XPTTM 600V IGBTs GenX3TM IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 VCES = 600V IC110 = 50A VCE(sat) 1.80V TO-263 (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220 (IXXP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 120 50 200 A A A IA EAS TC = 25°C TC = 25°C 25 200 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 100 @VCE VCES A C tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 22, Non Repetitive 10 μs G = Gate E = Emitter PC TC = 25°C 600 W Features -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb. Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G G BVCES IC = 250A, VGE = 0V 600 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 36A, VGE = 15V, Note 1 TJ = 150C © 2013 IXYS CORPORATION, All Rights Reserved V 25 A 2 mA TJ = 150C 100 1.55 1.80 1.80 C (Tab) C = Collector Tab = Collector Optimized for 5-30kHz Switching Square RBSOA Avalanche Capability Short Circuit Capability International Standard Packages High Power Density 175°C Rated Extremely Rugged Low Gate Drive Requirement Easy to Parallel Applications V 6.0 E Advantages Characteristic Values Min. Typ. Max. C (Tab) TO-247 (IXXH) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) CE nA V V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100301C(8/13) IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 12 IC = 36A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 36A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 36A, VGE = 15V VCE = 360V, RG = 5 Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 150°C IC = 36A, VGE = 15V VCE = 360V, RG = 5 Note 2 RthJC RthCS Notes: TO-247 TO-220 TO-220 Outline 19 S 2230 195 44 pF pF pF 70 16 29 nC nC nC 27 40 0.67 100 135 0.74 ns ns mJ ns ns mJ 150 1.20 30 45 1.40 130 190 1.20 ns ns mJ ns ns mJ 0.21 0.50 0.25 °C/W °C/W °C/W Pins: 1 - Gate 2 - Collector 3 - Emitter TO-247 Outline 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 1 - Gate 2,4 - Collector 3 - Emitter TO-263 Outline 1 = Gate 2,4 = Collector 3 = Emitter IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 200 VGE = 15V 14V 13V 70 160 12V 14V 140 50 IC - Amperes IC - Amperes 60 VGE = 15V 180 11V 40 30 10V 120 13V 100 12V 80 60 20 9V 10 8V 7V 0 11V 40 10V 9V 20 7V 0 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 2.0 VGE = 15V 14V 13V IC - Amperes 60 VGE = 15V 1.8 12V 50 VCE(sat) - Normalized 70 11V 40 10V 30 20 9V 10 8V 0 7V 6V 0 0.5 1 1.5 2 2.5 3 1.2 C = 36A I C = 18A 0.6 -50 -25 0 25 50 75 100 125 150 175 11 12 13 TJ - Degrees Centigrade Fig. 6. Input Admittance 100 90 TJ = 25ºC 5.5 5.0 80 4.5 70 I C IC - Amperes VCE - Volts I 1.0 3.5 6.0 = 72A 36A 18A 3.0 = 72A 0.8 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 3.5 C 1.4 VCE - Volts 4.0 I 1.6 60 50 40 2.5 30 2.0 20 1.5 10 TJ = 150ºC 25ºC - 40ºC 0 1.0 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 9 VGE - Volts 10 IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 Fig. 8. Gate Charge Fig. 7. Transconductance 32 16 14 24 12 20 10 VGE - Volts g f s - Siemens TJ = - 40ºC, 25ºC, 150ºC 28 16 12 I C = 36A I G = 10mA 8 6 8 4 4 2 0 VCE = 300V 0 0 10 20 30 40 50 60 70 80 90 0 10 IC - Amperes 30 40 50 60 70 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 110 10,000 f = 1 MHz 100 Cies 90 80 1,000 IC - Amperes Capacitance - PicoFarads 20 Coes 100 70 60 50 40 30 TJ = 150ºC 20 Cres 10 0 100 10 0 5 10 15 20 25 RG = 5Ω dv / dt < 10V / ns 30 35 40 VCE - Volts 500 600 Fig. 11.200 Maximum300 Transient400 Thermal Impedance VCE - Volts 1 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 0.4 1,000 aaaasss VCE(sat) Limit 25µs 10 100µs 1 Z(th)JC - ºC / W ID - Amperes 100 1ms TJ = 175ºC TC = 25ºC Single Pulse 10ms DC 0 1 0.1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 3.0 Eoff 1.8 --- 1.6 5 VCE = 360V ---TJ = 150ºC 4 VCE = 360V 1.5 3 C = 36A 3 1.2 1.0 0.8 2 TJ = 25ºC 0.6 0.4 2 Eon - MilliJoules 4 E on - MilliJoules 2.0 1.0 5 1.4 I C = 72A I Eon RG = 5ΩVGE = 15V E off - MilliJoules Eon - TJ = 150ºC , VGE = 15V 2.5 Eoff - MilliJoules 2.0 6 Eoff Fig. 14. Inductive Switching Energy Loss vs. Collector Current 1 0.2 0.5 0.0 1 5 10 15 20 25 30 35 40 45 0 15 50 20 25 30 35 40 RG - Ohms Eoff 2.0 Eon 4.5 ---- 220 1.2 2.0 1.0 1.5 I C = 36A 0.8 1.0 0.6 0.5 0.4 100 t f i - Nanoseconds E off - MilliJoules 2.5 300 TJ = 150ºC, VGE = 15V 200 250 I C = 36A 180 160 150 I C = 72A 140 100 120 50 0 5 10 15 20 25 td(off) - - - - RG = 5Ω, VGE = 15V 200 220 180 200 160 180 140 150 120 TJ = 25ºC 80 40 60 60 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 65 70 75 I C = 36A 110 80 60 55 120 90 60 50 130 VCE = 360V 120 100 45 140 100 80 40 td(off) - - - - 140 90 30 tfi 160 100 35 50 150 180 120 30 45 RG = 5Ω, VGE = 15V t d(off) - Nanoseconds t f i - Nanoseconds 240 210 25 40 I C = 72A 25 70 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds VCE = 360V 220 t f i - Nanoseconds tfi 20 35 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 300 15 30 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 240 200 100 0.0 150 125 td(off) - - - - TJ - Degrees Centigrade TJ = 150ºC 75 t d(off) - Nanoseconds 1.4 E on - MilliJoules 3.0 270 70 VCE = 360V I C = 72A 1.6 75 65 350 tfi 3.5 50 60 240 4.0 VCE = 360V 25 55 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance RG = 5ΩVGE = 15V 1.8 50 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 2.2 45 IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 240 tri 200 120 160 td(on) - - - - 60 I C = 72A 80 40 40 20 0 10 15 20 25 30 35 40 45 tri 32 TJ = 150ºC 60 29 40 26 TJ = 25ºC 23 20 15 20 25 30 35 40 45 50 55 60 65 70 75 44 41 VCE = 360V 38 120 35 I C = 72A 100 32 80 29 60 80 26 I C = 36A 40 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 5Ω, VGE = 15V 140 35 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 160 100 0 50 RG - Ohms 180 38 20 0 5 41 VCE = 360V 120 t r i - Nanoseconds t r i - Nanoseconds 120 td(on) - - - - t d(on) - Nanoseconds I C = 36A t d(on) - Nanoseconds 80 44 RG = 5Ω, VGE = 15V VCE = 360V 160 tri 140 100 TJ = 150ºC, VGE = 15V Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 23 20 25 50 75 100 125 20 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_50N60B3D1(5D)8-13-13-A