Datasheet µPD166029T1J INTELLIGENT POWER DEVICE R07DS1163EJ0200 Rev.2.00 May 22, 2015 1. Overview 1.1 Description Family: µPD166029T1J is part of 2nd Generation Intelligent Power Devices (IPD). They are N-channel high-side switches with charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number combination. Scalability: Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design depending on target load. Robustness: Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against long term and repetitive short circuit condition. 1.2 Features • • • • • • • • • Built-in charge pump 3.3V compatible logic interface Low standby current Short circuit protection Shutdown by over current detection Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control) Absolute Tch over temperature protection Built-in diagnostic function Proportional load current sensing Defined fault signal in case of abnormal load condition Loss of ground protection Under voltage lock out Active clamp operation at inductive load switch off AEC Qualified RoHS compliant 1.3 Application • Light bulb switching from 5W to 10W • Switching of all types of 14V DC grounded loads, such as LED, inductor, resistor and capacitor • Power supply switch, fail-safe switch of 14V DC grounded system Note: The information contained in this document is the one that was obtained when the document was issued, and may be subject to change. R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 1 of 40 µPD166029T1J Datasheet 2. Ordering Information 2. Ordering Information Part No. UPD166029T1J-E1-AY UPD166029T1J-E2-AY Note: Nick name NHD070B NHD070B Lead plating Pure Matte Sn Pure Matte Sn Packing Tape 1500 p/reel Tape 1500 p/reel Package 12-pin Power HSSOP 12-pin Power HSSOP Part No. and Nick name are tentative and might change at anytime without notice. MSL: 1, profile acc. J-STD-20C 2.1 Nick name N H D 070 B On-state resistance S: Single channel D: Dual channel Q: Quad channel A: TO252-7 B: 12-pin Power HSSOP C: 24-pin Power HSSOP Nch High-side R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 2 of 40 µPD166029T1J Datasheet 3. Specification 3. Specification 3.1 Block Diagram 3.1.1 Nch High-side Dual Device Voltage and Current Definition R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 3 of 40 µPD166029T1J Datasheet 3. Specification 3.2 Pin Configuration 3.2.1 12-pin Power HSSOP Pin Configuration Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 Tab Terminal Name GND IN1 IS1 IS2 IN2 VCC SEN OUT2 OUT2 OUT1 OUT1 VCC VCC 12 11 10 9 8 7 Tab Tab 1 2 3 4 5 6 Pin function Terminal Name GND Pin function Ground connection INn Input signal for channel n (n=1 to 2) Connected to MCU port through 2k-50K serial resistor. ISn Current sense and Diagnosis output signal channel n (n=1 to 2) Sense enable input Connected to GND through a 0.67K-5K resistor. Not connect if this pin is not used. OUTn Protected high-side power output channel n (n=1 to 2) Connected to load with small 50-100nF capacitor in parallel VCC Positive power supply for logic supply as well as output power supply Non connection Connected to battery voltage with small 100nF capacitor in parallel Left open SEN N.C. R07DS1163EJ0200 Rev.2.00 May 22, 2015 Recommended connection Connected to GND through a 100 Ω resistor or a diode for reverse current protection Refer chapter 6. Connected to MCU port through 2k-50K serial resistor. Not connect if this pin is not used. Page 4 of 40 µPD166029T1J Datasheet 3. Specification 3.3 Absolute Maximum Ratings Ta=25°C, unless other specified Parameter Vcc Voltage Vcc Voltage at reverse battery condition Symbol VCC -VCC Rating 28 -16 Unit V V GND Reverse current at reverse battery condition Vcc voltage under Load Dump condition Load Current Total power dissipation for whole device (DC) IGND(Rev) 200 mA Vload dump 42 V IL PD Self limited 1.85 A W Voltage at IN pin VIN -2 ~ 16 V -16 IN pin current Voltage at IS pin IIN VIS 10 VCC mA V -16 V IS Reverse current at reverse battery condition IIS(Rev) -30 mA Voltage at SEN pin VSEN -2 ~ 16 V -16 SEN pin current Channel Temperature Storage Temperature ESD susceptibility ISEN Tch Tstg VESD 10 -40 to +150 -55 to +150 2000 mA °C °C V 4000 200 Inductive load switch-off EAS 15 energy dissipation single pulse Inductive load switch-off EAR 13 energy dissipation repetitive pulse Remark) All voltages refer to ground pin of the device R07DS1163EJ0200 Rev.2.00 May 22, 2015 Test Condition RL=7.7Ω, t<2min, RIN=2kΩ, RSEN=2kΩ,RIS=1kΩ, RGND=100Ω RL=7.7Ω, t<2min RI=1Ω, RL=7.7Ω, RIS=1kΩ, RIN=2kΩ, RSEN=2kΩ, RGND=100Ω, td=400ms Ta=85degreeC, Device on 50mm×50mm×1.5mm epoxy PCB FR4 with 6 cm2 of 70 µm copper area DC RIN=2kΩ At reverse battery condition, t<2min, RIN=2kΩ, RSEN=2kΩ DC DC RIS=1kΩ At reverse battery condition, t<2min, RL=7.7Ω, RIS=1kΩ At reverse battery condition, t<2min, RL=7.7Ω DC RSEN=2kΩ At reverse battery condition, t<2min RIN=2kΩ, RSEN=2kΩ DC HBM AEC-Q100-002 std. R=1.5kΩ, C=100pF All pin mJ IEC61000-4-2 std. VCC, OUT R=330Ω, C=150pF, 100nF at VCC and OUT MM AEC-Q100-003 std. R=0Ω, C=200pF VCC=13.5V, Tch,start<150°C, RL=7.7Ω mJ VCC=13.5V, Tch,start=85°C, RL=7.7Ω V Page 5 of 40 µPD166029T1J Datasheet 3. Specification 3.4 Thermal Characteristics Parameter Thermal characteristics Symbol Rth(ch-a) Rth(ch-c) R07DS1163EJ0200 Rev.2.00 May 22, 2015 Min Typ 35 1.3 . Max Unit °C/W °C/W Test Condition According to JEDEC JESD51-2, -5, -7 on FR4 2s2p board All channel Page 6 of 40 µPD166029T1J Datasheet 3. Specification 3.5 Electrical Characteristics Operation function Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified Parameter Operating Voltage Symbol VCC Operating current per channel IGND Output Leakage current per channel IL(off) Min 4.5 Typ 2.2 Max 28 Unit V 4 mA VIN=4.5V RL=7.7Ω VIN=4.5V 0.5 µA Tch=25°C 3 Standby current ICC(off) 0.5 Tch=-40~125°C µA 2 On-state resistance per channel Ron Low level IN pin voltage High level IN pin voltage Low level IN pin current High level IN pin current Clamping IN pin voltage 1) Low level SEN pin voltage High level SEN pin voltage Low level SEN pin current High level SEN pin current Clamping SEN pin voltage1) Under voltage shutdown Under voltage restart Turn on time Turn on delay time Turn off time Turn off delay time Slew rate on Slew rate off Switching drift1) VIL VIH IIL IIH VZIN VSENL VSENH ISENL ISENH VZSEN VCC(Uv) VCC(Cpr) ton td(on) toff td(off) dV/dton -dV/dtoff ton-toff Turn on energy loss 1) Turn off energy loss 1) Driving capability 1) Eon Eoff Dr(capa) 70 2.5 2 2 5 25 25 6 0.8 2.5 2 2 5 25 25 6 4.5 5.0 200 100 200 150 1.5 1.5 +50 -50 0.1 0.1 450 550 0.2 0.2 Tch=25°C Tch=-40~85°C mΩ 180 0.8 Test Condition V V µA µA V V V µA µA V V V µs µs µs µs V/µs V/µs µs mJ mJ mΩ VCC=13.5V, VIN=0V, VSEN=0V, VIS=0V, VOUT=0V, VGND=0V VCC=13.5V, VIN=0V, VSEN=0V, VIS=0V, VOUT=0V, VGND=0V Tch=25°C, IL=1.8A Tch=150°C, IL=1.8A VIN=0.8V VIN=2.5V VSEN=0.8V VSEN=2.5V VCC=13.5V, RL=7.7Ω Vcc = 9 to 18V drift from Vcc=13.5V, Tch=-40 to 150°C drift from Tch=25°C ton; Vout=Vcc-1.5V after input signal active VCC=13.5V,Tch=25°C, RL=7.7Ω Tch=25°C, VCC=8~16V Tch=105°C, VCC=8~16V Remark) All voltages refer to ground pin of the device 1) not subjected production test, guaranteed by design R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 7 of 40 µPD166029T1J Datasheet 3. Specification Protection function Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified Parameter Over current detection current Current limitation under power limitation toggling Current limitation under absolute thermal toggling Current limitation trigger threshold during turn-on Current limitation trigger threshold during on-state Absolute thermal shutdown temperature Thermal hysteresis for absolute thermal toggling Power limitation thermal shutdown temperature Power limitation restart temperature Output clamp at inductive load switch off Output current while GND disconnection Output voltage drop at reverse battery condition Symbol IL(SC) Min 13 Typ 22 Max Unit A Test Condition VCC=13.5V, Von=8V, Tch=25°C IL(CL) 11 A VCC=13.5V IL(TT) 5 A VCC=13.5V Von(CL1) 2.0 V VCC=13.5V Von(CL2) 0.8 V VCC=13.5V aTth 150 °C aTth,hys 20 °C dTth 60 °C dTth,rest art Von,clam p IL(GND) 30 °C 30 Vds(rev) 40 V 1 mA 0.9 V 0.7 VCC=13.5V, IL=40mA, Tch=25°C IIN=0A, ISEN=0A, IGND=0A, IIS=0A Tch=25°C Tch=150°C VCC=-13.5V, RL=7.7Ω Remark) All voltages refer to ground pin of the device R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 8 of 40 µPD166029T1J Datasheet 3. Specification Diagnosis function Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified Parameter Current sense ratio Symbol KILIS Current sense drift depend on temperature dKILIS Sense current offset current Min 1120 980 -15 Typ 1400 1400 Max 1680 1820 15 Unit Iis,offset 2 µA VCC=13.5V, Tch,start=25°C, RL=7.7Ω IL<10mA Sense current leakage current Iis,dis 1 µA VIN=0V, VSEN=0V Sense current under fault condition Iis,fault 3 3.5 3.5 9.5 9 5.5 mA VCC=13.5V, RIS=0.67kΩ VCC=13.5V, RIS=1kΩ VCC=13.5V, RIS=2kΩ Minimum output current for current sense output IL(CSE) 10 45 mA IIS>5µA Open load detection threshold at off-state VOUT(OL) 2.0 5.0 V VIN=0V, Tch=-40~105°C OUT terminal current at Open load condition IOUT(OL) -1.0 µA VIN =0V Open load detection delay after input negative slope tdop µs VIN=4.5V to 0V, VOUT>VOUT(OL) 300 Test Condition IL=1.0A IL=0.2A % Remark) All voltages refer to ground pin of the device R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 9 of 40 µPD166029T1J Datasheet 3. Specification Diagnosis function Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified Parameter Sense current settling time after input signal positive slope Symbol tsis(on) Min Typ Max 250 Unit µs Test Condition VCC=13.5V, VIN=0V to 4.5V, IL/IIS=KILIS, RL=7.7Ω Sense current settling time after input signal negative slope 1) tsis(off) 10 µs VIN=4.5V to 0V Sense current settling time after sense enable during on-state 1) tssen(on) 20 µs VSEN=0V to 4.5V, RL=7.7Ω Sense current settling time after sense disable during on-state 1) tssen(off) 20 µs VSEN=4.5V to 0V, RL=7.7Ω Sense current settling time during on-state 1) tsis(LC) 20 µs RL=7.7Ω to 3.85Ω Fault signal delay after over current detection 1) tdsc(fault) 10 µs VIN=0V to 4.5V, IL=IL(SC) Fault signal delay after power limitation valid 1) tdpl(fault) 10 µs Von>Von(CL1) Fault signal delay after power limitation invalid 1) tdpl(off) 30 µs Von<Von(CL1) Fault signal delay after absolute thermal shutdown tdot(fault) 10 µs IIS→IIS,fault Fault signal delay after open load detection at offstate 1) tdop(fault) 10 µs VIN=0V, VOUT>VOUT(OL) Fault signal delay after input negative slope 1) tdoff(fault) 10 µs VIN=4.5V to 0V 1) Remark) All voltages refer to ground pin of the device 1) not subjected production test, guaranteed by design R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 10 of 40 µPD166029T1J Datasheet 3. Specification 3.6 Feature Description 3.6.1 Driving Circuit The high-side output is turned on, if the input pin is over VIH. The high-side output is turned off, if the input pin is open or the input pin is below VIL. Threshold is designed between VIH min and VIL max with hysteresis. IN terminal is pulled down with constant current source. VIN IN 0 RESD VOUT IIN Vcc Internal ground OFF ON OFF ON 0 t Switching a resistive load GND Switching lamps VIN VIN 0 0 IL IL 0 0 VOUT VOUT Vcc 0 0 IIS IIS 0 R07DS1163EJ0200 Rev.2.00 May 22, 2015 t 0 t Page 11 of 40 µPD166029T1J Datasheet 3. Specification Switching an inductive load VIN 0 IL 0 VOUT Vcc 0 Von,clamp IIS 0 t The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off, the voltage of OUT falls below 0V. The gate voltage of SW1 is then nearly equal to GND. Next, the voltage at the source of SW1 (= gate of output MOS) falls below the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit. When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND. SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is not activated. VCC RESD IN SEN ZDAZ ZDAZ RESD SW1 logic ZDESD OUT Internal ground GND R07DS1163EJ0200 Rev.2.00 May 22, 2015 IS Page 12 of 40 µPD166029T1J Datasheet 3. Specification 3.6.2 Device behavior at over voltage condition In case of supply voltage greater than Vload dump, logic part is clamped by ZDAZ (35V min). And current through of logic part is limited by external ground resistor. In addition, the power transistor switches off in order to protect the load from over voltage. Permanent supply voltage than Vload dump must not be applied to VCC. VCC IN RIN SEN RESD RESD N-ch MOSFET logic RSEN ZDAZ ZDESD ZDAZ ZDESD uC OUT IPD Internal ground GND IS RGND RIS RL 3.6.3 Device behavior at low voltage condition If the voltage supply (VCC) goes down under VCC(Uv), the device outputs shuts down. If voltage supply (VCC) increase over VCC(Cpr), the device outputs turns back on automatically. The device keeps off state after under voltage shutdown. The IS output is cleared during off-state. VIN 0 IL 0 VCC VOUT VCC(Uv) VCC(CPr) 0 t 3.6.4 Loss of Ground protection In case of complete loss of the device ground connection, but connected load ground, the device securely changes to off if VIN was initially greater than VIH state or keeps off state if VIN was initially lower than VIL state. In case of device loss of ground, IN and SEN terminal will/ could/ might be at VCC voltage. R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 13 of 40 µPD166029T1J Datasheet 3. Specification 3.6.5 Short circuit protection Turn-on in an over load condition including short circuit condition The device shuts down automatically when condition (a) is detected. The sense pin output Iis,fault. Shutdown is latched until the next reset via input pin. The device shuts down automatically when condition (b) is detected. The device restarts automatically when device cooling to dTch,restart. The output current is limited by output power MOSFET saturation current. The device shuts down automatically when condition (c) is detected and restarts automatically in absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode. In case of device shutdown by (c) detection but also (b) condition, the output current is limited by IL(CL). (a) IL > IL(SC) (b) deltaTch > dTth (c) Tch > aTth Over load condition including short circuit condition during on-state The device runs automatically into power limitation mode when condition (a) is detected once after Von < Von(CL2). The device shuts down automatically when condition (b) is detected. The device restarts automatically in power limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode. (a) Von > Von(CL2) (b) deltaTch > dTth (c) Tch > aTth Power limitation control Current limitation control with IL(CL) when auto restart from deltaTch protection. During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from delta Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as current limitation with IL(CL). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling operation with power limitation mode. Absolute thermal toggling Current limitation control with IL(TT) when auto restart from absolute Tch protection. During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from absolute Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as current limitation with IL(TT). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling operation with thermal toggling mode. delta Tch Junction temperature differences between thermal sensor of power area and thermal sensor of control area. R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 14 of 40 µPD166029T1J Datasheet 3. Specification 3.6.6 Device behavior at reverse current conduction during on-state During on-state(VIN>VIH) the device might shut down automatically when Vout>Vcc+0.3V is detected. And the sense pin outputs Iis,fault if the device shuts down. If restart is required, please reset via input pin when detect the Iis.fault. VCC VCC IN >VIH OUT SEN VIN Irev IS GND >VSENH RIS VIS Vout VSEN VIN 0 VSEN 0 Vcc Vout 0 Iout 0 Irev VIS 0 R07DS1163EJ0200 Rev.2.00 May 22, 2015 Iis.fault t Page 15 of 40 µPD166029T1J Datasheet 3. Specification State transition diagram Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal No Yes Yes Current limitation No Thermal IL(lim)=IL(TT) Input Return B Von < Von(CL2) No Yes A dTch > dTth Thermal No Yes IL(lim)=IL(CL) IL > IL(lim) Yes Shutdown No Input IL(lim)=IL(TT) Over current C No Yes IN = Low No IL(lim)=IL(CL) Yes Input IL > IL(NL) Yes IN = Low Yes C Return Input Von=Von(NL) No Shutting down No Yes No Turn-on C Turn-off B Return IL(lim) initial value is power MOSFET saturation current. R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 16 of 40 µPD166029T1J Datasheet 3. Specification Turn-on in an over load condition including short circuit condition (a) IL > IL(SC) Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal No Yes Yes Current limitation No Thermal IL(lim)=IL(TT) Input Return B Von < Von(CL2) No Yes A dTch > dTth Thermal No Yes IL(lim)=IL(CL) IL > IL(lim) Yes Shutdown No Input IL(lim)=IL(TT) Over current C No Yes IN = Low No IL(lim)=IL(CL) Yes Input IL > IL(NL) Yes IN = Low Yes C Return Input Von=Von(NL) No Shutting down No Yes No Before over current detection C Turn-off R07DS1163EJ0200 Rev.2.00 May 22, 2015 Turn-on After over current detection Exit from off-latch B Return Page 17 of 40 µPD166029T1J Datasheet 3. Specification Turn-on in an over load condition including short circuit condition (b) deltaTch > dTth Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal No Yes Yes Current limitation No Thermal IL(lim)=IL(TT) Input Return B Von < Von(CL2) No Yes A dTch > dTth Thermal No Yes IL(lim)=IL(CL) IL > IL(lim) Yes Shutdown No Input IL(lim)=IL(TT) Over current C No Yes IN = Low No IL(lim)=IL(CL) Yes Input IL > IL(NL) Yes IN = Low Yes C Return Input Von=Von(NL) No Shutting down No Yes No Before dTcht detection C Turn-off Turn-on During shutdowning by dTth detection During current limit by saturation current B Return Exit from current limitation control R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 18 of 40 µPD166029T1J Datasheet 3. Specification Turn-on in an over load condition including short circuit condition (c) Tch > aTth Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal No Yes Yes Current limitation No Thermal IL(lim)=IL(TT) Input Return B Von < Von(CL2) No Yes A dTch > dTth Thermal No Yes IL(lim)=IL(CL) IL > IL(lim) Yes Shutdown No Input IL(lim)=IL(TT) Over current C No Yes IN = Low No IL(lim)=IL(CL) Yes Input IL > IL(NL) Yes IN = Low Yes C Return Input Von=Von(NL) No Shutting down No Yes No Before aTcht detection C Turn-off Turn-on During shutdowning by aTth detection During current limitation control B Return Exit from power limitation control R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 19 of 40 µPD166029T1J Datasheet 3. Specification An over load condition which is include a short circuit condition during on-state (a) Von > Von(CL) with weak short condition Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal No Yes Yes Current limitation No Thermal IL(lim)=IL(TT) Input Return B Von < Von(CL2) No Yes A dTch > dTth Thermal No Yes IL(lim)=IL(CL) IL > IL(lim) Yes Shutdown No Input IL(lim)=IL(TT) Over current C No Yes IN = Low No IL(lim)=IL(CL) Yes Input IL > IL(NL) Yes IN = Low Yes C Return Input Von=Von(NL) No Shutting down No Yes No Before Von(CL) detection after turn on C Turn-off Turn-on After Von(CL) detection During shutdowning by dTth detection B Return During current limitation control Exit from power limitation control R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 20 of 40 µPD166029T1J Datasheet 3. Specification An over load condition including short circuit condition during on-state (a) Von > Von(CL) with dead condition Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal No Yes Yes Current limitation No Thermal IL(lim)=IL(TT) Input Return B Von < Von(CL2) No Yes A dTch > dTth Thermal No Yes IL(lim)=IL(CL) IL > IL(lim) Yes Shutdown No Input IL(lim)=IL(TT) Over current C No Yes IN = Low No IL(lim)=IL(CL) Yes Input IL > IL(NL) Yes IN = Low Yes C Return Input Von=Von(NL) No Shutting down No Yes No Before Von(CL) detection after turn on C Turn-off Turn-on After Von(CL) detection After over current detection B Return Exit from power limitation control R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 21 of 40 µPD166029T1J Datasheet 3. Specification An over load condition including short circuit condition during on-state (b) deltaTch > dTth Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal No Yes Yes Current limitation No Thermal IL(lim)=IL(TT) Input Return B Von < Von(CL2) No Yes A dTch > dTth Thermal No Yes IL(lim)=IL(CL) IL > IL(lim) Yes Shutdown No Input IL(lim)=IL(TT) Over current C No Yes IN = Low No IL(lim)=IL(CL) Yes Input IL > IL(NL) Yes IN = Low Yes C Return Input Von=Von(NL) No Shutting down No Yes No Turn-on C Turn-off Before dTth detection after turn on During shutdowning by dTth detection B Return Exit from thermal protection control R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 22 of 40 µPD166029T1J Datasheet 3. Specification An over load condition including short circuit condition during on-state (c) Tch > aTth Over current Turn-on Thermal IN -> High Input A IL > IL(SC) Thermal No Yes Tch > Tth Shutdown by latch Von < Von(CL1) Over current No Shutdown Yes IN = Low C Thermal No Yes Yes Current limitation No Thermal IL(lim)=IL(TT) Input Return B Von < Von(CL2) No Yes A dTch > dTth Thermal No Yes IL(lim)=IL(CL) IL > IL(lim) Yes Shutdown No Input IL(lim)=IL(TT) Over current C No Yes IN = Low No IL(lim)=IL(CL) Yes Input IL > IL(NL) Yes IN = Low Yes C Return Input Von=Von(NL) No Shutting down No Yes No Before aTth detection after turn on C Turn-off R07DS1163EJ0200 Rev.2.00 May 22, 2015 Turn-on During shutdowning by aTth detection Exit from thermal protection control B Return Page 23 of 40 µPD166029T1J Datasheet 3. Specification 3.6.7 Device behavior at small load current conduction The device has a function which controls Ron in order to improve KILIS accuracy at small load current conduction. Von (VCC-OUT) is proportionate to IL under normal conditions. Under IL<IL(NL) condition, Ron is controlled to increase to be Von=Von(NL)=30mV(typ). Von Von(NL) IL(NL) R07DS1163EJ0200 Rev.2.00 May 22, 2015 IL Page 24 of 40 µPD166029T1J Datasheet 3. Specification 3.6.8 Diagnostic signal Truth table SEN Normal Operation H Shutdown by over current detection Input H L H L H Power limitation L H Thermal toggling Short circuit to VCC Open Load X 8) L L H L H L X 8) Output VCC L 1) L 1) L 1) VOUT 6) L 1) L 1) VOUT 6) L 1) L 1) VCC VOUT 7) VCC VOUT 7) X 8) Diagnostic output 2) IIS = IL/KILIS < 1µA (Iis,dis) Iis,fault 3) < 1µA (Iis,dis) IIS = IL/KILIS in case of Von<Von(CL1) Iis,fault 4) in case of Von>Von(CL1) Iis,fault 4) < 1µA (Iis,dis) IIS = IL/KILIS in case of Von<Von(CL1) Iis,fault 5) in case of Von>Von(CL1) Iis, fault 5) < 1µA (Iis,dis) < 2µA (Iis,offset) Iis,fault in case of VOUT>VOUT(OL) < 2µA (Iis,offset) Iis,fault in case of VOUT>VOUT(OL) < 1µA (Iis,dis) 1) In case of OUT terminal is connected to GND via load. 2) In case of IS terminal is connected to GND via resister. 3) IS terminal keeps Iis,fault as long as input signal activate after the over current detection. 4) IS terminal keeps Iis,fault during power limitation if Von>Von(CL1). 5) IS terminal keeps Iis,fault during thermal toggling if Von>Von(CL1).. 6) VOUT depends on the short circuit condition 7) VOUT depends on the ratio of VCC-OUT-GND resistive component. 8) Don’t care R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 25 of 40 µPD166029T1J Datasheet 3. Specification Current sense output The device output analog feedback current proportional to output current from IS pin. In the case of much higher current than nominal load current, current sense output is saturated. In the case of much lower current than nominal load current, current sense output is above 5µA if output current is above IL(CSE) max, current sense output is below 2µA, IIS,offset max, if output current is below IL(CSE) min. IIS IIS KILIS=IL/IIS 5µA 2µA IL IIS,offset IL IL(CSE) Sense current under fault condition The device output IIS,fault, constant current, from IS pin under fault condition such as after over current detection, during power limitation and during thermal toggling. IIS,fault is specified with RIS=1kΩ condition. IIS,fault is attenuated depends on VCC-VIS voltage. Operation point as IIS,fault output is also depends on RIS condition. For example, In the case of RIS=1kΩ, IIS,fault could be 3.5mA to 9mA, VCC-VIS could be 4.5V to 10V, VIS could be 9V to 3.5V if VCC=13.5V. In the case of RIS is higher than 1kΩ, Operation point as IIS,fault is lower than specified value but VIS should be higher than RIS=1kΩ condition. IIS,fault 1kΩ load line VCC 9mA VCC-VIS VCC IS 3.5mA GND VIS VCC-VIS VIS RIS VCC-VIS VCC R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 26 of 40 µPD166029T1J Datasheet 3. Specification Sense current settling time VIN VSEN VOUT tsis(on) tssen(off) tssen(on) tsis(LC) tsis(LC) tsis(off) IIS Fault signal delay time at over current detection VIN VSEN Over current detection VOUT Iis,fault IIS tdsc(fault) R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 27 of 40 µPD166029T1J Datasheet 3. Specification Fault signal delay time at power limitation VIN VSEN Short circuit appear Short circuit disappear Power limitation VOUT tdpl(fault) IIS tdpl(off) Iis,fault Fault signal delay time at Thermal toggling VIN VSEN Short circuit appear Power limitation VOUT Short circuit disappear Thermal toggling tdpl(fault) tdpl(off) Iis,fault IIS tsis(off) R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 28 of 40 µPD166029T1J Datasheet 3. Specification Fault signal delay time at open load detection VIN VSEN Open load condition appear Open load detection Open load detection VOUT Iis,fault tdop IIS Iis,offset R07DS1163EJ0200 Rev.2.00 May 22, 2015 tdop(fault) Iis,dis Page 29 of 40 µPD166029T1J Datasheet 3. Specification 3.6.9 Nominal load Product Nominal load 7.7Ω NHD070B 3.6.10 Driving Capability Driving Capability is specified as load impedance. Over current detection characteristics is designed above Driving Capability characteristics. If estimated load impedance which comes from peak inrush current is lower than Driving Capability characteristics, this means, the device does not detect inrush current as over current and does not shutdown the output. Depend on the conditions, Power Limitation function may work during inrush current. If estimated load impedance which comes from peak inrush current is lower than Driving Capability characteristics, Power limitation disappear within 30ms. This parameter does not mean that the device can drive the resistive load up to Driving Capability characteristics. IL [A] VIN IL(SC) characteristics t 30 IL(SC) specified point NHD070B: 13A 8 Driving Capability: 13.5 IL Von [V] t 30ms NHD070B:450mohm R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 30 of 40 µPD166029T1J Datasheet 3. Specification 3.6.11 Measurement condition Switching waveform of OUT terminal VIN ton toff td(on) td(off) 90% 70% VOUT dV/dton 30% 10% R07DS1163EJ0200 Rev.2.00 May 22, 2015 90% 70% -dV/dtoff 30% 10% Page 31 of 40 µPD166029T1J Datasheet 3. Specification 3.7 Package drawing 12-pin Power HSSOP R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 32 of 40 µPD166029T1J Datasheet 3. Specification 3.8 Taping information 3.9 Marking information R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 33 of 40 µPD166029T1J Datasheet 4. Typical characteristics 4. Typical characteristics R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 34 of 40 µPD166029T1J Datasheet 4. Typical characteristics R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 35 of 40 µPD166029T1J Datasheet 4. Typical characteristics R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 36 of 40 µPD166029T1J Datasheet 4. Typical characteristics R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 37 of 40 µPD166029T1J Datasheet 4. Typical characteristics R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 38 of 40 µPD166029T1J Datasheet 5. Thermal characteristics 5. Thermal characteristics R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 39 of 40 µPD166029T1J Datasheet 6. Application example in principle 6. Application example in principle RIN, RSEN, RAN values are in range of 2k to 50kΩ depending microcontroller while R_L value is typically 4kΩ. If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s value is typically 100kΩ GND Network recommendation In case of V_loaddump < 35V In case of 35V < V_loaddump < 42V Vbat Vbat VCC VCC GND GND RGND External diode is recommended in order to prevent reverse current toward control logic part at reverse battery condition. External diode and resistor are recommended in order to prevent reverse current toward control logic part at reverse battery condition and limit the current through ZDAZ at load dump condition. 100Ω is recommended as RGND. Note: If other component is installed to prevent reverse current at reverse battery condition, diode is not required in GND Network. Note: Approx. 1kΩ additional resistor in parallel with the diode is recommended if Vf vaule of the diode is high. R07DS1163EJ0200 Rev.2.00 May 22, 2015 Page 40 of 40 Revision History Rev. 1.00 2.00 Date Mar 27, 2014 May 22, 2015 µPD166029T1J Datasheet Page 1-38 15 24 Description Summary 1st issue "Device behavior at reverse current conduction during on-state" is added. "Device behavior at small load current conduction" is added. All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. 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