Spec. No. : C033Q8 Issued Date : 2018.03.07 Revised Date : Page No. : 1/9 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB050N15BRQ8 Features • Simple drive requirement • Low on-resistance • Fast switching characteristic • Pb-free & halogen-free package Symbol BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=4.5A RDS(ON)@VGS=4.5V, ID=3.3A 150V 4.9A 46.5 mΩ(typ) 52 mΩ(typ) Outline MTB050N15BRQ8 D D SOP-8 D D G G：Gate D：Drain S：Source Pin 1 S S S Ordering Information Device MTB050N15BRQ8-0-T3-G Package SOP-8 (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB050N15BRQ8 CYStek Product Specification Spec. No. : C033Q8 Issued Date : 2018.03.07 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=1mH, ID=16A, VDD=25V Repetitive Avalanche Energy @ L=0.05mH TA=25 °C Total Power Dissipation TA=70 °C Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg Limits Unit 150 ±20 6.2 3.9 4.9 3.9 20 *1 32 128 *3 1.6 *2 3.1 2.0 -55~+150 V A mJ W °C *2. Duty cycle ≤ 1% *3. 100% tested by conditions of L=0.1mH, IAS=4.5A, VGS=10V, VDD=25V Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient (Note) Symbol RθJC RθJA Value 25 40 Unit °C/W Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 Ciss Coss Crss MTB050N15BRQ8 Min. Typ. Max. 150 1 - 12.6 46.5 52 2.5 ±100 1 10 62 72 - 24.5 3.9 4.7 1376 65 12 37 2064 98 24 Unit V S nA μA mΩ Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=5A VGS=±20V, VDS=0V VDS =120V, VGS =0V VDS =120V, VGS =0V, Tj=85°C VGS =10V, ID=4.5A VGS =4.5V, ID=3.3A nC VDS=75V, ID=2A, VGS=10V pF VDS=75V, VGS=0V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Spec. No. : C033Q8 Issued Date : 2018.03.07 Revised Date : Page No. : 3/9 Characteristics (Cont. TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Dynamic td(ON) *1, 2 12.6 18.9 tr 17 25.5 *1, 2 ns td(OFF) *1, 2 41 61.5 tf *1, 2 8.2 12.3 Ω Rg 1 Source-Drain Diode Ratings and Characteristics IS *1 4.2 A ISM *3 20 VSD *1 0.77 1.2 V trr 37.8 ns Qrr 58.8 nC Test Conditions VDS=75V, ID=1A, VGS=10V, RG=3Ω f=1MHz IS=2.3A, VGS=0V IF=2.3A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTB050N15BRQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C033Q8 Issued Date : 2018.03.07 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V,9V,8V,7V,6V,5V,4V,3.5V 16 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage 20 12 VGS=3V 8 4 1.2 1 0.8 ID=250μA, VGS=0V 0.6 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 100 VGS=4.5V VGS=10V 1.0 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 3.2 R DS(ON) , Normalized Static DrainSource On-State Resistance 150 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 120 ID=4.5A 90 60 ID=3.3A 30 2.8 VGS=10V, ID=4.5A RDS(ON) @Tj=25°C : 46.5mΩ typ. 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 0 MTB050N15BRQ8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C033Q8 Issued Date : 2018.03.07 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 10 Crss f=1MHz 1 0 10 20 30 40 50 60 VDS, Drain-Source Voltage(V) 70 1.2 ID=1mA 1.0 0.8 0.6 ID=250μA 0.4 -75 -50 -25 80 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=10V 10 VDS=15V 1 0.1 Pulsed Ta=25°C VDS=30V, 75V, 120V from left to right 8 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 6 4 2 ID=4.5A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 10 0 100 5 10 15 20 Qg, Total Gate Charge(nC) 25 30 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 5 RDS(ON) Limited 10 100μs 1 1ms 10ms TA=25°C, Tj=150°C VGS=10V,RθJA=40°C/W Single Pulse 0.1 100ms 1s DC MTB050N15BRQ8 0.1 1 10 100 VDS, Drain-Source Voltage(V) 4 3 2 1 TA=25°C,RθJA=40°C/W,VGS=10V 0 0.01 0.01 ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C033Q8 Issued Date : 2018.03.07 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics 20 300 Single Pulse Power Rating, Junction to Ambient (Note on page 2) TJ(MAX) =150°C TA=25°C RθJA=40°C/W 250 16 Power (W) ID, Drain Current (A) VDS=5V 12 8 200 150 100 4 50 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 6 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 10 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTB050N15BRQ8 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C033Q8 Issued Date : 2018.03.07 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB050N15BRQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C033Q8 Issued Date : 2018.03.07 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools. MTB050N15BRQ8 CYStek Product Specification Spec. No. : C033Q8 Issued Date : 2018.03.07 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name B050N 15BR Date Code 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.35 1.75 0.10 0.25 0.38 0.51 0.19 0.25 4.80 5.00 3.80 4.00 DIM A A(1) B C D E Inches Min. Max. 0.053 0.069 0.004 0.010 0.015 0.020 0.007 0.010 0.189 0.197 0.150 0.157 DIM e H L α h Millimeters Min. Max. 1.270 (BSC) 5.80 6.20 0.50 0.93 8° 0 0.25 0.50 Inches Min. Max. 0.050 (BSC) 0.228 0.244 0.020 0.037 8° 0 0.010 0.020 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB050N15BRQ8 CYStek Product Specification