP2012 is used) mainly because the LMP2012 accuracy is not compromised by increasing
the observation time.
D)
Rail-to-Rail output swing maximizes the ADC dynamic range in 5-Volt single-supply converter applications.
Below are some typical block diagrams showing the LMP2012 used as an ADC amplifier (Figure 8 and
Figure 9).
Figure 9.
RADIATION ENVIRONMENTS
Careful consideration should be given to environmental conditions when using a product in a radiation
environment.
TOTAL IONIZING DOSE
Radiation hardness assured (RHA) products are those part numbers with a total ionizing
specified in the Ordering Information table on the front page. Testing and qualification of these
on a wafer level according to MIL-STD-883G, Test Method 1019.7, Condition A and the
temperature anneal test” described in section 3.11 for application environment dose rates
rad(Si)/s. Wafer level TID data are available with lot shipments.
dose (TID) level
products is done
“Extended room
less than 0.082
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ELDRS-FREE PRODUCTS
ELDRS-Free products are tested and qualified on a wafer level basis at a dose rate of 10 mrad(Si)/s per MILSTD-883G, Test Method 1019.7, Condition D. Wafer level low dose rate test data are available with lot
shipments.
SINGLE EVENT UPSET
A report on single event upset (SEU) is available upon request.
Revision History
Date Released
Revision
Section
03/19/07
A
Initial Release
10/17/08
B
Electrical Section
07/13/09
C
2.7V DC and 5V DC Electrical Section
Added typical parameter TCVOS to 2.7V DC and 5V
DC Electrical Section. Revision B will be Archived.
12/08/09
D
Features, Ordering Information and Notes
Reference to ELDRS, New ELDRS part number and
added ELDRS Note 6. Revision C will be Archived.
06/08/2010
E
General Description, 2.7V DC and 5V DC
Electrical Section added New Radiation
Section.
Removed first line. Added Delta Table to Electrical's
to match what is in the SMD and New Radiation
Section. Revision D will be Archived.
11/30/2010
F
AC Electrical 5V parameter table conditions
04/02/2013
H
All
12
Changes
Initial Release
Added typical parameters to 2.7V and 5V AC
Electrical Sections. Revision A will be Archived.
Correct typo to unless otherwise specified parameters
From: V+ = 2.7V, V -= 0V, VCM = 1.35V, VO = 1.35V,
and RL > 1 MΩ. To: V+ = 5V, V -= 0V, VCM = 2.5V, VO
= 2.5V, and RL > 1 MΩ. Revision E will be Archived.
Changed layout of National Data Sheet to TI format
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